CN101335253B - 半导体封装体以及使用半导体封装体的半导体器件 - Google Patents

半导体封装体以及使用半导体封装体的半导体器件 Download PDF

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CN101335253B
CN101335253B CN2008101261361A CN200810126136A CN101335253B CN 101335253 B CN101335253 B CN 101335253B CN 2008101261361 A CN2008101261361 A CN 2008101261361A CN 200810126136 A CN200810126136 A CN 200810126136A CN 101335253 B CN101335253 B CN 101335253B
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pad
package body
semiconductor package
terminal pad
frame
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CN101335253A (zh
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玉馆由香
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Shinko Electric Industries Co Ltd
Shinko Electric Co Ltd
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Shinko Electric Co Ltd
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Abstract

本发明公开了一种半导体封装体(60)以及使用这种半导体封装体(60)的半导体器件(70)。在所述半导体封装体(60)中，形成有连接盘焊盘(18)的区域位于形成有倒装芯片连接焊盘(16)的区域的外侧，保护部件(39)使形成有连接盘焊盘(18)的区域内的连接盘焊盘(18)露出，并且保护部件(39)包括：框架形结构部分(39A)，其布置成包围倒装芯片连接焊盘(16)；以及支撑膜部分(39B)，其布置在框架形结构部分(39A)的外侧。

Description

半导体封装体以及使用半导体封装体的半导体器件
技术领域
本发明涉及半导体封装体以及使用这种半导体封装体的半导体器件，更具体地说，本发明涉及包括倒装芯片连接焊盘和用于球栅阵列(BGA，Ball Grid Array)连接或矩栅阵列(LGA，Land Grid Array)连接的连接盘焊盘的半导体封装体，以及使用这种半导体封装体的半导体器件。
背景技术
在用于便携电话或数字相机的半导体封装体和使用这种半导体封装体的半导体器件中，希望提高密度并且减小尺寸。在密度提高并且尺寸减小的半导体封装体和半导体器件的组装技术中，采用半导体芯片的倒装芯片连接结构作为有效措施。
在倒装芯片连接结构中，在芯片安装区域，半导体芯片与半导体封装体的基板之间的间隔非常小，也就是说，在高密度连接结构中该间隔大约为30μm。因此，使用低粘度的树脂作为底部填充树脂。
在使用低粘度的底部填充树脂的情况下，底部填充树脂或多或少地会从倒装芯片连接区域流出。通常，这对外观只有轻微的影响并且可以忽视。然而，当半导体芯片自身的尺寸减小并且半导体芯片与其它电子元件的密度提高时，存在底部填充树脂的流出会有害地影响外围芯片和电子元件的可能性。
在最近几年中，存在通过以下方式形成的层叠式半导体器件，即：在连接有半导体元件倒装芯片的半导体器件上安装另一半导体器件，然后通过LGA连接使这些半导体器件相互连接。在半导体器件中，需要一种形成围堰的方法，所述围堰防止底部填充树脂经由设置成包围芯片安装区域的保护阻挡层流出，从而使底部填充树脂不会流向布置在半导体封装体的芯片安装区域外侧的用于BGA连接或LGA连接的连接盘焊盘。
[专利文献1]JP-A-2006-351559
图14是说明性视图，示出了制造包括倒装芯片连接焊盘和用于BGA连接或LGA连接的连接盘焊盘的半导体封装体的中间步骤。
形成在半导体元件10(见图12)上的凸点12(金凸点)与倒装芯片连接焊盘16结合，焊球或连接插脚与用于BGA连接或LGA连接的连接盘焊盘18连接。为此，将焊料覆盖在倒装芯片连接焊盘16中的铜焊盘表面上。此外，在用于BGA连接或LGA连接的连接盘焊盘18中也可以使用铜焊盘。然而，为了使连接盘焊盘18更合适，理想的是应当在铜焊盘表面上施加金属镀层36(例如，镍镀层和金镀层)。
在向连接盘焊盘18施加镍镀层和金镀层的情况下，在形成基板14的步骤中，在基板14的表面上形成配线图案、倒装芯片连接焊盘16和连接盘焊盘18，随后，首先将金属镀层36施加在用作连接盘焊盘18的焊盘部分上，然后将焊料52a覆盖在用作倒装芯片连接焊盘16的焊盘部分上。
更具体地说，当要将金属镀层36施加在用作连接盘焊盘18的焊盘部分18a上时，用抗镀层涂覆用作倒装芯片连接焊盘16的焊盘部分16a以便施加金属镀层36；当要将焊料粉末52涂覆在用作倒装芯片连接焊盘16的焊盘部分16a上时，把掩模带42粘在连接盘焊盘18上并因此盖住连接盘焊盘18。
连接盘焊盘18设置在包围形成有倒装芯片连接焊盘16的区域的外部区域内，由包围形成有倒装芯片连接焊盘16的区域的保护阻挡层形成围堰D。围堰D用于防止底部填充树脂37(见图12)流向形成有连接盘焊盘18的区域，并且设置成从树脂基板30或阻焊层38向上突起。如上文所述，粘贴掩模带42以遮蔽连接盘焊盘18。然而，由于形成了围堰D，所以掩模带42不能平整地粘在形成有连接盘焊盘18的区域上。因此，如图14所示，存在如下问题，即：在掩模带42与形成有连接盘焊盘18的区域之间产生间隙S。在用焊料粉末52涂覆用作倒装芯片连接焊盘16的焊盘部分16a的情况下，把粘性溶液粘在焊盘部分16a上。因此，当在这种状态下提供粘性溶液时，该粘性溶液会从形成有连接盘焊盘18的区域与掩模带42之间的间隙S流入形成有连接盘焊盘18的区域，或者焊料粉末52会粘在连接盘焊盘18上，使得不能保护连接盘焊盘18表面上的金属镀层36，从而产生有缺陷的产品。
发明内容
因此，提出了本发明来解决这些问题，并且本发明的目的是提供一种半导体封装体和一种使用该半导体封装体的半导体器件，该半导体封装体具有通过包括倒装芯片连接和BGA连接或LGA连接在内的不同连接方法获得的连接焊盘，其中可以可靠地在每个连接焊盘内进行表面处理并且生产效率高。
根据本发明的第一方面，提供了一种半导体封装体，包括：
形成有连接盘焊盘的区域；
形成有倒装芯片连接焊盘的区域，所述形成有连接盘焊盘的区域位于所述形成有倒装芯片连接焊盘的区域的外侧；以及
保护部件，其使形成有连接盘焊盘的区域内的连接盘焊盘露出，
其中，所述保护部件包括：
框架形结构部分，其布置成包围所述倒装芯片连接焊盘；以及
支撑膜部分，其布置在所述框架形结构部分的外侧。
根据本发明的第二方面，提供了根据第一方面的半导体封装体，其中，
所述支撑膜部分形成为类似从外侧包围所述框架形结构部分的框架。
根据本发明的第三方面，提供了根据第一方面的半导体封装体，其中，
所述支撑膜部分形成为类似位于所述框架形结构部分外侧的离散点。
根据本发明的第四方面，提供了根据第一至第三方面中任一方面的半导体封装体，其中，
所述支撑膜部分形成在所述连接盘焊盘的最外围位置的外侧。
通过采用这种结构，可以粘贴掩模带，并且掩模带与形成有用于实现BGA连接或LGA连接的连接盘焊盘的区域之间没有间隙。因此，可以提高半导体封装体的产出率，从而可以降低半导体封装体的制造成本。
此外，根据本发明的第五方面，提供了根据第一至第四方面中任一方面的半导体封装体，其中，
所述框架形结构部分与所述支撑膜部分的高度相同。
因此，易于平整地粘贴掩模带，并且掩模带与形成有用于实现BGA连接或LGA连接的连接盘焊盘的区域之间没有间隙。因此，可以进一步提高半导体封装体的产出率。另外，可以进一步降低半导体封装体的制造成本。
另外，根据本发明的第六方面，提供了一种半导体器件，在所述半导体器件中，将半导体元件安装在根据第一至第五方面中任一方面的半导体封装体上的，其中，
所述安装在半导体封装体上的半导体元件是通过倒装芯片连接方式来连接的。
根据本发明的第七方面，提供了一种半导体器件，其中，
在竖直方向上层叠多个根据第六方面的半导体器件，并且
上层半导体器件中的外部连接端子与下层半导体器件中的连接盘焊盘连接。
此外，可以在根据本发明的半导体封装体上层叠不同类型的半导体封装体。
根据本发明的半导体封装体和使用半导体封装体的半导体器件，即使在具有包括倒装芯片连接和BGA连接或LGA连接在内的不同连接部分的半导体封装体和使用这种半导体封装体的半导体器件中形成用于防止底部填充树脂流出的框架形结构部分，也可以可靠地在每个连接焊盘内进行表面处理。此外，通过阻焊层在形成有连接盘焊盘的区域内形成支撑膜部分。因此，可以减轻每一个半导体封装体和半导体器件的翘曲。这样，可以获得小尺寸、高质量的半导体封装体和半导体器件。
附图说明
图1是剖视图，示出了在单面覆盖铜的树脂基板上形成抗蚀图案的状态。
图2是剖视图，示出了在树脂基板上形成配线图案、并同时形成用作倒装芯片连接焊盘和连接盘焊盘的焊盘的状态。
图3是剖视图，示出了涂覆阻焊层并且在树脂基板表面上仅露出用作倒装芯片连接焊盘和连接盘焊盘的焊盘部分的状态。
图4是剖视图，示出了将镀层施加在用作连接盘焊盘的焊盘部分以形成连接盘焊盘的状态。
图5是剖视图，示出了框架形结构部分和支撑膜部分以包围布置有倒装芯片连接焊盘的区域的方式形成在连接盘焊盘的区域内的状态。
图6是剖视图，示出了形成有连接盘焊盘的区域被掩模带掩盖的状态。
图7是剖视图，示出了在倒装芯片连接焊盘表面上形成粘性层的状态。
图8是剖视图，示出了将焊料粉末粘在用作倒装芯片连接焊盘的焊盘部分上的状态。
图9是剖视图，示出了基板表面被焊剂覆盖的状态。
图10是剖视图，示出了在回流焊步骤之后通过熔化焊料粉末获得的焊料覆盖在倒装芯片连接焊盘表面上的状态。
图11A和图11B是剖视图，示出了根据本实施例的半导体封装体的结构。
图12是剖视图，示出了使用根据本实施例的半导体封装体的半导体器件的结构的实例。
图13是剖视图，示出了具有POP结构的半导体器件的结构，在POG结构中，根据本实施例的半导体器件是竖直层叠的。
图14是说明性视图，示出了制造包括倒装芯片连接焊盘和BGA或LGA连接盘焊盘的半导体封装体的中间步骤。
具体实施方式
下面将参考附图详细描述根据本发明的优选实施例。图1-图10为示出制造根据本实施例的半导体封装体的步骤的剖视图。图11包括示出根据本实施例的半导体封装体的平面图(图11A)和沿着平面图中的A-A线截取的剖视图(图11B)。图1-图10中的剖视图均为沿着图11A中的A-A线截取的。
图1是剖视图，示出了在单面覆盖铜的树脂基板上形成抗蚀图案的状态。通过以下方式形成抗蚀图案34：在粘贴在树脂基板30上的铜箔31上覆盖抗蚀膜33，然后使抗蚀膜33曝光并显影。抗蚀图案34形成为覆盖预定的配线图案(未示出)、以及用于实现BGA(球栅阵列)连接或LGA(矩栅阵列)连接的倒装芯片连接焊盘16和连接盘焊盘18的图案部分。
图2是剖视图，示出了在树脂基板上形成配线图案并同时形成用作倒装芯片连接焊盘和连接盘焊盘的焊盘的状态。在形成抗蚀图案34之后，通过使用该抗蚀图案作为掩模对铜箔进行蚀刻，从而形成配线图案、用作倒装芯片连接焊盘16的焊盘部分16a和用作连接盘焊盘18的焊盘部分18a。在蚀刻之后，将抗蚀图案34去掉。
图3是剖视图，示出了涂覆阻焊层、并且在树脂基板表面上仅露出用作倒装芯片连接焊盘和连接盘焊盘的焊盘部分的状态。将阻焊层38涂覆在树脂基板30的表面上，然后进行曝光和显影，以便从树脂基板30的表面上仅露出用作倒装芯片连接焊盘16的焊盘部分16a和用作连接盘焊盘18的焊盘部分18a。
图4是剖视图，示出了在用作连接盘焊盘的焊盘部分进行镀覆以形成连接盘焊盘的状态。在本实施例中，按顺序施加作为金属镀层36的镍镀层和金镀层。当要在用作连接盘焊盘18的焊盘部分18a上施加金属镀层时，用掩模挡住形成有焊盘部分16a的区域，从而以镀覆溶液不会粘在用作倒装芯片连接焊盘16的焊盘部分16a上的方式进行镀覆，这些在图中未示出。例如，可以使用抗镀层作为掩模。
图5是剖视图，示出了框架形结构部分和支撑膜部分以包围布置有倒装芯片连接焊盘的区域的方式形成在连接盘焊盘的区域内的状态。在布置连接盘焊盘18的区域内，在阻焊层38的上表面覆盖将要成为用作保护部件的第二层的阻焊层39，其中用于防止底部填充树脂37流出的框架形结构部分39A和与框架形结构部分39A等高的支撑膜部分39B是同时形成的。框架形结构部分39A沿着形成有焊盘部分16a区域的周边设置，而支撑膜部分39B具有与框架形结构部分39A相同的高度，并且在平面图上呈类似框架的形状，从而包围框架形结构部分39A。
如图5所示，框架形结构部分39A形成足以防止底部填充树脂37流出的高度和宽度。此外，在形成有焊盘部分18的区域内，支撑膜部分39B呈类似框架的形状，并且厚度与框架形结构部分39A的厚度相同。因此，可以抑制半导体封装体60(见图11A和图11B)和使用半导体封装体60的半导体器件70(见图12)翘曲。这样，可以提供具有高平整度的半导体封装体60和半导体器件70。
更具体地说，已经知道，在倒装芯片连接之后将半导体元件10翻转到上侧的状态下，在从正面侧观看半导体器件70时，半导体器件70发生变形并呈向上凸起的形状。因此，经过两次向半导体封装体60的基板施加阻焊层38，可以增大使半导体器件70变形并呈凸起形状的应力。这样，可以减轻在半导体器件70上产生的翘曲。
图6是剖视图，示出了形成有连接盘焊盘的区域被掩模带掩盖的状态。掩模带42用于防止在将焊料覆盖在焊盘部分16a的表面上时焊料粉末粘在连接盘焊盘18的表面上。如图6所示，框架形结构部分39A和支撑膜部分39B的表面位于连接盘焊盘18的表面的上侧。因此，掩模带42分别粘接在框架形结构部分39A和支撑膜部分39B的上表面上，从而铺设在框架形结构部分39A与支撑膜部分39B之间。
为了使掩模带42可靠地覆盖形成连接盘焊盘18的区域，优选的是在设置有最外侧连接盘焊盘18的位置更外侧的位置布置至少一个支撑膜部分39B。
在用于本实施例的掩模带42中，基材由基于聚氯乙烯的树脂形成，粘合剂由丙烯酸树脂形成。掩模带42的粘性层由如下材料形成，即：即使粘合剂残留在连接盘焊盘18中，该材料也不会妨碍BGA连接和LGA连接。然而，如图6所示，因为掩模带42在远离连接盘焊盘18的表面位置进行粘贴，所以粘合剂不会粘在连接盘焊盘18的表面上。
在使用时，实际上将掩模带42从由树脂膜形成的分离器上剥离并粘在目标上。通过将掩模带42分别粘在框架形结构部分39A和支撑膜部分39B的表面上，使连接盘焊盘18与外侧密封。
接下来，将焊料覆盖在用作倒装芯片连接焊盘的焊盘的表面上。首先，在图6所示的工件40中，在用作倒装芯片连接焊盘16的焊盘部分16a的表面上形成粘性层50。通过以下方式形成粘性层50：将工件40浸入盛有由丙烯酯化合物构成的粘合剂的溶液容器中，以便使粘合剂粘在焊盘部分16a的表面上。粘性溶液选择性地粘在由铜制成的焊盘部分16a的表面上。然而，连接盘焊盘18被掩模带42覆盖。因此，即使将工件40浸入粘合剂的溶液容器中，粘合剂溶液也不会粘在连接盘焊盘18上。图7是剖视图，示出了进行处理的状态。
接下来，将焊料粉末52粘在用作倒装芯片连接焊盘16的焊盘部分16a(在下面的一些情况中将简称为焊盘部分16a)上。图8是剖视图，示出了焊料粉末粘在用作倒装芯片连接焊盘的焊盘部分上的状态。从工件40的上面喷洒焊料粉末52，从而使焊料粉末粘在焊盘部分16a的表面上。落到焊盘部分16a上的焊料粉末52被粘性层50粘在焊盘部分16a的表面上。在清洁步骤中，去除落到基板的除焊盘部分16a以外的表面上的焊料粉末52。此外，在清洁步骤中，因为连接盘焊盘18被掩模带42覆盖，所以不会造成妨碍。在本实施例中，使用由锡-金形成的焊料粉末52。
在回流焊步骤中，使粘在焊盘部分16a表面上的焊料粉末52熔化并因此粘在焊盘部分16a表面上。在本实施例中，作为回流焊步骤的前一步骤，使焊料粉末52临时粘在焊盘部分16a上。该临时粘贴步骤用于使焊料粉末52略微熔化，并且使以这种方式熔化的焊料粉末52粘贴在焊盘部分16a上。实际上，可以在大约170℃的温度加热基板大约1小时，从而临时粘住焊料粉末52。在处理进行到临时粘贴步骤之前使掩模带42剥离。在临时粘贴步骤之后，即使连接盘焊盘18不被掩模带42所覆盖，杂质也不会粘在连接盘焊盘18的表面上。
图9是剖视图，示出了基板表面被焊剂覆盖的状态。在一些情况下，在回流焊步骤之前进行图9所示的用焊剂54覆盖树脂基板30的上表面的步骤。焊剂54用于增强通过使焊料粉末52熔化而获得的焊料52a的流动性、和焊料52a与焊盘部分16a的结合性。优选使用已知方法涂覆焊剂54。
图10是剖视图，示出了在回流焊步骤之后，通过使焊料粉末熔化而获得的焊料覆盖在倒装芯片连接焊盘表面上的状态。在覆盖焊剂54之后，处理进行到回流焊步骤，在回流焊步骤中，使焊料粉末52熔化并且将焊料52a覆盖在用作倒装芯片连接焊盘16的焊盘部分16a的表面上。在回流焊步骤之后，清洁并去除焊剂。
对于通过粘性层50将焊料粉末52粘在焊盘部分16a的表面上以及通过回流焊将焊料52a覆盖在焊盘部分16a的表面上的方法，可以采用例如JP-A-7-7244公开出版物中描述的方法。
通过按照上述方式形成包含有倒装芯片连接焊盘16和连接盘焊盘18的基板，然后将外部连接端子15连接到形成在树脂基板30的下表面上的焊盘P上，就可以获得图11A和图11B所示的半导体封装体60。在半导体封装体60中，通过将要成为用作保护部件的第二层的阻焊层39形成框架形结构部分39A和支撑膜部分39B，以便在形成有连接盘焊盘18的区域内露出连接盘焊盘18，其中所述支撑膜部分39B呈类似框架形状并在框架形结构部分39A外侧包围框架形结构部分39A，所述形成有连接盘焊盘18的区域位于形成有倒装芯片连接焊盘16区域的外侧。在图11A和图11B所示的半导体封装体60中，通过位于两个位置的支撑膜部分39B形成框架部件。
此外，框架形结构部分39A与包围框架形结构部分39A的支撑膜部分39B和39B具有彼此相同的高度。因此，当要将粘合剂溶液施加在倒装芯片连接焊盘16的焊盘部分16a上时，可以用掩模带42可靠地覆盖形成有连接盘焊盘18的区域。因此，对于倒装芯片连接焊盘16，焊料52a可以仅覆盖在焊盘部分16a的表面上。此外，对于连接盘焊盘18，预定的金属镀层36可以仅施加在焊盘部分18a的表面上。因此，可以通过倒装芯片连接和BGA连接或LGA连接安装半导体元件或其它半导体封装体。
根据本实施例的半导体封装体60的制造方法的特征在于执行以下步骤：当在树脂基板30中形成倒装芯片连接焊盘16和连接盘焊盘18时，将类似桥形的掩模带42连接在框架形结构部分39A和具有与框架形结构部分39A相同的高度并且布置为包围框架形结构部分39A的支撑膜部分39B上，从而平整地粘贴掩模带42，然后在防止连接盘焊盘18暴露于形成有连接盘焊盘18的部分以外的部分的状态下，形成倒装芯片连接焊盘16。通过用掩模带42无间隙地完全覆盖连接盘焊盘18，可以可靠地保护连接盘焊盘18，从而防止焊料覆盖在连接盘焊盘18上。此外，可以容易地进行将掩模带42粘在框架形结构部分39A和支撑膜部分39B上的操作，或从框架形结构部分39A和支撑膜部分39B上剥离掩模带42的操作。
在半导体封装体60的制造方法中，还可以提出施加液态抗蚀剂覆盖连接盘焊盘18的方法作为涂覆连接盘焊盘18以将焊料覆盖在倒装芯片连接焊盘16上的另一种方法。然而，在这种方法的情况下，需要施加抗蚀剂，然后通过曝光和显影露出形成有倒装芯片连接焊盘16的区域。所以存在由于步骤复杂而降低生产率的问题。此外，在该方法中，在粘贴焊料粉末52之后还要去掉抗蚀层。因此，存在这样的问题，即：在去掉抗蚀层时焊料粉末52也可能被去掉。
使用掩模带42制造半导体封装体60的方法不会产生问题，所以是极好的和高效的方法，因而可以适当地用作大规模生产半导体封装体60的实际方法。
在将半导体元件10安装在半导体封装体60上的情况下，优选的是将半导体元件10倒装连接在倒装芯片连接焊盘16上，并且将底部填充树脂37注入半导体元件10与倒装芯片连接焊盘16的结合区域。
在注入底部填充树脂37的一些情况下会产生放气现象。在形成连接盘焊盘18的区域中，框架形结构部分39A和支撑膜部分39B突起到高于连接盘焊盘18表面位置的位置。因此，可以防止放出的气体接触连接盘焊盘18，从而保护连接盘焊盘18的表面。因此，可以适当地保持连接盘焊盘18的表面处理(例如，镍镀层和金镀层)的状态。图12是剖视图，示出了使用根据本实施例的半导体封装体的半导体器件的结构的实例。
如图13所示，本发明可以构造成具有所谓POP结构的半导体器件70，在该POP结构中，按照上述方式形成的半导体器件70A和70B竖直层叠在一起。下层半导体器件70B与上层半导体器件70A通过焊球15A彼此电连接，其中该焊球为上层半导体器件70A的外部连接端子。可以防止底部填充树脂37流向连接盘焊盘18，而且保持结合性。因此，也可以可靠地实现上层半导体器件70A与下层半导体器件70B的电连接。
如上文所述，在通过框架形结构部分39A和支撑膜部分39B注入底部填充树脂37时，下层半导体器件70B的连接盘焊盘18不会受到放气现象的影响。因此，可以实现上层半导体器件70A中的焊球15A与下层半导体器件70B的连接盘焊盘18的高质量连接。这样，可以增强连接的可靠性。
虽然已经基于上面的实施例详细描述了本发明，但是本发明并不限于该实施例，相反，不脱离本发明范围的各种变化形式必然属于本发明的技术范围。例如，虽然在本实施例中已经描述了以下这种构造，即：在把掩模带42粘贴在形成有连接盘焊盘18的区域上时，形成具有与框架形结构部分39A相同的高度并且从外侧包围框架形结构部分39A的框架形支撑膜部分39B，但是支撑膜部分39B不必一定呈类似框架的形状。此外，支撑膜部分39B的高度不必一定与框架形结构部分39A的高度相同，只要能实现本发明的优点即可。
只要支撑膜部分39B能够与框架形结构部分39A一起利用掩模带42平整地挡住形成有连接盘焊盘18的区域的内部就足够了，并且支撑膜部分39B可以形成为类似栅格或离散的点，此外，还可以采用如下构造，即：在形成有连接盘焊盘18的区域的整个内部都布置支撑膜部分39B，并且仅露出连接盘焊盘18部分。另外，还可以采用在框架形结构部分39A外侧形成多个支撑膜部分39B的构造。
此外，当然，在制造中可以采用能够防止在半导体封装体60和半导体器件70中产生翘曲的支撑膜部分39B的配线图案。
此外，虽然在本实施例中已经描述了以下这种构造，即：如图4所示，树脂基板30的整个表面都被作为第一层的阻焊层38覆盖，并且通过曝光和显影在树脂基板30的表面上仅露出用作倒装芯片连接焊盘16的焊盘部分16a和用作连接盘焊盘18的焊盘部分18a，并且如图5所示，作为第二层的阻焊层覆盖在形成有连接盘焊盘18的区域上，从而形成框架形结构部分39A和支撑膜部分39B，但是，也可以通过采用以下这种结构获得与本实施例相同的功能和优点，即：作为第一层的阻焊层38不覆盖形成有倒装芯片连接焊盘16的区域，而是由作为第一层的阻焊层38形成框架形结构部分和支撑膜部分。
此外，虽然在本实施例中已经描述了以下这种构造，即：通过BGA连接在半导体封装体60上安装半导体元件10，其中半导体封装体60安装在半导体封装体60的基板上部，但是，当然也可以通过除BGA连接以外的引线结合使半导体元件10与安装在半导体封装体60的基板的上部的半导体封装体60连接。
虽然在本实施例中已经描述了单个基板部分或者半导体封装体，但是也可以制造其中将大量半导体封装体60组装到大块树脂基板中的半导体封装体作为工件，然后在实际制造过程的最后制造阶段中将该工件分成多个块。

Claims (7)

1.一种半导体封装体，包括：
基板，其包括：
形成有连接盘焊盘的第一区域；以及
形成有倒装芯片连接焊盘的第二区域，所述第一区域位于所述第二区域的外侧；以及
保护部件，其使所述第一区域内的连接盘焊盘露出，
其中，所述保护部件包括：
框架形结构部分，其布置在所述第一区域与所述第二区域之间从而包围所述第二区域；以及
支撑膜部分，其布置成框架形从而沿着所述基板的表面的最外周包围所述第一区域，
所述连接盘焊盘被阻焊层露出，并且
所述框架形结构部分和所述支撑膜部分设置在所述阻焊层上。
2.根据权利要求1所述的半导体封装体，其中，
所述支撑膜部分形成为从外侧包围所述框架形结构部分的框架形状。
3.根据权利要求1所述的半导体封装体，其中，
所述支撑膜部分形成为位于所述框架形结构部分外侧的离散点形状。
4.根据权利要求1所述的半导体封装体，其中，
所述支撑膜部分形成在所述连接盘焊盘的最外围位置的外侧。
5.根据权利要求1所述的半导体封装体，其中，
所述框架形结构部分与所述支撑膜部分的高度相同。
6.一种半导体器件，在所述半导体器件中，将半导体元件安装在根据权利要求1所述的半导体封装体上，其中，
所述安装在半导体封装体上的半导体元件是通过倒装芯片连接方式来连接的。
7.一种半导体器件，其中，
在竖直方向上层叠多个根据权利要求6所述的半导体器件，并且
上层半导体器件中的外部连接端子与下层半导体器件中的连接盘焊盘连接。
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