CN101859752B - 具有内嵌式芯片及硅导通孔晶粒之堆栈封装结构及其制造方法 - Google Patents
具有内嵌式芯片及硅导通孔晶粒之堆栈封装结构及其制造方法 Download PDFInfo
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- CN101859752B CN101859752B CN2010101353731A CN201010135373A CN101859752B CN 101859752 B CN101859752 B CN 101859752B CN 2010101353731 A CN2010101353731 A CN 2010101353731A CN 201010135373 A CN201010135373 A CN 201010135373A CN 101859752 B CN101859752 B CN 101859752B
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/18—High density interconnect [HDI] connectors; Manufacturing methods related thereto
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/04105—Bonding areas formed on an encapsulation of the semiconductor or solid-state body, e.g. bonding areas on chip-scale packages
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
- H01L2224/12105—Bump connectors formed on an encapsulation of the semiconductor or solid-state body, e.g. bumps on chip-scale packages
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
- H01L2224/161—Disposition
- H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/16227—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation the bump connector connecting to a bond pad of the item
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/18—High density interconnect [HDI] connectors; Manufacturing methods related thereto
- H01L2224/19—Manufacturing methods of high density interconnect preforms
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73267—Layer and HDI connectors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01029—Copper [Cu]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01047—Silver [Ag]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/14—Integrated circuits
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/30—Technical effects
- H01L2924/35—Mechanical effects
- H01L2924/351—Thermal stress
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Wire Bonding (AREA)
- Production Of Multi-Layered Print Wiring Board (AREA)
Abstract
Description
Claims (10)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US12/385,358 US8106504B2 (en) | 2008-09-25 | 2009-04-06 | Stacking package structure with chip embedded inside and die having through silicon via and method of the same |
US12/385,358 | 2009-04-06 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN101859752A CN101859752A (zh) | 2010-10-13 |
CN101859752B true CN101859752B (zh) | 2012-02-08 |
Family
ID=42945537
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN2010101353731A Expired - Fee Related CN101859752B (zh) | 2009-04-06 | 2010-03-30 | 具有内嵌式芯片及硅导通孔晶粒之堆栈封装结构及其制造方法 |
Country Status (2)
Country | Link |
---|---|
CN (1) | CN101859752B (zh) |
TW (1) | TWI460844B (zh) |
Families Citing this family (20)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102054787B (zh) * | 2010-10-21 | 2013-08-14 | 日月光半导体制造股份有限公司 | 堆栈式封装结构及其制造方法 |
CN102088015B (zh) * | 2010-12-03 | 2013-03-06 | 日月光半导体制造股份有限公司 | 半导体封装件及其制造方法 |
US8552518B2 (en) * | 2011-06-09 | 2013-10-08 | Optiz, Inc. | 3D integrated microelectronic assembly with stress reducing interconnects |
TWI482271B (zh) * | 2011-11-04 | 2015-04-21 | King Dragon Internat Inc | 一種具有雙層基板之影像感測器封裝結構及方法 |
MY165677A (en) * | 2011-12-27 | 2018-04-18 | Intel Corp | Embedded through-silicon-via |
US8901435B2 (en) * | 2012-08-14 | 2014-12-02 | Bridge Semiconductor Corporation | Hybrid wiring board with built-in stopper, interposer and build-up circuitry |
US9331032B2 (en) * | 2013-03-06 | 2016-05-03 | Taiwan Semiconductor Manufacturing Company, Ltd. | Hybrid bonding and apparatus for performing the same |
KR101994715B1 (ko) * | 2013-06-24 | 2019-07-01 | 삼성전기주식회사 | 전자 소자 모듈 제조 방법 |
KR20150025129A (ko) * | 2013-08-28 | 2015-03-10 | 삼성전기주식회사 | 전자 소자 모듈 및 그 제조 방법 |
US9379072B2 (en) * | 2013-11-27 | 2016-06-28 | Xintec Inc. | Chip package and method for forming the same |
US9209154B2 (en) * | 2013-12-04 | 2015-12-08 | Bridge Semiconductor Corporation | Semiconductor package with package-on-package stacking capability and method of manufacturing the same |
CN105448855A (zh) * | 2014-08-29 | 2016-03-30 | 展讯通信(上海)有限公司 | 可更改电路配置的封装结构 |
CN106158772B (zh) * | 2015-03-27 | 2018-12-18 | 蔡亲佳 | 板级嵌入式封装结构及其制作方法 |
CN109904127B (zh) * | 2015-06-16 | 2023-09-26 | 合肥矽迈微电子科技有限公司 | 封装结构及封装方法 |
CN106816416B (zh) * | 2015-11-27 | 2020-02-14 | 蔡亲佳 | 半导体嵌入式混合封装结构及其制作方法 |
US10515922B2 (en) * | 2017-11-15 | 2019-12-24 | Taiwan Semiconductor Manufacturing Company, Ltd. | Multi-chip integrated fan-out package |
DE102018122228B4 (de) | 2017-11-15 | 2023-01-26 | Taiwan Semiconductor Manufacturing Company, Ltd. | Integriertes Multichip-Fan-Out-Package sowie Verfahren zu dessen Herstellung |
TWI677950B (zh) * | 2018-02-09 | 2019-11-21 | 薩摩亞商茂邦電子有限公司 | 垂直式晶片與水平式晶片之嵌入型封裝結構及其製造方法 |
KR102561946B1 (ko) * | 2018-11-13 | 2023-08-01 | 삼성전기주식회사 | 패키지 구조물 |
US20220157732A1 (en) * | 2020-11-13 | 2022-05-19 | Mediatek Inc. | Semiconductor package and method of forming the same |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2003092375A (ja) * | 2001-09-19 | 2003-03-28 | Matsushita Electric Ind Co Ltd | 半導体装置、その製造方法およびその検査方法 |
CN101197360A (zh) * | 2006-12-07 | 2008-06-11 | 育霈科技股份有限公司 | 多芯片封装及其方法 |
CN101211899A (zh) * | 2006-12-29 | 2008-07-02 | 海力士半导体有限公司 | 适于高速操作且电连接长度减少的堆叠封装及其制造方法 |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3809053B2 (ja) * | 2000-01-20 | 2006-08-16 | 新光電気工業株式会社 | 電子部品パッケージ |
JP2004186422A (ja) * | 2002-12-03 | 2004-07-02 | Shinko Electric Ind Co Ltd | 電子部品実装構造及びその製造方法 |
EP1951015A4 (en) * | 2005-10-14 | 2011-03-23 | Fujikura Ltd | PRINTED CIRCUIT BOARD AND METHOD FOR MANUFACTURING PRINTED CIRCUIT BOARD |
US20090166873A1 (en) * | 2007-12-27 | 2009-07-02 | Advanced Chip Engineering Technology Inc. | Inter-connecting structure for semiconductor device package and method of the same |
-
2010
- 2010-03-26 TW TW099109115A patent/TWI460844B/zh not_active IP Right Cessation
- 2010-03-30 CN CN2010101353731A patent/CN101859752B/zh not_active Expired - Fee Related
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2003092375A (ja) * | 2001-09-19 | 2003-03-28 | Matsushita Electric Ind Co Ltd | 半導体装置、その製造方法およびその検査方法 |
CN101197360A (zh) * | 2006-12-07 | 2008-06-11 | 育霈科技股份有限公司 | 多芯片封装及其方法 |
CN101211899A (zh) * | 2006-12-29 | 2008-07-02 | 海力士半导体有限公司 | 适于高速操作且电连接长度减少的堆叠封装及其制造方法 |
Also Published As
Publication number | Publication date |
---|---|
CN101859752A (zh) | 2010-10-13 |
TW201110309A (en) | 2011-03-16 |
TWI460844B (zh) | 2014-11-11 |
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C06 | Publication | ||
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ASS | Succession or assignment of patent right |
Owner name: JINLONG INTERNATIONAL CORP. Free format text: FORMER OWNER: YANG WEN Effective date: 20110513 |
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Free format text: CORRECT: ADDRESS; FROM: TAIWAN, CHINA TO: POSTAL MAILBOX 662, WEEKHANS ROAD, ROAD TOWN, TORTOLA ISLAND, BRITISH VIRGIN ISLANDS |
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TA01 | Transfer of patent application right |
Effective date of registration: 20110513 Address after: The British Virgin Islands holding investment Island Rhodes town Weikehansilu P.O. Box No. 662 Applicant after: Jinlong International Corporation Address before: Taiwan, China Applicant before: Yang Wenkun |
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CF01 | Termination of patent right due to non-payment of annual fee | ||
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Granted publication date: 20120208 Termination date: 20200330 |