CN101859752A - 具有内嵌式芯片及硅导通孔晶粒之堆栈封装结构及其制造方法 - Google Patents
具有内嵌式芯片及硅导通孔晶粒之堆栈封装结构及其制造方法 Download PDFInfo
- Publication number
- CN101859752A CN101859752A CN201010135373A CN201010135373A CN101859752A CN 101859752 A CN101859752 A CN 101859752A CN 201010135373 A CN201010135373 A CN 201010135373A CN 201010135373 A CN201010135373 A CN 201010135373A CN 101859752 A CN101859752 A CN 101859752A
- Authority
- CN
- China
- Prior art keywords
- layer
- crystal grain
- substrate
- dielectric layer
- hole
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/18—High density interconnect [HDI] connectors; Manufacturing methods related thereto
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/04105—Bonding areas formed on an encapsulation of the semiconductor or solid-state body, e.g. bonding areas on chip-scale packages
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
- H01L2224/12105—Bump connectors formed on an encapsulation of the semiconductor or solid-state body, e.g. bumps on chip-scale packages
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
- H01L2224/161—Disposition
- H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/16227—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation the bump connector connecting to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/18—High density interconnect [HDI] connectors; Manufacturing methods related thereto
- H01L2224/19—Manufacturing methods of high density interconnect preforms
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73267—Layer and HDI connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01029—Copper [Cu]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01047—Silver [Ag]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/14—Integrated circuits
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/30—Technical effects
- H01L2924/35—Mechanical effects
- H01L2924/351—Thermal stress
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Wire Bonding (AREA)
- Production Of Multi-Layered Print Wiring Board (AREA)
Abstract
Description
Claims (10)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US12/385,358 | 2009-04-06 | ||
US12/385,358 US8106504B2 (en) | 2008-09-25 | 2009-04-06 | Stacking package structure with chip embedded inside and die having through silicon via and method of the same |
Publications (2)
Publication Number | Publication Date |
---|---|
CN101859752A true CN101859752A (zh) | 2010-10-13 |
CN101859752B CN101859752B (zh) | 2012-02-08 |
Family
ID=42945537
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN2010101353731A Expired - Fee Related CN101859752B (zh) | 2009-04-06 | 2010-03-30 | 具有内嵌式芯片及硅导通孔晶粒之堆栈封装结构及其制造方法 |
Country Status (2)
Country | Link |
---|---|
CN (1) | CN101859752B (zh) |
TW (1) | TWI460844B (zh) |
Cited By (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102054787A (zh) * | 2010-10-21 | 2011-05-11 | 日月光半导体制造股份有限公司 | 堆栈式封装结构及其制造方法 |
CN102088015A (zh) * | 2010-12-03 | 2011-06-08 | 日月光半导体制造股份有限公司 | 半导体封装件及其制造方法 |
CN102820274A (zh) * | 2011-06-09 | 2012-12-12 | 奥普蒂兹公司 | 具有应力减小互连的3d集成微电子组件及其制作方法 |
CN103094291A (zh) * | 2011-11-04 | 2013-05-08 | 金龙国际公司 | 一种具有双层基板的影像感测器封装结构 |
CN104037102A (zh) * | 2013-03-06 | 2014-09-10 | 台湾积体电路制造股份有限公司 | 混合接合及执行混合接合的设备 |
CN104241255A (zh) * | 2013-06-24 | 2014-12-24 | 三星电机株式会社 | 电子组件模块及其制造方法 |
CN104425465A (zh) * | 2013-08-28 | 2015-03-18 | 三星电机株式会社 | 电子组件模块和制造该电子组件模块的方法 |
CN104681516A (zh) * | 2013-11-27 | 2015-06-03 | 精材科技股份有限公司 | 晶片封装体及其制造方法 |
CN104733332A (zh) * | 2013-12-04 | 2015-06-24 | 钰桥半导体股份有限公司 | 具有堆叠式封装能力的半导体封装件及其制作方法 |
CN105097726A (zh) * | 2015-06-16 | 2015-11-25 | 矽力杰半导体技术(杭州)有限公司 | 封装结构及封装方法 |
CN105448855A (zh) * | 2014-08-29 | 2016-03-30 | 展讯通信(上海)有限公司 | 可更改电路配置的封装结构 |
CN106158772A (zh) * | 2015-03-27 | 2016-11-23 | 蔡亲佳 | 板级嵌入式封装结构及其制作方法 |
CN106816416A (zh) * | 2015-11-27 | 2017-06-09 | 蔡亲佳 | 半导体嵌入式混合封装结构及其制作方法 |
CN109786260A (zh) * | 2017-11-15 | 2019-05-21 | 台湾积体电路制造股份有限公司 | 多芯片集成扇出封装件 |
US11217552B2 (en) | 2017-11-15 | 2022-01-04 | Taiwan Semiconductor Manufacturing Company, Ltd. | Multi-chip integrated fan-out package |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
MY165677A (en) * | 2011-12-27 | 2018-04-18 | Intel Corp | Embedded through-silicon-via |
US8901435B2 (en) * | 2012-08-14 | 2014-12-02 | Bridge Semiconductor Corporation | Hybrid wiring board with built-in stopper, interposer and build-up circuitry |
TWI677950B (zh) * | 2018-02-09 | 2019-11-21 | 薩摩亞商茂邦電子有限公司 | 垂直式晶片與水平式晶片之嵌入型封裝結構及其製造方法 |
KR102561946B1 (ko) * | 2018-11-13 | 2023-08-01 | 삼성전기주식회사 | 패키지 구조물 |
US20220157732A1 (en) * | 2020-11-13 | 2022-05-19 | Mediatek Inc. | Semiconductor package and method of forming the same |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2003092375A (ja) * | 2001-09-19 | 2003-03-28 | Matsushita Electric Ind Co Ltd | 半導体装置、その製造方法およびその検査方法 |
CN101197360A (zh) * | 2006-12-07 | 2008-06-11 | 育霈科技股份有限公司 | 多芯片封装及其方法 |
CN101211899A (zh) * | 2006-12-29 | 2008-07-02 | 海力士半导体有限公司 | 适于高速操作且电连接长度减少的堆叠封装及其制造方法 |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3809053B2 (ja) * | 2000-01-20 | 2006-08-16 | 新光電気工業株式会社 | 電子部品パッケージ |
JP2004186422A (ja) * | 2002-12-03 | 2004-07-02 | Shinko Electric Ind Co Ltd | 電子部品実装構造及びその製造方法 |
JP4592751B2 (ja) * | 2005-10-14 | 2010-12-08 | 株式会社フジクラ | プリント配線基板の製造方法 |
US20090166873A1 (en) * | 2007-12-27 | 2009-07-02 | Advanced Chip Engineering Technology Inc. | Inter-connecting structure for semiconductor device package and method of the same |
-
2010
- 2010-03-26 TW TW099109115A patent/TWI460844B/zh not_active IP Right Cessation
- 2010-03-30 CN CN2010101353731A patent/CN101859752B/zh not_active Expired - Fee Related
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2003092375A (ja) * | 2001-09-19 | 2003-03-28 | Matsushita Electric Ind Co Ltd | 半導体装置、その製造方法およびその検査方法 |
CN101197360A (zh) * | 2006-12-07 | 2008-06-11 | 育霈科技股份有限公司 | 多芯片封装及其方法 |
CN101211899A (zh) * | 2006-12-29 | 2008-07-02 | 海力士半导体有限公司 | 适于高速操作且电连接长度减少的堆叠封装及其制造方法 |
Cited By (26)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102054787B (zh) * | 2010-10-21 | 2013-08-14 | 日月光半导体制造股份有限公司 | 堆栈式封装结构及其制造方法 |
CN102054787A (zh) * | 2010-10-21 | 2011-05-11 | 日月光半导体制造股份有限公司 | 堆栈式封装结构及其制造方法 |
CN102088015A (zh) * | 2010-12-03 | 2011-06-08 | 日月光半导体制造股份有限公司 | 半导体封装件及其制造方法 |
CN102088015B (zh) * | 2010-12-03 | 2013-03-06 | 日月光半导体制造股份有限公司 | 半导体封装件及其制造方法 |
CN102820274A (zh) * | 2011-06-09 | 2012-12-12 | 奥普蒂兹公司 | 具有应力减小互连的3d集成微电子组件及其制作方法 |
US9230947B2 (en) | 2011-06-09 | 2016-01-05 | Optiz, Inc. | Method of forming 3D integrated microelectronic assembly with stress reducing interconnects |
CN102820274B (zh) * | 2011-06-09 | 2015-10-28 | 奥普蒂兹公司 | 具有应力减小互连的3d集成微电子组件及其制作方法 |
CN103094291B (zh) * | 2011-11-04 | 2015-08-26 | 金龙国际公司 | 一种具有双层基板的影像感测器封装结构 |
CN103094291A (zh) * | 2011-11-04 | 2013-05-08 | 金龙国际公司 | 一种具有双层基板的影像感测器封装结构 |
CN104037102A (zh) * | 2013-03-06 | 2014-09-10 | 台湾积体电路制造股份有限公司 | 混合接合及执行混合接合的设备 |
CN104037102B (zh) * | 2013-03-06 | 2017-07-04 | 台湾积体电路制造股份有限公司 | 混合接合及执行混合接合的设备 |
CN104241255A (zh) * | 2013-06-24 | 2014-12-24 | 三星电机株式会社 | 电子组件模块及其制造方法 |
CN104241255B (zh) * | 2013-06-24 | 2018-04-10 | 三星电机株式会社 | 电子组件模块及其制造方法 |
CN104425465A (zh) * | 2013-08-28 | 2015-03-18 | 三星电机株式会社 | 电子组件模块和制造该电子组件模块的方法 |
CN104425465B (zh) * | 2013-08-28 | 2018-12-07 | 三星电机株式会社 | 电子组件模块和制造该电子组件模块的方法 |
CN104681516A (zh) * | 2013-11-27 | 2015-06-03 | 精材科技股份有限公司 | 晶片封装体及其制造方法 |
CN104733332A (zh) * | 2013-12-04 | 2015-06-24 | 钰桥半导体股份有限公司 | 具有堆叠式封装能力的半导体封装件及其制作方法 |
CN105448855A (zh) * | 2014-08-29 | 2016-03-30 | 展讯通信(上海)有限公司 | 可更改电路配置的封装结构 |
CN106158772A (zh) * | 2015-03-27 | 2016-11-23 | 蔡亲佳 | 板级嵌入式封装结构及其制作方法 |
CN106158772B (zh) * | 2015-03-27 | 2018-12-18 | 蔡亲佳 | 板级嵌入式封装结构及其制作方法 |
CN105097726A (zh) * | 2015-06-16 | 2015-11-25 | 矽力杰半导体技术(杭州)有限公司 | 封装结构及封装方法 |
CN105097726B (zh) * | 2015-06-16 | 2019-03-12 | 合肥矽迈微电子科技有限公司 | 封装结构及封装方法 |
CN106816416A (zh) * | 2015-11-27 | 2017-06-09 | 蔡亲佳 | 半导体嵌入式混合封装结构及其制作方法 |
CN106816416B (zh) * | 2015-11-27 | 2020-02-14 | 蔡亲佳 | 半导体嵌入式混合封装结构及其制作方法 |
CN109786260A (zh) * | 2017-11-15 | 2019-05-21 | 台湾积体电路制造股份有限公司 | 多芯片集成扇出封装件 |
US11217552B2 (en) | 2017-11-15 | 2022-01-04 | Taiwan Semiconductor Manufacturing Company, Ltd. | Multi-chip integrated fan-out package |
Also Published As
Publication number | Publication date |
---|---|
CN101859752B (zh) | 2012-02-08 |
TWI460844B (zh) | 2014-11-11 |
TW201110309A (en) | 2011-03-16 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN101859752B (zh) | 具有内嵌式芯片及硅导通孔晶粒之堆栈封装结构及其制造方法 | |
US8236608B2 (en) | Stacking package structure with chip embedded inside and die having through silicon via and method of the same | |
US7242081B1 (en) | Stacked package structure | |
US6753616B2 (en) | Flip chip semiconductor device in a molded chip scale package | |
US7618849B2 (en) | Integrated circuit package with etched leadframe for package-on-package interconnects | |
EP2798675B1 (en) | Method for a substrate core layer | |
US20090166873A1 (en) | Inter-connecting structure for semiconductor device package and method of the same | |
CN100576476C (zh) | 芯片埋入半导体封装基板结构及其制法 | |
CN101312203A (zh) | 具有晶粒接收开孔之芯片尺寸影像传感器及其制造方法 | |
US20090096098A1 (en) | Inter-connecting structure for semiconductor package and method of the same | |
CN101192587B (zh) | 半导体器件的制造方法 | |
US20080006936A1 (en) | Superfine-circuit semiconductor package structure | |
KR20070045929A (ko) | 전자 부품 내장 기판 및 그 제조 방법 | |
US6717264B2 (en) | High density integrated circuit package | |
CN101728340A (zh) | 半导体装置及其制造方法 | |
KR20080093909A (ko) | 히트 싱크 및 그라운드 차폐의 기능들을 개선하기 위한반도체 디바이스 패키지 | |
JP2008244437A (ja) | ダイ収容開口部を備えたイメージセンサパッケージおよびその方法 | |
CN103579137A (zh) | 可靠的表面安装整体功率模块 | |
US20090008777A1 (en) | Inter-connecting structure for semiconductor device package and method of the same | |
CN102034768B (zh) | 具有晶粒埋入式以及双面覆盖重增层的基板结构及其方法 | |
US20090096093A1 (en) | Inter-connecting structure for semiconductor package and method of the same | |
CN102088013A (zh) | 具有晶粒埋入式以及双面覆盖重增层之基板结构及其方法 | |
US20080224276A1 (en) | Semiconductor device package | |
CN100501986C (zh) | 半导体装置及其制造方法 | |
EP1487017A2 (en) | Thermally Enhanced Substrate for a BGA |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
ASS | Succession or assignment of patent right |
Owner name: JINLONG INTERNATIONAL CORP. Free format text: FORMER OWNER: YANG WEN Effective date: 20110513 |
|
C41 | Transfer of patent application or patent right or utility model | ||
COR | Change of bibliographic data |
Free format text: CORRECT: ADDRESS; FROM: TAIWAN, CHINA TO: POSTAL MAILBOX 662, WEEKHANS ROAD, ROAD TOWN, TORTOLA ISLAND, BRITISH VIRGIN ISLANDS |
|
TA01 | Transfer of patent application right |
Effective date of registration: 20110513 Address after: The British Virgin Islands holding investment Island Rhodes town Weikehansilu P.O. Box No. 662 Applicant after: Jinlong International Corporation Address before: Taiwan, China Applicant before: Yang Wenkun |
|
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
CF01 | Termination of patent right due to non-payment of annual fee | ||
CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20120208 Termination date: 20200330 |