CN101320181B - 显示装置及其制造方法 - Google Patents

显示装置及其制造方法 Download PDF

Info

Publication number
CN101320181B
CN101320181B CN2008100986443A CN200810098644A CN101320181B CN 101320181 B CN101320181 B CN 101320181B CN 2008100986443 A CN2008100986443 A CN 2008100986443A CN 200810098644 A CN200810098644 A CN 200810098644A CN 101320181 B CN101320181 B CN 101320181B
Authority
CN
China
Prior art keywords
mentioned
active layer
tft element
drain electrode
source electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN2008100986443A
Other languages
English (en)
Chinese (zh)
Other versions
CN101320181A (zh
Inventor
境武志
宫泽敏夫
海东拓生
三宅秀和
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Magno Seishin Co Ltd
Panasonic Intellectual Property Corp of America
Original Assignee
Panasonic Liquid Crystal Display Co Ltd
Hitachi Displays Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Panasonic Liquid Crystal Display Co Ltd, Hitachi Displays Ltd filed Critical Panasonic Liquid Crystal Display Co Ltd
Publication of CN101320181A publication Critical patent/CN101320181A/zh
Application granted granted Critical
Publication of CN101320181B publication Critical patent/CN101320181B/zh
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/1368—Active matrix addressed cells in which the switching element is a three-electrode device
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
    • H10D30/0312—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] characterised by the gate electrodes
    • H10D30/0316—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] characterised by the gate electrodes of lateral bottom-gate TFTs comprising only a single gate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
    • H10D30/0321—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] comprising silicon, e.g. amorphous silicon or polysilicon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6704—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device
    • H10D30/6713—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device characterised by the properties of the source or drain regions, e.g. compositions or sectional shapes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/673—Thin-film transistors [TFT] characterised by the electrodes characterised by the shapes, relative sizes or dispositions of the gate electrodes
    • H10D30/6732—Bottom-gate only TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/6737—Thin-film transistors [TFT] characterised by the electrodes characterised by the electrode materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6741—Group IV materials, e.g. germanium or silicon carbide
    • H10D30/6743—Silicon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6741—Group IV materials, e.g. germanium or silicon carbide
    • H10D30/6743—Silicon
    • H10D30/6745—Polycrystalline or microcrystalline silicon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices

Landscapes

  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Mathematical Physics (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Thin Film Transistor (AREA)
  • Electrodes Of Semiconductors (AREA)
CN2008100986443A 2007-06-05 2008-06-03 显示装置及其制造方法 Active CN101320181B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2007149249A JP5303119B2 (ja) 2007-06-05 2007-06-05 半導体装置
JP2007-149249 2007-06-05
JP2007149249 2007-06-05

Publications (2)

Publication Number Publication Date
CN101320181A CN101320181A (zh) 2008-12-10
CN101320181B true CN101320181B (zh) 2012-10-31

Family

ID=39791331

Family Applications (1)

Application Number Title Priority Date Filing Date
CN2008100986443A Active CN101320181B (zh) 2007-06-05 2008-06-03 显示装置及其制造方法

Country Status (6)

Country Link
US (1) US8049255B2 (enrdf_load_stackoverflow)
EP (1) EP2001046A3 (enrdf_load_stackoverflow)
JP (1) JP5303119B2 (enrdf_load_stackoverflow)
KR (1) KR100973361B1 (enrdf_load_stackoverflow)
CN (1) CN101320181B (enrdf_load_stackoverflow)
TW (1) TWI381529B (enrdf_load_stackoverflow)

Families Citing this family (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5363009B2 (ja) * 2008-02-29 2013-12-11 株式会社ジャパンディスプレイ 表示装置およびその製造方法
WO2011058865A1 (en) 2009-11-13 2011-05-19 Semiconductor Energy Laboratory Co., Ltd. Semiconductor devi ce
WO2011065243A1 (en) 2009-11-28 2011-06-03 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
CN102725841B (zh) * 2010-01-15 2016-10-05 株式会社半导体能源研究所 半导体器件
KR20110090408A (ko) * 2010-02-03 2011-08-10 삼성전자주식회사 박막 형성 방법, 표시판용 금속 배선 및 이를 포함하는 박막 트랜지스터 표시판 및 그 제조 방법
TWI500161B (zh) * 2011-06-02 2015-09-11 Au Optronics Corp 混合式薄膜電晶體及其製造方法以及顯示面板
CN102709327B (zh) * 2012-05-16 2015-06-10 京东方科技集团股份有限公司 氧化物薄膜晶体管及其制作方法、阵列基板和显示装置
JP5991668B2 (ja) * 2012-08-23 2016-09-14 株式会社ジャパンディスプレイ 表示装置及びその製造方法
KR102038633B1 (ko) 2012-11-13 2019-10-30 삼성전자주식회사 디스플레이 장치의 구동 소자 및 그 제조 방법
JP6227396B2 (ja) * 2013-12-20 2017-11-08 株式会社ジャパンディスプレイ 薄膜トランジスタ及びそれを用いた表示装置
CN103715096A (zh) * 2013-12-27 2014-04-09 京东方科技集团股份有限公司 薄膜晶体管及其制作方法、阵列基板及其制作方法
WO2015137337A1 (ja) * 2014-03-11 2015-09-17 シャープ株式会社 半導体装置およびその製造方法
US10386684B2 (en) * 2014-12-26 2019-08-20 Sharp Kabushiki Kaisha Semiconductor device, display apparatus, and method of manufacturing semiconductor device
CN106663697B (zh) * 2015-03-27 2019-11-12 堺显示器制品株式会社 薄膜晶体管及显示面板
CN105633076A (zh) * 2016-01-04 2016-06-01 京东方科技集团股份有限公司 一种显示基板及其制作方法和显示装置
CN105932066A (zh) 2016-06-07 2016-09-07 深圳市华星光电技术有限公司 金属氧化物薄膜晶体管及其制备方法
CN105895706A (zh) 2016-07-01 2016-08-24 深圳市华星光电技术有限公司 薄膜晶体管及显示装置
CN107364248B (zh) * 2017-06-29 2019-04-09 华南理工大学 一种喷墨打印薄膜与基板界面观测与调控的方法
US10431691B2 (en) * 2017-08-07 2019-10-01 Wuhan China Star Optoelectronics Semiconductor Display Technology Co., Ltd. Thin film transistor and method for manufacturing thin film transistor, and liquid crystal display panel
US10510899B2 (en) 2017-08-07 2019-12-17 Wuhan China Star Optoelectronics Semiconductor Display Technology Co., Ltd. Thin film transistor, thin film transistor manufacturing method and liquid crystal display panel
CN107369718A (zh) * 2017-08-07 2017-11-21 武汉华星光电半导体显示技术有限公司 薄膜晶体管及其制造方法、液晶显示面板
US10651257B2 (en) * 2017-12-18 2020-05-12 Wuhan China Star Optoelectronics Semiconductor Display Technology Co., Ltd. Array substrate and manufacturing method thereof
CN110581177A (zh) * 2019-08-13 2019-12-17 武汉华星光电半导体显示技术有限公司 阵列基板及其制备方法

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5294811A (en) * 1990-11-30 1994-03-15 Hitachi, Ltd. Thin film semiconductor device having inverted stagger structure, and device having such semiconductor device
US5909615A (en) * 1996-02-28 1999-06-01 International Business Machines Corporation Method for making a vertically redundant dual thin film transistor
CN1499643A (zh) * 2002-11-11 2004-05-26 友达光电股份有限公司 主动式有机发光显示器及其制造方法
CN1619392A (zh) * 2003-11-11 2005-05-25 Lg.菲利浦Lcd株式会社 包括多晶硅薄膜晶体管的液晶显示器件及其制造方法
CN1858911A (zh) * 2005-05-02 2006-11-08 三星电子株式会社 Tft阵列面板、包含它的液晶显示器及tft阵列面板制造方法

Family Cites Families (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01117068A (ja) * 1987-10-29 1989-05-09 Toshiba Corp 薄膜半導体素子
JP2647100B2 (ja) * 1987-11-10 1997-08-27 株式会社東芝 薄膜トランジスタ
US5474941A (en) * 1990-12-28 1995-12-12 Sharp Kabushiki Kaisha Method for producing an active matrix substrate
DE69125260T2 (de) * 1990-12-28 1997-10-02 Sharp Kk Ein Verfahren zum Herstellen eines Dünnfilm-Transistors und eines Aktive-Matrix-Substrates für Flüssig-Kristall-Anzeige-Anordnungen
JPH05283427A (ja) * 1991-02-18 1993-10-29 Hitachi Ltd 薄膜トランジスタの製造方法及びそれを用いたアクテブマトリックス型液晶表示装置
US5355002A (en) * 1993-01-19 1994-10-11 Industrial Technology Research Institute Structure of high yield thin film transistors
KR100229676B1 (ko) * 1996-08-30 1999-11-15 구자홍 셀프얼라인 박막트랜지스터 제조방법
JPH1140814A (ja) * 1997-07-18 1999-02-12 Furontetsuku:Kk 薄膜トランジスタ基板と液晶表示装置および薄膜トランジスタ基板の製造方法
US6197624B1 (en) 1997-08-29 2001-03-06 Semiconductor Energy Laboratory Co., Ltd. Method of adjusting the threshold voltage in an SOI CMOS
JP4049422B2 (ja) * 1997-11-18 2008-02-20 三洋電機株式会社 液晶表示装置の製造方法
US5917199A (en) * 1998-05-15 1999-06-29 Ois Optical Imaging Systems, Inc. Solid state imager including TFTS with variably doped contact layer system for reducing TFT leakage current and increasing mobility and method of making same
US6294441B1 (en) 1998-08-18 2001-09-25 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing a semiconductor device
JP2001282139A (ja) * 2000-01-27 2001-10-12 Sharp Corp アクティブマトリックス基板およびその製造方法、並びに、液晶表示装置
JP2007506139A (ja) * 2003-09-18 2007-03-15 サムスン エレクトロニクス カンパニー リミテッド 薄膜トランジスタ表示板、これを含む平板ディスプレイ表示装置及びその製造方法
JP2005108930A (ja) * 2003-09-29 2005-04-21 Sony Corp 薄膜トランジスタの製造方法および薄膜トランジスタ
US7527994B2 (en) * 2004-09-01 2009-05-05 Honeywell International Inc. Amorphous silicon thin-film transistors and methods of making the same
KR20070019457A (ko) * 2005-08-12 2007-02-15 삼성전자주식회사 박막 트랜지스터 표시판 및 이를 포함하는 액정표시장치
JP2007121788A (ja) * 2005-10-31 2007-05-17 Hitachi Displays Ltd アクティブマトリクス基板およびそれを用いた液晶表示装置
KR100671824B1 (ko) 2005-12-14 2007-01-19 진 장 역 스태거드 박막 트랜지스터 제조 방법
JP4823989B2 (ja) * 2006-09-11 2011-11-24 北京京東方光電科技有限公司 Ｔｆｔ―ｌｃｄアレイ基板及びその製造方法
KR101509663B1 (ko) * 2007-02-16 2015-04-06 삼성전자주식회사 산화물 반도체층 형성 방법 및 이를 이용한 반도체 소자제조방법

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5294811A (en) * 1990-11-30 1994-03-15 Hitachi, Ltd. Thin film semiconductor device having inverted stagger structure, and device having such semiconductor device
US5909615A (en) * 1996-02-28 1999-06-01 International Business Machines Corporation Method for making a vertically redundant dual thin film transistor
CN1499643A (zh) * 2002-11-11 2004-05-26 友达光电股份有限公司 主动式有机发光显示器及其制造方法
CN1619392A (zh) * 2003-11-11 2005-05-25 Lg.菲利浦Lcd株式会社 包括多晶硅薄膜晶体管的液晶显示器件及其制造方法
CN1858911A (zh) * 2005-05-02 2006-11-08 三星电子株式会社 Tft阵列面板、包含它的液晶显示器及tft阵列面板制造方法

Also Published As

Publication number Publication date
TW200915575A (en) 2009-04-01
JP2008305843A (ja) 2008-12-18
US20080303030A1 (en) 2008-12-11
EP2001046A3 (en) 2011-01-05
JP5303119B2 (ja) 2013-10-02
CN101320181A (zh) 2008-12-10
TWI381529B (zh) 2013-01-01
EP2001046A2 (en) 2008-12-10
KR100973361B1 (ko) 2010-07-30
KR20080107281A (ko) 2008-12-10
US8049255B2 (en) 2011-11-01

Similar Documents

Publication Publication Date Title
CN101320181B (zh) 显示装置及其制造方法
US10288967B2 (en) Array substrate, liquid crystal display panel and liquid crystal display device
KR100596143B1 (ko) 액정 표시 장치 및 그 제조 방법
CN106483728B (zh) 像素结构、阵列基板和显示装置
US10777587B2 (en) Active matrix substrate and display device provided with active matrix substrate
TW574540B (en) Pixel structure of TFT LCD
TW200842471A (en) Active device array substrate
KR100506006B1 (ko) 액정표시장치의 전계효과트랜지스터에 대한 오프-스테이트스트레스 인가용 패널구조
CN103926768A (zh) 一种阵列基板、显示面板和显示装置
CN105572992A (zh) 像素结构、阵列基板及像素结构制作方法
CN101154670A (zh) 像素结构及其制造方法
KR102068962B1 (ko) 액정표시장치용 어레이 기판
JP2014239173A (ja) 薄膜トランジスタ及びそれを用いた表示装置
JP3286843B2 (ja) 液晶パネル
JPH0926600A (ja) 液晶表示装置
KR102195275B1 (ko) 콘택홀 형성 방법 및 이를 적용한 어레이 기판
US10833197B2 (en) TFT substrate having compensation capacitance unit for change in capacitance formed between gate electrode and drain electrode
US6757033B2 (en) Liquid crystal display device and method for manufacturing the same
JPH07326767A (ja) 薄膜トランジスタおよびそれを用いた液晶表示装置
US8218097B2 (en) Liquid crystal display
CN1560687B (zh) 画素结构及其制造方法
CN101281333A (zh) Lcos芯片像素器件结构及其制备方法
US20190346726A1 (en) Display
JP2000206565A (ja) 表示装置用半導体素子及びこれを用いた液晶表示装置
JPH0748563B2 (ja) 薄膜トランジスタ装置

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
ASS Succession or assignment of patent right

Owner name: PANASONIC LCD CO., LTD.

Free format text: FORMER OWNER: IPS ALPHA SUPPORT CO., LTD.

Owner name: IPS ALPHA SUPPORT CO., LTD.

C41 Transfer of patent application or patent right or utility model
TA01 Transfer of patent application right

Effective date of registration: 20111018

Address after: Chiba County, Japan

Applicant after: Hitachi Displays, Ltd.

Co-applicant after: Panasonic Liquid Crystal Display Co.,Ltd.

Address before: Chiba County, Japan

Applicant before: Hitachi Displays, Ltd.

Co-applicant before: IPS pioneer support society

Effective date of registration: 20111018

Address after: Chiba County, Japan

Applicant after: Hitachi Displays, Ltd.

Co-applicant after: IPS Pioneer Support Society

Address before: Chiba County, Japan

Applicant before: Hitachi Displays, Ltd.

C14 Grant of patent or utility model
GR01 Patent grant
C56 Change in the name or address of the patentee

Owner name: APAN DISPLAY EAST, INC.

Free format text: FORMER NAME: HITACHI DISPLAY CO., LTD.

Owner name: JAPAN DISPLAY, INC.

Free format text: FORMER NAME: APAN DISPLAY EAST, INC.

CP01 Change in the name or title of a patent holder

Address after: Chiba County, Japan

Patentee after: Japan Display East Inc.

Patentee after: Panasonic Liquid Crystal Display Co.,Ltd.

Address before: Chiba County, Japan

Patentee before: Hitachi Displays, Ltd.

Patentee before: Panasonic Liquid Crystal Display Co.,Ltd.

CP03 Change of name, title or address

Address after: Tokyo port xixinqiao Japan three chome 7 No. 1

Patentee after: JAPAN DISPLAY Inc.

Patentee after: Panasonic Liquid Crystal Display Co.,Ltd.

Address before: Chiba County, Japan

Patentee before: Japan Display East Inc.

Patentee before: Panasonic Liquid Crystal Display Co.,Ltd.

EE01 Entry into force of recordation of patent licensing contract

Application publication date: 20081210

Assignee: BOE TECHNOLOGY GROUP Co.,Ltd.

Assignor: JAPAN DISPLAY Inc.|Panasonic Liquid Crystal Display Co.,Ltd.

Contract record no.: 2013990000688

Denomination of invention: Ion illuminating display device and mfg. method

Granted publication date: 20121031

License type: Common License

Record date: 20131016

LICC Enforcement, change and cancellation of record of contracts on the licence for exploitation of a patent or utility model
TR01 Transfer of patent right

Effective date of registration: 20231201

Address after: Tokyo, Japan

Patentee after: JAPAN DISPLAY Inc.

Patentee after: PANASONIC INTELLECTUAL PROPERTY CORPORATION OF AMERICA

Address before: Tokyo port xixinqiao Japan three chome 7 No. 1

Patentee before: JAPAN DISPLAY Inc.

Patentee before: Panasonic Liquid Crystal Display Co.,Ltd.

TR01 Transfer of patent right
TR01 Transfer of patent right
TR01 Transfer of patent right

Effective date of registration: 20250724

Address after: Tokyo, Japan

Patentee after: MAGNO SEISHIN Co., Ltd.

Country or region after: Japan

Patentee after: PANASONIC INTELLECTUAL PROPERTY CORPORATION OF AMERICA

Country or region after: U.S.A.

Address before: Tokyo, Japan

Patentee before: JAPAN DISPLAY Inc.

Country or region before: Japan

Patentee before: PANASONIC INTELLECTUAL PROPERTY CORPORATION OF AMERICA

Country or region before: U.S.A.