CN101311789A - 显示装置的制造方法 - Google Patents

显示装置的制造方法 Download PDF

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Publication number
CN101311789A
CN101311789A CNA2008101090480A CN200810109048A CN101311789A CN 101311789 A CN101311789 A CN 101311789A CN A2008101090480 A CNA2008101090480 A CN A2008101090480A CN 200810109048 A CN200810109048 A CN 200810109048A CN 101311789 A CN101311789 A CN 101311789A
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CN
China
Prior art keywords
mentioned
material layer
resin material
display device
glass substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CNA2008101090480A
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English (en)
Chinese (zh)
Inventor
波多野睦子
服部孝司
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Japan Display Inc
Original Assignee
Hitachi Displays Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Displays Ltd filed Critical Hitachi Displays Ltd
Publication of CN101311789A publication Critical patent/CN101311789A/zh
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/01—Manufacture or treatment
    • H10D86/021—Manufacture or treatment of multiple TFTs
    • H10D86/0214—Manufacture or treatment of multiple TFTs using temporary substrates
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/133305—Flexible substrates, e.g. plastics, organic film
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/1368—Active matrix addressed cells in which the switching element is a three-electrode device

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Nonlinear Science (AREA)
  • General Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Power Engineering (AREA)
  • Mathematical Physics (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Optics & Photonics (AREA)
  • Liquid Crystal (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
CNA2008101090480A 2007-05-23 2008-05-23 显示装置的制造方法 Pending CN101311789A (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007136139A JP5150138B2 (ja) 2007-05-23 2007-05-23 表示装置の製造方法
JP2007136139 2007-05-23

Publications (1)

Publication Number Publication Date
CN101311789A true CN101311789A (zh) 2008-11-26

Family

ID=40072654

Family Applications (1)

Application Number Title Priority Date Filing Date
CNA2008101090480A Pending CN101311789A (zh) 2007-05-23 2008-05-23 显示装置的制造方法

Country Status (5)

Country Link
US (1) US20080292786A1 (enExample)
JP (1) JP5150138B2 (enExample)
KR (1) KR100994870B1 (enExample)
CN (1) CN101311789A (enExample)
TW (1) TW200915250A (enExample)

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101980393A (zh) * 2010-09-21 2011-02-23 福建钧石能源有限公司 大面积柔性光电器件的制造方法
CN102636898A (zh) * 2012-03-14 2012-08-15 京东方科技集团股份有限公司 一种柔性显示装置的制备方法
CN104465698A (zh) * 2013-09-20 2015-03-25 株式会社东芝 用于制造显示设备的方法与系统
CN104685553A (zh) * 2012-09-27 2015-06-03 新日铁住金化学株式会社 显示装置的制造方法
CN109087936A (zh) * 2018-08-24 2018-12-25 京东方科技集团股份有限公司 一种柔性显示基板的制备方法
CN109690734A (zh) * 2016-10-07 2019-04-26 株式会社半导体能源研究所 玻璃衬底的清洗方法、半导体装置的制造方法及玻璃衬底
CN113424247A (zh) * 2019-02-19 2021-09-21 株式会社日本显示器 具有树脂基板的装置及其制造方法

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010032768A (ja) 2008-07-29 2010-02-12 Hitachi Displays Ltd 表示装置およびその製造方法
JP2011227369A (ja) * 2010-04-22 2011-11-10 Hitachi Displays Ltd 画像表示装置及びその製造方法
US9142797B2 (en) 2010-05-31 2015-09-22 Industrial Technology Research Institute Gas barrier substrate and organic electro-luminescent device
US20110291544A1 (en) * 2010-05-31 2011-12-01 Industrial Technology Research Institute Gas barrier substrate, package of organic electro-luminenscent device and packaging method thereof
KR101295705B1 (ko) * 2011-04-25 2013-08-16 도레이첨단소재 주식회사 투명 플라스틱기판용 페녹시수지 조성물 및 이를 이용한 투명 플라스틱 기판소재
KR101495482B1 (ko) * 2011-07-15 2015-02-24 코니카 미놀타 가부시키가이샤 가스 배리어성 필름 및 그의 제조 방법
JP5956867B2 (ja) * 2012-08-21 2016-07-27 株式会社ジャパンディスプレイ 表示装置の製造方法
US9871228B2 (en) 2012-11-30 2018-01-16 Lg Display Co., Ltd. Organic light emitting device comprising flexible substrate and method for preparing thereof
JP2014186169A (ja) * 2013-03-22 2014-10-02 Toshiba Corp 表示装置の製造方法及び表示装置
CN110047760A (zh) 2013-12-02 2019-07-23 株式会社半导体能源研究所 显示装置及其制造方法
JP2016004112A (ja) * 2014-06-16 2016-01-12 株式会社ジャパンディスプレイ 表示装置の製造方法
KR102410594B1 (ko) * 2015-04-30 2022-06-20 삼성디스플레이 주식회사 박막 트랜지스터 기판 및 이를 구비하는 표시 패널
KR102288354B1 (ko) 2015-08-10 2021-08-11 삼성디스플레이 주식회사 플렉서블 디스플레이 장치의 제조 방법
JP6784969B2 (ja) 2015-10-22 2020-11-18 天馬微電子有限公司 薄膜デバイスとその製造方法

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JP4619462B2 (ja) * 1996-08-27 2011-01-26 セイコーエプソン株式会社 薄膜素子の転写方法
DE69739376D1 (de) * 1996-08-27 2009-06-04 Seiko Epson Corp Ablösungsverfahren und Verfahren zum Übertragen eines Dünnfilm-Bauelements
JPH1126733A (ja) * 1997-07-03 1999-01-29 Seiko Epson Corp 薄膜デバイスの転写方法、薄膜デバイス、薄膜集積回路装置，アクティブマトリクス基板、液晶表示装置および電子機器
TWI225556B (en) * 2000-09-13 2004-12-21 Au Optronics Corp Manufacturing method of reflective liquid crystal display
JP2003066858A (ja) * 2001-08-23 2003-03-05 Sony Corp 薄膜デバイス基板の製造方法
JP4071652B2 (ja) * 2002-03-04 2008-04-02 株式会社 日立ディスプレイズ 有機ｅｌ発光表示装置
GB0208506D0 (en) * 2002-04-12 2002-05-22 Dupont Teijin Films Us Ltd Film coating
JP2004151561A (ja) * 2002-10-31 2004-05-27 Seiko Epson Corp 電気光学装置の製造方法
US7102155B2 (en) * 2003-09-04 2006-09-05 Hitachi, Ltd. Electrode substrate, thin film transistor, display device and their production
DE602004031142D1 (de) * 2003-11-06 2011-03-03 Sumitomo Chemical Co Dichroitischer guest-host-polarisierer mit einem orientierten polymerfilm
GB0327093D0 (en) * 2003-11-21 2003-12-24 Koninkl Philips Electronics Nv Active matrix displays and other electronic devices having plastic substrates
KR100623694B1 (ko) * 2004-08-30 2006-09-19 삼성에스디아이 주식회사 레이저 전사용 도너 기판 및 그 기판을 사용하여 제조되는유기 전계 발광 소자의 제조 방법
US20060244373A1 (en) * 2005-04-28 2006-11-02 Semiconductor Energy Laboratory Co., Ltd. Light emitting device and method for manufacturing thereof
KR100830341B1 (ko) * 2005-09-30 2008-05-16 삼성에스디아이 주식회사 액정표시장치

Cited By (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101980393A (zh) * 2010-09-21 2011-02-23 福建钧石能源有限公司 大面积柔性光电器件的制造方法
CN102636898A (zh) * 2012-03-14 2012-08-15 京东方科技集团股份有限公司 一种柔性显示装置的制备方法
WO2013135066A1 (zh) * 2012-03-14 2013-09-19 京东方科技集团股份有限公司 柔性显示装置的制备方法
US9046705B2 (en) 2012-03-14 2015-06-02 Boe Technology Group Co., Ltd. Method for preparing flexible display device
CN107728358B (zh) * 2012-09-27 2021-01-12 日铁化学材料株式会社 显示装置的制造方法
CN104685553A (zh) * 2012-09-27 2015-06-03 新日铁住金化学株式会社 显示装置的制造方法
CN104685553B (zh) * 2012-09-27 2017-10-24 新日铁住金化学株式会社 显示装置的制造方法
CN107728358A (zh) * 2012-09-27 2018-02-23 新日铁住金化学株式会社 显示装置的制造方法
CN104465698A (zh) * 2013-09-20 2015-03-25 株式会社东芝 用于制造显示设备的方法与系统
CN109690734A (zh) * 2016-10-07 2019-04-26 株式会社半导体能源研究所 玻璃衬底的清洗方法、半导体装置的制造方法及玻璃衬底
US11637009B2 (en) 2016-10-07 2023-04-25 Semiconductor Energy Laboratory Co., Ltd. Cleaning method of glass substrate, manufacturing method of semiconductor device, and glass substrate
US12437985B2 (en) 2016-10-07 2025-10-07 Semiconductor Energy Laboratory Co., Ltd. Cleaning method of glass substrate, manufacturing method of semiconductor device, and glass substrate
CN109690734B (zh) * 2016-10-07 2023-10-24 株式会社半导体能源研究所 玻璃衬底的清洗方法、半导体装置的制造方法及玻璃衬底
CN109087936A (zh) * 2018-08-24 2018-12-25 京东方科技集团股份有限公司 一种柔性显示基板的制备方法
US10910451B2 (en) 2018-08-24 2021-02-02 Boe Technology Group Co., Ltd. Method for fabricating flexible display substrate
CN113424247B (zh) * 2019-02-19 2023-03-28 株式会社日本显示器 具有树脂基板的装置及其制造方法
CN113424247A (zh) * 2019-02-19 2021-09-21 株式会社日本显示器 具有树脂基板的装置及其制造方法

Also Published As

Publication number Publication date
KR20080103443A (ko) 2008-11-27
JP2008292608A (ja) 2008-12-04
TWI375193B (enExample) 2012-10-21
JP5150138B2 (ja) 2013-02-20
TW200915250A (en) 2009-04-01
KR100994870B1 (ko) 2010-11-16
US20080292786A1 (en) 2008-11-27

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Open date: 20081126