JP5150138B2 - 表示装置の製造方法 - Google Patents

表示装置の製造方法 Download PDF

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Publication number
JP5150138B2
JP5150138B2 JP2007136139A JP2007136139A JP5150138B2 JP 5150138 B2 JP5150138 B2 JP 5150138B2 JP 2007136139 A JP2007136139 A JP 2007136139A JP 2007136139 A JP2007136139 A JP 2007136139A JP 5150138 B2 JP5150138 B2 JP 5150138B2
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Japan
Prior art keywords
resin material
material layer
display device
glass substrate
manufacturing
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Active
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JP2007136139A
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English (en)
Japanese (ja)
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JP2008292608A5 (enExample
JP2008292608A (ja
Inventor
睦子 波多野
孝司 服部
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Liquid Crystal Display Co Ltd
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Panasonic Liquid Crystal Display Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Panasonic Liquid Crystal Display Co Ltd filed Critical Panasonic Liquid Crystal Display Co Ltd
Priority to JP2007136139A priority Critical patent/JP5150138B2/ja
Priority to TW097118732A priority patent/TW200915250A/zh
Priority to US12/153,568 priority patent/US20080292786A1/en
Priority to KR1020080047647A priority patent/KR100994870B1/ko
Priority to CNA2008101090480A priority patent/CN101311789A/zh
Publication of JP2008292608A publication Critical patent/JP2008292608A/ja
Publication of JP2008292608A5 publication Critical patent/JP2008292608A5/ja
Application granted granted Critical
Publication of JP5150138B2 publication Critical patent/JP5150138B2/ja
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/01—Manufacture or treatment
    • H10D86/021—Manufacture or treatment of multiple TFTs
    • H10D86/0214—Manufacture or treatment of multiple TFTs using temporary substrates
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/133305—Flexible substrates, e.g. plastics, organic film
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/1368—Active matrix addressed cells in which the switching element is a three-electrode device

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Nonlinear Science (AREA)
  • General Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Power Engineering (AREA)
  • Mathematical Physics (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Optics & Photonics (AREA)
  • Liquid Crystal (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
JP2007136139A 2007-05-23 2007-05-23 表示装置の製造方法 Active JP5150138B2 (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP2007136139A JP5150138B2 (ja) 2007-05-23 2007-05-23 表示装置の製造方法
TW097118732A TW200915250A (en) 2007-05-23 2008-05-21 Method of manufacturing display device
US12/153,568 US20080292786A1 (en) 2007-05-23 2008-05-21 Method of manufacturing display device
KR1020080047647A KR100994870B1 (ko) 2007-05-23 2008-05-22 표시 장치의 제조 방법
CNA2008101090480A CN101311789A (zh) 2007-05-23 2008-05-23 显示装置的制造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2007136139A JP5150138B2 (ja) 2007-05-23 2007-05-23 表示装置の製造方法

Publications (3)

Publication Number Publication Date
JP2008292608A JP2008292608A (ja) 2008-12-04
JP2008292608A5 JP2008292608A5 (enExample) 2010-04-15
JP5150138B2 true JP5150138B2 (ja) 2013-02-20

Family

ID=40072654

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2007136139A Active JP5150138B2 (ja) 2007-05-23 2007-05-23 表示装置の製造方法

Country Status (5)

Country Link
US (1) US20080292786A1 (enExample)
JP (1) JP5150138B2 (enExample)
KR (1) KR100994870B1 (enExample)
CN (1) CN101311789A (enExample)
TW (1) TW200915250A (enExample)

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JP2010032768A (ja) 2008-07-29 2010-02-12 Hitachi Displays Ltd 表示装置およびその製造方法
JP2011227369A (ja) 2010-04-22 2011-11-10 Hitachi Displays Ltd 画像表示装置及びその製造方法
US9142797B2 (en) 2010-05-31 2015-09-22 Industrial Technology Research Institute Gas barrier substrate and organic electro-luminescent device
US20110291544A1 (en) * 2010-05-31 2011-12-01 Industrial Technology Research Institute Gas barrier substrate, package of organic electro-luminenscent device and packaging method thereof
CN101980393A (zh) * 2010-09-21 2011-02-23 福建钧石能源有限公司 大面积柔性光电器件的制造方法
KR101295705B1 (ko) * 2011-04-25 2013-08-16 도레이첨단소재 주식회사 투명 플라스틱기판용 페녹시수지 조성물 및 이를 이용한 투명 플라스틱 기판소재
EP2732966B1 (en) * 2011-07-15 2016-03-02 Konica Minolta, Inc. Gas barrier film and method for producing same
CN102636898B (zh) * 2012-03-14 2014-03-12 京东方科技集团股份有限公司 一种柔性显示装置的制备方法
JP5956867B2 (ja) * 2012-08-21 2016-07-27 株式会社ジャパンディスプレイ 表示装置の製造方法
KR102087647B1 (ko) * 2012-09-27 2020-03-11 닛테츠 케미컬 앤드 머티리얼 가부시키가이샤 표시 장치의 제조 방법
CN104854722B (zh) * 2012-11-30 2017-09-22 乐金显示有限公司 包括柔性基板的有机发光器件及其制备方法
JP2014186169A (ja) * 2013-03-22 2014-10-02 Toshiba Corp 表示装置の製造方法及び表示装置
JP2015060780A (ja) * 2013-09-20 2015-03-30 株式会社東芝 表示装置の製造方法及び製造システム
CN106597697A (zh) 2013-12-02 2017-04-26 株式会社半导体能源研究所 显示装置及其制造方法
JP2016004112A (ja) * 2014-06-16 2016-01-12 株式会社ジャパンディスプレイ 表示装置の製造方法
KR102410594B1 (ko) * 2015-04-30 2022-06-20 삼성디스플레이 주식회사 박막 트랜지스터 기판 및 이를 구비하는 표시 패널
KR102288354B1 (ko) 2015-08-10 2021-08-11 삼성디스플레이 주식회사 플렉서블 디스플레이 장치의 제조 방법
JP6784969B2 (ja) 2015-10-22 2020-11-18 天馬微電子有限公司 薄膜デバイスとその製造方法
KR102554691B1 (ko) * 2016-10-07 2023-07-11 가부시키가이샤 한도오따이 에네루기 켄큐쇼 유리 기판의 세정 방법, 반도체 장치의 제작 방법, 및 유리 기판
CN109087936A (zh) * 2018-08-24 2018-12-25 京东方科技集团股份有限公司 一种柔性显示基板的制备方法
JP7306835B2 (ja) * 2019-02-19 2023-07-11 株式会社ジャパンディスプレイ 樹脂基板を有する装置及びその製造方法

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EP1655633A3 (en) * 1996-08-27 2006-06-21 Seiko Epson Corporation Exfoliating method, transferring method of thin film device, thin film integrated circuit device, and liquid crystal display device
JP4619462B2 (ja) * 1996-08-27 2011-01-26 セイコーエプソン株式会社 薄膜素子の転写方法
JPH1126733A (ja) * 1997-07-03 1999-01-29 Seiko Epson Corp 薄膜デバイスの転写方法、薄膜デバイス、薄膜集積回路装置，アクティブマトリクス基板、液晶表示装置および電子機器
TWI225556B (en) * 2000-09-13 2004-12-21 Au Optronics Corp Manufacturing method of reflective liquid crystal display
JP2003066858A (ja) * 2001-08-23 2003-03-05 Sony Corp 薄膜デバイス基板の製造方法
JP4071652B2 (ja) * 2002-03-04 2008-04-02 株式会社 日立ディスプレイズ 有機ｅｌ発光表示装置
GB0208506D0 (en) * 2002-04-12 2002-05-22 Dupont Teijin Films Us Ltd Film coating
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Also Published As

Publication number Publication date
TWI375193B (enExample) 2012-10-21
KR20080103443A (ko) 2008-11-27
KR100994870B1 (ko) 2010-11-16
US20080292786A1 (en) 2008-11-27
CN101311789A (zh) 2008-11-26
JP2008292608A (ja) 2008-12-04
TW200915250A (en) 2009-04-01

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