KR100994870B1 - 표시 장치의 제조 방법 - Google Patents

표시 장치의 제조 방법 Download PDF

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Publication number
KR100994870B1
KR100994870B1 KR1020080047647A KR20080047647A KR100994870B1 KR 100994870 B1 KR100994870 B1 KR 100994870B1 KR 1020080047647 A KR1020080047647 A KR 1020080047647A KR 20080047647 A KR20080047647 A KR 20080047647A KR 100994870 B1 KR100994870 B1 KR 100994870B1
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South Korea
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material layer
resin material
glass substrate
display circuit
substrate
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Korean (ko)
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KR20080103443A (ko
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무쯔꼬 하따노
다까시 하또리
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가부시키가이샤 히타치 디스프레이즈
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/01—Manufacture or treatment
    • H10D86/021—Manufacture or treatment of multiple TFTs
    • H10D86/0214—Manufacture or treatment of multiple TFTs using temporary substrates
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/133305—Flexible substrates, e.g. plastics, organic film
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/1368—Active matrix addressed cells in which the switching element is a three-electrode device

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Nonlinear Science (AREA)
  • General Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Power Engineering (AREA)
  • Mathematical Physics (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Optics & Photonics (AREA)
  • Liquid Crystal (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
KR1020080047647A 2007-05-23 2008-05-22 표시 장치의 제조 방법 Active KR100994870B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007136139A JP5150138B2 (ja) 2007-05-23 2007-05-23 表示装置の製造方法
JPJP-P-2007-00136139 2007-05-23

Publications (2)

Publication Number Publication Date
KR20080103443A KR20080103443A (ko) 2008-11-27
KR100994870B1 true KR100994870B1 (ko) 2010-11-16

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KR1020080047647A Active KR100994870B1 (ko) 2007-05-23 2008-05-22 표시 장치의 제조 방법

Country Status (5)

Country Link
US (1) US20080292786A1 (enExample)
JP (1) JP5150138B2 (enExample)
KR (1) KR100994870B1 (enExample)
CN (1) CN101311789A (enExample)
TW (1) TW200915250A (enExample)

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* Cited by examiner, † Cited by third party
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JP2010032768A (ja) 2008-07-29 2010-02-12 Hitachi Displays Ltd 表示装置およびその製造方法
JP2011227369A (ja) 2010-04-22 2011-11-10 Hitachi Displays Ltd 画像表示装置及びその製造方法
US9142797B2 (en) 2010-05-31 2015-09-22 Industrial Technology Research Institute Gas barrier substrate and organic electro-luminescent device
US20110291544A1 (en) * 2010-05-31 2011-12-01 Industrial Technology Research Institute Gas barrier substrate, package of organic electro-luminenscent device and packaging method thereof
CN101980393A (zh) * 2010-09-21 2011-02-23 福建钧石能源有限公司 大面积柔性光电器件的制造方法
KR101295705B1 (ko) * 2011-04-25 2013-08-16 도레이첨단소재 주식회사 투명 플라스틱기판용 페녹시수지 조성물 및 이를 이용한 투명 플라스틱 기판소재
EP2732966B1 (en) * 2011-07-15 2016-03-02 Konica Minolta, Inc. Gas barrier film and method for producing same
CN102636898B (zh) * 2012-03-14 2014-03-12 京东方科技集团股份有限公司 一种柔性显示装置的制备方法
JP5956867B2 (ja) * 2012-08-21 2016-07-27 株式会社ジャパンディスプレイ 表示装置の製造方法
KR102087647B1 (ko) * 2012-09-27 2020-03-11 닛테츠 케미컬 앤드 머티리얼 가부시키가이샤 표시 장치의 제조 방법
CN104854722B (zh) * 2012-11-30 2017-09-22 乐金显示有限公司 包括柔性基板的有机发光器件及其制备方法
JP2014186169A (ja) * 2013-03-22 2014-10-02 Toshiba Corp 表示装置の製造方法及び表示装置
JP2015060780A (ja) * 2013-09-20 2015-03-30 株式会社東芝 表示装置の製造方法及び製造システム
CN106597697A (zh) 2013-12-02 2017-04-26 株式会社半导体能源研究所 显示装置及其制造方法
JP2016004112A (ja) * 2014-06-16 2016-01-12 株式会社ジャパンディスプレイ 表示装置の製造方法
KR102410594B1 (ko) * 2015-04-30 2022-06-20 삼성디스플레이 주식회사 박막 트랜지스터 기판 및 이를 구비하는 표시 패널
KR102288354B1 (ko) 2015-08-10 2021-08-11 삼성디스플레이 주식회사 플렉서블 디스플레이 장치의 제조 방법
JP6784969B2 (ja) 2015-10-22 2020-11-18 天馬微電子有限公司 薄膜デバイスとその製造方法
KR102554691B1 (ko) * 2016-10-07 2023-07-11 가부시키가이샤 한도오따이 에네루기 켄큐쇼 유리 기판의 세정 방법, 반도체 장치의 제작 방법, 및 유리 기판
CN109087936A (zh) * 2018-08-24 2018-12-25 京东方科技集团股份有限公司 一种柔性显示基板的制备方法
JP7306835B2 (ja) * 2019-02-19 2023-07-11 株式会社ジャパンディスプレイ 樹脂基板を有する装置及びその製造方法

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EP1655633A3 (en) * 1996-08-27 2006-06-21 Seiko Epson Corporation Exfoliating method, transferring method of thin film device, thin film integrated circuit device, and liquid crystal display device
JP4619462B2 (ja) * 1996-08-27 2011-01-26 セイコーエプソン株式会社 薄膜素子の転写方法
JPH1126733A (ja) * 1997-07-03 1999-01-29 Seiko Epson Corp 薄膜デバイスの転写方法、薄膜デバイス、薄膜集積回路装置，アクティブマトリクス基板、液晶表示装置および電子機器
TWI225556B (en) * 2000-09-13 2004-12-21 Au Optronics Corp Manufacturing method of reflective liquid crystal display
JP2003066858A (ja) * 2001-08-23 2003-03-05 Sony Corp 薄膜デバイス基板の製造方法
JP4071652B2 (ja) * 2002-03-04 2008-04-02 株式会社 日立ディスプレイズ 有機ｅｌ発光表示装置
GB0208506D0 (en) * 2002-04-12 2002-05-22 Dupont Teijin Films Us Ltd Film coating
JP2004151561A (ja) * 2002-10-31 2004-05-27 Seiko Epson Corp 電気光学装置の製造方法
US7102155B2 (en) * 2003-09-04 2006-09-05 Hitachi, Ltd. Electrode substrate, thin film transistor, display device and their production
KR101174749B1 (ko) * 2003-11-06 2012-08-17 스미또모 가가꾸 가부시끼가이샤 배향된 중합체막을 포함하는 이색성 게스트 호스트 편광체
GB0327093D0 (en) * 2003-11-21 2003-12-24 Koninkl Philips Electronics Nv Active matrix displays and other electronic devices having plastic substrates
KR100623694B1 (ko) * 2004-08-30 2006-09-19 삼성에스디아이 주식회사 레이저 전사용 도너 기판 및 그 기판을 사용하여 제조되는유기 전계 발광 소자의 제조 방법
US20060244373A1 (en) * 2005-04-28 2006-11-02 Semiconductor Energy Laboratory Co., Ltd. Light emitting device and method for manufacturing thereof
KR100830341B1 (ko) * 2005-09-30 2008-05-16 삼성에스디아이 주식회사 액정표시장치

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Publication number Publication date
TWI375193B (enExample) 2012-10-21
KR20080103443A (ko) 2008-11-27
JP5150138B2 (ja) 2013-02-20
US20080292786A1 (en) 2008-11-27
CN101311789A (zh) 2008-11-26
JP2008292608A (ja) 2008-12-04
TW200915250A (en) 2009-04-01

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