WO2009110042A1 - 表示装置、液晶表示装置、有機el表示装置、薄膜基板及び表示装置の製造方法 - Google Patents
表示装置、液晶表示装置、有機el表示装置、薄膜基板及び表示装置の製造方法 Download PDFInfo
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- WO2009110042A1 WO2009110042A1 PCT/JP2008/002939 JP2008002939W WO2009110042A1 WO 2009110042 A1 WO2009110042 A1 WO 2009110042A1 JP 2008002939 W JP2008002939 W JP 2008002939W WO 2009110042 A1 WO2009110042 A1 WO 2009110042A1
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- display device
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- substrate
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Images
Classifications
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B33/00—Electroluminescent light sources
- H05B33/02—Details
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/133305—Flexible substrates, e.g. plastics, organic film
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/80—Constructional details
- H10K59/87—Passivation; Containers; Encapsulations
- H10K59/871—Self-supporting sealing arrangements
- H10K59/8722—Peripheral sealing arrangements, e.g. adhesives, sealants
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/80—Manufacture or treatment specially adapted for the organic devices covered by this subclass using temporary substrates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1259—Multistep manufacturing methods
- H01L27/1262—Multistep manufacturing methods with a particular formation, treatment or coating of the substrate
- H01L27/1266—Multistep manufacturing methods with a particular formation, treatment or coating of the substrate the substrate on which the devices are formed not being the final device substrate, e.g. using a temporary substrate
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K2102/00—Constructional details relating to the organic devices covered by this subclass
- H10K2102/301—Details of OLEDs
- H10K2102/311—Flexible OLED
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/84—Passivation; Containers; Encapsulations
- H10K50/841—Self-supporting sealing arrangements
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/1201—Manufacture or treatment
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/80—Constructional details
- H10K59/87—Passivation; Containers; Encapsulations
- H10K59/871—Self-supporting sealing arrangements
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/40—Thermal treatment, e.g. annealing in the presence of a solvent vapour
- H10K71/421—Thermal treatment, e.g. annealing in the presence of a solvent vapour using coherent electromagnetic radiation, e.g. laser annealing
Definitions
- the present invention relates to a display device, a thin film substrate, and a method for manufacturing the display device.
- a technique has been devised in which a thin film device is formed on a separately prepared support substrate and transferred onto a desired substrate.
- Patent Document 1 Such a technique is disclosed in, for example, Patent Document 1.
- a first separation layer made of an amorphous silicon film containing hydrogen is formed on a first substrate in a first step, and then the first separation layer is formed in a second step.
- a thin film device layer is formed.
- the first separation layer is irradiated with laser light to transform the phase transition from the amorphous silicon film to the polysilicon film and hydrogen gas. Is generated, a peeling phenomenon is generated in the first separation layer, and the first substrate is peeled off to produce a thin film device.
- JP 2001-51296 A JP 2001-51296 A
- a display device includes a first substrate having a base layer and a display element layer provided on the base layer, and the base layer of the first substrate is a colorless and transparent resin film deposited at room temperature. It is characterized by comprising.
- a display device is provided so as to face the first substrate, and includes a base layer made of a colorless and transparent resin film, and a second display element layer provided on the base layer.
- a substrate may be further provided.
- the sacrificial film formed of a resin material having a heat resistant temperature of 150 ° C. or higher and a thermal expansion coefficient of 10 ppm / ° C. or lower corresponds to the non-display region of the display element layer. It may be formed between the layer and the base layer.
- the display element layer includes a plurality of pixel areas and a light shielding area provided so as to partition the pixel area, and the non-display area of the display element layer corresponding to the sacrificial film May be a light shielding area.
- the display element layer may include a peripheral circuit area
- the non-display area of the display element layer corresponding to the sacrificial film may be a peripheral circuit area
- the sacrificial film may be a polyimide resin.
- the colorless and transparent resin film may be a polyparaxylene resin.
- the display device according to the present invention may further include an element layer protective film between the base layer and the display element layer.
- the base layer may be formed to a thickness that governs the bending or warping of the display device.
- a liquid crystal display device includes a base layer composed of a colorless and transparent resin film deposited at room temperature, a display element layer including a TFT (thin film transistor; Thin Film Transistor) element provided on the base layer, And a CF (color filter) substrate having a base layer and a display element layer provided with a color filter provided on the base layer, opposite to the TFT substrate through a liquid crystal material. It is characterized by that.
- a bottom emission type organic EL (electroluminescence) display device includes a base layer composed of a colorless and transparent resin film deposited at room temperature, a first electrode provided on the base layer, and a first electrode. An organic EL layer provided on the electrode and a second electrode provided on the organic EL layer are provided.
- the bottom emission type organic EL display device may further include a sealing film provided on the second electrode and configured by a laminate of a resin film and an inorganic film.
- the thin film substrate according to the present invention includes a base layer made of a colorless and transparent resin film deposited at room temperature, and a display element layer provided on the base layer.
- the manufacturing method of the display device includes a first step of preparing a support substrate provided with a sacrificial film formed of a resin material having a heat resistant temperature of 150 ° C. or higher and a thermal expansion coefficient of 10 ppm / ° C. or lower; A second step of forming an element layer protective film on the sacrificial film; a third step of forming a display element layer on the element layer protective film; a fourth step of removing the support substrate from the sacrificial film; and an element layer protective film And a sixth step of forming a base layer by depositing a colorless and transparent resin film at room temperature on the protective film from which the sacrificial film has been removed. .
- the method for manufacturing a display device after forming two support substrates on which the display element layers are formed by repeating the first to third steps, these are bonded substrates with the display element layers facing each other.
- the base layer may be formed by depositing a colorless and transparent resin film at room temperature on the element layer protective film from which the sacrificial film has been removed.
- the sacrificial film corresponding to the non-display area of the display element layer may be left and the sacrificial film corresponding to the other area may be removed.
- the display element layer includes a plurality of pixel regions and a light-shielding region provided so as to partition the pixel region, and the display element layer is not left as a sacrificial film.
- the display area may be a light shielding area.
- the display element layer may include a peripheral circuit area
- the non-display area of the display element layer leaving the sacrificial film may be a peripheral circuit area
- the sacrificial film may be removed by plasma etching in the fifth step.
- the sacrificial film may be removed by microwave plasma etching in the fifth step.
- the sacrificial film may be a polyimide resin.
- the colorless and transparent resin film may be a paraxylene resin.
- the support substrate in the fourth step, may be removed from the sacrificial film by laser beam irradiation.
- FIG. 1 is a plan view of a liquid crystal display device according to Embodiment 1.
- FIG. 1 is a cross-sectional view of a liquid crystal display device according to Embodiment 1.
- FIG. It is sectional drawing of the glass substrate in which the element layer protective film was formed. It is sectional drawing of the glass substrate in which the TFT element and the metal wiring were formed. It is sectional drawing of the glass substrate in which the element layer protective film was formed. It is sectional drawing of the glass substrate in which the color filter layer was formed. It is sectional drawing of the glass substrate in which the counter electrode was formed. It is sectional drawing of the bonded glass substrate (bonded substrate). It is sectional drawing of the bonding board
- FIG. 6 is a cross-sectional view of a liquid crystal display device according to Embodiment 2.
- FIG. 6 is a cross-sectional view of a liquid crystal display device according to Embodiment 3.
- FIG. 6 is a cross-sectional view of an organic EL display device according to Embodiment 4.
- FIG. It is sectional drawing of the glass substrate in which the element layer protective film was formed.
- a display device according to an embodiment of the present invention will be described in detail based on the drawings.
- the present invention is not limited to the following embodiment.
- a display device a liquid crystal display device and an organic EL display device will be described as examples.
- FIG. 1 schematically shows a plan view of a liquid crystal display device 10 according to Embodiment 1 of the present invention.
- FIG. 2 is a diagram schematically showing a cross section of the liquid crystal display device 10 according to Embodiment 1 of the present invention.
- the liquid crystal display device 10 includes a display area 12 composed of, for example, a plurality of pixels arranged in a matrix, and a peripheral circuit area 11 provided around the display area 12.
- a driver unit 13 In the peripheral circuit region 11, a driver unit 13, a control unit 14, and the like are provided.
- the gate driver and source driver corresponding to the driver unit 13 can be monolithic by adopting p-Si or ⁇ -Si for the TFT element.
- the liquid crystal display device 10 has a base layer made of polyparaxylene as described later. Since it is formed of resin or the like, for example, a wide area as indicated by a dotted frame 15 in FIG. 1 has good flexibility.
- the flexible region is not limited to the region indicated by the dotted frame 15 in FIG. 1, and can be formed in a desired range by adjusting the configuration of the film substrate.
- the liquid crystal display device 10 includes a liquid crystal display panel including a TFT substrate 20, a TFT substrate 20, a liquid crystal material 19, and a CF substrate 21 disposed to face each other with a spacer (not shown), and further includes a polarization (not shown). A plate, a backlight unit, and the like are attached.
- the TFT substrate 20 includes a base layer 22 composed of a colorless and transparent resin film deposited at room temperature.
- a colorless and transparent resin film constituting the base layer 22 for example, polyparaxylene resin, acrylic resin, or the like can be used.
- the element layer protective film 23 is formed on the base layer 22.
- the element layer protective film 23 is made of, for example, SiO 2 .
- the display element layer includes a TFT element 24 formed on the element layer protective film 23, an interlayer insulating film 25 provided so as to cover the TFT element 24, and a planarizing film 26 provided on the interlayer insulating film 25.
- the metal wiring 28 penetrates the interlayer insulating film 25 and the planarizing film 26 and is electrically connected to the TFT element 24, and the alignment film 27 provided on the planarizing film 26. .
- the TFT element 24 includes a semiconductor layer in which an active region is formed, a gate oxide film, a gate electrode, and the like.
- the active region of the semiconductor layer is composed of a channel region and source and drain regions formed on the left and right sides thereof.
- the gate oxide film is formed on the channel region of the semiconductor layer.
- the gate electrode is formed on the gate oxide film.
- the metal wiring 28 electrically connected to the TFT element 24 is formed of a transparent conductor such as ITO (indium-tin oxide) or IZO (indium-zinc oxide).
- the interlayer insulating film 25 and the planarizing film 26 are formed using, for example, a TEOS film or a SiN film.
- the CF substrate 21 includes a base layer 32 made of a colorless and transparent resin film deposited at room temperature.
- a colorless and transparent resin film constituting the base layer 32 for example, a polyparaxylene resin, an acrylic resin, or the like can be used.
- an element layer protective film 33 made of an inorganic film such as SiO 2 , SiON, or SiNx for protecting the color filter layer at the time of manufacture is formed.
- a color filter layer composed of color layers 34 and 35 and a light shielding layer (black matrix) 36 is formed.
- the light shielding layer 36 is made of a metal such as Cr (chromium) or a black resin.
- the color layers 34 and 35 include three types of red (R), green (G), and blue (B), and any one color is arranged for each pixel of the liquid crystal display panel.
- One pixel is constituted by three pixels of the adjacent red pixel, green pixel, and blue pixel, and various colors can be displayed.
- the light shielding layer 36 is formed so as to partition these pixels.
- a transparent resin layer 37 and a counter electrode 38 are formed on the color filter layer.
- the transparent resin layer 37 is made of, for example, an acrylic resin.
- the counter electrode 38 is formed of a transparent conductor such as ITO or IZO, for example.
- a vertical alignment film (not shown) is formed on the counter electrode 38.
- a glass substrate 42 having a thickness of about 0.7 mm is prepared as a support substrate.
- a sacrificial film 40 made of a resin material having a heat resistant temperature of 150 ° C. or higher and a thermal expansion coefficient of 10 ppm / ° C. or lower is formed on the glass substrate 42 with a thickness of about 1 ⁇ m, for example.
- a resin material of the sacrificial film 40 satisfying such conditions for example, a polyimide resin or a fluorene epoxy resin can be used.
- the element layer protective film 23 is formed on the sacrificial film 40 with a thickness of about 500 nm using SiO 2 or the like. This element layer protective film 23 is for satisfactorily suppressing the display element layer from being etched when the sacrificial film 40 is removed.
- a metal film, a semiconductor film, a gate insulating film, and the like are formed and patterned on the element layer protective film 23 to form the TFT element 24.
- the element layer protective film 23 on which the TFT element 24 is formed for example, a TEOS film, a SiN film or the like is used to form the interlayer insulating film 25 and the planarizing film 26 with a thickness of about 1 to 2 ⁇ m. To form.
- a TEOS film, a SiN film or the like is used to form the interlayer insulating film 25 and the planarizing film 26 with a thickness of about 1 to 2 ⁇ m.
- a contact hole is provided from the surface of the planarizing film 26 to the TFT element 24, and a metal wiring 28 electrically connected to the TFT element 24 is formed. Further, a transparent conductive film such as an ITO film is formed and patterned on the surface of the planarizing film 26, and a pixel electrode (not shown) is also formed for each pixel.
- a transparent conductive film such as an ITO film is formed and patterned on the surface of the planarizing film 26, and a pixel electrode (not shown) is also formed for each pixel.
- an alignment film 27 is formed on the planarizing film 26 using a transparent resin.
- a glass substrate 43 having a thickness of, for example, about 0.7 mm is prepared as a support substrate.
- a sacrificial film 41 made of a resin material having a heat resistant temperature of 150 ° C. or higher and a thermal expansion coefficient of 10 ppm / ° C. or lower is formed on the glass substrate 43 with a thickness of about 1 ⁇ m, for example.
- a resin material of the sacrificial film 41 satisfying such conditions for example, a polyimide resin or a fluorene epoxy resin can be used.
- the element layer protective film 33 is formed on the sacrificial film 41 with a thickness of about 500 nm using SiO 2 , SiON, SiNx, or the like.
- the element layer protective film 33 is for satisfactorily suppressing the etching of the color filter layer when the sacrificial film 41 is removed.
- a light shielding layer 36 is formed on a predetermined region of the element layer protective film 33 with a metal such as Cr or a black resin.
- red, green and blue color layers 34 and 35 are formed on the element layer protective film 33 using a red photosensitive resin, a green photosensitive resin and a blue photosensitive resin.
- a transparent resin layer 37 having a thickness of, for example, about 1 to 3 ⁇ m is formed on the color filter layer composed of the color layers 34 and 35 using SiO 2 or the like.
- the substrate in FIG. 4 and the substrate in FIG. 7 are bonded to each other with their element sides facing each other.
- an opening is provided and bonded to each other with a frame-shaped sealing material, and then the liquid crystal material is injected between both substrates using the opening of the sealing material as a liquid crystal injection port.
- the glass substrates 42 and 43 are peeled from the bonded substrate as shown in FIG. 10 by irradiating laser light (arrows in FIG. 9) from the glass substrates 42 and 43 side.
- the removal of the glass substrates 42 and 43 may not be peeling by laser light irradiation.
- the glass substrates 42 and 43 may be removed using a polishing apparatus.
- the sacrificial films 40 and 41 exposed by removing the glass substrates 42 and 43 are removed by plasma etching, respectively.
- the removal of the sacrificial films 40 and 41 is not limited to plasma etching, and may be performed by, for example, microwave plasma etching.
- the base layers 22 and 32 made of a colorless and transparent resin film as shown in FIG. It is formed with a thickness of about 10 ⁇ m.
- the base layers 22 and 32 are formed by using, for example, paraxylene-based resin by CVD (chemical vapor deposition) at room temperature (for example, 50 ° C. or less).
- a polarizing plate and a backlight unit are provided on the TFT substrate 20 side, and the liquid crystal display device 10 is completed.
- the first substrate is peeled off. Since it is difficult to completely eliminate the property and there is a possibility that peeling failure may occur, it is difficult to manufacture a device particularly on a large substrate, and it is also difficult to manufacture a very thin device.
- the liquid crystal display device 10 according to Embodiment 1 of the present invention uses a colorless and transparent resin film as the base layers 22 and 32, it has good visibility and flexibility. Further, since the base layers 22 and 32 are deposited at room temperature, high temperature heat is not applied to the display element layer when the base layers 22 and 32 are formed on the display element layer. Therefore, the display characteristics of the device are improved.
- the entire display device is more flexible and has better display characteristics.
- a colorless and transparent resin film used for the base layers 22 and 32 is formed of a polyparaxylene resin or the like.
- a polyimide film (3.5 ⁇ m thickness), which is a typical resin conventionally used as a base layer, and changes with the wavelength (nm) at that time.
- permeability (%) of the obtained light is shown.
- light is transmitted through the polyparaxylene resin (polyparaxylene film (10 ⁇ m thickness)) used for the base layers 22 and 32 according to the present embodiment, and the wavelength (nm) at that time is set.
- permeability (%) of the light which changed with it is shown. From the graph of FIG. 11, the substrate layer using polyimide has a sharply deteriorated transmittance when the wavelength is 500 nm or less, and the transmitted light is colored. On the other hand, as can be seen from the graph of FIG. 12, the base layers 22 and 32 using polyparaxylene stably show a transmittance of about 90% even when the wavelength changes. For this reason, the liquid crystal display device 10 using such base layers 22 and 32 has very good display visibility.
- the base layers 22 and 32 of the TFT substrate 61 and the CF substrate 21 are formed of paraxylene resin or the like after the step of applying heat, a polyimide film or the like that has undergone the step of applying heat. Unlike the base layer formed in (1), a specific warp does not occur, the flexibility is further improved, and a complete scroll can be obtained. For this reason, the apparatus can be stored and moved in a safe and space-saving manner, and there are advantages in terms of manufacturing efficiency and manufacturing cost.
- the manufacturing method of the liquid crystal display device 10 is as follows. First, a sacrificial film 40 formed of a resin material having a heat resistant temperature of 150 ° C. or higher and a thermal expansion coefficient of 10 ppm / ° C. or lower on a support substrate (glass substrates 42 and 43). 41 (polyimide resin) is provided. For this reason, even if the heating in the formation process of the display element layer is applied, the good bonding state between the sacrificial films 40 and 41 and the support substrate can be maintained.
- the sacrificial films 40 and 41 are removed to the display element layer when the sacrificial films 40 and 41 are removed by etching or the like. Can be suppressed satisfactorily. Furthermore, since the support substrate is peeled off from the sacrificial films 40 and 41 by laser light irradiation, the support substrate can be easily and completely peeled off. Further, since the base layers 22 and 32 are formed on the element layer protective films 23 and 33 from which the sacrificial films 40 and 41 have been removed by depositing polyparaxylene resin at room temperature, high temperature heat is applied to the display elements. The display characteristics of the device are good. Furthermore, since the base layers 22 and 32 are formed by vapor deposition after the sacrificial films 40 and 41 are securely removed, an extremely thin flexible device can be manufactured even with a large substrate.
- the sacrificial films 40 and 41 when the sacrificial films 40 and 41 are removed by plasma etching, the sacrificial films 40 and 41 can be easily removed, and the manufacturing efficiency is improved. Further, when the sacrificial films 40 and 41 are removed by microwave plasma etching, the sacrificial films 40 and 41 can be removed at a low temperature, so that the display element is not affected by heat. Therefore, the display characteristics of the device are better.
- Embodiment 2 Next, a liquid crystal display device 50 according to Embodiment 2 of the present invention will be described.
- the same components as those of the liquid crystal display device 10 are denoted by the same reference numerals, and the description thereof is omitted.
- FIG. 13 schematically shows a cross-sectional view of the liquid crystal display device 50.
- the liquid crystal display device 50 is different from the liquid crystal display device 10 shown in the first embodiment in that only the regions corresponding to the light shielding layers 36 of the base layers 22 and 32, that is, the non-display regions are replaced with the sacrificial films 40 and 41. Only the point is different.
- the sacrificial films 40 and 41 are not completely removed, and only the region corresponding to the light shielding layer 36 (light shielding region) of the CF substrate 21 that partitions a plurality of pixel regions is left. .
- the base layers 22 and 32 are formed in the region where the sacrificial films 40 and 41 are removed.
- the sacrificial films 40 and 41 are present, the withstand pressure strength and the like are better than that of the base layers 22 and 32 on the entire surface of the element layer protective films 23 and 33. It becomes. Further, even if a colored resin film is used as the sacrificial films 40 and 41, it can be prevented from adversely affecting the display by being formed only on the light shielding layer 36.
- FIG. 14 is a diagram schematically showing a cross section of the liquid crystal display device 60.
- the liquid crystal display device 60 includes a TFT substrate 61 and a CF substrate 62.
- Base layers 63 and 64 having the same configuration as the base layers 22 and 32 of the liquid crystal display devices 10 and 50 are formed on the surfaces of the TFT substrate 61 and the CF substrate 62.
- sacrificial films 65 and 66 are formed in place of the base layers 63 and 64 in a region (peripheral circuit region) corresponding to the periphery of the TFT substrate 61 and the CF substrate 62 which are non-display regions.
- the peripheral circuit can be formed more stably. Further, even if a colored resin film is used as the sacrificial films 65 and 66, it can be prevented from adversely affecting the display because it is formed only in the peripheral circuit region.
- FIG. 14 shows a configuration in which the peripheral circuit region is provided on each of the TFT substrate 61 and the CF substrate 62.
- the present invention is not limited to this, and the peripheral circuit region is provided only on the TFT substrate 61 side. Corresponding to this, it may be provided only on the TFT substrate 61 side.
- FIG. 15 is a diagram schematically showing a cross section of an organic EL display device 70 according to Embodiment 4 of the present invention.
- the organic EL display device 70 includes a base layer 71 made of a colorless and transparent resin film deposited at room temperature.
- a colorless and transparent resin film for example, paraxylene resin or acrylic resin can be used.
- the element layer protective film 72 is formed on the base layer 71.
- the element layer protective film 72 is made of, for example, SiO 2 .
- a display element layer including a TFT element 74 and the like is formed on the element layer protective film 72.
- the display element layer penetrates through the TFT element 74 formed on the element layer protective film 72, the interlayer insulating film 75 such as a TEOS film or SiN film provided so as to cover the TFT element 74, and the interlayer insulating film 75.
- a metal wiring electrically connected to the TFT element 74 The metal wiring further extends on the interlayer insulating film 75 to form the first electrode 77.
- An insulating film 76 such as a TEOS film or a SiN film is further formed on the interlayer insulating film 75.
- the TFT element 74 includes a semiconductor layer in which an active region is formed, a gate oxide film, a gate electrode, and the like.
- the active region of the semiconductor layer is composed of a channel region and source and drain regions formed on the left and right sides thereof.
- the gate oxide film is formed on the channel region of the semiconductor layer.
- the gate electrode is formed on the gate oxide film.
- the organic EL display device 70 is a bottom emission type in which light emission is extracted from the first electrode 77 side
- the first electrode 77 has a high work such as ITO or SnO 2 from the viewpoint of improving the light extraction efficiency. It is preferable to use a thin film of a material having a function and high light transmittance.
- the organic EL layer 78 is formed on the first electrode 77.
- the organic EL layer 78 includes a hole transport layer and a light emitting layer.
- the hole transport layer is not limited as long as the hole injection efficiency is good.
- organic materials such as a triphenylamine inducer, a polyparaphenylene vinylene (PPV) inducer, and a polyfluorene derivative can be used.
- the light emitting layer is not particularly limited, and for example, 8-hydroxyquinolol inducer, thiazole inducer, benzoxazole inducer and the like can be used. Moreover, you may combine 2 or more types among these materials, and may combine additives, such as dopant material.
- the organic EL layer 78 has a two-layer structure of a hole transport layer and a light emitting layer, but is not limited to this configuration. That is, the organic EL layer 78 may have a single-layer structure composed of only the light emitting layer. Further, the organic EL layer 78 may be configured by one or more of a hole transport layer, a hole injection layer, an electron injection layer, and an electron transport layer, and a light emitting layer.
- the second electrode 79 is formed on the organic EL layer 78 and the insulating film 76.
- the second electrode 79 has a function of injecting electrons into the organic EL layer 78.
- the second electrode 79 can be formed of a thin film such as Mg, Li, Ca, Ag, Al, In, Ce, or Cu, but is not limited thereto.
- the first electrode 77 has a function of injecting holes into the organic EL layer 78
- the second electrode 79 has a function of injecting electrons into the organic EL layer 78.
- the holes and electrons injected from the first electrode 77 and the second electrode 79 are recombined in the organic EL layer 78, whereby the organic EL layer 78 emits light.
- the base layer 71 and the first electrode 77 are configured to be light transmissive
- the second electrode 79 is configured to be light reflective. Light emission is transmitted through the first electrode 77 and the base layer 71 and extracted from the organic EL layer 78. (Bottom emission method).
- a planarizing film 80 such as a TEOS film or a SiN film is formed.
- a sealing film 81 composed of a laminate of resin films 82, 84, 86 and inorganic films 83, 85 is formed.
- the resin films 82, 84, and 86 may be formed using the same resin material as that of the base layer 71, or may be formed using other resin materials.
- the inorganic films 83 and 85 are formed using, for example, SiNx, SiO 2 or Al 2 O 3 .
- the sealing film 81 may not be formed by stacking the resin film and the inorganic film in layers as described above, and may be formed by one layer each. Furthermore, the sealing film 81 may be configured using a metal thin film.
- a glass substrate 91 having a thickness of about 0.7 mm is prepared as a support substrate.
- a sacrificial film 90 made of a resin material having a heat resistant temperature of 400 ° C. or lower and a thermal expansion coefficient of 10 ppm / ° C. or lower is formed on the glass substrate 91 with a thickness of about 1 ⁇ m, for example.
- a resin material of the sacrificial film 90 that satisfies such conditions for example, a polyimide resin or a fluorene epoxy resin can be used.
- the element layer protective film 72 is formed on the sacrificial film 90 with a thickness of about 500 nm using SiO 2 or the like. This element layer protective film 72 is for satisfactorily suppressing the etching of the display element layer when the sacrificial film 90 is removed.
- a TFT element 74 is formed on the element layer protective film 72 by forming and patterning a metal film or a semiconductor film.
- an interlayer insulating film 75 is formed on the element layer protective film 72 on which the TFT element 74 is formed using, for example, a TEOS film, a SiN film, or the like so as to have a thickness of about 1 to 2 ⁇ m.
- a contact hole is provided from the surface of the interlayer insulating film 75 to the TFT element 74, a metal wiring electrically connected to the TFT element 74 is formed by a transparent conductive material such as ITO, and further, for example, about 150 nm by patterning or the like.
- a first electrode 77 having a thickness is formed.
- an insulating film 76 having a thickness of, for example, about 500 nm is formed on the interlayer insulating film 75, a portion corresponding to the first electrode 77 is removed by etching.
- an organic EL layer 78 is provided by forming a hole transport layer and a light emitting layer on the first electrode 77.
- a hole transport material paint in which an organic polymer material that is a hole transport material is dissolved or dispersed in a solvent is supplied onto the first electrode 77 exposed by, for example, an ink jet method. Then, a hole transport layer is formed by performing a baking treatment.
- an organic light-emitting material paint in which an organic polymer material that is a light-emitting material is dissolved or dispersed in a solvent is supplied so as to cover the hole transport layer by, for example, an inkjet method. Then, a light emitting layer is formed by performing a baking process.
- the second electrode 79 is formed on the insulating film 76 and the organic EL layer 78 by sputtering or the like using Mg, Li, Ca, Ag, Al, In, Ce, Cu, or the like.
- the thickness of the second electrode 79 is about 150 nm, for example.
- a planarizing film 80 is formed by forming a TEOS film, a SiN film, or the like on the second electrode 79 and polishing the surface by chemical mechanical polishing (CMP) or the like.
- CMP chemical mechanical polishing
- a sealing film 81 is formed by depositing a resin film 82, an inorganic film 83, a resin film 84, an inorganic film 85, and a resin film 86 in this order on the planarizing film 80.
- the resin films 82, 84, and 86 are formed using, for example, paraxylene-based resin or the like so as to have a thickness of about 10 ⁇ m.
- the inorganic films 83 and 85 are formed using SiNx, SiO 2 , Al 2 O 3 or the like so as to have a thickness of about 500 nm, respectively.
- the glass substrate 91 is peeled off by irradiating laser light (arrows in FIG. 19) from the glass substrate 91 side.
- the removal of the glass substrate 91 may not be peeling by laser light irradiation.
- the glass substrate 91 may be removed using a polishing and etching apparatus.
- the sacrificial film 90 exposed by removing the glass substrate 91 is removed by plasma etching.
- the removal of the sacrificial film 90 is not limited to plasma etching, and may be performed by, for example, microwave plasma etching.
- a base layer 71 made of a colorless and transparent resin film as shown in FIG. 15 is formed on the element layer protective film 72 exposed by removing the sacrificial film 90 with a thickness of about 10 ⁇ m, for example.
- the base layer 71 is formed by, for example, CVD (chemical vapor deposition) at room temperature (for example, 50 ° C. or lower) using a polyparaxylene resin.
- CVD chemical vapor deposition
- FIG. 20 is a diagram schematically showing a cross section of the organic EL display device 100.
- the organic EL display device 100 is different from the organic EL display device 70 shown in Embodiment 4 in that a base layer 71 that is the thickest of the constituent layers of the device shown in FIG. Is different.
- FIG. 21 is a diagram schematically showing a cross section of the organic EL display device 110.
- the organic EL display device 110 is different from the organic EL display device 100 in that a base layer 71 having the maximum thickness among the constituent layers of the device is provided only in the lowermost layer.
- FIG. 22 is a diagram schematically showing a cross section of the organic EL display device 120.
- the organic EL display device 110 is different from the organic EL display device 100 in that a base layer 71 having the maximum thickness among the constituent layers of the device is provided only in the uppermost layer.
- the organic EL display devices 100, 110, and 120 are governed by the base layer 71 that is the thickest of the constituent layers of the device, such as bending, warping, and rounding. . Therefore, it is possible to satisfactorily suppress warping or bending of the device itself formed in the apparatus, and the quality of the display device is further improved.
- the configuration in which the base layer is made thickest to control the degree of bending or warping of the device is not limited to the organic EL display device, and may be used for the liquid crystal display device shown in the embodiment of the present invention.
- the organic EL display device 70 according to Embodiment 4 of the present invention uses a colorless and transparent resin film as the base layer 71, it has good visibility and flexibility. Further, since the base layer 71 is deposited at room temperature, high temperature heat is not applied to the display element layer when the base layer 71 is formed on the display element layer. Therefore, the display characteristics of the device are improved.
- the organic EL display device 70 also includes the base layer 71 in the sealing film 81, the entire display device has better flexibility and display characteristics.
- the colorless and transparent resin film used for the base layer 71 is formed of para-xylene resin or the like, display visibility is very good.
- the base layer 71 is made of polyparaxylene-based resin or the like, unlike a base layer formed of a general polyimide film or the like, no specific warpage occurs and the flexibility is further improved. And can be made into a complete scroll. For this reason, the apparatus can be stored and moved in a safe and space-saving manner, and there are advantages in terms of manufacturing efficiency and manufacturing cost.
- the organic EL display device 70 is manufactured by a sacrificial film 90 (polyimide) formed on a support substrate (glass substrate 91) with a resin material having a heat resistant temperature of 150 ° C. or higher and a thermal expansion coefficient of 10 ppm / ° C. or lower. System resin). For this reason, even if heating or the like in the process of forming the display element layer is applied, a good bonding state between the sacrificial film 90 and the support substrate can be maintained.
- the element layer protective film 72 is formed on the sacrificial film 90 before forming the display element layer, it is preferable that the display element layer is removed when the sacrificial film 90 is removed by etching or the like. Can be suppressed.
- the support substrate is peeled off from the sacrificial film 90 by laser light irradiation, the support substrate can be easily and completely peeled off.
- the base layer 71 is formed by depositing paraxylene-based resin or the like at room temperature on the element layer protective film 72 from which the sacrificial film 90 has been removed, the display element is not subjected to high-temperature heat, and the display characteristics of the device Becomes better.
- the base layer 71 is formed by vapor deposition after the sacrificial film 90 is securely removed, an ultrathin flexible device can be manufactured even with a large substrate.
- the sacrificial film 90 can be easily removed, and the manufacturing efficiency is improved. Further, when the sacrificial film 90 is removed by microwave plasma etching, the sacrificial film 90 can be removed at a low temperature, so that the display element is not affected by heat. Therefore, the display characteristics of the device are better.
- the display device is related to LCD (liquid crystal display) and organic EL (organic electroluminescence), but electrophoresis (electrophoretic), PD (plasma display); Plasma display), PALC (plasma addressed liquid crystal display), inorganic EL (inorganic electroluminescence), FED (field emission display), or SED (surface-conduction electron-emitter display) It may be a display device related to an electric field display.
- the present invention is useful for a display device, a thin film substrate, and a method for manufacturing a display device.
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Abstract
Description
(液晶表示装置10の構成)
図1は、本発明の実施形態1に係る液晶表示装置10の平面図を模式的に示したものである。図2は、本発明の実施形態1に係る液晶表示装置10の断面を模式的に示した図である。
次に、本発明の実施形態に係る液晶表示装置10の製造方法について説明する。尚、以下に示す製造方法は単なる例示であり、本発明に係る液晶表示装置10は以下に示す方法により製造されたものに限定されるものではない。
次に、本発明の実施形態1の作用効果について説明する。
次に、本発明の実施形態2に係る液晶表示装置50について説明する。液晶表示装置50において、上記液晶表示装置10と同様の構成要素は同符号を付し、その説明を省略する。
次に、本発明の実施形態3に係る液晶表示装置60について説明する。図14は、液晶表示装置60の断面を模式的に示した図である。液晶表示装置60は、TFT基板61とCF基板62とで構成されている。TFT基板61とCF基板62との表面には、液晶表示装置10、50の基体層22,32と同様の構成の基体層63,64が形成されている。液晶表示装置60は、非表示領域であるTFT基板61及びCF基板62の周辺に対応する領域(周辺回路領域)に基体層63,64に換わって犠牲膜65,66が形成されている。
(有機EL表示装置70の構成)
図15は、本発明の実施形態4に係る有機EL表示装置70の断面を模式的に示した図である。
次に、本発明の実施形態に係る有機EL表示装置70の製造方法について説明する。尚、以下に示す製造方法は単なる例示であり、本発明に係る有機EL表示装置70は以下に示す方法により製造されたものに限定されるものではない。
図20~22は、本発明の実施形態5を示す。
次に、本発明の実施形態4の作用効果について説明する。
Claims (23)
- 基体層と、該基体層上に設けられた表示素子層と、を有する第1基板を備え、
上記第1基板の基体層は、室温で蒸着された無色透明の樹脂膜で構成された表示装置。 - 請求項1に記載された表示装置において、
上記第1基板に対向するように設けられ、無色透明の樹脂膜で構成された基体層と、該基体層上に設けられた表示素子層と、を有する第2基板をさらに備えた表示装置。 - 請求項1に記載された表示装置において、
耐熱温度が150℃以上で、熱膨張係数が10ppm/℃以下の樹脂材料で形成された犠牲膜が、上記表示素子層の非表示領域に対応して該表示素子層と上記基体層との間に形成された表示装置。 - 請求項3に記載された表示装置において、
上記表示素子層は、複数の画素領域と、該画素領域を区画するように設けられた遮光領域と、を備え、
上記犠牲膜が対応する上記表示素子層の非表示領域は、上記遮光領域である表示装置。 - 請求項3に記載された表示装置において、
上記表示素子層は、周辺回路領域を備え、
上記犠牲膜が対応する上記表示素子層の非表示領域は、上記周辺回路領域である表示装置。 - 請求項3に記載された表示装置において、
上記犠牲膜は、ポリイミド系樹脂である表示装置。 - 請求項1に記載された表示装置において、
上記無色透明の樹脂膜は、ポリパラキシレン系樹脂である表示装置。 - 請求項1に記載された表示装置において、
上記基体層と上記表示素子層との間に、素子層保護膜をさらに備えた表示装置。 - 請求項1に記載された表示装置において、
上記基体層は、上記表示装置の曲がり又は反りを支配する厚さに形成された表示装置。 - 室温で蒸着された無色透明の樹脂膜で構成された基体層と、該基体層上に設けられたTFT素子を備える表示素子層と、を有するTFT基板と、
上記TFT基板と液晶材料を介して対向すると共に、室温で蒸着された無色透明の樹脂膜で構成された基体層と、該基体層上に設けられたカラーフィルタを備える表示素子層と、を有するCF基板と、
を備えた液晶表示装置。 - 室温で蒸着された無色透明の樹脂膜で構成された基体層と、
上記基体層上に設けられた第1電極と、
上記第1電極上に設けられた有機EL層と、
上記有機EL層上に設けられた第2電極と、
を備えたボトムエミッション型の有機EL表示装置。 - 請求項11に記載された有機EL表示装置において、
上記第2電極上に設けられ、上記樹脂膜及び無機膜の積層体により構成された封止膜をさらに備えた有機EL表示装置。 - 室温で蒸着された無色透明の樹脂膜で構成された基体層と、該基体層上に設けられた表示素子層と、を備えた薄膜基板。
- 耐熱温度が150℃以上で、熱膨張係数が10ppm/℃以下の樹脂材料で形成された犠牲膜が設けられた支持基板を準備する第1ステップと、
上記犠牲膜上に素子層保護膜を形成する第2ステップと、
上記素子層保護膜上に表示素子層を形成する第3ステップと、
上記犠牲膜から上記支持基板を除去する第4ステップと、
上記素子層保護膜から上記犠牲膜を除去する第5ステップと、
上記犠牲膜を除去した素子層保護膜上に室温で無色透明の樹脂膜を蒸着することにより基体層を形成する第6ステップと、
を備えた表示装置の製造方法。 - 請求項14に記載された表示装置の製造方法において、
上記第1から第3ステップを繰り返すことによって上記表示素子層を形成した上記支持基板を二つ形成した後、これらを該表示素子層を対向させて貼り合わせ基板を形成する貼り合わせ基板形成ステップをさらに備え、
上記第4ステップでは上記貼り合わせ基板の上記犠牲膜から上記支持基板をそれぞれ除去し、
上記第5ステップでは上記貼り合わせ基板の上記素子層保護膜から上記犠牲膜をそれぞれ除去し、
上記第6ステップでは上記犠牲膜を除去した保護膜上に室温で無色透明の樹脂膜を蒸着することにより基体層をそれぞれ形成する表示装置の製造方法。 - 請求項14に記載された表示装置の製造方法において、
上記第5ステップで、上記表示素子層の非表示領域に対応する上記犠牲膜を残し、それ以外の領域に対応する該犠牲膜を除去する表示装置の製造方法。 - 請求項16に記載された表示装置の製造方法において、
上記表示素子層は、複数の画素領域と、該画素領域を区画するように設けられた遮光領域と、を備え、
上記犠牲膜を残す上記表示素子層の非表示領域は、上記遮光領域である表示装置の製造方法。 - 請求項16に記載された表示装置の製造方法において、
上記表示素子層は、周辺回路領域を備え、
上記犠牲膜を残す上記表示素子層の非表示領域は、上記周辺回路領域である表示装置の製造方法。 - 請求項14に記載された表示装置の製造方法において、
上記第5ステップで、上記犠牲膜の除去をプラズマエッチングにより行う表示装置の製造方法。 - 請求項14に記載された表示装置の製造方法において、
上記第5ステップで、上記犠牲膜の除去をマイクロ波プラズマエッチングにより行う表示装置の製造方法。 - 請求項14に記載された表示装置の製造方法において、
上記犠牲膜は、ポリイミド系樹脂である表示装置の製造方法。 - 請求項14に記載された表示装置の製造方法において、
上記無色透明の樹脂膜は、ポリパラキシレン系樹脂である表示装置の製造方法。 - 請求項14に記載された表示装置の製造方法において、
上記第4ステップで、上記犠牲膜から上記支持基板をレーザ光照射により剥離させて除去する表示装置の製造方法。
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US12/746,072 US20100283056A1 (en) | 2008-03-06 | 2008-10-16 | Display apparatus, liquid crystal display apparatus, organic el display apparatus, thin-film substrate, and method for manufacturing display apparatus |
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JP2014235294A (ja) * | 2013-05-31 | 2014-12-15 | 株式会社ジャパンディスプレイ | 表示装置及びその製造方法 |
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JP5674707B2 (ja) * | 2012-05-22 | 2015-02-25 | 株式会社東芝 | 表示装置 |
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TWI596751B (zh) * | 2012-08-30 | 2017-08-21 | 財團法人工業技術研究院 | 軟性顯示器與其製法 |
JP6182909B2 (ja) * | 2013-03-05 | 2017-08-23 | 株式会社リコー | 有機el発光装置の製造方法 |
WO2015000095A1 (en) | 2013-07-05 | 2015-01-08 | Industrial Technology Research Institute | Flexible display and method for fabricating the same |
KR102092707B1 (ko) * | 2013-09-17 | 2020-03-25 | 삼성디스플레이 주식회사 | 플렉서블 디스플레이 장치와, 이의 제조 방법 |
CN103760719B (zh) * | 2014-01-15 | 2017-03-15 | 北京京东方光电科技有限公司 | 一种显示基板及显示装置 |
JP6486848B2 (ja) * | 2016-02-25 | 2019-03-20 | 株式会社ジャパンディスプレイ | 表示装置およびその製造方法 |
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WO2019003417A1 (ja) * | 2017-06-30 | 2019-01-03 | シャープ株式会社 | 可撓性表示装置及び可撓性表示装置の製造方法 |
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