TWI375193B - - Google Patents
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- Publication number
- TWI375193B TWI375193B TW097118732A TW97118732A TWI375193B TW I375193 B TWI375193 B TW I375193B TW 097118732 A TW097118732 A TW 097118732A TW 97118732 A TW97118732 A TW 97118732A TW I375193 B TWI375193 B TW I375193B
- Authority
- TW
- Taiwan
- Prior art keywords
- material layer
- resin material
- display device
- substrate
- resin
- Prior art date
Links
- 239000000758 substrate Substances 0.000 claims description 126
- 239000000463 material Substances 0.000 claims description 119
- 239000011347 resin Substances 0.000 claims description 106
- 229920005989 resin Polymers 0.000 claims description 106
- 239000010408 film Substances 0.000 claims description 75
- 238000004519 manufacturing process Methods 0.000 claims description 58
- 239000011521 glass Substances 0.000 claims description 52
- 239000010409 thin film Substances 0.000 claims description 23
- 230000004888 barrier function Effects 0.000 claims description 11
- 239000002648 laminated material Substances 0.000 claims description 9
- 238000000034 method Methods 0.000 claims description 8
- 238000002834 transmittance Methods 0.000 claims description 7
- 125000005462 imide group Chemical group 0.000 claims description 6
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 claims description 5
- 230000001678 irradiating effect Effects 0.000 claims description 5
- 229910052707 ruthenium Inorganic materials 0.000 claims description 5
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 claims description 5
- 229910002616 GeOx Inorganic materials 0.000 claims description 4
- 229910015711 MoOx Inorganic materials 0.000 claims description 4
- 239000011368 organic material Substances 0.000 claims description 4
- 229910000577 Silicon-germanium Inorganic materials 0.000 claims description 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 3
- 229910052760 oxygen Inorganic materials 0.000 claims description 3
- 239000001301 oxygen Substances 0.000 claims description 3
- 229910001925 ruthenium oxide Inorganic materials 0.000 claims description 3
- WOCIAKWEIIZHES-UHFFFAOYSA-N ruthenium(iv) oxide Chemical compound O=[Ru]=O WOCIAKWEIIZHES-UHFFFAOYSA-N 0.000 claims description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 3
- 239000012528 membrane Substances 0.000 claims description 2
- 239000010410 layer Substances 0.000 description 127
- 239000004973 liquid crystal related substance Substances 0.000 description 36
- 102100036464 Activated RNA polymerase II transcriptional coactivator p15 Human genes 0.000 description 31
- 101000713904 Homo sapiens Activated RNA polymerase II transcriptional coactivator p15 Proteins 0.000 description 31
- 229910004444 SUB1 Inorganic materials 0.000 description 31
- 229910004438 SUB2 Inorganic materials 0.000 description 20
- 101100311330 Schizosaccharomyces pombe (strain 972 / ATCC 24843) uap56 gene Proteins 0.000 description 20
- 101150018444 sub2 gene Proteins 0.000 description 20
- 239000004065 semiconductor Substances 0.000 description 12
- 238000005401 electroluminescence Methods 0.000 description 11
- 239000011159 matrix material Substances 0.000 description 9
- 230000005684 electric field Effects 0.000 description 8
- 230000001681 protective effect Effects 0.000 description 8
- 230000015572 biosynthetic process Effects 0.000 description 7
- 239000002985 plastic film Substances 0.000 description 6
- 229920006255 plastic film Polymers 0.000 description 6
- 229910004205 SiNX Inorganic materials 0.000 description 4
- 239000003990 capacitor Substances 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 229910000449 hafnium oxide Inorganic materials 0.000 description 3
- WIHZLLGSGQNAGK-UHFFFAOYSA-N hafnium(4+);oxygen(2-) Chemical compound [O-2].[O-2].[Hf+4] WIHZLLGSGQNAGK-UHFFFAOYSA-N 0.000 description 3
- 239000004642 Polyimide Substances 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- 125000003118 aryl group Chemical group 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 229920001721 polyimide Polymers 0.000 description 2
- 239000004576 sand Substances 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 230000003068 static effect Effects 0.000 description 2
- 101150046160 POL1 gene Proteins 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 101100388071 Thermococcus sp. (strain GE8) pol gene Proteins 0.000 description 1
- 101100117436 Thermus aquaticus polA gene Proteins 0.000 description 1
- 238000002679 ablation Methods 0.000 description 1
- 239000012790 adhesive layer Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 230000008602 contraction Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 239000004744 fabric Substances 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- OSDXSOSJRPQCHJ-XVNBXDOJSA-N methyl 3-(3,4-dihydroxyphenyl)-3-[(E)-3-(3,4-dihydroxyphenyl)prop-2-enoyl]oxypropanoate Chemical compound C=1C=C(O)C(O)=CC=1C(CC(=O)OC)OC(=O)\C=C\C1=CC=C(O)C(O)=C1 OSDXSOSJRPQCHJ-XVNBXDOJSA-N 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 239000002861 polymer material Substances 0.000 description 1
- 230000002787 reinforcement Effects 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 238000013316 zoning Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
- H10D86/01—Manufacture or treatment
- H10D86/021—Manufacture or treatment of multiple TFTs
- H10D86/0214—Manufacture or treatment of multiple TFTs using temporary substrates
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/133305—Flexible substrates, e.g. plastics, organic film
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
- H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
- H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
- H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/1368—Active matrix addressed cells in which the switching element is a three-electrode device
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Nonlinear Science (AREA)
- General Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Power Engineering (AREA)
- Mathematical Physics (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Optics & Photonics (AREA)
- Liquid Crystal (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2007136139A JP5150138B2 (ja) | 2007-05-23 | 2007-05-23 | 表示装置の製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW200915250A TW200915250A (en) | 2009-04-01 |
| TWI375193B true TWI375193B (enExample) | 2012-10-21 |
Family
ID=40072654
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW097118732A TW200915250A (en) | 2007-05-23 | 2008-05-21 | Method of manufacturing display device |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US20080292786A1 (enExample) |
| JP (1) | JP5150138B2 (enExample) |
| KR (1) | KR100994870B1 (enExample) |
| CN (1) | CN101311789A (enExample) |
| TW (1) | TW200915250A (enExample) |
Families Citing this family (21)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2010032768A (ja) | 2008-07-29 | 2010-02-12 | Hitachi Displays Ltd | 表示装置およびその製造方法 |
| JP2011227369A (ja) | 2010-04-22 | 2011-11-10 | Hitachi Displays Ltd | 画像表示装置及びその製造方法 |
| US9142797B2 (en) | 2010-05-31 | 2015-09-22 | Industrial Technology Research Institute | Gas barrier substrate and organic electro-luminescent device |
| US20110291544A1 (en) * | 2010-05-31 | 2011-12-01 | Industrial Technology Research Institute | Gas barrier substrate, package of organic electro-luminenscent device and packaging method thereof |
| CN101980393A (zh) * | 2010-09-21 | 2011-02-23 | 福建钧石能源有限公司 | 大面积柔性光电器件的制造方法 |
| KR101295705B1 (ko) * | 2011-04-25 | 2013-08-16 | 도레이첨단소재 주식회사 | 투명 플라스틱기판용 페녹시수지 조성물 및 이를 이용한 투명 플라스틱 기판소재 |
| EP2732966B1 (en) * | 2011-07-15 | 2016-03-02 | Konica Minolta, Inc. | Gas barrier film and method for producing same |
| CN102636898B (zh) * | 2012-03-14 | 2014-03-12 | 京东方科技集团股份有限公司 | 一种柔性显示装置的制备方法 |
| JP5956867B2 (ja) * | 2012-08-21 | 2016-07-27 | 株式会社ジャパンディスプレイ | 表示装置の製造方法 |
| KR102087647B1 (ko) * | 2012-09-27 | 2020-03-11 | 닛테츠 케미컬 앤드 머티리얼 가부시키가이샤 | 표시 장치의 제조 방법 |
| CN104854722B (zh) * | 2012-11-30 | 2017-09-22 | 乐金显示有限公司 | 包括柔性基板的有机发光器件及其制备方法 |
| JP2014186169A (ja) * | 2013-03-22 | 2014-10-02 | Toshiba Corp | 表示装置の製造方法及び表示装置 |
| JP2015060780A (ja) * | 2013-09-20 | 2015-03-30 | 株式会社東芝 | 表示装置の製造方法及び製造システム |
| CN106597697A (zh) | 2013-12-02 | 2017-04-26 | 株式会社半导体能源研究所 | 显示装置及其制造方法 |
| JP2016004112A (ja) * | 2014-06-16 | 2016-01-12 | 株式会社ジャパンディスプレイ | 表示装置の製造方法 |
| KR102410594B1 (ko) * | 2015-04-30 | 2022-06-20 | 삼성디스플레이 주식회사 | 박막 트랜지스터 기판 및 이를 구비하는 표시 패널 |
| KR102288354B1 (ko) | 2015-08-10 | 2021-08-11 | 삼성디스플레이 주식회사 | 플렉서블 디스플레이 장치의 제조 방법 |
| JP6784969B2 (ja) | 2015-10-22 | 2020-11-18 | 天馬微電子有限公司 | 薄膜デバイスとその製造方法 |
| KR102554691B1 (ko) * | 2016-10-07 | 2023-07-11 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 유리 기판의 세정 방법, 반도체 장치의 제작 방법, 및 유리 기판 |
| CN109087936A (zh) * | 2018-08-24 | 2018-12-25 | 京东方科技集团股份有限公司 | 一种柔性显示基板的制备方法 |
| JP7306835B2 (ja) * | 2019-02-19 | 2023-07-11 | 株式会社ジャパンディスプレイ | 樹脂基板を有する装置及びその製造方法 |
Family Cites Families (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP1655633A3 (en) * | 1996-08-27 | 2006-06-21 | Seiko Epson Corporation | Exfoliating method, transferring method of thin film device, thin film integrated circuit device, and liquid crystal display device |
| JP4619462B2 (ja) * | 1996-08-27 | 2011-01-26 | セイコーエプソン株式会社 | 薄膜素子の転写方法 |
| JPH1126733A (ja) * | 1997-07-03 | 1999-01-29 | Seiko Epson Corp | 薄膜デバイスの転写方法、薄膜デバイス、薄膜集積回路装置，アクティブマトリクス基板、液晶表示装置および電子機器 |
| TWI225556B (en) * | 2000-09-13 | 2004-12-21 | Au Optronics Corp | Manufacturing method of reflective liquid crystal display |
| JP2003066858A (ja) * | 2001-08-23 | 2003-03-05 | Sony Corp | 薄膜デバイス基板の製造方法 |
| JP4071652B2 (ja) * | 2002-03-04 | 2008-04-02 | 株式会社 日立ディスプレイズ | 有機ｅｌ発光表示装置 |
| GB0208506D0 (en) * | 2002-04-12 | 2002-05-22 | Dupont Teijin Films Us Ltd | Film coating |
| JP2004151561A (ja) * | 2002-10-31 | 2004-05-27 | Seiko Epson Corp | 電気光学装置の製造方法 |
| US7102155B2 (en) * | 2003-09-04 | 2006-09-05 | Hitachi, Ltd. | Electrode substrate, thin film transistor, display device and their production |
| KR101174749B1 (ko) * | 2003-11-06 | 2012-08-17 | 스미또모 가가꾸 가부시끼가이샤 | 배향된 중합체막을 포함하는 이색성 게스트 호스트 편광체 |
| GB0327093D0 (en) * | 2003-11-21 | 2003-12-24 | Koninkl Philips Electronics Nv | Active matrix displays and other electronic devices having plastic substrates |
| KR100623694B1 (ko) * | 2004-08-30 | 2006-09-19 | 삼성에스디아이 주식회사 | 레이저 전사용 도너 기판 및 그 기판을 사용하여 제조되는유기 전계 발광 소자의 제조 방법 |
| US20060244373A1 (en) * | 2005-04-28 | 2006-11-02 | Semiconductor Energy Laboratory Co., Ltd. | Light emitting device and method for manufacturing thereof |
| KR100830341B1 (ko) * | 2005-09-30 | 2008-05-16 | 삼성에스디아이 주식회사 | 액정표시장치 |
-
2007
- 2007-05-23 JP JP2007136139A patent/JP5150138B2/ja active Active
-
2008
- 2008-05-21 US US12/153,568 patent/US20080292786A1/en not_active Abandoned
- 2008-05-21 TW TW097118732A patent/TW200915250A/zh not_active IP Right Cessation
- 2008-05-22 KR KR1020080047647A patent/KR100994870B1/ko active Active
- 2008-05-23 CN CNA2008101090480A patent/CN101311789A/zh active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| KR20080103443A (ko) | 2008-11-27 |
| JP5150138B2 (ja) | 2013-02-20 |
| KR100994870B1 (ko) | 2010-11-16 |
| US20080292786A1 (en) | 2008-11-27 |
| CN101311789A (zh) | 2008-11-26 |
| JP2008292608A (ja) | 2008-12-04 |
| TW200915250A (en) | 2009-04-01 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| MM4A | Annulment or lapse of patent due to non-payment of fees |