CN101307475B - 铟组合物 - Google Patents
铟组合物 Download PDFInfo
- Publication number
- CN101307475B CN101307475B CN2007101441976A CN200710144197A CN101307475B CN 101307475 B CN101307475 B CN 101307475B CN 2007101441976 A CN2007101441976 A CN 2007101441976A CN 200710144197 A CN200710144197 A CN 200710144197A CN 101307475 B CN101307475 B CN 101307475B
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- indium
- metal
- composition
- epihalohydrin
- matrix
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- C25D3/54—Electroplating: Baths therefor from solutions of metals not provided for in groups C25D3/04 - C25D3/50
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/30—Technical effects
- H01L2924/301—Electrical effects
- H01L2924/3011—Impedance
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- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
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- Metallurgy (AREA)
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- Medicinal Chemistry (AREA)
- Polymers & Plastics (AREA)
- Electroplating And Plating Baths Therefor (AREA)
- Electroplating Methods And Accessories (AREA)
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Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
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US87517706P | 2006-12-15 | 2006-12-15 | |
US60/875,177 | 2006-12-15 |
Publications (2)
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CN101307475A CN101307475A (zh) | 2008-11-19 |
CN101307475B true CN101307475B (zh) | 2011-10-12 |
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CN2007101441976A Active CN101307475B (zh) | 2006-12-15 | 2007-12-17 | 铟组合物 |
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US (2) | US8460533B2 (de) |
EP (1) | EP1939935B1 (de) |
JP (1) | JP5497261B2 (de) |
KR (1) | KR101447475B1 (de) |
CN (1) | CN101307475B (de) |
TW (1) | TWI373454B (de) |
Families Citing this family (18)
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EP2848714B1 (de) * | 2008-04-22 | 2016-11-23 | Rohm and Haas Electronic Materials LLC | Verfahren zum Nachfüllen von Indiumionen in Indium-Elektroplattierzusammensetzungen |
GB2473285A (en) * | 2009-09-08 | 2011-03-09 | Astron Advanced Materials Ltd | Low temperature joining process |
US20110108115A1 (en) * | 2009-11-11 | 2011-05-12 | International Business Machines Corporation | Forming a Photovoltaic Device |
US8262895B2 (en) | 2010-03-15 | 2012-09-11 | Rohm And Haas Electronic Materials Llc | Plating bath and method |
US20110220512A1 (en) | 2010-03-15 | 2011-09-15 | Rohm And Haas Electronic Materials Llc | Plating bath and method |
US8268157B2 (en) | 2010-03-15 | 2012-09-18 | Rohm And Haas Electronic Materials Llc | Plating bath and method |
JP5552042B2 (ja) | 2010-12-27 | 2014-07-16 | インターナショナル・ビジネス・マシーンズ・コーポレーション | プログラム解析の方法、システムおよびプログラム |
TW201302616A (zh) * | 2011-07-12 | 2013-01-16 | Ind Tech Res Inst | 硫化銦薄膜的製備方法 |
US9145616B2 (en) * | 2012-02-29 | 2015-09-29 | Rohm and Haas Elcetronic Materials LLC | Method of preventing silver tarnishing |
EP3359710B1 (de) | 2015-10-06 | 2020-04-08 | ATOTECH Deutschland GmbH | Verfahren zur abscheidung von indium oder indiumlegierung |
EP3199666B1 (de) * | 2016-01-29 | 2018-09-26 | ATOTECH Deutschland GmbH | Wässriges indium- oder indiumlegierungsplattierungsbad und verfahren zur abscheidung von indium oder einer indiumlegierung |
US10519557B2 (en) * | 2016-02-12 | 2019-12-31 | Macdermid Enthone Inc. | Leveler compositions for use in copper deposition in manufacture of microelectronics |
US10428436B2 (en) * | 2016-07-18 | 2019-10-01 | Rohm And Haas Electronic Materials Llc | Indium electroplating compositions containing amine compounds and methods of electroplating indium |
US9809892B1 (en) * | 2016-07-18 | 2017-11-07 | Rohm And Haas Electronic Materials Llc | Indium electroplating compositions containing 1,10-phenanthroline compounds and methods of electroplating indium |
US20180016689A1 (en) * | 2016-07-18 | 2018-01-18 | Rohm And Haas Electronic Materials Llc | Indium electroplating compositions and methods for electroplating indium |
US20180016690A1 (en) * | 2016-07-18 | 2018-01-18 | Rohm And Haas Electronic Materials Llc | Indium electroplating compositions containing 2-imidazolidinethione compounds and methods for electroplating indium |
CN109728029B (zh) * | 2017-10-31 | 2021-03-30 | 云谷(固安)科技有限公司 | 显示面板和终端 |
US10394292B1 (en) | 2018-06-11 | 2019-08-27 | Microsoft Technology Licensing, Llc | Cryogenic computing system with thermal management using a metal preform |
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2007
- 2007-12-12 JP JP2007320698A patent/JP5497261B2/ja active Active
- 2007-12-13 EP EP07123162.5A patent/EP1939935B1/de active Active
- 2007-12-13 TW TW096147581A patent/TWI373454B/zh active
- 2007-12-13 US US12/002,080 patent/US8460533B2/en active Active
- 2007-12-14 KR KR1020070131424A patent/KR101447475B1/ko active IP Right Grant
- 2007-12-17 CN CN2007101441976A patent/CN101307475B/zh active Active
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2013
- 2013-06-06 US US13/911,665 patent/US9206519B2/en active Active
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US3974045A (en) * | 1973-12-10 | 1976-08-10 | Dipsol Chemicals Co., Ltd. | Method for electroplating bright zinc |
US6811673B2 (en) * | 2000-07-10 | 2004-11-02 | Basf Aktiengesellschaft | Method for electrolytic galvanizing using electrolytes containing alkane sulphonic acid |
Also Published As
Publication number | Publication date |
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KR20080055739A (ko) | 2008-06-19 |
KR101447475B1 (ko) | 2014-10-06 |
US20130270117A1 (en) | 2013-10-17 |
TW200833608A (en) | 2008-08-16 |
EP1939935B1 (de) | 2018-12-05 |
CN101307475A (zh) | 2008-11-19 |
JP2008163460A (ja) | 2008-07-17 |
EP1939935A2 (de) | 2008-07-02 |
US8460533B2 (en) | 2013-06-11 |
JP5497261B2 (ja) | 2014-05-21 |
TWI373454B (en) | 2012-10-01 |
US20110103022A1 (en) | 2011-05-05 |
US9206519B2 (en) | 2015-12-08 |
EP1939935A3 (de) | 2009-07-29 |
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