CN101303990B - 半导体模块的制造方法、半导体模块及便携设备 - Google Patents

半导体模块的制造方法、半导体模块及便携设备 Download PDF

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Publication number
CN101303990B
CN101303990B CN2008101277478A CN200810127747A CN101303990B CN 101303990 B CN101303990 B CN 101303990B CN 2008101277478 A CN2008101277478 A CN 2008101277478A CN 200810127747 A CN200810127747 A CN 200810127747A CN 101303990 B CN101303990 B CN 101303990B
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China
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semiconductor
copper plate
semiconductor module
metallic plate
electrode
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Expired - Fee Related
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CN2008101277478A
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Chinese (zh)
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CN101303990A (zh
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冈山芳央
柳瀬康行
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Sanyo Electric Co Ltd
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Sanyo Electric Co Ltd
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H10W74/01—Manufacture or treatment
    • H10W74/014—Manufacture or treatment using batch processing
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/01—Manufacture or treatment
    • H10W70/04—Manufacture or treatment of leadframes
    • H10W70/042—Etching
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/01—Manufacture or treatment
    • H10W72/0198—Manufacture or treatment batch processes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/01—Manufacture or treatment
    • H10W70/05—Manufacture or treatment of insulating or insulated package substrates, or of interposers, or of redistribution layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/60—Insulating or insulated package substrates; Interposers; Redistribution layers
    • H10W70/62—Insulating or insulated package substrates; Interposers; Redistribution layers characterised by their interconnections
    • H10W70/65—Shapes or dispositions of interconnections
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/60—Insulating or insulated package substrates; Interposers; Redistribution layers
    • H10W70/62—Insulating or insulated package substrates; Interposers; Redistribution layers characterised by their interconnections
    • H10W70/65—Shapes or dispositions of interconnections
    • H10W70/654—Top-view layouts
    • H10W70/656—Fan-in layouts
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/01—Manufacture or treatment
    • H10W72/012—Manufacture or treatment of bump connectors, dummy bumps or thermal bumps
    • H10W72/01221—Manufacture or treatment of bump connectors, dummy bumps or thermal bumps using local deposition
    • H10W72/01223—Manufacture or treatment of bump connectors, dummy bumps or thermal bumps using local deposition in liquid form, e.g. by dispensing droplets or by screen printing
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/01—Manufacture or treatment
    • H10W72/013—Manufacture or treatment of die-attach connectors
    • H10W72/01331—Manufacture or treatment of die-attach connectors using blanket deposition
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/01—Manufacture or treatment
    • H10W72/019—Manufacture or treatment of bond pads
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/20—Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps
    • H10W72/241—Dispositions, e.g. layouts
    • H10W72/244—Dispositions, e.g. layouts relative to underlying supporting features, e.g. bond pads, RDLs or vias
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/20—Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps
    • H10W72/251—Materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/20—Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps
    • H10W72/251—Materials
    • H10W72/252—Materials comprising solid metals or solid metalloids, e.g. PbSn, Ag or Cu
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/20—Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps
    • H10W72/29—Bond pads specially adapted therefor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H10W72/921—Structures or relative sizes of bond pads
    • H10W72/922—Bond pads being integral with underlying chip-level interconnections
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H10W72/951—Materials of bond pads
    • H10W72/952—Materials of bond pads comprising metals or metalloids, e.g. PbSn, Ag or Cu
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/721—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bump connectors
    • H10W90/726—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bump connectors between a chip and a stacked lead frame, conducting package substrate or heat sink

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  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
CN2008101277478A 2007-01-31 2008-01-31 半导体模块的制造方法、半导体模块及便携设备 Expired - Fee Related CN101303990B (zh)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2007020657 2007-01-31
JP020657/07 2007-01-31
JP012240/08 2008-01-23
JP2008012240A JP4902558B2 (ja) 2007-01-31 2008-01-23 半導体モジュールの製造方法

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CN101303990A CN101303990A (zh) 2008-11-12
CN101303990B true CN101303990B (zh) 2011-08-24

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CN (1) CN101303990B (https=)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100823699B1 (ko) * 2006-11-29 2008-04-21 삼성전자주식회사 플립칩 어셈블리 및 그 제조 방법
JP2008211125A (ja) * 2007-02-28 2008-09-11 Spansion Llc 半導体装置およびその製造方法
JP4760930B2 (ja) * 2009-02-27 2011-08-31 株式会社デンソー Ｉｃ搭載基板、多層プリント配線板、及び製造方法
JP2010262992A (ja) * 2009-04-30 2010-11-18 Sanyo Electric Co Ltd 半導体モジュールおよび携帯機器
TWI501376B (zh) * 2009-10-07 2015-09-21 精材科技股份有限公司 晶片封裝體及其製造方法
US9484259B2 (en) 2011-09-21 2016-11-01 STATS ChipPAC Pte. Ltd. Semiconductor device and method of forming protection and support structure for conductive interconnect structure
US9082832B2 (en) * 2011-09-21 2015-07-14 Stats Chippac, Ltd. Semiconductor device and method of forming protection and support structure for conductive interconnect structure
US8664039B2 (en) * 2011-10-18 2014-03-04 Taiwan Semiconductor Manufacturing Company, Ltd. Methods and apparatus for alignment in flip chip bonding
JP5624699B1 (ja) * 2012-12-21 2014-11-12 パナソニック株式会社 電子部品パッケージおよびその製造方法
JP7244339B2 (ja) * 2019-04-19 2023-03-22 株式会社三社電機製作所 半導体モジュール用外部端子
CN110164839B (zh) * 2019-05-27 2020-01-31 广东工业大学 一种高密度线路嵌入转移的扇出型封装结构与方法
JP7622571B2 (ja) * 2021-07-08 2025-01-28 住友電装株式会社 回路構成体、及び電気接続箱

Citations (1)

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Publication number Priority date Publication date Assignee Title
CN1375869A (zh) * 2001-03-19 2002-10-23 卡西欧计算机株式会社 半导体器件及其制造方法

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US5821627A (en) * 1993-03-11 1998-10-13 Kabushiki Kaisha Toshiba Electronic circuit device
JP3533284B2 (ja) 1996-04-24 2004-05-31 新光電気工業株式会社 半導体装置用基板及びその製造方法並びに半導体装置
AU6418998A (en) * 1997-03-21 1998-10-20 Seiko Epson Corporation Semiconductor device, film carrier tape, and method for manufacturing them
JP2000068641A (ja) 1998-08-20 2000-03-03 Mitsubishi Gas Chem Co Inc プリント配線板の製造方法
MY144574A (en) * 1998-09-14 2011-10-14 Ibiden Co Ltd Printed circuit board and method for its production
JP2001053195A (ja) * 1999-08-11 2001-02-23 Mitsui High Tec Inc 半導体装置の製造方法
JP2001223287A (ja) * 2000-02-07 2001-08-17 Mitsui High Tec Inc インターポーザーの製造方法
JP2006310530A (ja) * 2005-04-28 2006-11-09 Sanyo Electric Co Ltd 回路装置およびその製造方法
JP4568215B2 (ja) * 2005-11-30 2010-10-27 三洋電機株式会社 回路装置および回路装置の製造方法

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1375869A (zh) * 2001-03-19 2002-10-23 卡西欧计算机株式会社 半导体器件及其制造方法

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
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JP特开2005-93652A 2005.04.07

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US20080284012A1 (en) 2008-11-20
JP4902558B2 (ja) 2012-03-21
US7989359B2 (en) 2011-08-02
CN101303990A (zh) 2008-11-12
JP2008211189A (ja) 2008-09-11

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