US4346164A
(en)
|
1980-10-06 |
1982-08-24 |
Werner Tabarelli |
Photolithographic method for the manufacture of integrated circuits
|
JPS57153433A
(en)
|
1981-03-18 |
1982-09-22 |
Hitachi Ltd |
Manufacturing device for semiconductor
|
JPH0782981B2
(ja)
*
|
1986-02-07 |
1995-09-06 |
株式会社ニコン |
投影露光方法及び装置
|
JP2897355B2
(ja)
|
1990-07-05 |
1999-05-31 |
株式会社ニコン |
アライメント方法,露光装置,並びに位置検出方法及び装置
|
JPH06124873A
(ja)
*
|
1992-10-09 |
1994-05-06 |
Canon Inc |
液浸式投影露光装置
|
JP2753930B2
(ja)
*
|
1992-11-27 |
1998-05-20 |
キヤノン株式会社 |
液浸式投影露光装置
|
JP3412704B2
(ja)
|
1993-02-26 |
2003-06-03 |
株式会社ニコン |
投影露光方法及び装置、並びに露光装置
|
JPH0750246A
(ja)
*
|
1993-08-06 |
1995-02-21 |
Hitachi Ltd |
半導体製造装置
|
US5874820A
(en)
|
1995-04-04 |
1999-02-23 |
Nikon Corporation |
Window frame-guided stage mechanism
|
US5528118A
(en)
|
1994-04-01 |
1996-06-18 |
Nikon Precision, Inc. |
Guideless stage with isolated reaction stage
|
JP3555230B2
(ja)
|
1994-05-18 |
2004-08-18 |
株式会社ニコン |
投影露光装置
|
US5623853A
(en)
|
1994-10-19 |
1997-04-29 |
Nikon Precision Inc. |
Precision motion stage with single guide beam and follower stage
|
JPH08181058A
(ja)
*
|
1994-12-27 |
1996-07-12 |
Sony Corp |
投影露光方法およびこれに用いる投影露光装置
|
JPH08316124A
(ja)
|
1995-05-19 |
1996-11-29 |
Hitachi Ltd |
投影露光方法及び露光装置
|
US6239038B1
(en)
*
|
1995-10-13 |
2001-05-29 |
Ziying Wen |
Method for chemical processing semiconductor wafers
|
TW353777B
(en)
*
|
1996-11-08 |
1999-03-01 |
Tokyo Electron Ltd |
Treatment device
|
JP4029183B2
(ja)
|
1996-11-28 |
2008-01-09 |
株式会社ニコン |
投影露光装置及び投影露光方法
|
JP4029182B2
(ja)
|
1996-11-28 |
2008-01-09 |
株式会社ニコン |
露光方法
|
CN1244018C
(zh)
|
1996-11-28 |
2006-03-01 |
株式会社尼康 |
曝光方法和曝光装置
|
DE69735016T2
(de)
|
1996-12-24 |
2006-08-17 |
Asml Netherlands B.V. |
Lithographisches Gerät mit zwei Objekthaltern
|
JPH10289942A
(ja)
*
|
1997-04-11 |
1998-10-27 |
Nikon Corp |
ステージ装置及び投影露光装置
|
JP3747566B2
(ja)
*
|
1997-04-23 |
2006-02-22 |
株式会社ニコン |
液浸型露光装置
|
WO1999027568A1
(fr)
|
1997-11-21 |
1999-06-03 |
Nikon Corporation |
Graveur de motifs a projection et procede de sensibilisation a projection
|
US6020964A
(en)
|
1997-12-02 |
2000-02-01 |
Asm Lithography B.V. |
Interferometer system and lithograph apparatus including an interferometer system
|
AU2747999A
(en)
|
1998-03-26 |
1999-10-18 |
Nikon Corporation |
Projection exposure method and system
|
JP2000114141A
(ja)
*
|
1998-10-02 |
2000-04-21 |
Hitachi Ltd |
半導体装置の製造方法およびそれに用いる半導体製造装置
|
US6486955B1
(en)
|
1998-10-14 |
2002-11-26 |
Nikon Corporation |
Shape measuring method and shape measuring device, position control method, stage device, exposure apparatus and method for producing exposure apparatus, and device and method for manufacturing device
|
JP2000228439A
(ja)
*
|
1999-02-05 |
2000-08-15 |
Advantest Corp |
ステージ上のパーティクル除去方法及び清掃板
|
US6995930B2
(en)
|
1999-12-29 |
2006-02-07 |
Carl Zeiss Smt Ag |
Catadioptric projection objective with geometric beam splitting
|
US7187503B2
(en)
|
1999-12-29 |
2007-03-06 |
Carl Zeiss Smt Ag |
Refractive projection objective for immersion lithography
|
US6842248B1
(en)
*
|
2000-11-28 |
2005-01-11 |
Nikon Corporation |
System and method for calibrating mirrors of a stage assembly
|
KR100866818B1
(ko)
|
2000-12-11 |
2008-11-04 |
가부시키가이샤 니콘 |
투영광학계 및 이 투영광학계를 구비한 노광장치
|
US6601777B2
(en)
*
|
2001-01-30 |
2003-08-05 |
Msp Corporation |
Suspended particle container for an atomizer
|
WO2002091078A1
(en)
|
2001-05-07 |
2002-11-14 |
Massachusetts Institute Of Technology |
Methods and apparatus employing an index matching medium
|
US6912054B2
(en)
*
|
2001-08-28 |
2005-06-28 |
Zygo Corporation |
Interferometric stage system
|
US6801301B2
(en)
*
|
2001-10-12 |
2004-10-05 |
Canon Kabushiki Kaisha |
Exposure apparatus
|
DE10229818A1
(de)
|
2002-06-28 |
2004-01-15 |
Carl Zeiss Smt Ag |
Verfahren zur Fokusdetektion und Abbildungssystem mit Fokusdetektionssystem
|
DE10210899A1
(de)
|
2002-03-08 |
2003-09-18 |
Zeiss Carl Smt Ag |
Refraktives Projektionsobjektiv für Immersions-Lithographie
|
US7092069B2
(en)
|
2002-03-08 |
2006-08-15 |
Carl Zeiss Smt Ag |
Projection exposure method and projection exposure system
|
US6988327B2
(en)
*
|
2002-09-30 |
2006-01-24 |
Lam Research Corporation |
Methods and systems for processing a substrate using a dynamic liquid meniscus
|
US7367345B1
(en)
|
2002-09-30 |
2008-05-06 |
Lam Research Corporation |
Apparatus and method for providing a confined liquid for immersion lithography
|
US6954993B1
(en)
|
2002-09-30 |
2005-10-18 |
Lam Research Corporation |
Concentric proximity processing head
|
US7383843B2
(en)
|
2002-09-30 |
2008-06-10 |
Lam Research Corporation |
Method and apparatus for processing wafer surfaces using thin, high velocity fluid layer
|
US7093375B2
(en)
|
2002-09-30 |
2006-08-22 |
Lam Research Corporation |
Apparatus and method for utilizing a meniscus in substrate processing
|
US6988326B2
(en)
|
2002-09-30 |
2006-01-24 |
Lam Research Corporation |
Phobic barrier meniscus separation and containment
|
US6788477B2
(en)
|
2002-10-22 |
2004-09-07 |
Taiwan Semiconductor Manufacturing Co., Ltd. |
Apparatus for method for immersion lithography
|
EP1420299B1
(de)
|
2002-11-12 |
2011-01-05 |
ASML Netherlands B.V. |
Lithographischer Apparat mit Immersion und Verfahren zur Herstellung einer Vorrichtung
|
DE60335595D1
(de)
|
2002-11-12 |
2011-02-17 |
Asml Netherlands Bv |
Lithographischer Apparat mit Immersion und Verfahren zur Herstellung einer Vorrichtung
|
CN101470360B
(zh)
|
2002-11-12 |
2013-07-24 |
Asml荷兰有限公司 |
光刻装置和器件制造方法
|
SG2010050110A
(en)
|
2002-11-12 |
2014-06-27 |
Asml Netherlands Bv |
Lithographic apparatus and device manufacturing method
|
JP3953460B2
(ja)
|
2002-11-12 |
2007-08-08 |
エーエスエムエル ネザーランズ ビー.ブイ. |
リソグラフィ投影装置
|
EP1420298B1
(de)
|
2002-11-12 |
2013-02-20 |
ASML Netherlands B.V. |
Lithographischer Apparat
|
SG121822A1
(en)
|
2002-11-12 |
2006-05-26 |
Asml Netherlands Bv |
Lithographic apparatus and device manufacturing method
|
US7110081B2
(en)
|
2002-11-12 |
2006-09-19 |
Asml Netherlands B.V. |
Lithographic apparatus and device manufacturing method
|
DE10253679A1
(de)
|
2002-11-18 |
2004-06-03 |
Infineon Technologies Ag |
Optische Einrichtung zur Verwendung bei einem Lithographie-Verfahren, insbesondere zur Herstellung eines Halbleiter-Bauelements, sowie optisches Lithographieverfahren
|
SG131766A1
(en)
|
2002-11-18 |
2007-05-28 |
Asml Netherlands Bv |
Lithographic apparatus and device manufacturing method
|
DE10258718A1
(de)
|
2002-12-09 |
2004-06-24 |
Carl Zeiss Smt Ag |
Projektionsobjektiv, insbesondere für die Mikrolithographie, sowie Verfahren zur Abstimmung eines Projektionsobjektives
|
SG150388A1
(en)
*
|
2002-12-10 |
2009-03-30 |
Nikon Corp |
Exposure apparatus and method for producing device
|
EP1429190B1
(de)
|
2002-12-10 |
2012-05-09 |
Canon Kabushiki Kaisha |
Belichtungsapparat und -verfahren
|
WO2004053952A1
(ja)
|
2002-12-10 |
2004-06-24 |
Nikon Corporation |
露光装置及びデバイス製造方法
|
EP1573730B1
(de)
|
2002-12-13 |
2009-02-25 |
Koninklijke Philips Electronics N.V. |
Flüssigkeitsentfernung in einem verfahren und einer einrichtung zum bestrahlen von flecken auf einer schicht
|
EP1579435B1
(de)
|
2002-12-19 |
2007-06-27 |
Koninklijke Philips Electronics N.V. |
Verfahren und anordnung zum bestrahlen einer schicht mittels eines lichtpunkts
|
US7010958B2
(en)
|
2002-12-19 |
2006-03-14 |
Asml Holding N.V. |
High-resolution gas gauge proximity sensor
|
EP1732075A3
(de)
|
2002-12-19 |
2007-02-21 |
Koninklijke Philips Electronics N.V. |
Verfahren und Vorrichtung zur Punktbestrahlung auf einer Schicht
|
US6781670B2
(en)
|
2002-12-30 |
2004-08-24 |
Intel Corporation |
Immersion lithography
|
US7090964B2
(en)
|
2003-02-21 |
2006-08-15 |
Asml Holding N.V. |
Lithographic printing with polarized light
|
US7206059B2
(en)
|
2003-02-27 |
2007-04-17 |
Asml Netherlands B.V. |
Stationary and dynamic radial transverse electric polarizer for high numerical aperture systems
|
US6943941B2
(en)
|
2003-02-27 |
2005-09-13 |
Asml Netherlands B.V. |
Stationary and dynamic radial transverse electric polarizer for high numerical aperture systems
|
US7029832B2
(en)
|
2003-03-11 |
2006-04-18 |
Samsung Electronics Co., Ltd. |
Immersion lithography methods using carbon dioxide
|
US20050164522A1
(en)
|
2003-03-24 |
2005-07-28 |
Kunz Roderick R. |
Optical fluids, and systems and methods of making and using the same
|
JP4488004B2
(ja)
|
2003-04-09 |
2010-06-23 |
株式会社ニコン |
液浸リソグラフィ流体制御システム
|
JP4656057B2
(ja)
|
2003-04-10 |
2011-03-23 |
株式会社ニコン |
液浸リソグラフィ装置用電気浸透素子
|
KR101129213B1
(ko)
|
2003-04-10 |
2012-03-27 |
가부시키가이샤 니콘 |
액침 리소그래피 장치용 액체를 수집하는 런-오프 경로
|
KR20170064003A
(ko)
|
2003-04-10 |
2017-06-08 |
가부시키가이샤 니콘 |
액침 리소그래피 장치용 운반 영역을 포함하는 환경 시스템
|
CN104597717B
(zh)
|
2003-04-10 |
2017-09-05 |
株式会社尼康 |
包括用于沉浸光刻装置的真空清除的环境系统
|
JP4582089B2
(ja)
|
2003-04-11 |
2010-11-17 |
株式会社ニコン |
液浸リソグラフィ用の液体噴射回収システム
|
KR101508810B1
(ko)
*
|
2003-04-11 |
2015-04-14 |
가부시키가이샤 니콘 |
액침 리소그래피에 의한 광학기기의 세정방법
|
KR101178756B1
(ko)
|
2003-04-11 |
2012-08-31 |
가부시키가이샤 니콘 |
액침 리소그래피 머신에서 웨이퍼 교환동안 투영 렌즈 아래의 갭에서 액침액체를 유지하는 장치 및 방법
|
JP2006523958A
(ja)
|
2003-04-17 |
2006-10-19 |
株式会社ニコン |
液浸リソグラフィで使用するためのオートフォーカス素子の光学的構造
|
JP4025683B2
(ja)
|
2003-05-09 |
2007-12-26 |
松下電器産業株式会社 |
パターン形成方法及び露光装置
|
JP4146755B2
(ja)
|
2003-05-09 |
2008-09-10 |
松下電器産業株式会社 |
パターン形成方法
|
TWI295414B
(en)
|
2003-05-13 |
2008-04-01 |
Asml Netherlands Bv |
Lithographic apparatus and device manufacturing method
|
CN100437358C
(zh)
*
|
2003-05-15 |
2008-11-26 |
株式会社尼康 |
曝光装置及器件制造方法
|
TWI503865B
(zh)
|
2003-05-23 |
2015-10-11 |
尼康股份有限公司 |
A method of manufacturing an exposure apparatus and an element
|
EP1480065A3
(de)
|
2003-05-23 |
2006-05-10 |
Canon Kabushiki Kaisha |
Optisches Projektionssystem, Belichtungsapparat, und Verfahren zur Herstellung einer Vorrichtung
|
TWI442694B
(zh)
|
2003-05-30 |
2014-06-21 |
Asml Netherlands Bv |
微影裝置及元件製造方法
|
EP1486828B1
(de)
*
|
2003-06-09 |
2013-10-09 |
ASML Netherlands B.V. |
Lithographischer Apparat und Verfahren zur Herstellung einer Vorrichtung
|
US7213963B2
(en)
|
2003-06-09 |
2007-05-08 |
Asml Netherlands B.V. |
Lithographic apparatus and device manufacturing method
|
EP2261742A3
(de)
|
2003-06-11 |
2011-05-25 |
ASML Netherlands BV |
Lithographischer Apparat und Verfahren zur Herstellung einer Vorrichtung
|
JP4054285B2
(ja)
|
2003-06-12 |
2008-02-27 |
松下電器産業株式会社 |
パターン形成方法
|
JP4084710B2
(ja)
|
2003-06-12 |
2008-04-30 |
松下電器産業株式会社 |
パターン形成方法
|
KR101729866B1
(ko)
*
|
2003-06-13 |
2017-04-24 |
가부시키가이샤 니콘 |
노광 방법, 기판 스테이지, 노광 장치, 및 디바이스 제조 방법
|
US6867844B2
(en)
|
2003-06-19 |
2005-03-15 |
Asml Holding N.V. |
Immersion photolithography system and method using microchannel nozzles
|
JP4029064B2
(ja)
|
2003-06-23 |
2008-01-09 |
松下電器産業株式会社 |
パターン形成方法
|
JP4084712B2
(ja)
|
2003-06-23 |
2008-04-30 |
松下電器産業株式会社 |
パターン形成方法
|
JP4343597B2
(ja)
|
2003-06-25 |
2009-10-14 |
キヤノン株式会社 |
露光装置及びデバイス製造方法
|
JP2005019616A
(ja)
|
2003-06-25 |
2005-01-20 |
Canon Inc |
液浸式露光装置
|
EP1498778A1
(de)
|
2003-06-27 |
2005-01-19 |
ASML Netherlands B.V. |
Lithographischer Apparat und Verfahren zur Herstellung einer Vorrichtung
|
US6809794B1
(en)
|
2003-06-27 |
2004-10-26 |
Asml Holding N.V. |
Immersion photolithography system and method using inverted wafer-projection optics interface
|
DE60308161T2
(de)
|
2003-06-27 |
2007-08-09 |
Asml Netherlands B.V. |
Lithographischer Apparat und Verfahren zur Herstellung eines Artikels
|
JP3862678B2
(ja)
*
|
2003-06-27 |
2006-12-27 |
キヤノン株式会社 |
露光装置及びデバイス製造方法
|
EP1494074A1
(de)
|
2003-06-30 |
2005-01-05 |
ASML Netherlands B.V. |
Lithographischer Apparat und Verfahren zur Herstellung einer Vorrichtung
|
US7236232B2
(en)
|
2003-07-01 |
2007-06-26 |
Nikon Corporation |
Using isotopically specified fluids as optical elements
|
SG109000A1
(en)
|
2003-07-16 |
2005-02-28 |
Asml Netherlands Bv |
Lithographic apparatus and device manufacturing method
|
US7384149B2
(en)
|
2003-07-21 |
2008-06-10 |
Asml Netherlands B.V. |
Lithographic projection apparatus, gas purging method and device manufacturing method and purge gas supply system
|
EP1500982A1
(de)
|
2003-07-24 |
2005-01-26 |
ASML Netherlands B.V. |
Lithographischer Apparat und Verfahren zur Herstellung eines Artikels
|
US7006209B2
(en)
|
2003-07-25 |
2006-02-28 |
Advanced Micro Devices, Inc. |
Method and apparatus for monitoring and controlling imaging in immersion lithography systems
|
US7175968B2
(en)
|
2003-07-28 |
2007-02-13 |
Asml Netherlands B.V. |
Lithographic apparatus, device manufacturing method and a substrate
|
EP1503244A1
(de)
|
2003-07-28 |
2005-02-02 |
ASML Netherlands B.V. |
Lithographischer Projektionsapparat und Verfahren zur Herstellung einer Vorrichtung
|
EP2264535B1
(de)
*
|
2003-07-28 |
2013-02-13 |
Nikon Corporation |
Belichtungsapparat, Verfahren zur Herstellung einer Vorrichtung, und Verfahren zur Steuerung des Apparats
|
US7326522B2
(en)
|
2004-02-11 |
2008-02-05 |
Asml Netherlands B.V. |
Device manufacturing method and a substrate
|
US7779781B2
(en)
|
2003-07-31 |
2010-08-24 |
Asml Netherlands B.V. |
Lithographic apparatus and device manufacturing method
|
JP2005057294A
(ja)
|
2003-08-07 |
2005-03-03 |
Asml Netherlands Bv |
インタフェースユニット、該インタフェースユニットを含むリソグラフィ投影装置、及びデバイス製造方法
|
US7061578B2
(en)
|
2003-08-11 |
2006-06-13 |
Advanced Micro Devices, Inc. |
Method and apparatus for monitoring and controlling imaging in immersion lithography systems
|
US7579135B2
(en)
|
2003-08-11 |
2009-08-25 |
Taiwan Semiconductor Manufacturing Company, Ltd. |
Lithography apparatus for manufacture of integrated circuits
|
US7700267B2
(en)
|
2003-08-11 |
2010-04-20 |
Taiwan Semiconductor Manufacturing Company, Ltd. |
Immersion fluid for immersion lithography, and method of performing immersion lithography
|
US7085075B2
(en)
|
2003-08-12 |
2006-08-01 |
Carl Zeiss Smt Ag |
Projection objectives including a plurality of mirrors with lenses ahead of mirror M3
|
US6844206B1
(en)
|
2003-08-21 |
2005-01-18 |
Advanced Micro Devices, Llp |
Refractive index system monitor and control for immersion lithography
|
US7070915B2
(en)
|
2003-08-29 |
2006-07-04 |
Tokyo Electron Limited |
Method and system for drying a substrate
|
TWI263859B
(en)
|
2003-08-29 |
2006-10-11 |
Asml Netherlands Bv |
Lithographic apparatus and device manufacturing method
|
TWI245163B
(en)
|
2003-08-29 |
2005-12-11 |
Asml Netherlands Bv |
Lithographic apparatus and device manufacturing method
|
US6954256B2
(en)
|
2003-08-29 |
2005-10-11 |
Asml Netherlands B.V. |
Gradient immersion lithography
|
US7014966B2
(en)
|
2003-09-02 |
2006-03-21 |
Advanced Micro Devices, Inc. |
Method and apparatus for elimination of bubbles in immersion medium in immersion lithography systems
|
EP3223074A1
(de)
|
2003-09-03 |
2017-09-27 |
Nikon Corporation |
Vorrichtung und verfahren für immersionslithographie zur rückgewinnung eines fluids
|
US6961186B2
(en)
|
2003-09-26 |
2005-11-01 |
Takumi Technology Corp. |
Contact printing using a magnified mask image
|
US7369217B2
(en)
|
2003-10-03 |
2008-05-06 |
Micronic Laser Systems Ab |
Method and device for immersion lithography
|
US7678527B2
(en)
|
2003-10-16 |
2010-03-16 |
Intel Corporation |
Methods and compositions for providing photoresist with improved properties for contacting liquids
|
JP2007525824A
(ja)
|
2003-11-05 |
2007-09-06 |
ディーエスエム アイピー アセッツ ビー.ブイ. |
マイクロチップを製造するための方法および装置
|
US7924397B2
(en)
|
2003-11-06 |
2011-04-12 |
Taiwan Semiconductor Manufacturing Company, Ltd. |
Anti-corrosion layer on objective lens for liquid immersion lithography applications
|
US7545481B2
(en)
|
2003-11-24 |
2009-06-09 |
Asml Netherlands B.V. |
Lithographic apparatus and device manufacturing method
|
WO2005054953A2
(en)
|
2003-11-24 |
2005-06-16 |
Carl-Zeiss Smt Ag |
Holding device for an optical element in an objective
|
US7125652B2
(en)
|
2003-12-03 |
2006-10-24 |
Advanced Micro Devices, Inc. |
Immersion lithographic process using a conforming immersion medium
|
KR100965330B1
(ko)
|
2003-12-15 |
2010-06-22 |
칼 짜이스 에스엠티 아게 |
적어도 한 개의 액체 렌즈를 가진 마이크로리소그래피 투사대물렌즈로서의 대물렌즈
|
WO2005059617A2
(en)
|
2003-12-15 |
2005-06-30 |
Carl Zeiss Smt Ag |
Projection objective having a high aperture and a planar end surface
|
US7460206B2
(en)
|
2003-12-19 |
2008-12-02 |
Carl Zeiss Smt Ag |
Projection objective for immersion lithography
|
US20050185269A1
(en)
|
2003-12-19 |
2005-08-25 |
Carl Zeiss Smt Ag |
Catadioptric projection objective with geometric beam splitting
|
JP5102492B2
(ja)
|
2003-12-19 |
2012-12-19 |
カール・ツァイス・エスエムティー・ゲーエムベーハー |
結晶素子を有するマイクロリソグラフィー投影用対物レンズ
|
US7589818B2
(en)
|
2003-12-23 |
2009-09-15 |
Asml Netherlands B.V. |
Lithographic apparatus, alignment apparatus, device manufacturing method, and a method of converting an apparatus
|
US7394521B2
(en)
|
2003-12-23 |
2008-07-01 |
Asml Netherlands B.V. |
Lithographic apparatus and device manufacturing method
|
US7119884B2
(en)
|
2003-12-24 |
2006-10-10 |
Asml Netherlands B.V. |
Lithographic apparatus and device manufacturing method
|
US20050147920A1
(en)
|
2003-12-30 |
2005-07-07 |
Chia-Hui Lin |
Method and system for immersion lithography
|
US7088422B2
(en)
|
2003-12-31 |
2006-08-08 |
International Business Machines Corporation |
Moving lens for immersion optical lithography
|
JP4371822B2
(ja)
|
2004-01-06 |
2009-11-25 |
キヤノン株式会社 |
露光装置
|
JP4429023B2
(ja)
|
2004-01-07 |
2010-03-10 |
キヤノン株式会社 |
露光装置及びデバイス製造方法
|
US20050153424A1
(en)
|
2004-01-08 |
2005-07-14 |
Derek Coon |
Fluid barrier with transparent areas for immersion lithography
|
CN102169226B
(zh)
|
2004-01-14 |
2014-04-23 |
卡尔蔡司Smt有限责任公司 |
反射折射投影物镜
|
KR101099847B1
(ko)
|
2004-01-16 |
2011-12-27 |
칼 짜이스 에스엠티 게엠베하 |
편광변조 광학소자
|
WO2005069078A1
(en)
|
2004-01-19 |
2005-07-28 |
Carl Zeiss Smt Ag |
Microlithographic projection exposure apparatus with immersion projection lens
|
DE602005019689D1
(de)
|
2004-01-20 |
2010-04-15 |
Zeiss Carl Smt Ag |
Belichtungsvorrichtung und messeinrichtung für eine projektionslinse
|
US7026259B2
(en)
|
2004-01-21 |
2006-04-11 |
International Business Machines Corporation |
Liquid-filled balloons for immersion lithography
|
US7391501B2
(en)
|
2004-01-22 |
2008-06-24 |
Intel Corporation |
Immersion liquids with siloxane polymer for immersion lithography
|
US7589822B2
(en)
*
|
2004-02-02 |
2009-09-15 |
Nikon Corporation |
Stage drive method and stage unit, exposure apparatus, and device manufacturing method
|
US8852850B2
(en)
|
2004-02-03 |
2014-10-07 |
Rochester Institute Of Technology |
Method of photolithography using a fluid and a system thereof
|
EP1716454A1
(de)
|
2004-02-09 |
2006-11-02 |
Carl Zeiss SMT AG |
Projektionsobjektiv für eine mikrolithographische projektionsbelichtungsvorrichtung
|
US7050146B2
(en)
|
2004-02-09 |
2006-05-23 |
Asml Netherlands B.V. |
Lithographic apparatus and device manufacturing method
|
EP1714192A1
(de)
|
2004-02-13 |
2006-10-25 |
Carl Zeiss SMT AG |
Projektionsobjektiv für eine mikrolithographische projektionsbelichtungsvorrichtung
|
JP2007523383A
(ja)
|
2004-02-18 |
2007-08-16 |
コーニング インコーポレイテッド |
深紫外光による大開口数結像のための反射屈折結像光学系
|
US20050205108A1
(en)
|
2004-03-16 |
2005-09-22 |
Taiwan Semiconductor Manufacturing Co., Ltd. |
Method and system for immersion lithography lens cleaning
|
US7027125B2
(en)
|
2004-03-25 |
2006-04-11 |
International Business Machines Corporation |
System and apparatus for photolithography
|
US7084960B2
(en)
|
2004-03-29 |
2006-08-01 |
Intel Corporation |
Lithography using controlled polarization
|
US7227619B2
(en)
|
2004-04-01 |
2007-06-05 |
Asml Netherlands B.V. |
Lithographic apparatus and device manufacturing method
|
US7034917B2
(en)
|
2004-04-01 |
2006-04-25 |
Asml Netherlands B.V. |
Lithographic apparatus, device manufacturing method and device manufactured thereby
|
US7295283B2
(en)
|
2004-04-02 |
2007-11-13 |
Asml Netherlands B.V. |
Lithographic apparatus and device manufacturing method
|
WO2005098504A1
(en)
|
2004-04-08 |
2005-10-20 |
Carl Zeiss Smt Ag |
Imaging system with mirror group
|
US7898642B2
(en)
|
2004-04-14 |
2011-03-01 |
Asml Netherlands B.V. |
Lithographic apparatus and device manufacturing method
|
US7271878B2
(en)
|
2004-04-22 |
2007-09-18 |
International Business Machines Corporation |
Wafer cell for immersion lithography
|
US7244665B2
(en)
|
2004-04-29 |
2007-07-17 |
Micron Technology, Inc. |
Wafer edge ring structures and methods of formation
|
US7379159B2
(en)
|
2004-05-03 |
2008-05-27 |
Asml Netherlands B.V. |
Lithographic apparatus and device manufacturing method
|
EP1747499A2
(de)
|
2004-05-04 |
2007-01-31 |
Nikon Corporation |
Vorrichtung und verfahren zur bereitstellung eines fluids für die immersionslithographie
|
US20060244938A1
(en)
|
2004-05-04 |
2006-11-02 |
Karl-Heinz Schuster |
Microlitographic projection exposure apparatus and immersion liquid therefore
|
US7091502B2
(en)
|
2004-05-12 |
2006-08-15 |
Taiwan Semiconductor Manufacturing, Co., Ltd. |
Apparatus and method for immersion lithography
|
KR20170129271A
(ko)
|
2004-05-17 |
2017-11-24 |
칼 짜이스 에스엠티 게엠베하 |
중간이미지를 갖는 카타디옵트릭 투사 대물렌즈
|
US7616383B2
(en)
|
2004-05-18 |
2009-11-10 |
Asml Netherlands B.V. |
Lithographic apparatus and device manufacturing method
|
US7486381B2
(en)
|
2004-05-21 |
2009-02-03 |
Asml Netherlands B.V. |
Lithographic apparatus and device manufacturing method
|
US8605257B2
(en)
|
2004-06-04 |
2013-12-10 |
Carl Zeiss Smt Gmbh |
Projection system with compensation of intensity variations and compensation element therefor
|
CN100594430C
(zh)
|
2004-06-04 |
2010-03-17 |
卡尔蔡司Smt股份公司 |
用于测量光学成像系统的图像质量的系统
|