CN101290876B - Soi基板的制造方法 - Google Patents

Soi基板的制造方法 Download PDF

Info

Publication number
CN101290876B
CN101290876B CN2008100883358A CN200810088335A CN101290876B CN 101290876 B CN101290876 B CN 101290876B CN 2008100883358 A CN2008100883358 A CN 2008100883358A CN 200810088335 A CN200810088335 A CN 200810088335A CN 101290876 B CN101290876 B CN 101290876B
Authority
CN
China
Prior art keywords
ion
layer
substrate
semiconductor substrate
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CN2008100883358A
Other languages
English (en)
Chinese (zh)
Other versions
CN101290876A (zh
Inventor
山崎舜平
比嘉荣二
永野庸治
沟井达也
下村明久
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Semiconductor Energy Laboratory Co Ltd
Original Assignee
Semiconductor Energy Laboratory Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Semiconductor Energy Laboratory Co Ltd filed Critical Semiconductor Energy Laboratory Co Ltd
Publication of CN101290876A publication Critical patent/CN101290876A/zh
Application granted granted Critical
Publication of CN101290876B publication Critical patent/CN101290876B/zh
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
    • H01L21/76251—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques
    • H01L21/76254—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques with separation/delamination along an ion implanted layer, e.g. Smart-cut, Unibond
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
    • H01L21/2003—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy characterised by the substrate
    • H01L21/2007—Bonding of semiconductor wafers to insulating substrates or to semiconducting substrates using an intermediate insulating layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/268—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/01—Manufacture or treatment

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Power Engineering (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Thin Film Transistor (AREA)
  • Recrystallisation Techniques (AREA)
CN2008100883358A 2007-04-20 2008-03-28 Soi基板的制造方法 Expired - Fee Related CN101290876B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007-112140 2007-04-20
JP2007112140 2007-04-20

Related Child Applications (1)

Application Number Title Priority Date Filing Date
CN201210025514.3A Division CN102543833B (zh) 2007-04-20 2008-03-28 Soi基板的制造方法

Publications (2)

Publication Number Publication Date
CN101290876A CN101290876A (zh) 2008-10-22
CN101290876B true CN101290876B (zh) 2012-03-28

Family

ID=39681816

Family Applications (2)

Application Number Title Priority Date Filing Date
CN2008100883358A Expired - Fee Related CN101290876B (zh) 2007-04-20 2008-03-28 Soi基板的制造方法
CN201210025514.3A Expired - Fee Related CN102543833B (zh) 2007-04-20 2008-03-28 Soi基板的制造方法

Family Applications After (1)

Application Number Title Priority Date Filing Date
CN201210025514.3A Expired - Fee Related CN102543833B (zh) 2007-04-20 2008-03-28 Soi基板的制造方法

Country Status (6)

Country Link
US (2) US7897476B2 (enExample)
EP (1) EP1983566A2 (enExample)
JP (1) JP5285312B2 (enExample)
KR (1) KR101440930B1 (enExample)
CN (2) CN101290876B (enExample)
TW (1) TWI476870B (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8853684B2 (en) 2010-05-21 2014-10-07 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device

Families Citing this family (41)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101362688B1 (ko) * 2007-04-13 2014-02-17 가부시키가이샤 한도오따이 에네루기 켄큐쇼 광전 변환 장치 및 그 제조 방법
JP5289805B2 (ja) * 2007-05-10 2013-09-11 株式会社半導体エネルギー研究所 半導体装置製造用基板の作製方法
EP1993127B1 (en) * 2007-05-18 2013-04-24 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method of SOI substrate
KR101484296B1 (ko) * 2007-06-26 2015-01-19 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 기판의 제작방법
JP2009088500A (ja) * 2007-09-14 2009-04-23 Semiconductor Energy Lab Co Ltd Ｓｏｉ基板の作製方法
JP2009135430A (ja) * 2007-10-10 2009-06-18 Semiconductor Energy Lab Co Ltd 半導体装置の作製方法
JP5527956B2 (ja) 2007-10-10 2014-06-25 株式会社半導体エネルギー研究所 半導体基板の製造方法
US8236668B2 (en) * 2007-10-10 2012-08-07 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing SOI substrate
CN101842910B (zh) * 2007-11-01 2013-03-27 株式会社半导体能源研究所 用于制造光电转换器件的方法
JP5404064B2 (ja) 2008-01-16 2014-01-29 株式会社半導体エネルギー研究所 レーザ処理装置、および半導体基板の作製方法
EP2105957A3 (en) * 2008-03-26 2011-01-19 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing soi substrate and method for manufacturing semiconductor device
JP2009260313A (ja) * 2008-03-26 2009-11-05 Semiconductor Energy Lab Co Ltd Ｓｏｉ基板の作製方法及び半導体装置の作製方法
JP5654206B2 (ja) * 2008-03-26 2015-01-14 株式会社半導体エネルギー研究所 Ｓｏｉ基板の作製方法及び該ｓｏｉ基板を用いた半導体装置
JP2009260315A (ja) * 2008-03-26 2009-11-05 Semiconductor Energy Lab Co Ltd Ｓｏｉ基板の作製方法及び半導体装置の作製方法
JP5580010B2 (ja) * 2008-09-05 2014-08-27 株式会社半導体エネルギー研究所 半導体装置の作製方法
US8741740B2 (en) * 2008-10-02 2014-06-03 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing SOI substrate
SG182208A1 (en) * 2008-12-15 2012-07-30 Semiconductor Energy Lab Manufacturing method of soi substrate and manufacturing method of semiconductor device
EP2202795A1 (en) * 2008-12-24 2010-06-30 S.O.I. TEC Silicon Method for fabricating a semiconductor substrate and semiconductor substrate
JP2010161259A (ja) * 2009-01-09 2010-07-22 Toshiba Corp プロセスシミュレーションプログラム、プロセスシミュレーション方法、プロセスシミュレータ
KR20120059509A (ko) * 2009-08-25 2012-06-08 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 그 제작 방법
US8324084B2 (en) * 2010-03-31 2012-12-04 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method of semiconductor substrate and manufacturing method of semiconductor device
US8642380B2 (en) * 2010-07-02 2014-02-04 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method of semiconductor device
JP5902917B2 (ja) 2010-11-12 2016-04-13 株式会社半導体エネルギー研究所 半導体基板の作製方法
US20130280859A1 (en) * 2010-12-30 2013-10-24 Jae-ho Kim Thin-film transistor and method for manufacturing same
US8735263B2 (en) 2011-01-21 2014-05-27 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing SOI substrate
CN102222637A (zh) * 2011-06-23 2011-10-19 北京大学 一种绝缘体上锗衬底的制备方法
JP5766530B2 (ja) * 2011-07-13 2015-08-19 株式会社ディスコ 光デバイスウエーハの加工方法
JP5689832B2 (ja) * 2012-02-10 2015-03-25 日本電信電話株式会社 シリコン発光素子の製造方法
US8877603B2 (en) 2012-03-30 2014-11-04 International Business Machines Corporation Semiconductor-on-oxide structure and method of forming
JP6032963B2 (ja) * 2012-06-20 2016-11-30 キヤノン株式会社 Ｓｏｉ基板、ｓｏｉ基板の製造方法および半導体装置の製造方法
JP2015108735A (ja) * 2013-12-05 2015-06-11 旭硝子株式会社 電子デバイスの製造方法
JP6107709B2 (ja) * 2014-03-10 2017-04-05 信越半導体株式会社 貼り合わせｓｏｉウェーハの製造方法
JP6036732B2 (ja) * 2014-03-18 2016-11-30 信越半導体株式会社 貼り合わせウェーハの製造方法
US9890033B2 (en) 2015-04-06 2018-02-13 Honeywell International Inc. Silicon-on-sapphire device with minimal thermal strain preload and enhanced stability at high temperature
CN105789110B (zh) * 2016-04-25 2019-07-12 中国电子科技集团公司第五十五研究所 Mems开关用高升压倍数电荷泵电路及其制造方法
TWI622169B (zh) * 2017-02-17 2018-04-21 Powerchip Technology Corporation 半導體元件的製造方法
US11676996B2 (en) * 2017-07-19 2023-06-13 Mitsubishi Electric Corporation Method of manufacturing semiconductor device, and semiconductor device
CN107326435A (zh) * 2017-07-28 2017-11-07 西安交通大学 一种生长GaN的SiC衬底的剥离方法
WO2023276638A1 (ja) * 2021-06-30 2023-01-05 ダイキン工業株式会社 積層体の製造方法および積層体
US11908723B2 (en) * 2021-12-03 2024-02-20 International Business Machines Corporation Silicon handler with laser-release layers
CN117438293B (zh) * 2023-12-20 2024-03-12 青禾晶元(晋城)半导体材料有限公司 一种注入剥离方法以及其中氢离子注入的方法

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1260907A (zh) * 1997-06-19 2000-07-19 旭化成工业株式会社 Soi衬底及其制造方法和半导体器件及其制造方法
US6110845A (en) * 1997-04-11 2000-08-29 Sharp Kabushiki Kaisha Process for fabricating SOI substrate with high-efficiency recovery from damage due to Ion implantation
US6534380B1 (en) * 1997-07-18 2003-03-18 Denso Corporation Semiconductor substrate and method of manufacturing the same
US6927148B2 (en) * 2002-07-15 2005-08-09 Applied Materials, Inc. Ion implantation method and method for manufacturing SOI wafer

Family Cites Families (35)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2681472B1 (fr) * 1991-09-18 1993-10-29 Commissariat Energie Atomique Procede de fabrication de films minces de materiau semiconducteur.
TW232751B (en) * 1992-10-09 1994-10-21 Semiconductor Energy Res Co Ltd Semiconductor device and method for forming the same
JPH08255762A (ja) * 1995-03-17 1996-10-01 Nec Corp 半導体デバイスの製造方法
WO1997041590A1 (fr) * 1996-04-26 1997-11-06 Sumitomo Sitix Corporation Procede d'assemblage de substrat en semi-conducteur au silicium
JP4103968B2 (ja) * 1996-09-18 2008-06-18 株式会社半導体エネルギー研究所 絶縁ゲイト型半導体装置
US6191007B1 (en) * 1997-04-28 2001-02-20 Denso Corporation Method for manufacturing a semiconductor substrate
US6150239A (en) * 1997-05-31 2000-11-21 Max Planck Society Method for the transfer of thin layers monocrystalline material onto a desirable substrate
JPH1197379A (ja) 1997-07-25 1999-04-09 Denso Corp 半導体基板及び半導体基板の製造方法
US6388652B1 (en) * 1997-08-20 2002-05-14 Semiconductor Energy Laboratory Co., Ltd. Electrooptical device
US6686623B2 (en) * 1997-11-18 2004-02-03 Semiconductor Energy Laboratory Co., Ltd. Nonvolatile memory and electronic apparatus
JPH11163363A (ja) 1997-11-22 1999-06-18 Semiconductor Energy Lab Co Ltd 半導体装置およびその作製方法
JP2000012864A (ja) * 1998-06-22 2000-01-14 Semiconductor Energy Lab Co Ltd 半導体装置の作製方法
US6271101B1 (en) * 1998-07-29 2001-08-07 Semiconductor Energy Laboratory Co., Ltd. Process for production of SOI substrate and process for production of semiconductor device
JP2000077287A (ja) * 1998-08-26 2000-03-14 Nissin Electric Co Ltd 結晶薄膜基板の製造方法
JP4476390B2 (ja) * 1998-09-04 2010-06-09 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP2000124092A (ja) 1998-10-16 2000-04-28 Shin Etsu Handotai Co Ltd 水素イオン注入剥離法によってｓｏｉウエーハを製造する方法およびこの方法で製造されたｓｏｉウエーハ
FR2797347B1 (fr) * 1999-08-04 2001-11-23 Commissariat Energie Atomique Procede de transfert d'une couche mince comportant une etape de surfragililisation
US20010053559A1 (en) * 2000-01-25 2001-12-20 Semiconductor Energy Laboratory Co., Ltd. Method of fabricating display device
FR2894990B1 (fr) * 2005-12-21 2008-02-22 Soitec Silicon On Insulator Procede de fabrication de substrats, notamment pour l'optique,l'electronique ou l'optoelectronique et substrat obtenu selon ledit procede
JP4507395B2 (ja) * 2000-11-30 2010-07-21 セイコーエプソン株式会社 電気光学装置用素子基板の製造方法
JP4653374B2 (ja) * 2001-08-23 2011-03-16 セイコーエプソン株式会社 電気光学装置の製造方法
US7119365B2 (en) * 2002-03-26 2006-10-10 Sharp Kabushiki Kaisha Semiconductor device and manufacturing method thereof, SOI substrate and display device using the same, and manufacturing method of the SOI substrate
JP4772258B2 (ja) 2002-08-23 2011-09-14 シャープ株式会社 Ｓｏｉ基板の製造方法
JP4328067B2 (ja) * 2002-07-31 2009-09-09 アプライド マテリアルズ インコーポレイテッド イオン注入方法及びｓｏｉウエハの製造方法、並びにイオン注入装置
JP3751972B2 (ja) * 2003-12-02 2006-03-08 有限会社ボンドテック 接合方法及びこの方法により作成されるデバイス並びに表面活性化装置及びこの装置を備えた接合装置
JP4759919B2 (ja) * 2004-01-16 2011-08-31 セイコーエプソン株式会社 電気光学装置の製造方法
JP5110772B2 (ja) 2004-02-03 2012-12-26 株式会社半導体エネルギー研究所 半導体薄膜層を有する基板の製造方法
US7410882B2 (en) * 2004-09-28 2008-08-12 Palo Alto Research Center Incorporated Method of manufacturing and structure of polycrystalline semiconductor thin-film heterostructures on dissimilar substrates
US7148124B1 (en) * 2004-11-18 2006-12-12 Alexander Yuri Usenko Method for forming a fragile layer inside of a single crystalline substrate preferably for making silicon-on-insulator wafers
FR2888663B1 (fr) * 2005-07-13 2008-04-18 Soitec Silicon On Insulator Procede de diminution de la rugosite d'une couche epaisse d'isolant
JP2007281316A (ja) * 2006-04-11 2007-10-25 Sumco Corp Ｓｉｍｏｘウェーハの製造方法
US7579654B2 (en) * 2006-05-31 2009-08-25 Corning Incorporated Semiconductor on insulator structure made using radiation annealing
US20070281440A1 (en) * 2006-05-31 2007-12-06 Jeffrey Scott Cites Producing SOI structure using ion shower
JP4214534B2 (ja) 2006-12-13 2009-01-28 富士フイルム株式会社 記録用シートの製造方法及び装置
EP1993127B1 (en) * 2007-05-18 2013-04-24 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method of SOI substrate

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6110845A (en) * 1997-04-11 2000-08-29 Sharp Kabushiki Kaisha Process for fabricating SOI substrate with high-efficiency recovery from damage due to Ion implantation
CN1260907A (zh) * 1997-06-19 2000-07-19 旭化成工业株式会社 Soi衬底及其制造方法和半导体器件及其制造方法
US6534380B1 (en) * 1997-07-18 2003-03-18 Denso Corporation Semiconductor substrate and method of manufacturing the same
US6927148B2 (en) * 2002-07-15 2005-08-09 Applied Materials, Inc. Ion implantation method and method for manufacturing SOI wafer

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8853684B2 (en) 2010-05-21 2014-10-07 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device

Also Published As

Publication number Publication date
US20080261376A1 (en) 2008-10-23
TW200849495A (en) 2008-12-16
CN102543833B (zh) 2014-11-26
KR20080094558A (ko) 2008-10-23
CN101290876A (zh) 2008-10-22
JP2008288563A (ja) 2008-11-27
US7897476B2 (en) 2011-03-01
TWI476870B (zh) 2015-03-11
EP1983566A2 (en) 2008-10-22
KR101440930B1 (ko) 2014-09-15
CN102543833A (zh) 2012-07-04
JP5285312B2 (ja) 2013-09-11
US8193068B2 (en) 2012-06-05
US20110136320A1 (en) 2011-06-09

Similar Documents

Publication Publication Date Title
CN101290876B (zh) Soi基板的制造方法
CN101308782B (zh) Soi衬底的制造方法、以及半导体装置的制造方法
US7790572B2 (en) Method for manufacturing semiconductor substrate
JP5289805B2 (ja) 半導体装置製造用基板の作製方法
CN101425449B (zh) 半导体衬底的制造方法、半导体装置、及电子设备
CN102646698B (zh) 半导体装置及电子设备
US8034694B2 (en) SOI substrate, method for manufacturing the same, and semiconductor device
KR100634528B1 (ko) 단결정 실리콘 필름의 제조방법
CN102592977A (zh) 半导体装置的制造方法
US8765535B2 (en) Method for manufacturing a capacitor having a yttrium oxide layer
CN101840864A (zh) 半导体装置及其制造方法
CN101599464A (zh) 半导体装置的制造方法
JP2014195026A (ja) 複合基板
JP2009283480A (ja) 歪シリコン膜の製造方法

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C14 Grant of patent or utility model
GR01 Patent grant
CF01 Termination of patent right due to non-payment of annual fee

Granted publication date: 20120328

Termination date: 20190328

CF01 Termination of patent right due to non-payment of annual fee