CN101241861A - 新型多层无芯支撑结构及其制作方法 - Google Patents
新型多层无芯支撑结构及其制作方法 Download PDFInfo
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- CN101241861A CN101241861A CNA2007101052268A CN200710105226A CN101241861A CN 101241861 A CN101241861 A CN 101241861A CN A2007101052268 A CNA2007101052268 A CN A2007101052268A CN 200710105226 A CN200710105226 A CN 200710105226A CN 101241861 A CN101241861 A CN 101241861A
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- layer
- copper
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- photoresist
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- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
- H05K2201/09—Shape and layout
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- H05K2201/096—Vertically aligned vias, holes or stacked vias
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- H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
- H05K2203/07—Treatments involving liquids, e.g. plating, rinsing
- H05K2203/0703—Plating
- H05K2203/0733—Method for plating stud vias, i.e. massive vias formed by plating the bottom of a hole without plating on the walls
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- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/10—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern
- H05K3/20—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern by affixing prefabricated conductor pattern
- H05K3/205—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern by affixing prefabricated conductor pattern using a pattern electroplated or electroformed on a metallic carrier
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- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/40—Forming printed elements for providing electric connections to or between printed circuits
- H05K3/42—Plated through-holes or plated via connections
- H05K3/423—Plated through-holes or plated via connections characterised by electroplating method
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Ceramic Engineering (AREA)
- Production Of Multi-Layered Print Wiring Board (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Abstract
Description
Claims (36)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
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US11/421,600 | 2006-06-01 | ||
US11/421,600 US7682972B2 (en) | 2006-06-01 | 2006-06-01 | Advanced multilayer coreless support structures and method for their fabrication |
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CN101241861A true CN101241861A (zh) | 2008-08-13 |
CN101241861B CN101241861B (zh) | 2011-04-13 |
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Families Citing this family (76)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
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US7550857B1 (en) | 2006-11-16 | 2009-06-23 | Amkor Technology, Inc. | Stacked redistribution layer (RDL) die assembly package |
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US8440916B2 (en) * | 2007-06-28 | 2013-05-14 | Intel Corporation | Method of forming a substrate core structure using microvia laser drilling and conductive layer pre-patterning and substrate core structure formed according to the method |
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US8796561B1 (en) | 2009-10-05 | 2014-08-05 | Amkor Technology, Inc. | Fan out build up substrate stackable package and method |
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US8300423B1 (en) | 2010-05-25 | 2012-10-30 | Amkor Technology, Inc. | Stackable treated via package and method |
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US8525318B1 (en) | 2010-11-10 | 2013-09-03 | Amkor Technology, Inc. | Semiconductor device and fabricating method thereof |
US8557629B1 (en) | 2010-12-03 | 2013-10-15 | Amkor Technology, Inc. | Semiconductor device having overlapped via apertures |
US8535961B1 (en) | 2010-12-09 | 2013-09-17 | Amkor Technology, Inc. | Light emitting diode (LED) package and method |
US9406658B2 (en) * | 2010-12-17 | 2016-08-02 | Advanced Semiconductor Engineering, Inc. | Embedded component device and manufacturing methods thereof |
US9721872B1 (en) | 2011-02-18 | 2017-08-01 | Amkor Technology, Inc. | Methods and structures for increasing the allowable die size in TMV packages |
US9013011B1 (en) | 2011-03-11 | 2015-04-21 | Amkor Technology, Inc. | Stacked and staggered die MEMS package and method |
KR101140113B1 (ko) | 2011-04-26 | 2012-04-30 | 앰코 테크놀로지 코리아 주식회사 | 반도체 디바이스 |
US8841209B2 (en) | 2011-08-18 | 2014-09-23 | International Business Machines Corporation | Method for forming coreless flip chip ball grid array (FCBGA) substrates and such substrates formed by the method |
US8653674B1 (en) | 2011-09-15 | 2014-02-18 | Amkor Technology, Inc. | Electronic component package fabrication method and structure |
US8633598B1 (en) | 2011-09-20 | 2014-01-21 | Amkor Technology, Inc. | Underfill contacting stacking balls package fabrication method and structure |
US9029962B1 (en) | 2011-10-12 | 2015-05-12 | Amkor Technology, Inc. | Molded cavity substrate MEMS package fabrication method and structure |
JP2013106032A (ja) * | 2011-11-14 | 2013-05-30 | Sda Co Ltd | クリアランス・フィリング・pcb及びその製造方法 |
US9301391B2 (en) | 2011-11-29 | 2016-03-29 | Advanpack Solutions Pte Ltd. | Substrate structure, semiconductor package device, and manufacturing method of substrate structure |
US9144150B2 (en) | 2012-04-20 | 2015-09-22 | Xilinx, Inc. | Conductor structure with integrated via element |
US9440135B2 (en) * | 2012-05-29 | 2016-09-13 | Zhuhai Advanced Chip Carriers & Electronic Substrate Solutions Technologies Co. Ltd. | Multilayer electronic structures with integral vias extending in in-plane direction |
US8816218B2 (en) * | 2012-05-29 | 2014-08-26 | Zhuhai Advanced Chip Carriers & Electronic Substrate Solutions Technologies Co. Ltd. | Multilayer electronic structures with vias having different dimensions |
US9269593B2 (en) | 2012-05-29 | 2016-02-23 | Zhuhai Advanced Chip Carriers & Electronic Substrate Solutions Technologies Co. Ltd. | Multilayer electronic structure with integral stepped stacked structures |
US9312593B2 (en) | 2012-05-30 | 2016-04-12 | Zhuhai Advanced Chip Carriers & Electronic Substrate Solutions Technologies Co. Ltd. | Multilayer electronic structure with novel transmission lines |
US9185793B2 (en) | 2012-05-30 | 2015-11-10 | Zhuhai Advanced Chip Carriers & Electronic Substrate Solutions Technologies Co. Ltd. | Multilayer electronic structure with through thickness coaxial structures |
US9161461B2 (en) | 2012-06-14 | 2015-10-13 | Zhuhai Advanced Chip Carriers & Electronic Substrate Solutions Technologies Co. Ltd. | Multilayer electronic structure with stepped holes |
US8987602B2 (en) * | 2012-06-14 | 2015-03-24 | Zhuhai Advanced Chip Carriers & Electronic Substrate Solutions Technologies Co. Ltd. | Multilayer electronic support structure with cofabricated metal core |
US9137905B2 (en) | 2012-06-25 | 2015-09-15 | Zhuhai Advanced Chip Carriers & Electronic Substrate Solutions Technologies Co. Ltd. | Alignment between layers of multilayer electronic support structures |
US9615447B2 (en) | 2012-07-23 | 2017-04-04 | Zhuhai Advanced Chip Carriers & Electronic Substrate Solutions Technologies Co. Ltd. | Multilayer electronic support structure with integral constructional elements |
KR101884430B1 (ko) * | 2012-10-15 | 2018-08-01 | 삼성전기주식회사 | 다층 인쇄회로기판 및 그 제조 방법 |
KR20140047967A (ko) * | 2012-10-15 | 2014-04-23 | 삼성전기주식회사 | 다층형 코어리스 인쇄회로기판 및 그 제조 방법 |
US9368439B2 (en) * | 2012-11-05 | 2016-06-14 | Nvidia Corporation | Substrate build up layer to achieve both finer design rule and better package coplanarity |
KR101366461B1 (ko) | 2012-11-20 | 2014-02-26 | 앰코 테크놀로지 코리아 주식회사 | 반도체 디바이스 및 그 제조 방법 |
US9799592B2 (en) | 2013-11-19 | 2017-10-24 | Amkor Technology, Inc. | Semicondutor device with through-silicon via-less deep wells |
KR101488590B1 (ko) | 2013-03-29 | 2015-01-30 | 앰코 테크놀로지 코리아 주식회사 | 반도체 디바이스 및 그 제조 방법 |
KR101607981B1 (ko) | 2013-11-04 | 2016-03-31 | 앰코 테크놀로지 코리아 주식회사 | 반도체 패키지용 인터포저 및 이의 제조 방법, 제조된 인터포저를 이용한 반도체 패키지 |
US20150195912A1 (en) | 2014-01-08 | 2015-07-09 | Zhuhai Advanced Chip Carriers & Electronic Substrate Solutions Technologies Co. Ltd. | Substrates With Ultra Fine Pitch Flip Chip Bumps |
TWI474417B (zh) * | 2014-06-16 | 2015-02-21 | Phoenix Pioneer Technology Co Ltd | 封裝方法 |
US9502270B2 (en) * | 2014-07-08 | 2016-11-22 | Taiwan Semiconductor Manufacturing Company, Ltd. | Semiconductor device packages, packaging methods, and packaged semiconductor devices |
US9659805B2 (en) | 2015-04-17 | 2017-05-23 | Taiwan Semiconductor Manufacturing Company, Ltd. | Fan-out interconnect structure and methods forming the same |
WO2017039671A1 (en) * | 2015-09-03 | 2017-03-09 | Intel Corporation | Techniques to prevent film cracking in thermally cured dielectric film, and associated configurations |
US9960328B2 (en) | 2016-09-06 | 2018-05-01 | Amkor Technology, Inc. | Semiconductor device and manufacturing method thereof |
US10340251B2 (en) | 2017-04-26 | 2019-07-02 | Nxp Usa, Inc. | Method for making an electronic component package |
JP7140686B2 (ja) * | 2017-09-11 | 2022-09-21 | フジフイルム エレクトロニック マテリアルズ ユー.エス.エー., インコーポレイテッド | 誘電フィルム形成用組成物 |
US11315803B2 (en) | 2020-05-12 | 2022-04-26 | International Business Machines Corporation | Stress mitigation in organic laminates |
CN113314425B (zh) * | 2021-04-30 | 2023-12-26 | 珠海越亚半导体股份有限公司 | 具有导通柱和内埋线路的基板及其制作方法 |
FR3133482A1 (fr) * | 2022-03-11 | 2023-09-15 | Stmicroelectronics (Grenoble 2) Sas | Substrat d’interconnexion et procédé de fabrication d’un tel substrat |
Family Cites Families (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4970106A (en) * | 1989-06-02 | 1990-11-13 | International Business Machines Corporation | Thin film multilayer laminate interconnection board |
US5440805A (en) * | 1992-03-09 | 1995-08-15 | Rogers Corporation | Method of manufacturing a multilayer circuit |
JPH07147483A (ja) * | 1993-09-30 | 1995-06-06 | Ibiden Co Ltd | プリント配線板及びその製造方法 |
TW359016B (en) * | 1996-04-29 | 1999-05-21 | Applied Materials Inc | Selective aluminum chemical vapor deposition via fill using a sacrificial layer |
JPH1174636A (ja) * | 1997-08-28 | 1999-03-16 | Ngk Spark Plug Co Ltd | 配線基板の製造方法 |
IL128200A (en) * | 1999-01-24 | 2003-11-23 | Amitec Advanced Multilayer Int | Chip carrier substrate |
US6428942B1 (en) * | 1999-10-28 | 2002-08-06 | Fujitsu Limited | Multilayer circuit structure build up method |
JP2005101506A (ja) * | 2003-08-21 | 2005-04-14 | Seiko Epson Corp | 電子部品実装体の製造方法、電気光学装置の製造方法、電子部品実装体、電気光学装置 |
US7276787B2 (en) * | 2003-12-05 | 2007-10-02 | International Business Machines Corporation | Silicon chip carrier with conductive through-vias and method for fabricating same |
KR100601506B1 (ko) * | 2004-08-24 | 2006-07-19 | 삼성전기주식회사 | 양극 산화에 의한 미세 회로패턴이 형성된 패키지 기판의제조 방법 |
US7268012B2 (en) * | 2004-08-31 | 2007-09-11 | Micron Technology, Inc. | Methods for fabrication of thin semiconductor assemblies including redistribution layers and packages and assemblies formed thereby |
JP2006108211A (ja) * | 2004-10-01 | 2006-04-20 | North:Kk | 配線板と、その配線板を用いた多層配線基板と、その多層配線基板の製造方法 |
IL171378A (en) * | 2005-10-11 | 2010-11-30 | Dror Hurwitz | Integrated circuit support structures and the fabrication thereof |
-
2006
- 2006-06-01 US US11/421,600 patent/US7682972B2/en active Active
-
2007
- 2007-02-28 JP JP2007050798A patent/JP5309311B2/ja active Active
- 2007-03-02 KR KR1020070021036A patent/KR100915145B1/ko active IP Right Grant
- 2007-05-24 CN CN2007101052268A patent/CN101241861B/zh active Active
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Also Published As
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KR20070115589A (ko) | 2007-12-06 |
US7682972B2 (en) | 2010-03-23 |
US20070281471A1 (en) | 2007-12-06 |
KR100915145B1 (ko) | 2009-09-03 |
JP2007324565A (ja) | 2007-12-13 |
CN101241861B (zh) | 2011-04-13 |
JP5309311B2 (ja) | 2013-10-09 |
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