CN101231435A - 薄膜晶体管阵列面板 - Google Patents
薄膜晶体管阵列面板 Download PDFInfo
- Publication number
- CN101231435A CN101231435A CNA200810000821XA CN200810000821A CN101231435A CN 101231435 A CN101231435 A CN 101231435A CN A200810000821X A CNA200810000821X A CN A200810000821XA CN 200810000821 A CN200810000821 A CN 200810000821A CN 101231435 A CN101231435 A CN 101231435A
- Authority
- CN
- China
- Prior art keywords
- insulation course
- link
- film transistor
- thin
- display panel
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000010409 thin film Substances 0.000 title claims abstract description 35
- 239000000758 substrate Substances 0.000 claims abstract description 16
- 238000009413 insulation Methods 0.000 claims description 66
- 238000005520 cutting process Methods 0.000 claims description 6
- 238000005538 encapsulation Methods 0.000 claims description 3
- 239000011521 glass Substances 0.000 claims description 3
- 238000005530 etching Methods 0.000 abstract description 8
- 239000004973 liquid crystal related substance Substances 0.000 description 33
- 239000003990 capacitor Substances 0.000 description 14
- 239000012212 insulator Substances 0.000 description 10
- 238000004519 manufacturing process Methods 0.000 description 8
- 239000002245 particle Substances 0.000 description 8
- 238000010586 diagram Methods 0.000 description 7
- 238000005452 bending Methods 0.000 description 5
- 239000010408 film Substances 0.000 description 4
- 238000000034 method Methods 0.000 description 4
- 230000000717 retained effect Effects 0.000 description 4
- 239000003086 colorant Substances 0.000 description 3
- 230000003287 optical effect Effects 0.000 description 3
- 238000001259 photo etching Methods 0.000 description 3
- 238000003825 pressing Methods 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- 230000003321 amplification Effects 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 2
- 238000000354 decomposition reaction Methods 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 230000005611 electricity Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000003780 insertion Methods 0.000 description 2
- 230000037431 insertion Effects 0.000 description 2
- 239000011159 matrix material Substances 0.000 description 2
- 238000003199 nucleic acid amplification method Methods 0.000 description 2
- 238000002161 passivation Methods 0.000 description 2
- 230000011218 segmentation Effects 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 238000003466 welding Methods 0.000 description 2
- 206010034972 Photosensitivity reaction Diseases 0.000 description 1
- 102000011842 Serrate-Jagged Proteins Human genes 0.000 description 1
- 108010036039 Serrate-Jagged Proteins Proteins 0.000 description 1
- 229910004205 SiNX Inorganic materials 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- 238000000429 assembly Methods 0.000 description 1
- 230000000712 assembly Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 230000002708 enhancing effect Effects 0.000 description 1
- MRNHPUHPBOKKQT-UHFFFAOYSA-N indium;tin;hydrate Chemical compound O.[In].[Sn] MRNHPUHPBOKKQT-UHFFFAOYSA-N 0.000 description 1
- 230000001939 inductive effect Effects 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000036211 photosensitivity Effects 0.000 description 1
- 230000000750 progressive effect Effects 0.000 description 1
- 230000011514 reflex Effects 0.000 description 1
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1345—Conductors connecting electrodes to cell terminals
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1345—Conductors connecting electrodes to cell terminals
- G02F1/13458—Terminal pads
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/124—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits
Landscapes
- Physics & Mathematics (AREA)
- Nonlinear Science (AREA)
- Mathematical Physics (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Liquid Crystal (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
Abstract
Description
Claims (9)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR10-2007-0007443 | 2007-01-24 | ||
KR1020070007443A KR101304412B1 (ko) | 2007-01-24 | 2007-01-24 | 박막 트랜지스터 표시판 |
KR1020070007443 | 2007-01-24 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN101231435A true CN101231435A (zh) | 2008-07-30 |
CN101231435B CN101231435B (zh) | 2011-11-16 |
Family
ID=39640374
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN200810000821XA Expired - Fee Related CN101231435B (zh) | 2007-01-24 | 2008-01-22 | 薄膜晶体管阵列面板 |
Country Status (3)
Country | Link |
---|---|
US (1) | US7642553B2 (zh) |
KR (1) | KR101304412B1 (zh) |
CN (1) | CN101231435B (zh) |
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN106918938A (zh) * | 2017-04-28 | 2017-07-04 | 上海中航光电子有限公司 | 一种显示基板、其制作方法及显示装置 |
CN108389868A (zh) * | 2018-02-26 | 2018-08-10 | 武汉华星光电技术有限公司 | 阵列基板及显示面板 |
CN109560063A (zh) * | 2017-09-26 | 2019-04-02 | 三星显示有限公司 | 电子面板、显示设备和用于制造显示设备的方法 |
CN110610902A (zh) * | 2019-09-25 | 2019-12-24 | 昆山国显光电有限公司 | 屏体制作方法和显示装置 |
CN111077707A (zh) * | 2019-12-18 | 2020-04-28 | Tcl华星光电技术有限公司 | 一种阵列基板和显示面板 |
CN112835232A (zh) * | 2016-06-30 | 2021-05-25 | 乐金显示有限公司 | 具有延伸至非显示区域的信号线的显示装置 |
Families Citing this family (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100759759B1 (ko) * | 2006-04-27 | 2007-09-20 | 삼성전자주식회사 | 표시장치와 그 제조방법 |
JP2011252935A (ja) * | 2008-09-26 | 2011-12-15 | Sharp Corp | 回路基板及び表示装置 |
CN102203841B (zh) * | 2008-11-26 | 2014-01-22 | 夏普株式会社 | 显示装置 |
EP2355074A4 (en) * | 2008-12-05 | 2012-05-30 | Sharp Kk | DISPLAY DEVICE SUBSTRATE AND DISPLAY DEVICE |
KR101065409B1 (ko) * | 2009-11-04 | 2011-09-16 | 삼성모바일디스플레이주식회사 | 유기 발광 조명 장치 |
KR101635858B1 (ko) * | 2010-03-23 | 2016-07-05 | 삼성디스플레이 주식회사 | 표시 기판 및 이의 제조 방법 |
KR101971066B1 (ko) * | 2012-11-01 | 2019-04-24 | 삼성디스플레이 주식회사 | 표시 장치 및 본딩 테스트 시스템 |
US10663821B2 (en) * | 2015-11-06 | 2020-05-26 | Sharp Kabushiki Kaisha | Display board having insulating films and terminals, and display device including the same |
KR20190100996A (ko) * | 2018-02-21 | 2019-08-30 | 삼성디스플레이 주식회사 | 평판표시장치 |
KR20200057141A (ko) * | 2018-11-15 | 2020-05-26 | 삼성디스플레이 주식회사 | 표시 장치 |
CN113341600B (zh) * | 2021-05-25 | 2022-05-06 | 厦门天马微电子有限公司 | 显示面板及显示装置 |
Family Cites Families (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3029531B2 (ja) * | 1994-03-02 | 2000-04-04 | シャープ株式会社 | 液晶表示装置 |
KR100244449B1 (ko) * | 1997-02-11 | 2000-02-01 | 구본준 | 박막 트랜지스터 검사용 단락 배선을 갖는 액정 표시 장치와 그 제조 방법(liquid crystal display having shorting bar for testing tft and method for manufacturing the same) |
JPH10268339A (ja) | 1997-03-28 | 1998-10-09 | Advanced Display:Kk | アクティブマトリクス基板、該基板を用いた液晶表示装置ならびに配線の剥離および断線を防止する方法 |
JP3767154B2 (ja) * | 1997-06-17 | 2006-04-19 | セイコーエプソン株式会社 | 電気光学装置用基板、電気光学装置、電子機器及び投写型表示装置 |
KR100695303B1 (ko) * | 2000-10-31 | 2007-03-14 | 삼성전자주식회사 | 제어 신호부 및 그 제조 방법과 이를 포함하는 액정 표시장치 및 그 제조 방법 |
JP2002189428A (ja) | 2000-12-20 | 2002-07-05 | Matsushita Electric Ind Co Ltd | アレイ基板及びそれを用いた液晶表示装置 |
KR100831280B1 (ko) | 2001-12-26 | 2008-05-22 | 엘지디스플레이 주식회사 | 액정표시장치 |
KR100867501B1 (ko) | 2002-10-14 | 2008-11-06 | 하이디스 테크놀로지 주식회사 | 액정 디스플레이 장치 |
KR100941314B1 (ko) | 2002-11-08 | 2010-02-11 | 엘지디스플레이 주식회사 | 액정표시장치의 어레이 기판 및 그 제조방법 |
JP4211428B2 (ja) | 2003-02-21 | 2009-01-21 | 三菱電機株式会社 | マトリクスアレイ基板 |
KR100965095B1 (ko) | 2003-10-28 | 2010-06-23 | 엘지디스플레이 주식회사 | 액정표시장치 |
KR101025057B1 (ko) | 2003-12-30 | 2011-03-25 | 엘지디스플레이 주식회사 | 정전기 방지회로를 포함하는 액정표시소자 |
TW200530655A (en) | 2004-03-05 | 2005-09-16 | Toppoly Optoelectronics Corp | Display panel, lead pad structure, lead pad array structure and method of fabricating the same |
KR100698062B1 (ko) | 2004-04-01 | 2007-03-23 | 엘지.필립스 엘시디 주식회사 | 액정표시소자 및 그 제조방법 |
KR101048703B1 (ko) | 2004-07-30 | 2011-07-14 | 엘지디스플레이 주식회사 | 액정표시장치 |
-
2007
- 2007-01-24 KR KR1020070007443A patent/KR101304412B1/ko active IP Right Grant
- 2007-10-31 US US11/981,914 patent/US7642553B2/en not_active Expired - Fee Related
-
2008
- 2008-01-22 CN CN200810000821XA patent/CN101231435B/zh not_active Expired - Fee Related
Cited By (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN112835232A (zh) * | 2016-06-30 | 2021-05-25 | 乐金显示有限公司 | 具有延伸至非显示区域的信号线的显示装置 |
CN106918938A (zh) * | 2017-04-28 | 2017-07-04 | 上海中航光电子有限公司 | 一种显示基板、其制作方法及显示装置 |
CN106918938B (zh) * | 2017-04-28 | 2020-06-16 | 上海中航光电子有限公司 | 一种显示基板、其制作方法及显示装置 |
CN109560063A (zh) * | 2017-09-26 | 2019-04-02 | 三星显示有限公司 | 电子面板、显示设备和用于制造显示设备的方法 |
CN109560063B (zh) * | 2017-09-26 | 2023-05-12 | 三星显示有限公司 | 电子面板、显示设备和用于制造显示设备的方法 |
CN108389868A (zh) * | 2018-02-26 | 2018-08-10 | 武汉华星光电技术有限公司 | 阵列基板及显示面板 |
CN110610902A (zh) * | 2019-09-25 | 2019-12-24 | 昆山国显光电有限公司 | 屏体制作方法和显示装置 |
CN110610902B (zh) * | 2019-09-25 | 2021-12-14 | 昆山国显光电有限公司 | 屏体制作方法和显示装置 |
CN111077707A (zh) * | 2019-12-18 | 2020-04-28 | Tcl华星光电技术有限公司 | 一种阵列基板和显示面板 |
US11393850B2 (en) | 2019-12-18 | 2022-07-19 | Tcl China Star Optoelectronics Technology Co., Ltd. | Array substrate and display panel |
Also Published As
Publication number | Publication date |
---|---|
US20080173900A1 (en) | 2008-07-24 |
KR101304412B1 (ko) | 2013-09-05 |
CN101231435B (zh) | 2011-11-16 |
US7642553B2 (en) | 2010-01-05 |
KR20080069783A (ko) | 2008-07-29 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN101231435B (zh) | 薄膜晶体管阵列面板 | |
CN103901641B (zh) | 用于显示装置的阵列基板 | |
CN106992197B (zh) | 柔性显示器及其制造方法 | |
EP2660650B1 (en) | Liquid crystal display device and method of fabricating the same | |
CN100456097C (zh) | 液晶显示装置及其制造方法 | |
US7855767B2 (en) | Transflective liquid crystal display | |
US20100109993A1 (en) | Liquid crystal display and method of manufacturing the same | |
CN101135798A (zh) | 液晶显示装置 | |
CN103913905A (zh) | 显示装置 | |
US8218098B2 (en) | Display panel with an electrostatic protection member for a liquid crystal display device | |
CN103424944A (zh) | 显示装置 | |
US20050072597A1 (en) | Bonding pad structure for a display device and fabrication method thereof | |
KR20080020168A (ko) | 어레이 기판 및 이를 갖는 표시패널 | |
CN104835420A (zh) | 显示装置及其制造方法 | |
JP2015014790A (ja) | 液晶表示装置 | |
CN101872092A (zh) | 液晶显示面板 | |
CN105321958A (zh) | 薄膜晶体管阵列面板及其制造方法 | |
CN101320148A (zh) | 显示基板及其制造方法以及具有该基板的显示器 | |
CN1808251A (zh) | 用于液晶显示器的薄膜晶体管阵列面板及液晶显示器 | |
CN102317995B (zh) | 有源矩阵基板和显示装置 | |
KR20060093573A (ko) | 어레이 기판, 이를 갖는 표시장치 및 이의 제조방법 | |
KR20080102730A (ko) | 표시장치 | |
KR101784445B1 (ko) | 액정표시장치용 어레이 기판 | |
US8648976B2 (en) | Display device and manufacturing method thereof | |
KR20140088810A (ko) | 박막 트랜지스터 표시판 및 그 제조 방법 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
ASS | Succession or assignment of patent right |
Owner name: SAMSUNG DISPLAY CO., LTD. Free format text: FORMER OWNER: SAMSUNG ELECTRONICS CO., LTD. Effective date: 20121226 |
|
C41 | Transfer of patent application or patent right or utility model | ||
TR01 | Transfer of patent right |
Effective date of registration: 20121226 Address after: Gyeonggi Do, South Korea Patentee after: Samsung Display Co.,Ltd. Address before: Gyeonggi Do, South Korea Patentee before: Samsung Electronics Co.,Ltd. |
|
CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20111116 Termination date: 20210122 |
|
CF01 | Termination of patent right due to non-payment of annual fee |