CN101145505A - 基板处理装置和基板处理方法 - Google Patents
基板处理装置和基板处理方法 Download PDFInfo
- Publication number
- CN101145505A CN101145505A CNA2007101537201A CN200710153720A CN101145505A CN 101145505 A CN101145505 A CN 101145505A CN A2007101537201 A CNA2007101537201 A CN A2007101537201A CN 200710153720 A CN200710153720 A CN 200710153720A CN 101145505 A CN101145505 A CN 101145505A
- Authority
- CN
- China
- Prior art keywords
- substrate
- splash guard
- board treatment
- treatment
- treatment fluid
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000000758 substrate Substances 0.000 title claims abstract description 680
- 238000003672 processing method Methods 0.000 title claims description 16
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 241
- 239000007788 liquid Substances 0.000 claims abstract description 56
- 230000002093 peripheral effect Effects 0.000 claims description 237
- 239000012530 fluid Substances 0.000 claims description 144
- 239000011810 insulating material Substances 0.000 claims description 39
- 230000007246 mechanism Effects 0.000 claims description 24
- 239000000463 material Substances 0.000 claims description 23
- 230000003028 elevating effect Effects 0.000 claims description 19
- 239000011347 resin Substances 0.000 claims description 18
- 229920005989 resin Polymers 0.000 claims description 18
- 229910052751 metal Inorganic materials 0.000 claims description 13
- 239000002184 metal Substances 0.000 claims description 13
- 239000002657 fibrous material Substances 0.000 claims description 12
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 7
- 235000008429 bread Nutrition 0.000 claims description 6
- 229910052799 carbon Inorganic materials 0.000 claims description 5
- 238000013459 approach Methods 0.000 claims description 3
- 238000005507 spraying Methods 0.000 claims 2
- 230000006698 induction Effects 0.000 abstract description 22
- 238000004519 manufacturing process Methods 0.000 abstract description 12
- 239000004020 conductor Substances 0.000 abstract description 11
- 239000012772 electrical insulation material Substances 0.000 abstract 1
- 235000014347 soups Nutrition 0.000 description 81
- 238000004140 cleaning Methods 0.000 description 21
- 238000000034 method Methods 0.000 description 19
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 description 14
- 239000007921 spray Substances 0.000 description 11
- 230000009471 action Effects 0.000 description 10
- 230000005764 inhibitory process Effects 0.000 description 9
- 230000008569 process Effects 0.000 description 9
- 229910002092 carbon dioxide Inorganic materials 0.000 description 7
- 239000001569 carbon dioxide Substances 0.000 description 6
- 230000008859 change Effects 0.000 description 6
- 230000000052 comparative effect Effects 0.000 description 6
- 238000010586 diagram Methods 0.000 description 6
- 238000005516 engineering process Methods 0.000 description 6
- 239000004065 semiconductor Substances 0.000 description 6
- 239000004809 Teflon Substances 0.000 description 5
- 229920006362 Teflon® Polymers 0.000 description 5
- 230000015572 biosynthetic process Effects 0.000 description 5
- 238000005755 formation reaction Methods 0.000 description 5
- 230000007723 transport mechanism Effects 0.000 description 5
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 description 4
- 238000005260 corrosion Methods 0.000 description 4
- 230000007797 corrosion Effects 0.000 description 4
- 239000000654 additive Substances 0.000 description 3
- 230000000996 additive effect Effects 0.000 description 3
- 238000005452 bending Methods 0.000 description 3
- 239000012535 impurity Substances 0.000 description 3
- 239000002245 particle Substances 0.000 description 3
- NLXLAEXVIDQMFP-UHFFFAOYSA-N Ammonia chloride Chemical compound [NH4+].[Cl-] NLXLAEXVIDQMFP-UHFFFAOYSA-N 0.000 description 2
- 241000628997 Flos Species 0.000 description 2
- 230000015556 catabolic process Effects 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 229910021397 glassy carbon Inorganic materials 0.000 description 2
- 238000009413 insulation Methods 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 239000004033 plastic Substances 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- 238000002360 preparation method Methods 0.000 description 2
- 229910010271 silicon carbide Inorganic materials 0.000 description 2
- 230000003068 static effect Effects 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 235000019270 ammonium chloride Nutrition 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 230000033228 biological regulation Effects 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 229910010293 ceramic material Inorganic materials 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000010790 dilution Methods 0.000 description 1
- 239000012895 dilution Substances 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000011010 flushing procedure Methods 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 238000009832 plasma treatment Methods 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 238000011084 recovery Methods 0.000 description 1
- 230000008439 repair process Effects 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 238000004381 surface treatment Methods 0.000 description 1
- -1 thus Substances 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
- 230000010148 water-pollination Effects 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
- H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
- H01L21/67051—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly spraying means, e.g. nozzles
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
- B08B3/04—Cleaning involving contact with liquid
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/34—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies not provided for in groups H01L21/0405, H01L21/0445, H01L21/06, H01L21/16 and H01L21/18 with or without impurities, e.g. doping materials
- H01L21/46—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/428
- H01L21/461—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/428 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Cleaning Or Drying Semiconductors (AREA)
Abstract
Description
Claims (43)
Applications Claiming Priority (9)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2006251637 | 2006-09-15 | ||
JP2006-251637 | 2006-09-15 | ||
JP2006251637 | 2006-09-15 | ||
JP2006-328648 | 2006-12-05 | ||
JP2006327938 | 2006-12-05 | ||
JP2006328648 | 2006-12-05 | ||
JP2006328648A JP4823036B2 (ja) | 2006-09-15 | 2006-12-05 | 基板処理装置 |
JP2006-327938 | 2006-12-05 | ||
JP2006327938A JP4651608B2 (ja) | 2006-12-05 | 2006-12-05 | 基板処理装置および基板処理方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN101145505A true CN101145505A (zh) | 2008-03-19 |
CN101145505B CN101145505B (zh) | 2011-07-27 |
Family
ID=39189168
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN2007101537201A Expired - Fee Related CN101145505B (zh) | 2006-09-15 | 2007-09-14 | 基板处理装置和基板处理方法 |
Country Status (4)
Country | Link |
---|---|
US (5) | US8815048B2 (zh) |
KR (2) | KR100900628B1 (zh) |
CN (1) | CN101145505B (zh) |
TW (1) | TWI358758B (zh) |
Cited By (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN106824884A (zh) * | 2017-03-31 | 2017-06-13 | 贵州大学 | 一种硅片翻转冲洗装置 |
CN109065485A (zh) * | 2018-09-04 | 2018-12-21 | 江苏晶品新能源科技有限公司 | 一种单晶硅生产线用硅片高效清洗装置 |
CN109698149A (zh) * | 2018-12-27 | 2019-04-30 | 北京半导体专用设备研究所(中国电子科技集团公司第四十五研究所) | 防溅装置及腐蚀工艺反应设备 |
CN109716489A (zh) * | 2016-09-23 | 2019-05-03 | 株式会社斯库林集团 | 基板处理装置及基板处理方法 |
CN111383961A (zh) * | 2018-12-25 | 2020-07-07 | 东京毅力科创株式会社 | 基板处理装置和基板处理方法 |
WO2020143247A1 (zh) * | 2019-01-09 | 2020-07-16 | 昆山国显光电有限公司 | 清洗设备及清洗方法 |
CN111630635A (zh) * | 2018-01-23 | 2020-09-04 | 株式会社斯库林集团 | 基板处理方法及基板处理装置 |
CN111890218A (zh) * | 2020-07-04 | 2020-11-06 | 刘永 | 一种旋转升降的化学机械研磨防溅罩 |
Families Citing this family (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100900628B1 (ko) * | 2006-09-15 | 2009-06-02 | 다이닛뽕스크린 세이조오 가부시키가이샤 | 기판처리장치 및 기판처리방법 |
JP5349944B2 (ja) * | 2008-12-24 | 2013-11-20 | 株式会社荏原製作所 | 基板処理装置の液飛散防止カップ、基板処理装置、及びその運転方法 |
JP6239893B2 (ja) * | 2013-08-07 | 2017-11-29 | 株式会社荏原製作所 | ウェット処理装置及びこれを備えた基板処理装置 |
US9779979B2 (en) * | 2014-02-24 | 2017-10-03 | Lam Research Ag | Apparatus for liquid treatment of wafer shaped articles |
JP6661640B2 (ja) * | 2014-12-19 | 2020-03-11 | アプライド マテリアルズ インコーポレイテッドApplied Materials,Incorporated | 化学機械研磨ツール用の構成要素 |
JP2017077528A (ja) * | 2015-10-20 | 2017-04-27 | 信越化学工業株式会社 | フォトマスク関連基板に用いる基板洗浄装置及び基板洗浄方法 |
TWI638394B (zh) * | 2016-07-25 | 2018-10-11 | 斯庫林集團股份有限公司 | 基板處理裝置 |
JP6840061B2 (ja) * | 2017-09-22 | 2021-03-10 | 株式会社Screenホールディングス | 基板保持装置および基板処理装置 |
JP2020035794A (ja) * | 2018-08-27 | 2020-03-05 | キオクシア株式会社 | 基板処理装置および半導体装置の製造方法 |
US20200176278A1 (en) * | 2018-12-04 | 2020-06-04 | Nanya Technology Corporation | Wafer drying equipment and method thereof |
JP7169865B2 (ja) * | 2018-12-10 | 2022-11-11 | 東京エレクトロン株式会社 | 基板処理装置および基板処理方法 |
KR102338417B1 (ko) * | 2019-07-08 | 2021-12-10 | 세메스 주식회사 | 기판 처리 장치 |
CN112090625A (zh) * | 2020-07-29 | 2020-12-18 | 深圳市永盛旺机械设备有限公司 | 一种防飞漆喷涂夹具 |
JP2022124070A (ja) * | 2021-02-15 | 2022-08-25 | 株式会社Screenホールディングス | 基板処理装置、および、筒状ガードの加工方法 |
Family Cites Families (19)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3116297B2 (ja) * | 1994-08-03 | 2000-12-11 | 東京エレクトロン株式会社 | 処理方法及び処理装置 |
US5689749A (en) * | 1994-08-31 | 1997-11-18 | Tokyo Electron Limited | Apparatus for developing a resist-coated substrate |
TW494714B (en) * | 1995-04-19 | 2002-07-11 | Tokyo Electron Ltd | Method of processing substrate and apparatus for processing substrate |
US5725663A (en) * | 1996-01-31 | 1998-03-10 | Solitec Wafer Processing, Inc. | Apparatus for control of contamination in spin systems |
JPH09289156A (ja) * | 1996-04-19 | 1997-11-04 | Dainippon Screen Mfg Co Ltd | 基板回転式処理方法及び装置 |
JP2003264167A (ja) | 1996-10-07 | 2003-09-19 | Tokyo Electron Ltd | 液処理方法及びその装置 |
US5997653A (en) * | 1996-10-07 | 1999-12-07 | Tokyo Electron Limited | Method for washing and drying substrates |
JPH10258249A (ja) | 1997-03-19 | 1998-09-29 | Dainippon Screen Mfg Co Ltd | 回転式基板処理装置 |
TW402737B (en) * | 1997-05-27 | 2000-08-21 | Tokyo Electron Ltd | Cleaning/drying device and method |
JP3892579B2 (ja) | 1998-03-27 | 2007-03-14 | 大日本スクリーン製造株式会社 | 基板回転式処理装置 |
JP2003100687A (ja) | 2001-09-21 | 2003-04-04 | Ebara Corp | 基板処理装置及びその洗浄方法 |
JP2004063201A (ja) | 2002-07-26 | 2004-02-26 | Shibaura Mechatronics Corp | 基板の処理装置 |
JP2004356299A (ja) | 2003-05-28 | 2004-12-16 | Tokyo Electron Ltd | 液処理装置およびその接液部に用いられる部品ならびにその部品の製造方法 |
JP4488506B2 (ja) * | 2004-08-30 | 2010-06-23 | 大日本スクリーン製造株式会社 | 基板処理装置および基板処理方法 |
JP4410076B2 (ja) * | 2004-10-07 | 2010-02-03 | 東京エレクトロン株式会社 | 現像処理装置 |
JP2006147672A (ja) | 2004-11-17 | 2006-06-08 | Dainippon Screen Mfg Co Ltd | 基板回転式処理装置 |
US7311781B2 (en) | 2004-11-17 | 2007-12-25 | Dainippon Screen Mgf, Co., Ltd | Substrate rotation type treatment apparatus |
KR100900628B1 (ko) * | 2006-09-15 | 2009-06-02 | 다이닛뽕스크린 세이조오 가부시키가이샤 | 기판처리장치 및 기판처리방법 |
JP2008183532A (ja) * | 2007-01-31 | 2008-08-14 | Dainippon Screen Mfg Co Ltd | 基板処理装置および基板処理方法 |
-
2007
- 2007-08-31 KR KR1020070088056A patent/KR100900628B1/ko active IP Right Grant
- 2007-09-11 US US11/853,231 patent/US8815048B2/en active Active
- 2007-09-13 TW TW096134198A patent/TWI358758B/zh not_active IP Right Cessation
- 2007-09-14 CN CN2007101537201A patent/CN101145505B/zh not_active Expired - Fee Related
-
2008
- 2008-12-12 KR KR1020080126420A patent/KR100936559B1/ko active IP Right Grant
-
2014
- 2014-07-24 US US14/340,218 patent/US9852931B2/en active Active
-
2017
- 2017-11-30 US US15/827,077 patent/US10629459B2/en not_active Expired - Fee Related
- 2017-11-30 US US15/826,899 patent/US10468273B2/en not_active Expired - Fee Related
-
2019
- 2019-10-04 US US16/593,105 patent/US20200035518A1/en not_active Abandoned
Cited By (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN109716489A (zh) * | 2016-09-23 | 2019-05-03 | 株式会社斯库林集团 | 基板处理装置及基板处理方法 |
CN109716489B (zh) * | 2016-09-23 | 2022-11-15 | 株式会社斯库林集团 | 基板处理装置及基板处理方法 |
CN106824884A (zh) * | 2017-03-31 | 2017-06-13 | 贵州大学 | 一种硅片翻转冲洗装置 |
CN111630635A (zh) * | 2018-01-23 | 2020-09-04 | 株式会社斯库林集团 | 基板处理方法及基板处理装置 |
CN109065485A (zh) * | 2018-09-04 | 2018-12-21 | 江苏晶品新能源科技有限公司 | 一种单晶硅生产线用硅片高效清洗装置 |
CN111383961A (zh) * | 2018-12-25 | 2020-07-07 | 东京毅力科创株式会社 | 基板处理装置和基板处理方法 |
CN111383961B (zh) * | 2018-12-25 | 2023-12-08 | 东京毅力科创株式会社 | 基板处理装置和基板处理方法 |
CN109698149A (zh) * | 2018-12-27 | 2019-04-30 | 北京半导体专用设备研究所(中国电子科技集团公司第四十五研究所) | 防溅装置及腐蚀工艺反应设备 |
WO2020143247A1 (zh) * | 2019-01-09 | 2020-07-16 | 昆山国显光电有限公司 | 清洗设备及清洗方法 |
US11642706B2 (en) | 2019-01-09 | 2023-05-09 | Kunshan Go-Visionox Opto-Electronics Co. Ltd | Cleaning device |
CN111890218A (zh) * | 2020-07-04 | 2020-11-06 | 刘永 | 一种旋转升降的化学机械研磨防溅罩 |
CN111890218B (zh) * | 2020-07-04 | 2021-09-03 | 林燕 | 一种旋转升降的化学机械研磨防溅罩 |
Also Published As
Publication number | Publication date |
---|---|
US20140352742A1 (en) | 2014-12-04 |
KR100936559B1 (ko) | 2010-01-13 |
US20180082859A1 (en) | 2018-03-22 |
US10468273B2 (en) | 2019-11-05 |
US20180082860A1 (en) | 2018-03-22 |
US9852931B2 (en) | 2017-12-26 |
US10629459B2 (en) | 2020-04-21 |
US8815048B2 (en) | 2014-08-26 |
US20080070418A1 (en) | 2008-03-20 |
CN101145505B (zh) | 2011-07-27 |
KR20090018772A (ko) | 2009-02-23 |
KR20080025302A (ko) | 2008-03-20 |
KR100900628B1 (ko) | 2009-06-02 |
US20200035518A1 (en) | 2020-01-30 |
TW200830388A (en) | 2008-07-16 |
TWI358758B (en) | 2012-02-21 |
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