CN111383961A - 基板处理装置和基板处理方法 - Google Patents
基板处理装置和基板处理方法 Download PDFInfo
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Abstract
本发明提供一种能够适当地进行基板表面的蚀刻处理的基板处理装置和基板处理方法。所述基板处理装置具有:保持部,其保持基板;处理液供给部,其对被保持部保持着的所述基板供给处理液;以及电阻值变更机构,其能够变更与所述基板接触的所述保持部的电阻。
Description
技术领域
本公开涉及一种基板处理装置和基板处理方法。
背景技术
在专利文献1中示出一种在对旋转的基板供给处理液来进行蚀刻等液处理时利用可动构件保持基板的周缘部的结构。
现有技术文献
专利文献
专利文献1:日本特开2012-004320号公报
发明内容
发明要解决的问题
本公开提供一种能够适当地进行基板表面的蚀刻处理的技术。
用于解决问题的方案
基于本公开的一个方式的基板处理装置具有:保持部,其保持基板;处理液供给部,其对被所述保持部保持着的所述基板供给处理液;以及电阻值变更机构,其能够变更与所述基板接触的所述保持部的电阻。
发明的效果
根据一个例示性的实施方式,能够适当地进行基板表面的蚀刻处理。
附图说明
图1是表示一个例示性的实施方式所涉及的基板处理系统的图。
图2是表示一个例示性的实施方式所涉及的基板处理装置的图。
图3是说明一个例示性的实施方式所涉及的基板处理装置中的旋转板和支承板的附近的图。
图4是说明一个例示性的实施方式所涉及的基板处理装置中的可动构件的配置的图。
图5的(A)、图5的(B)、图5的(C)是说明一个例示性的实施方式所涉及的基板处理装置中的可动构件的结构例的图。
图6的(A)、图6的(B)是说明一个例示性的实施方式所涉及的基板处理装置中的可动构件的结构例的图。
具体实施方式
下面,参照附图来详细地说明各种例示性的实施方式。此外,在各附图中对相同或相当的部分标注相同的标记。
[基板处理系统的结构]
图1是表示一个实施方式所涉及的基板处理系统的概要结构的图。在以下,为了明确位置关系,规定相互正交的X轴、Y轴及Z轴,将Z轴正方向设为铅垂向上的方向。
如图1所示,基板处理系统1具备搬入搬出站2和处理站3。搬入搬出站2与处理站3邻接地设置。
搬入搬出站2具备承载件载置部11和搬送部12。在承载件载置部11上载置有多个承载件C,所述多个承载件C用于将多张基板、在本实施方式中为半导体晶圆(以下称为晶圆W)以水平状态收容。
搬送部12与承载件载置部11邻接地设置,在搬送部12的内部具备基板搬送装置13和交接部14。基板搬送装置13具备用于保持晶圆W的晶圆保持机构。另外,基板搬送装置13能够沿水平方向和铅垂方向移动并以铅垂轴为中心进行转动,其使用晶圆保持机构在承载件C与交接部14之间搬送晶圆W。
处理站3与搬送部12邻接地设置。处理站3具备搬送部15和多个处理单元16。多个处理单元16以排列在搬送部15的两侧的方式设置。
搬送部15在内部具备基板搬送装置17。基板搬送装置17具备用于保持晶圆W的晶圆保持机构。另外,基板搬送装置17能够沿水平方向和铅垂方向移动并以铅垂轴为中心进行转动,其使用晶圆保持机构在交接部14与处理单元16之间搬送晶圆W。
处理单元16根据后述的控制装置4的控制部18的控制,对由基板搬送装置17搬送的晶圆W进行规定的基板处理。
另外,基板处理系统1具备控制装置4。控制装置4例如是计算机,其具备控制部18和存储部19。在存储部19中保存有用于控制在基板处理系统1中执行的各种处理的程序。控制部18通过读取并执行存储部19中存储的程序来控制基板处理系统1的动作。
此外,该程序可以是记录在可由计算机读取的存储介质中且从该存储介质安装到控制装置4的存储部19中的程序。作为可由计算机读取的存储介质,例如存在硬盘(HD)、软盘(FD)、光盘(CD)、光磁盘(MO)、存储卡等。
在如上述那样构成的基板处理系统1中,首先,搬入搬出站2的基板搬送装置13将晶圆W自载置于承载件载置部11的承载件C取出,并将取出的晶圆W载置于交接部14。利用处理站3的基板搬送装置17将载置于交接部14的晶圆W自交接部14取出后搬入处理单元16。
在利用处理单元16对被搬入处理单元16的晶圆W进行处理之后,利用基板搬送装置17将该晶圆W自处理单元16搬出后载置于交接部14。然后,利用基板搬送装置13将载置于交接部14的处理完毕的晶圆W返回到承载件载置部11的承载件C。
[基板处理装置的结构]
参照图2和图3来说明基板处理系统1所包括的基板处理装置10的结构。基板处理装置10设置于基板处理系统1的处理单元16。图2是基板处理装置10的纵剖截面图,图3是表示基板处理装置10中包括的旋转板和支承板的结构的分解立体图。
如图2的纵剖截面图所示,基板处理装置10具备旋转板20、支承板30、可动构件51以及限制部52。旋转板20设置于构成铅垂轴的旋转轴25的上部,并且旋转自如。支承板30通过设置于其上表面侧的突起部31来支承晶圆W(基板),该支承板30被载置于旋转板20,由此与该旋转板20一体地旋转。限制部52用于限制晶圆W的侧周面,可动构件51朝向该限制部52按压晶圆W,由此保持该晶圆W。在该基板处理装置10中,支承板30相当于本实施方式的上部旋转板,旋转板相当于下部旋转板。另外,在以下的实施方式中,可动构件51作为保持晶圆W的保持部发挥功能。
旋转板20是构成为直径比晶圆W的直径大的圆板。在旋转板20的上表面设置有排液槽21,所述排液槽21用于捕获进入旋转板20与支承板30之间的清洗液(处理液)并将捕获到的清洗液(处理液)从排出孔22排出。排液槽21沿旋转板20的周向设置。排出孔22从排液槽21的外侧的底面朝向旋转板20的径向的外侧向下伸出,并且该排出孔22的端部在旋转板20的外周面具有开口。因此,排出孔22能够利用离心力将被捕获至排液槽21的清洗液向外部排出。
在旋转板20的下表面侧的中央部连接有沿铅垂方向延伸的圆筒状的旋转轴25。旋转轴25被插入至使该旋转轴25旋转的作为旋转驱动部的旋转马达61中。通过该旋转马达61来使旋转轴25旋转,由此旋转板20能够在旋转轴25的上部以大致水平的状态旋转。旋转马达61由控制部18进行控制。
支承板30是具有与晶圆W大致相同的大小的圆板。在支承板30的下表面侧形成有能够与设置于旋转板20的凹部(未图示)嵌合的凸部(未图示),当将支承板30载置在旋转板20上时,凹部与凸部嵌合,由此旋转板20的上表面与支承板30的下表面相接。
在支承板30的上表面,沿支承板30的外周缘设置有多个突起部31,通过在这些突起部31上载置晶圆W,能够将晶圆W支承在从支承板30浮起的位置处。
另外,在设置于旋转板20的下表面侧的已述的旋转轴25中,以沿上下方向贯通圆筒形状的旋转轴25的方式插入有清洗液供给管71。清洗液供给管71的上端侧贯通旋转板20和支承板30后延伸至支承板30的上表面。在清洗液供给管71的内部,沿清洗液供给管71延伸的方向形成有多个(例如四个)清洗液供给通路711,能够切换地供给作为清洗液的各种药液、冲洗液。作为清洗液供给管71,可以设置供N2气体等气体通过的气体供给通路。
在清洗液供给管71的上端部设置有形成为小型的圆盘形状的下表面用喷嘴73。能够从设置于该下表面用喷嘴73的前端部的喷出孔731朝向被保持在从支承板30浮起的位置处的晶圆W的背面喷出清洗液。清洗液供给管71和下表面用喷嘴73相对于旋转板20、旋转轴25以及支承板30独立,即使在旋转板20和支承板30旋转的情况下,所述清洗液供给管71和下表面用喷嘴73也在静止的状态下进行清洗液的供给。清洗液供给管71、下表面用喷嘴73相当于本实施方式的处理液供给部。
在支承板30的下表面侧且图3中用虚线表示的三个部位连接有作为突出构件的连结轴35(参照图2)。各连结轴35被插入于在旋转板20的下表面侧设置的构成贯通孔的鞘部内从而被固定于支承板30的下表面,并且所述各连结轴35与压缩弹簧36连接。
在通常状态下,向该压缩弹簧36的延伸方向作用有弹簧的回复力,由此支承板30被向下方侧拉拽,从而支承板移动至图2所示的位置且载置在旋转板20上。与此相对地,当向上推连结轴35时,压缩弹簧36被压缩,能够使支承板30成为从旋转板20浮起的状态。当使支承板30从旋转板20浮起时,突起部31的前端突出至比后述的中杯42靠上方的高度位置处,因此能够以不与其它设备发生干扰的方式与外部的搬送臂之间进行晶圆W的交接。
此外,用于通过向上推连结轴35的下端部来使支承板30进行升降的三个上推构件65经由升降构件64固定于清洗液供给管71。并且,清洗液供给管71与构成为通过升降马达62升降自如的连结构件63连结。升降马达62由控制部18进行控制。利用升降马达62使连结构件63上升,由此上推构件65上升,连结轴35被该上推构件65向上推从而能够使支承板30移动至从旋转板20浮起的位置。相反地,当使上推构件65下降至比连结轴35的下端更靠下方侧的位置时,支承板30下降且成为被载置于旋转板20的状态。在该观点中,升降马达62、连结构件63、清洗液供给管71、升降构件64、上推构件65作为支承板30的升降机构发挥功能。
另外,在晶圆W的上表面侧设置有用于供给清洗液等处理液的上表面用喷嘴74。上表面用喷嘴74安装于臂75的前端部。通过使臂75移动,能够使上表面用喷嘴74在晶圆W中央部的上方的用于进行清洗液的供给的供给位置与从晶圆W上退避后的退避位置之间移动。
在旋转板20沿周缘部设置有中杯42。中杯42具有接受从晶圆W飞散出的清洗液的功能。中杯42为其纵截面呈圆弧的圆顶状,并且在该中杯42的上表面设置有用于使被支承板30支承来进行升降的晶圆W通过的开口部。另外,中杯42呈其下端缘从旋转板20的上表面浮起的状态。因此,被供给至晶圆W的清洗液从形成于中杯42的下端缘与旋转板20的上表面之间的间隙向中杯42之外排出。
在中杯42的内侧设置有沿被支承板30保持的晶圆W的外周缘配置的环形状的内杯41。中杯42和内杯41通过螺栓44被紧固于旋转板20。因此,当使旋转板20旋转时,中杯42和内杯41也与支承板30同样地旋转。
在中杯42的外侧的区域配置有以从外侧覆盖旋转板20和内杯41的方式形成的外杯43。从中杯42与旋转板20之间排出的清洗液能够被该外杯43接住并通过排液线路431向外部排出。
基板处理装置10具备用于限制晶圆W的侧周面的限制部52和朝向限制部52按压晶圆W的可动构件51(保持部),以保持在旋转板20和支承板30上旋转的晶圆W。
可动构件51是大致L字形状的构件,具备被推压部515和立起部511,该被推压部515是从晶圆W的周缘部朝向中央部延伸的下端部,该立起部511是从该被推压部515的端部连续地向上方伸出的上端部。
设置于可动构件51的立起部511具备在支承板30被载置在旋转板20上时从晶圆W的侧方接近晶圆W来向限制部52侧按压晶圆W的侧周面的功能。在基板处理装置10设置一个或多个可动构件51。在本实施方式中,对可动构件51为三个的情况进行说明。在图1中,示出三个可动构件51中的一个可动构件51。
也可以是,在立起部511的前端512且与晶圆W的侧周面相向的位置形成有槽。在设置有槽的情况下,通过将晶圆W的外周缘部嵌入该槽中,能够将该晶圆W的侧周面向限制部52侧按压来进行保持。此外,也可以在立起部511的前端设置槽,通过将晶圆W的侧周面向限制部52侧按压来利用可动构件51和限制部52保持该晶圆W即可。
可动构件51的被推压部515通常以收纳于在旋转板20形成的槽部(未图示)内的方式设置。另外,在支承板30从旋转板20浮起的状态下,被推压部515被朝向从上述的槽部飞出的方向施力。为了实现被推压部515的该功能,可动构件51被轴支承为绕水平方向的转动轴513转动自如,以使被推压部515中的靠旋转板20的中心部侧的端部跃起。
可动构件51的侧面与卷绕于转动轴513的扭簧状的弹簧构件514连接。弹簧构件514被朝向使立起部511向旋转板20的径向外侧倾倒的方向施力,其结果是,呈被推压部515的端部跃起而从形成于旋转板20的槽部飞出的状态。
限制部52被固定于预先决定的位置(与可动构件51隔着晶圆W相向的位置)。在支承板30被载置于旋转板20时,限制部52起到限制晶圆W的侧周面并且与可动构件51相协作地保持晶圆W的效果。限制部52沿支承板30的周向上的预先决定的位置处设置有多个。限制部52可以逐一地设置于与可动构件51相向的位置,也可以设为以多个限制部52与一个可动构件51相向的方式保持晶圆W的结构。作为一例,在图4中示出以下的例子:三个可动构件51以呈120°的中心角的方式均匀地配置,并且在以晶圆W的中心为基准的与可动构件51相向的位置处设置三个限制部52。在这样的结构的情况下,三个可动构件51和限制部52以60°的中心角的间隔交替地均匀配置。
当使支承板30相对于上述的可动构件51下降并载置于旋转板20时,可动构件51的被推压部515被支承板30推压。因此,可动构件51绕转动轴转动,立起部511向旋转板20的中心部侧移动并且从侧周面推按支承板30上的晶圆W。立起部511从形成于旋转板20的槽部与支承板30之间的间隙向上方侧伸出来限制并保持晶圆W。像这样,支承板30作为推压可动构件51的被推压部515的构件发挥功能,具有作为可动构件工作机构的功能。
上述说明的可动构件51利用转动轴513进行的移动是一例。可动构件51伴随晶圆W的移动进行移动的方法不限定于上述的方法。即,可动构件51也可以是不使用转动轴513的结构。例如,可以设为通过使可动构件51沿晶圆W的径向移动来在使用可动构件51和限制部52进行晶圆W的保持的状态与未进行晶圆W的保持的状态之间切换。
在上述的基板处理装置10中,在通过可动构件51和限制部52保持着晶圆W的状态下,向晶圆W供给处理液等,来进行与晶圆W有关的处理。以往,作为可动构件51,有时使用PFA(Perfluoroalkoxyalkane:全氟烷氧基链烷)、添加了炭黑的PEEK(Poly Ether EtherKetone:聚醚醚酮)等导电性的构件。在当将支承板30载置在旋转板20上时与被推压部515接触的支承板30的下表面侧的区域设置由导电性材料构成的导电部33,并且在与导电部33接触的旋转板20的上表面侧的区域也设置由导电性材料构成的导电部24。因而,当使导电部24接地时,能够构成用于对以带电的状态被可动构件51保持的晶圆W进行除电的接地电路。像这样,可以说使用了导电性的构件的可动构件51具有进行晶圆W的除电的功能。特别地,认为在利用纯水等进行晶圆W的冲洗处理时需要进行晶圆W的除电。
另一方面,在使用上述的基板处理装置10进行湿蚀刻来作为对具有导电性膜的晶圆W的液处理的情况下,有时发生在可动构件51与晶圆W的导电性膜接触的区域的附近进行的蚀刻相比于在其它区域进行的蚀刻而言进展更快这样的现象。
作为可动构件51附近处的液处理得到促进的晶圆W,例如列举在由硅等形成的主基板上形成有氮化钛(TiN)、钨(W)或钴(Co)等的导电性膜的晶圆W。本发明的发明人们确认出:当在使晶圆W的导电性的膜与可动构件51接触的状态下进行液处理(蚀刻处理)时,有时在晶圆W表面产生在特定的区域进行的蚀刻相比于在其它区域进行的蚀刻而言进展更快的特异点。具体地说,确认出在被可动构件51保持的区域的附近(图4所示的区域R1附近)进行的蚀刻进展更快的特异点。此外,将SPM(Sulfuric acid Peroxide Mixture:硫酸过氧化氢混合溶液)等用作蚀刻液,但认为不论什么种类的蚀刻液都存在蚀刻进展更快的可能性。
发明人们认真研究在可动构件51的附近产生与蚀刻有关的特异点的原因,结果认为存在以下原因。即,认为原因是:在用于对导电性膜进行处理的处理液与导电性膜之间的氧化还原反应中,从导电性膜侧放出的电子通过可动构件51,由此形成经由可动构件51和晶圆W的导电性膜的电路。并认为,电子利用该电路进行移动而,从而促进导电性膜中的电子的放出,由此促进导电性膜的膜材料离子的游离、即利用处理液进行的导电性膜的蚀刻。
作为发明人们的研究结果,确认出:即使在晶圆W不直接与导电性膜接触的情况下,也能够促进上述的导电性膜的蚀刻。例如,在去除了晶圆W的周缘部的导电性膜的情况下,可动构件51与晶圆W的主基板抵接,不直接与导电性膜接触。如果上述的电路仅经由可动构件51和晶圆W的导电性膜,则认为在可动构件51不直接与晶圆W的导电性膜接触的情况下不形成电路。然而,实际上发明人们确认出:即使在如上述那样不直接与晶圆W的导电性膜接触的情况下,也有时会促进可动构件51周边的蚀刻。即,表示出不仅能够形成经由晶圆W的导电性膜和可动构件51的电路,还能够形成经由处理液(在晶圆W和可动构件51的周边对流的处理液)和晶圆W的主基板的电路。
如上所述,认为当在可动构件51的周边形成至少经由可动构件51和导电性膜的电路时会引起可动构件51的附近处的蚀刻得到促进。因而,通过妨碍电路的形成,能够抑制蚀刻的促进。也就是说,通过设为不形成通过可动构件51的电路的结构,也能够防止针对可动构件51的附近的导电性膜进行的蚀刻得到促进。为了防止形成经由可动构件51的电路,考虑设为不向可动构件51自身流通电流的结构、即在可动构件51与晶圆W之间不流通电流或难以流通电流的结构。具体地说,列举增大可动构件51的电阻值(电阻)或将该可动构件51设为绝缘体。然而,当如上述那样设为在可动构件51与晶圆W之间不流通电流的结构时,认为无法利用可动构件51进行晶圆W的除电,由于晶圆W的带电而产生静电击穿等。具体地说,为了防止形成经由可动构件51和晶圆W的电路,期望可动构件51的电阻值例如为1015Ω以上。另一方面,为了利用可动构件51有效地进行晶圆W的除电,期望可动构件51的电阻值例如为105Ω以下。
因此,在本实施方式所涉及的基板处理装置10中,设为以下结构:在利用处理液进行晶圆W的蚀刻时防止形成通过可动构件51的电路,并且也能够实现作为对晶圆W的除电的功能。因此,将可动构件51设为能够变更电阻值(电阻)的结构。在利用处理液进行晶圆W的蚀刻时,通过提高可动构件51的电阻值,能够防止形成经由可动构件51和晶圆W的电路。另外,在除了利用处理液进行晶圆W的蚀刻时以外的时刻(例如冲洗时),通过减小可动构件51的电阻值来促进对晶圆W的除电。通过设为这样的结构,能够防止在进行蚀刻时可动构件51的周边的晶圆W的促进得到蚀刻。
作为起到上述的作用的可动构件51的具体结构,以下说明三个结构例。
(第一结构例)
首先,作为第一结构例,说明以下结构:通过改变可动构件与晶圆W的接触面积,来改变相对于在晶圆W与可动构件之间流通的电流的电阻值。如图5的(A)所示,在第一结构例中,设为能够改变可动构件51A与晶圆W的接触面积S。如图5的(A)所示,在设置有多个(例如三个)可动构件51A的情况下,以与多个可动构件51A对应的方式分别单独地设置有用于改变可动构件51A与晶圆W之间的接触面积的电阻值变更机构518。此外,电阻值变更机构518可以是能够将多个可动构件51A的电阻值一体地变更的结构。此外,在图5的(B)和图5的(C)中,省略了电阻值变更机构518的记载。
作为改变可动构件51A与晶圆W之间的接触面积S的方法,例如列举改变可动构件51A的形状的方法和改变可动构件51A与晶圆W的接触位置的方法。
图5的(B)表示改变可动构件51A的形状的方法的具体例。在能够使俯视观察时的可动构件51A的前端部(与图1等的立起部511的前端相当的位置)的宽度(沿着周向的长度)变更的情况下,能够通过改变宽度来改变接触面积S。图5的(B)表示相比于图5的(A)所示的状态使可动构件51A的宽度缩小从而使接触面积S减小了的状态。作为能够变更前端的宽度的可动构件51A,例如列举以下结构:可动构件51A的前端使用具有弹性的材料,例如通过改变由电阻值变更机构518产生的推压力来改变可动构件51A的前端部的宽度。此外,可以设为以下结构:通过改变可动构件51A的前端部的厚度来改变接触面积S,以取代通过改变可动构件51A的前端部的宽度来改变接触面积S。
如图5的(B)所示,设为通过改变可动构件51A的前端部的形状来改变接触面积S的结构,由此能够通过电阻值变更机构518来改变相对于在晶圆W与可动构件之间流动的电流的电阻值。
图5的(C)表示改变可动构件51A与晶圆W的接触位置的方法的具体例。在图5的(C)所示的例子中,以可动构件51A的前端部(与图1等的立起部511的前端相当的位置)在俯视时为四边形的方式构成可动构件51A的前端部(立起部511的前端512)。通过使可动构件51A旋转来将与晶圆W的接触位置从图5的(A)所示的特定的一边变更为四边形的前端部的角,由此变更可动构件51A与晶圆W的接触面。即,可动构件51A具有多个与晶圆W的接触面,通过变更接触面来改变接触面积S。电阻值变更机构518具有通过使前端部旋转来变更与晶圆W的接触位置的功能。像这样,可以通过使可动构件51A旋转来变更接触面,由此减小接触面积S。此外,在图5的(C)所示的例子中,使可动构件51A的前端部旋转以改变俯视时的接触面积S,但旋转方向能够适当地变更。另外,通过变更可动构件51A的形状,也能够调整接触面积S的变化程度等。
在改变可动构件51A的形状的方法和改变可动构件51A与晶圆W的接触位置的方法中,都不用变更可动构件的数量就能够实现电阻值的变更。在改变可动构件51A的形状的方法和改变可动构件51A与晶圆W的接触位置的方法中,共同的是,只要能够变更可动构件51A与晶圆W的接触面积S即可。因而,如图5的(A)~图的5(C)所示,不是必须变更俯视时的接触面积S。另外,只要能够至少变更可动构件51A与晶圆W的接触面积S即可,无需使可动构件51A整体变形或旋转。
(第二结构例)
作为第二结构例,说明以下结构:将电阻值互不相同的两种可动构件组合起来使用,由此改变相对于在晶圆W与可动构件之间流通的电流的电阻值。
在第二结构例中,说明以下情况:如图6的(A)所示,作为互不相同的两种可动构件,使用电阻值互不相同的两种可动构件51B(第一保持部)和可动构件51C(第二保持部)。可动构件51B、51C例如能够设为形状相同并且通过使用互不相同的材料而具有互不相同的电阻值的结构。具体地说,例如作为可动构件51B,使用以往以来作为可动构件使用的PEEK(Poly Ether Ether Ketone:聚醚醚酮,注册商标)或PFA(Perfluoroalkoxyalkane:全氟烷氧基链烷)等。这些材料是电阻值比较低(小)的材料。另外,作为可动构件51C,例如使用PCTFE(Polychlorotrifluoroethylene:聚三氟氯乙烯)、陶瓷等电阻值高(大)的材料。此外,也可以是,可动构件51B、51C并非是各自的整体由上述的材料构成,仅可动构件51B、51C的前端部(立起部511的前端512)的一部分由上述的材料构成即可。另外,在通过注射成型来制作可动构件的情况下,考虑将可动构件51B、51C的材料设为相同的材料,并且例如在可动构件51C中通过与模具接触的外层来构成与晶圆W的接触部分,由此变更电阻值。像这样,不特别限定通过可动构件来使电阻值不同的方法。
此外,如上所述,认为通过形成经过晶圆W与可动构件的接触面的电路能够促进晶圆W的蚀刻。因而,在能够实现期望的电阻值的范围内,至少使可动构件的前端部(立起部511的前端512)由规定的材料构成即可。
如图6的(A)所示,将如上述那样的两种可动构件51B、51C以60°的中心角的间隔交替且均匀地各配置三个。在设为这样的结构的情况下,呈各个可动构件51B、51C以120°的中心角的间隔均匀地配置的状态。此外,与可动构件51B、51C对应地适当地配置限制部52(参照图2等)。
多个可动构件51B、51C均与电阻值变更机构518连接,通过电阻值变更机构518的动作能够切换与晶圆W的接触的有无。
在这样的结构的情况下,如图6的(A)所示,在仅可动构件51B与晶圆W接触的情况下,在某种程度上,可动构件51B的电阻值低,因此呈在晶圆W与可动构件51B之间容易通电的状况。因而,能够适当地进行对晶圆W的除电。另一方面,如图6的(B)所示,在仅可动构件51C与晶圆W接触的情况下,在某种程度上,可动构件51C的电阻值高,因此呈在晶圆W与可动构件51B之间很难通电的状况。
因而,例如在进行晶圆W的蚀刻的情况下,设为使电阻值变更机构518工作并通过可动构件51C保持晶圆W的结构,来设为在晶圆W与可动构件51C之间不流通电流的结构。而且,在不进行晶圆W的蚀刻的情况下,设为使电阻值变更机构518工作并通过可动构件51B保持晶圆W的结构,来促进晶圆W与可动构件51B之间的通电以进行除电。像这样,可以通过变更保持晶圆W的可动构件51B、51C来变更可动构件的电阻值。
此外,电阻值变更机构518通过变更保持晶圆W的可动构件51B、51C来在与晶圆W接触的可动构件的电阻值低的状态和高的状态之间切换。在图6的(A)、(B)中说明了以下情况:电阻值变更机构518完全地更换可动构件51B和可动构件51C,由此通过变更与晶圆W接触的可动构件的种类来切换电阻值。然而,电阻值变更机构518只要能够在与晶圆W接触的可动构件的电阻值低的状态和高的状态之间切换即可,关于如何将与晶圆W接触的可动构件进行组合来实现上述的两个状态并无特别限定。
例如,可以通过使用全部的可动构件51B、51C保持晶圆W(设为将图6的(A)的可动构件51B和图6的(B)的可动构件51C进行了组合的状态)来实现与晶圆W接触的可动构件的电阻值低的状态。另外,也可以是,不仅将电阻值互不相同的两种可动构件进行组合,还将三种以上的可动构件进行组合来在两个状态之间进行切换。另外,也可以仅使用一种可动构件来变更保持晶圆W的可动构件的数量,由此在两个状态之间切换。在像这样变更保持晶圆W的可动构件的种类(或数量)来变更与晶圆W接触的可动构件的电阻值的情况下,仅通过可动构件的移动就能够变更电阻值,因此能够通过简单的结构实现。
(第三结构例)
作为第三结构例,说明可动构件51自身能够改变电阻值的情况。以往以来一直使用的可动构件51的材料的电阻值一般为固定值。然而,也可以设为以下结构:使用该电阻值可变的材料来作为可动构件51,由此改变相对于在晶圆W与可动构件之间流通的电流的电阻值。
具体地说,通过将导电性根据自身受到的力发生变化材料、即压敏导电性材料用作可动构件51,能够改变电阻值。作为压敏导电性材料,例如列举压敏导电性弹性体(压敏导电性橡胶)。
可动构件51由于受到支承板30的推压而转动,从而与晶圆W接触来支承晶圆W。此时,当设为通过增大从晶圆W受到的力而可动构件51的电阻值上升的结构时,能够根据处理来改变可动构件51的电阻值。具体地说,例如在对晶圆W进行蚀刻处理的期间,能够通过增大可动构件51所受到的力来增大电阻值,在不对晶圆W进行蚀刻处理的期间,能够通过减小可动构件51所受到的力来减小电阻值。在实现上述的结构的情况下,例如能够将引起可动构件51的转动的支承板30或支承可动构件51的弹簧构件514等设为电阻值变更机构518。即,能够设为以下结构:支承板30控制可动构件51的转动方向来增强利用可动构件51保持晶圆W的力,由此改变导电性。此外,作为改变可动构件51所受到的力的电阻值变更机构518,也可以另外设置其它构件等。例如,可以在可动构件51的外侧(例如内杯41的附近)设置用于改变可动构件51对晶圆W的按压力的机构。另外,只要能够改变可动构件51所受到的力即可,例如也可以不通过可动构件51对晶圆W的按压来改变可动构件51所受到的力,利用空气或风压等改变可动构件51所受到的力。
另外,通过将导电性根据自身的周边温度发生变化的材料、即温度反应性的导电性材料用作可动构件51,能够改变电阻值。作为这样的材料,例如列举PCT热敏电阻,但并不限定于此。进行蚀刻处理时的处理液一般为40度以上,另一方面,在其它处理中,处理液的温度一般小于40度。因而,将利用温度变化的在高温时(例如40度以上)电阻值变大的材料用作可动构件51。由此,在对晶圆W进行蚀刻处理的期间,通过可动构件51的温度变高能够增大电阻值。另一方面,在不对晶圆W进行蚀刻处理的期间,通过可动构件51的温度变低能够减小电阻值。此外,在将电阻值根据温度发生变化的材料用作可动构件51的情况下,例如改变可动构件51的周边的温度、即控制与处理液的供给有关的上表面用喷嘴74以及处理液的供给的控制部18能够作为电阻值变更机构518发挥功能。
在可动构件51自身的电阻值可变的第三结构例中,均不用变更可动构件的数量就能够实现电阻值的变更。并且,在将PCT热敏电阻用作可动构件51的情况下,电阻值根据处理液的温度的变更发生变化,因此不使用用于控制可动构件的移动等的新的动作机构等就能够实现能够变更电阻值的可动构件。
以上对各种例示性的实施方式进行了说明,但不限定于上述的例示性的实施方式,可以进行各种省略、置换和变更。另外,能够将不同的实施方式中的要素进行组合来形成其它实施方式。
例如,在上述的例示性的实施方式中,说明了作为保持晶圆W的保持部是保持在旋转板20和支承板30上旋转的晶圆W的可动构件51和限制部52的情况。然而,在进行蚀刻处理时保持晶圆W的保持部可以是与可动构件51及限制部52不同的构件。例如,也可以是,保持部不是保持晶圆W的侧周面的机械卡盘,是保持晶圆W的背面来使该晶圆W旋转的所谓的旋转卡盘。
另外,在上述的例示性的实施方式中说明了三个结构例,但可以将它们组合起来使用。
根据以上的说明,应该理解的是,本公开的各种实施方式是以说明为目的在本说明书进行了说明,不脱离本公开的范围和主旨的情况下能够进行各种变更。因而,本说明书所公开的各种实施方式并非意图进行限定,真正的范围和主旨由所附的权利要求书表示。
[例示]
例1:在一个例示性的实施方式中,基板处理装置具有:保持部,其保持基板;处理液供给部,其对被所述保持部保持着的所述基板供给处理液;以及电阻值变更机构,其能够变更与所述基板接触的所述保持部的电阻。如上述那样,通过设为能够变更保持部的电阻的结构,例如能够根据利用处理液进行液处理的阶段来变更保持部的电阻。因而,例如通过防止由于保持部的电阻低而在保持部与基板之间流通电流,也能够防止基板的腐蚀等,从而能够适当地进行基板表面的蚀刻。
例2:在例1所记载的基板处理装置中,可以设为以下方式:所述保持部具有电阻小的第一保持部和电阻大的第二保持部,所述电阻值变更机构将保持所述基板的保持部在所述第一保持部与所述第二保持部之间切换,由此变更与所述基板接触的所述保持部的电阻。在该情况下,通过将保持基板的保持部在第一保持部与第二保持部之间切换,能够变更与基板接触的保持部的电阻,因此能够通过简单的结构实现电阻的变更。
例3:在例1所记载的基板处理装置中,可以设为以下方式:所述保持部具有与基板的接触面积互不相同的保持面,所述电阻值变更机构通过变更所述保持部与所述基板的接触面积,来变更与所述基板接触的所述保持部的电阻。在该情况下,通过变更保持面来变更保持部的接触面积,由此能够变更与基板接触的保持部的电阻,因此不增加保持部的数量就能够实现电阻的变更。
例4:在例1所记载的基板处理装置中,可以设为以下方式:所述保持部设置有多个,所述电阻值变更机构通过变更与所述基板接触的保持部的数量,来变更与所述基板接触的所述保持部的电阻。在该情况下,通过变更保持基板的保持部的数量,能够变更与基板接触的保持部的电阻,因此能够通过简单的结构实现电阻的变更。
例5:在例1所记载的基板处理装置中,可以设为以下方式:所述保持部由压敏导电性材料构成,所述电阻值变更机构通过变更所述保持部从所述基板受到的力,来变更与所述基板接触的所述保持部的电阻。在该情况下,通过利用电阻值来变更机构变更基板所受到的力,能够变更与基板接触的保持部的电阻,因此不用进行保持部的更换等就能够实现电阻的变更。
例6:在例1所记载的基板处理装置中,能够设为以下方式:所述保持部由PTC(Positive Temperature Coefficient:正温度系数)热敏电阻构成,所述电阻值变更机构通过变更在所述保持部的周围流动的处理液的温度,来变更与所述基板接触的所述保持部的电阻。在该情况下,通过变更处理液的温度来变更保持部的接触面积,从而能够变更与基板接触的保持部的电阻,因此不用进行保持部的更换等就能够实现电阻的变更。
例7:在一个例示性的实施方式中,基板处理方法是对被保持部保持着的基板供给处理液来进行处理的基板处理方法,可以设为以下方式:在处理中变更与所述基板接触的所述保持部的电阻。在该情况下,起到与例1相同的作用效果。
例8:在例7所记载的基板处理方法中,可以设为以下方式:在进行蚀刻处理时,增大与所述基板接触的所述保持部的电阻。在进行蚀刻处理的情况下,由于在基板与保持部之间流通电流而发生基板的腐蚀。与此相对地,通过设为上述的方式,能够防止基板的腐蚀等,并且能够适当地进行基板表面的蚀刻。
例9:在例7或例8所记载的基板处理方法中,可以设为以下方式:在进行冲洗处理时,减小与所述基板接触的所述保持部的电阻。在进行冲洗处理时,要求保持部与基板电连接来进行除电。因而,通过设为上述的方式,能够适当地进行基板的除电,从而防止基板的损伤等。
Claims (9)
1.一种基板处理装置,具有:
保持部,其保持基板;
处理液供给部,其对被所述保持部保持着的所述基板供给处理液;以及
电阻值变更机构,其能够变更与所述基板接触的所述保持部的电阻。
2.根据权利要求1所述的基板处理装置,其特征在于,
所述保持部具有电阻小的第一保持部和电阻大的第二保持部,
所述电阻值变更机构将保持所述基板的保持部在所述第一保持部与所述第二保持部之间切换,由此变更与所述基板接触的所述保持部的电阻。
3.根据权利要求1所述的基板处理装置,其特征在于,
所述保持部具有与基板的接触面积互不相同的保持面,
所述电阻值变更机构通过变更所述保持部与所述基板的接触面积,来变更与所述基板接触的所述保持部的电阻。
4.根据权利要求1所述的基板处理装置,其特征在于,
所述保持部设置有多个,
所述电阻值变更机构通过变更与所述基板接触的保持部的数量,来变更与所述基板接触的所述保持部的电阻。
5.根据权利要求1所述的基板处理装置,其特征在于,
所述保持部由压敏导电性材料构成,
所述电阻值变更机构通过变更所述保持部从所述基板受到的力,来变更与所述基板接触的所述保持部的电阻。
6.根据权利要求1所述的基板处理装置,其特征在于,
所述保持部由正温度系数热敏电阻构成,
所述电阻值变更机构通过变更在所述保持部的周围流动的处理液的温度,来变更与所述基板接触的所述保持部的电阻。
7.一种基板处理方法,用于对被保持部保持着的基板供给处理液来进行处理,在所述基板处理方法中,
在处理中变更与所述基板接触的所述保持部的电阻。
8.根据权利要求7所述的基板处理方法,其特征在于,
在进行蚀刻处理时,增大与所述基板接触的所述保持部的电阻。
9.根据权利要求7或8所述的基板处理方法,其特征在于,
在进行冲洗处理时,减小与所述基板接触的所述保持部的电阻。
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Citations (18)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2000353606A (ja) * | 1999-06-14 | 2000-12-19 | Alps Electric Co Ltd | 可変抵抗器 |
CN1873911A (zh) * | 2005-06-03 | 2006-12-06 | 东京毅力科创株式会社 | 等离子体处理室、电位控制装置、方法、程序和存储介质 |
US20070153244A1 (en) * | 2005-12-30 | 2007-07-05 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
JP2008060191A (ja) * | 2006-08-30 | 2008-03-13 | Sony Corp | 基板処理装置および基板処理方法 |
CN101145505A (zh) * | 2006-09-15 | 2008-03-19 | 大日本网目版制造株式会社 | 基板处理装置和基板处理方法 |
JP2008235427A (ja) * | 2007-03-19 | 2008-10-02 | Sharp Corp | 可変抵抗素子及びその製造方法、並びにその駆動方法 |
US20080246497A1 (en) * | 2007-04-06 | 2008-10-09 | Takashi Furukawa | Semiconductor wafer inspection apparatus |
CN101826434A (zh) * | 2009-03-06 | 2010-09-08 | 东京毅力科创株式会社 | 等离子体处理装置和等离子体处理装置用的电极 |
JP2012004320A (ja) * | 2010-06-16 | 2012-01-05 | Tokyo Electron Ltd | 処理装置及び処理方法 |
CN102933323A (zh) * | 2010-06-17 | 2013-02-13 | 阪东化学株式会社 | 洁净系统 |
US20130084710A1 (en) * | 2011-09-29 | 2013-04-04 | Masahiro Miyagi | Substrate processing apparatus and substrate processing method |
JP2014099583A (ja) * | 2012-08-07 | 2014-05-29 | Tokyo Electron Ltd | 基板洗浄装置、基板洗浄システム、基板洗浄方法および記憶媒体 |
CN105845603A (zh) * | 2015-02-03 | 2016-08-10 | 东京毅力科创株式会社 | 基板液处理装置、基板液处理方法以及基板处理装置 |
US20170283977A1 (en) * | 2016-03-29 | 2017-10-05 | Tokyo Electron Limited | Substrate processing apparatus and substrate processing method |
CN107622968A (zh) * | 2016-07-13 | 2018-01-23 | 株式会社荏原制作所 | 基板保持器及使用该基板保持器的镀覆装置 |
US20180230620A1 (en) * | 2017-02-16 | 2018-08-16 | Ebara Corporation, | Substrate holder, plating apparatus, plating method, and electric contact |
CN207868172U (zh) * | 2017-01-17 | 2018-09-14 | 东京毅力科创株式会社 | 基板处理装置 |
CN108538750A (zh) * | 2017-03-01 | 2018-09-14 | 东京毅力科创株式会社 | 基板处理装置和基板处理方法 |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3137873B2 (ja) * | 1995-06-27 | 2001-02-26 | 株式会社日立製作所 | 半導体ウェハシールエッチング装置 |
JP2008016660A (ja) * | 2006-07-06 | 2008-01-24 | Dainippon Screen Mfg Co Ltd | 基板処理方法および基板処理装置 |
-
2018
- 2018-12-25 JP JP2018240760A patent/JP7203593B2/ja active Active
-
2019
- 2019-12-12 KR KR1020190165601A patent/KR20200079424A/ko not_active Application Discontinuation
- 2019-12-17 US US16/716,738 patent/US11488849B2/en active Active
- 2019-12-25 CN CN201911356979.5A patent/CN111383961B/zh active Active
Patent Citations (19)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2000353606A (ja) * | 1999-06-14 | 2000-12-19 | Alps Electric Co Ltd | 可変抵抗器 |
CN1873911A (zh) * | 2005-06-03 | 2006-12-06 | 东京毅力科创株式会社 | 等离子体处理室、电位控制装置、方法、程序和存储介质 |
US20070153244A1 (en) * | 2005-12-30 | 2007-07-05 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
JP2008060191A (ja) * | 2006-08-30 | 2008-03-13 | Sony Corp | 基板処理装置および基板処理方法 |
CN101145505A (zh) * | 2006-09-15 | 2008-03-19 | 大日本网目版制造株式会社 | 基板处理装置和基板处理方法 |
JP2008235427A (ja) * | 2007-03-19 | 2008-10-02 | Sharp Corp | 可変抵抗素子及びその製造方法、並びにその駆動方法 |
US20080246497A1 (en) * | 2007-04-06 | 2008-10-09 | Takashi Furukawa | Semiconductor wafer inspection apparatus |
CN101826434A (zh) * | 2009-03-06 | 2010-09-08 | 东京毅力科创株式会社 | 等离子体处理装置和等离子体处理装置用的电极 |
JP2012004320A (ja) * | 2010-06-16 | 2012-01-05 | Tokyo Electron Ltd | 処理装置及び処理方法 |
CN102933323A (zh) * | 2010-06-17 | 2013-02-13 | 阪东化学株式会社 | 洁净系统 |
US20130084710A1 (en) * | 2011-09-29 | 2013-04-04 | Masahiro Miyagi | Substrate processing apparatus and substrate processing method |
JP2014099583A (ja) * | 2012-08-07 | 2014-05-29 | Tokyo Electron Ltd | 基板洗浄装置、基板洗浄システム、基板洗浄方法および記憶媒体 |
CN105845603A (zh) * | 2015-02-03 | 2016-08-10 | 东京毅力科创株式会社 | 基板液处理装置、基板液处理方法以及基板处理装置 |
US20170283977A1 (en) * | 2016-03-29 | 2017-10-05 | Tokyo Electron Limited | Substrate processing apparatus and substrate processing method |
CN107240565A (zh) * | 2016-03-29 | 2017-10-10 | 东京毅力科创株式会社 | 基板处理装置和基板处理方法 |
CN107622968A (zh) * | 2016-07-13 | 2018-01-23 | 株式会社荏原制作所 | 基板保持器及使用该基板保持器的镀覆装置 |
CN207868172U (zh) * | 2017-01-17 | 2018-09-14 | 东京毅力科创株式会社 | 基板处理装置 |
US20180230620A1 (en) * | 2017-02-16 | 2018-08-16 | Ebara Corporation, | Substrate holder, plating apparatus, plating method, and electric contact |
CN108538750A (zh) * | 2017-03-01 | 2018-09-14 | 东京毅力科创株式会社 | 基板处理装置和基板处理方法 |
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