CN101100743B - 金属有机化合物的化学气相淀积设备 - Google Patents

金属有机化合物的化学气相淀积设备 Download PDF

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CN101100743B
CN101100743B CN2007101274009A CN200710127400A CN101100743B CN 101100743 B CN101100743 B CN 101100743B CN 2007101274009 A CN2007101274009 A CN 2007101274009A CN 200710127400 A CN200710127400 A CN 200710127400A CN 101100743 B CN101100743 B CN 101100743B
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上野昌纪
上田登志雄
高须贺英良
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Sumitomo Electric Industries Ltd
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Abstract

金属有机化合物化学气相淀积设备是用于通过使用反应性气体在衬底上形成薄膜的金属有机化合物化学气相淀积设备，并且包括：用于加热该衬底并且具有用于保持该衬底的保持表面的基座；和用于引入反应性气体到该衬底的气流道。具有被保持面对着该气流道的内部的保持表面的该基座是可旋转的，并且沿着反应性气体的流向的该气流道的高度从一个位置到一个位置保持定值，并且从该位置到下游侧是单调递减的。因此能在使得所形成的薄膜具有均匀厚度的同时提高薄膜形成效率。

Description

金属有机化合物的化学气相淀积设备
技术领域
本发明涉及金属有机化合物的化学气相淀积设备，并特别涉及用于形成氮化物半导体层的金属有机化合物的化学气相淀积设备。
背景技术
金属有机化合物的化学气相淀积(MOCVD)方法是典型的化学气相淀积工艺之一，其中III族有机金属在衬底的一个表面被蒸发然后热分解，并与V族气体起反应来形成薄膜。这样的方法能够控制薄膜厚度和成分，并且在生产率方面表现良好，以致于它被广泛地在制造半导体设备中用作薄膜形成技术。
用于该MOCVD方法的MOCVD设备包括一个腔室、配置在该腔室内的基座、和用于允许反应性气体在衬底表面流动的导管。在该MOCVD设备内，通过保持该衬底在该基座上、当使得该腔室成为减压状态时加热该衬底到适当的温度、并且通过导管引入有机金属气体到该衬底的表面来形成一层薄膜。在这时候，为了该形成的薄膜具有均匀的厚度，该MOCVD设备要求该反应性气体均匀地沿着该衬底的表面流动。为了这样做，各种各样的形状的导管已经被计划在该MOCVD设备内。
如传统的MOCVD设备，日本专利特开No.2-291113，例如，公开了具有用于引入反应性气体到衬底之上的引入管的化学气相淀积设备。该引入管具有：提供了一个基座在其中的一个样品保持腔室；具有沿着该衬底的宽度方向长而沿着该衬底的高度方向短且平的截面形状的一个瓶颈部分，并且该瓶颈部分从该衬底的一侧吹反应性气体于该衬底之上；以及导向装置部分，位于该衬底之上并且均匀地覆盖该衬底，在其顶部具有大约等于该瓶颈部分在宽度方向上的宽度的缺口，或朝着该反应性气体下游侧的方向递减的缺口，以便沿着该衬底的表面引导该反应性气体。该基座被固定到该样品保持腔室上，并保持该衬底在反应性气体流的下游侧。
此外，日本专利特开No.6-216030，例如，公开了具有用于引入反应性气体到衬底之上的气流道的化合物半导体化学气相淀积设备。该气流道具有一个锥体，其宽度在沿高度方向上从上游侧到下游侧递减。一基座被固定到该锥体的下部。
此外，日本专利特开平No.2-291114公开了一种化学气相淀积设备，其包括用于保持衬底的旋转基座、和用于引入反应性气体到该衬底的衬管(liner pipe)。该衬管的高度在用于引入反应性气体的整个通道上单调地递减。
该MOCVD设备被要求来提高薄膜形成效率。该基座尺寸扩大不仅能同步的加热多个衬底，而且使形成大直径的衬底成为可能，由此能提高薄膜形成效率。然而，基座的尺寸扩大增大了在该基座上游侧和下游侧之间的距离，导致在该基座的该上游侧和该下游侧之间的反应性气体条件(例如该反应性气体的浓度、温度等等)有显著地差异。结果，出现了形成的薄膜厚度不均匀的问题。同样地，常规意义上，它不可能在容许所形成的薄膜具有均匀厚度的同时提高薄膜形成效率。
发明内容
相应地，本发明的目的是要提供能在容许形成的薄膜具有均匀的薄膜厚度的同时提高薄膜形成效率的MOCVD设备。
根据本发明的MOCVD设备是用于通过使用反应性气体在衬底上形成薄膜的金属有机化合物化学气相淀积设备，并且包括：用于加热该衬底并且具有用于保持该衬底的保持表面的加热元件；和用于引入反应性气体到该衬底的气流道(flow channel)。具有被保持面对着该气流道的内部的保持表面的该加热元件是可旋转的。沿着反应性气体的流向的该气流道的高度从用于保持该衬底在该保持表面的位置的上游侧端部(lateral end)到该保持表面的任意的位置保持恒定，而从该任意的位置到下游侧是单调递减的。
在根据本发明该MOCVD设备中，从该任意的位置到该下游侧，反应性气体的反应速率是递增的。因此可以获得，沿着反应性气体的流向在保持表面的位置和反应气体的反应速率之间的大致线性关系。作为结果，通过旋转该加热元件，可以在该衬底上提供具有均匀厚度的薄膜。此外，不必使该加热元件的上游侧和下游侧的反应性气体反应的条件一致，因此可以扩大该加热元件的尺寸并提高薄膜形成效率。
注意在本申请的说明书中“气流道的高度”的意思是指：在垂直于该加热元件的保持表面的方向上的该气流道内部的空间的长度。
优选地，在该根据本发明MOCVD设备中，该气流道在高度上的单调递减终止于位于该衬底保持位置的下游侧端部向上2％的位置处的下游的一个位置处。
如果从该任意的位置到该下游侧，沿着反应性气体的流向的该气流道的高度是单调递减的，则在接近单调递减终止的位置的下游侧，该反应性气体的反应速率显著地递减。相应地，通过在位于该衬底保持位置的下游侧端部向上2％位置的下游一个位置处终止该单调递减，可以在沿着反应性气体的流向的衬底保持位置和反应性气体的反应速率之间获得线性关系。
注意，在本申请的说明书中“位于该衬底保持位置的下游侧端部向上2％的位置处的下游的一个位置处”意思是指位于沿流动方向的该保持表面的长度上(该保持表面的直径)向上2％的位置。
优选地，在该根据本发明MOCVD设备中，该气流道的高度的单调递减终止于位于该衬底保持位置的下游侧端部的位置和位于该下游侧端部位置的下游侧的位置中的任一处。
因此，在沿着反应性气体的流向的衬底保持位置和反应性气体的反应速率之间，可以获得线性关系。
优选地，在根据本发明的MOCVD设备中，在该保持表面上，沿着宽度方向的该气流道的高度从每个末端部分(end portion)到该保持表面的中心部呈单调递减。
优选地，在根据本发明MOCVD设备中，沿着宽度方向的该气流道的高度以曲形方式单调递减。
相应地，该保持表面的中心部的反应性气体的反应速率是递增的，因此可以在气流道的宽度方向提供均匀的反应速率。
注意，在本申请的说明书中“气流道的宽度方向”意思是指同时垂直于气流道高度的方向和反应性气体的流向的方向。
优选地，在根据本发明MOCVD设备中，该气流道在任意位置的上游侧具有瓶颈部分，并且沿着反应性气体的流向的该气流道高度在该瓶颈部分是一旦递减后就又递增。
因此，在任意位置的上游侧生长速率可以递增到大致与该任意位置下游侧的生长速率相同。作为结果，可以生长一种均匀的薄膜。
结合附图，从本发明的以下详细说明中，本发明的上文及其他目的、特征、方面和优点变得更加显而易见。
附图说明
图1是示出了根据本发明的第一实施例的MOCVD设备的结构的截面图。
图2是示出了图1中基座的周边的平面图。
图3是示出了本发明的第一实施例中沿着反应性气体流向的位置和气流道的高度之间关系的图表。
图4是示出了本发明的比较例1中沿着反应性气体流向的位置和气流道的高度之间关系的图表。
图5是示出了沿着反应性气体的流向，基座的距离上游侧末端的距离和InGaN生长速率之间关系的图表，InGaN层是借助于比较例1的MOCVD设备形成的，其中基座不旋转。
图6是示出了距离基座的中心的距离和InGaN生长速率之间关系的图表，InGaN层是借助于比较例1的MOCVD设备形成的，其中基座旋转。
图7是示出了距离基座的中心的距离和InGaN生长速率之间关系的图表，InGaN层是分别借助于本发明例1、本发明例2和比较例1中的MOCVD设备形成的。
图8是示出了根据本发明的第二实施例的MOCVD设备的气流道的透视图。
图9是图8中沿着IX-IX的截面图。
图10是示出了根据本发明的第二实施例的MOCVD设备的修改的透视图。
图11是示出了本发明的第三实施例中沿着反应性气体流向的位置和气流道的高度之间关系的图表。
图12是示出了本发明的第三实施例中沿着反应性气体流向的位置和气流道的高度之间关系改进的图表。
图13是示出了距离基座的中心的距离和InGaN生长速率之间关系的图表，InGaN层是借助于本发明例1和本发明例3的MOCVD设备形成的。
具体实施方式
以下参考附图描述本发明的实施例。
(第一实施例)
参考图1和2，根据本实施例MOCVD设备1包括腔室3、作为加热元件的基座5、加热器9、和气流道11。基座5、加热器9、和气流道11处于腔室3中。气流道11在图1中横向延伸。基座5的保持表面(图1中的顶面)面对气流道11的内部。
基座5，其具有圆盘形状，放置在也具有圆盘形状的加热器9上。旋转轴13附着于基座的下半部，因此具有面对气流道11的内部的表面的基座5是可旋转的。多个凹形部分7，每个顶视图都是圆形，被形成在基座5的保持表面上。衬底20分别地被保持在凹形部分7中，并且由此衬底20被加热。参考图2，特别地，七个凹形部分7被形成在基座5的保持表面上，并且圆形的衬底20被分别地保持在该凹形部分7中。
气流道11是水平型的，三个分层的流动系统，并且平行于基座5的该保持表面延伸。换句话说，气流道11在上游侧(在图1的左侧)被分成多个气流道11a-11c。气流道11b和11c之间的边界终止在位置A1，而气流道11a和11b之间的边界终止在位置A2。气流道11的宽度从该上游侧到紧靠后述的(图2)位置A3的位置是恒定比率递增的。气流道11a-11c分别具有高度t3、t2和t1。优选气流道11的高度t4在从位置A2到位置A3之内满足t4≥t1+t2+t3。
在MOCVD设备1中，多个衬底20被保持在基座的保持表面上，而基座5被加热器9加热并且旋转。气体G1-G3，其组成反应性气体，分别通过气流道11a-11c被引入。反应性气体流向图1的右边。例如，设想III-V族氮化物半导体层形成的情况。关于气体G1，使用的是吹扫气体诸如氢(H2)气或氮(N2)气。关于气体G2，使用的是包含III族元素诸如三甲基镓(TMG)、三甲基铟(TMI)或三甲基铝(TMA)的有机金属气体和诸如H2气或N2气的输运气体的混合气体。关于气体G3，使用的是包含V族元素的气体诸如氨(NH3)气和诸如H2气或N2气的输运气体的混合气体。当这些气体G1-G3被引入，气体G2和气体G3在位置A1开始混合，并且进一步的在位置A2与吹扫气体混合，以便组成反应性气体G。混合气体G然后被引入到平行于该保持表面的基座5上并且扩散，又通过基座5被加热。包含在混合气体G中的该有机金属气体被加热分解而成为中间反应物，其与氨起化学反应而成为氮化物半导体。结果，在衬底20的表面上形成氮化物半导体层。
在MOCVD设备1中，沿着反应性气体的流向的该气流道11的高度在基座5的该保持表面的一个位置被改变。参考图1-3，在基座5的该保持表面用于保持衬底20的位置的上游侧端部被称为位置A3，而其下游侧端部被称为位置A4。气流道11的高度从位置A2到超过保持表面的位置A3的任意位置S是定值，在从位置S到朝向该下游侧的位置E(图1中示出的高度为t5的部分)是单调递减(线性减小)的，而在位于位置E的下游侧区域(包括位置A4的区域)再一次变成定值。
在图3中，单调递减终止的位置E，是位于位置A4的上游侧。然而，位置E优选地位于A4位置向上2％的一个位置的下游侧，而更加优选地位于与位置A4相同的位置或在位置A4的下游侧上。
本发明的发明人发现，用MOCVD设备1，能提供在允许形成的薄膜具有均匀厚度的同时提高薄膜形成效率。这将在下文描述。
最初，本发明的发明人研制MOCVD设备(比较例1)其包括一个气流道和具有图2所示形状的基座，气流道具有的高度t4在位置A3的上游侧上递减和具有的高度t5从位置A3到位置A4保持定值(t5＝t1+t2+t3)，如图1和图4的点划线P1所示。这样的MOCVD设备用于形成InGaN层，其是半导体氮化物层，在采用不旋转的基座的衬底表面上。对沿着反应性气体的流向的到基座的上游侧端部的距离和InGaN生长速率之间的关系进行检验。结果显示在图5中。注意图5中的结果是沿着基座在其宽度方向的中心线(图2中线C)获得的，而且通过图5中的箭头显示的范围表示了基座的保持表面上用于保持衬底的位置。为了比较，还示出了一个2英寸衬底被保持在设备中的情况，该设备具有几何相似方式缩小了的基座尺寸和气流道尺寸，因此一个2英寸衬底能被保持在其中。
参考图5，在该基座处保持了七个衬底，在该基座的InGaN生长速率在远离上游侧端部大约40mm的位置(例如基座的开始位置)从0显著地递增，并在远离该上游侧端部大约125mm的位置呈现最大值，然后稳定地递减。该InGaN生长速率在保持一个衬底的情况下通常单调递增。
至于图5中的结果，该生长速率从在远离上游侧端部大约40mm的位置从0显著地增加的理由似乎是，那些反应性气体被传送到该基座上到一定程度，从而启动III族元素和V族元素之间的反应。该生长速率呈现最大值的理由是，随着原料的扩散朝着下游侧的方向推进，生长出边界层，由此浓度梯度是先递增然后变稳定。图5中的结果进一步的表明，当基座不旋转，反应性气体的反应条件在上游侧和下游侧之间有显著地差异，要归因于基座的尺寸扩大。
接下来，本发明的发明人用比较例1中的MOCVD设备以便在随着基座旋转的衬底表面上形成InGaN层。注意那六个衬底是保持在基座上，使得每一个衬底的中心位于距离该基座的中心53mm的位置。检验距离基座的中心的距离和InGaN生长速率之间的关系。结果显示在图6中。为了比较，还示出了一个2英寸衬底保持在能够保持一个2英寸衬底的尺寸的设备中的情况的结果。此外，在该衬底上InGaN生长速率的分布宽度显示在表1中。
(表1)
 
保持六个衬底的情况 保持一个衬底的情况
InGaN生长速率的分布宽度 ±4.3％ ±1.8％
参考图6和表1，基座的转动使InGaN生长速率分布较为平均和得到提高。然而，当保持一个衬底时所获得该InGaN生长速率的分布宽度是±1.8％，而当保持六个衬底时所获得InGaN生长速率的分布宽度是±4.3％。这表明了即使当基座在旋转，因为基座的尺寸扩大的缘故所形成的薄膜厚度变得不均匀。它也表明了无论在保持一个衬底的情况下还是在保持六个衬底的情况下，InGaN生长速率在基座的外径侧上是递减的。
设想薄膜是形成在随着基座旋转的衬底上的情况。如果沿着反应性气体的流向该保持表面的位置和反应性气体的反应速率之间的关系是成线性的(成比例关系)，可以在该衬底上形成具有均匀厚度的薄膜。换句话说，当该基座旋转时，没有必要使在该基座的上游侧和下游侧的反应性气体的反应的条件均匀化。
本发明的发明人根据图1显示的本实施例制造的MOCVD设备1(本发明的例1)，以使得提高图5中在该基座的下游侧的InGaN生长速率并获得沿着反应性气体的流向的保持表面的位置与反应性气体的反应速率之间的近似线性关系。在本发明的例1中，在图5中InGaN生长速率呈现最大值的位置(在125mm的位置)被设定为位置S，在此处开始单调递减。接下来，使用本发明的例1和比较例1中间每一个的MOCVD设备来在随着基座旋转的、保持在该基座上的六个衬底中间每一个的表面上形成InGaN层。检验InGaN生长速率在衬底的分布宽度，并且其结果显示在表2中。
(表2)
 
比较例1 本发明的例1
InGaN生长速率分布宽度 ±4.3％ ±0.4％
参考表2，比较例1的InGaN生长速率分布是±4.3％，而本发明的例1的InGaN生长速率分布实现±0.4％的小分布宽度。这表明了，用根据本实施例的MOCVD设备1，即使该基座尺寸扩大并且薄膜是同时地形成在多个衬底上，它也能够使所形成的薄膜具有均匀厚度。
在MOCVD设备1中，在位置E处气流道11的高度单调递减终止，位置E优选地位于位置A4向上2％的位置的下游侧，并且更加优选地位于与位置A4相同的位置或在位置A4的下游侧。因此可以使得沿着反应性气体的流向的衬底保持位置和反应性气体的反应速率之间的关系是成线性的。这将在下文描述。
本发明的发明人检验位置E对生长速率的影响，其中在位置E处气流道11的高度的单调递减终止。具体而言，对于图1中的MOCVD设备，制备了单调递减终止处的位置E位于位置A4的上游侧(本发明的例1)的设备和单调递减终止处的位置E位于与位置A4相同的位置的设备(本发明的例2)。为了比较，制备了比较例1的MOCVD设备。接下来，使用本发明的例1、本发明的例2和比较例1中间每一个的MOCVD设备来在该基座上所保持的六个衬底中的每一个的表面上形成InGaN层。检验到基座的中心的距离和InGaN生长速率之间的关系。结果显示在图7中。注意图7中的结果是沿着在该基座的宽度方向的中心线(图2中的线C)的那些结果。图7中的箭头显示的范围表示了该基座的保持表面上用于保持该衬底的位置。
参考图7，在本发明的例1和2中，从基座的上游侧到下游侧InGaN生长速率近似线性地递增。然而，本发明的例1中线性形状在该图右边的衬底保持位置变形了，而本发明的例2中线性的形状一直保持到衬底保持位置的下游侧端部(位置A4)。上述结果说明，通过设置终止位置E在如位置A4相同的位置或在位置A4下游侧，可以构成沿着反应性气体的流向的保持位置和反应性气体的反应速率之间的线性关系。如果终止位置E位于位置A4向上2％位置的下游侧，也可以获得相似的效果。
在MOCVD设备1中，优选在位置A1和位置A3之间的距离d是至少50mm并且最多100mm，其中位置A1处包含组成该氮化物半导体层的元素的气体被混合。通过设置位置A1距离位置A3至少50mm，在接近位置A3处促进了III族反应性气体和V族反应性气体的扩散，以使得可以提高反应速率。通过设置位置A1离开位置A3最多100mm，能够避免该反应性气体在位置A3的上游侧以其气相起反应。
(第二实施例)
参考图8和9，在根据本实施例的MOCVD设备1中，在基座5的保持表面上，沿着其宽度方向的该气流道11的高度从每个末端部分(endportion)(高度h1)到基座5的该保持表面的中心部(高度h2)呈线性单调递减。如图10所示，在基座5的保持表面上的，沿着其宽度方向的该气流道11的高度从每一末端部分(高度h1)到基座5的该保持表面的中心部(高度h2)呈曲形单调递减。这样导致基座5的保持表面的中心部的反应性气体的反应速率递增，因此气流道11的反应速率在其宽度方向能够变得均匀。
(第三实施例)
参考图11，根据本实施例的气流道11具有接近位置A3的瓶颈部分30。气流道11的高度在瓶颈部分30是先递减、在其局部的最小值保持定值、然后递增。在图11中，气流道11的顶面在瓶颈部分30具有凸形。如图12所示，然而，气流道11的底面在瓶颈部分30可以具有凹形。
用根据本实施例的MOCVD设备，可以提高在位置S上游侧的生长速率并且获得与在位置S的下游侧生长速率大致相同的生长速率。结果，可以生长一种均匀的薄膜。
换句话说，从图7中本发明的例1和2中还看见，在在上游侧和下游侧之间，该保持表面的生长速率显示出三倍以上的差异。当薄膜在基座5旋转的状态生长时，将在衬底20上形成地薄膜交替地以较低速率和较高速率生长。已知的是，通过外延生长构成地薄膜的性质(例如结晶度)取决于生长速率而变换。具有不同的薄膜质量的外延薄膜的交替构造，倾向于生产出一种在薄膜厚度方向具有不均匀的薄膜质量的薄膜。
相应地，在本实施例中，气流道11的高度是在位置S的上游侧先递减，以使得在上游侧的原料扩散能得到促进并且能提高该上游侧的生长速率。此外，气流道11的高度随后增加，以使得抑制由于原料的促进扩散导致生长速率非线性的增加。随后在生长速率饱和的区域，气流道11的高度再一次递减，以使得生长速率的线性增加能够保持。同样地，可以在维持该保持表面生长速率的线性度的同时，减小上游侧和下游侧之间的生长速率差异。
优选气流道11的高度在位置A2和位置A3之间开始递减，然后在位置A3的该上游侧递增。优选气流道11在其宽度方面维持相同的形状。此外，瓶颈部分30的位置可以设置位于位置S上游侧的任何地方。
本发明的发明人检验了在位置S上游侧具有上瓶颈部分30的气流道11的实际效果。具体而言，关于图1中MOCVD设备，制备了其上形成有瓶颈部分30的设备(本发明的例3)，如图11所示。使用这样的MOCVD设备来在保持基座上的六个衬底中地每一个的表面上形成InGaN层。检验距离基座的中心的距离和InGaN生长速率之间的关系。结果显示在图13中，与本发明的例1的结果一起。注意图13中的结果是沿着基座在其宽度方向的中心线(图2中线C)获得的，而且通过图13中的箭头显示的范围表示了将衬底保持在基座的保持表面上的位置。
图13说明与本发明的例1比较起来，本发明例3的生长速率在上游侧和下游侧之间具有较小差异。具体地，本发明的例1的生长速率在上游侧和下游侧之间具有大约3.3倍的差异，而本发明的例3的生长速率在上游侧和下游侧之间具有大约2倍的差异.
虽然本发明已经详细地描述和图示，可以清楚的理解，它只作为图示和举例而并不作为限制，本发明的范围和精神仅仅由附属的权利要求的条款来限定。

Claims (6)

1.用于通过使用反应性气体在衬底上形成薄膜的金属有机化合物化学气相淀积设备，包括：
用于加热所述衬底并且具有用于保持所述衬底的保持表面的加热元件；和
用于引入所述反应性气体到所述衬底的气流道，其中
具有被保持面对着所述气流道的内部的保持表面的所述加热元件是可旋转的，
所述气流道的高度在从用于将所述衬底保持在所述保持表面的位置的上游侧端部到所述保持表面的任意的位置保持定值，所述任意的位置位于在所述上游侧端部的下游侧，并且从所述任意的位置到下游侧是单调递减的，
从保持所述衬底的位置的上游侧端部到保持所述衬底的位置的下游侧端部，沿着所述反应性气体的流向的所述气流道在宽度方向上保持相同的形状，
所述气流道至少被分成第一、第二和第三气流道(11a-11c)，它们位于保持表面的上游侧并且平行于保持表面延伸；所述第一、第二和第三气流道沿着所述气流道的高度方向依次排列，使得所述第一气流道位于最上面、所述第二和第三气流道(11b，11c)之间的边界终止于位于所述第一和第二气流道(11a，11b)之间的边界终止的位置(A2)的上游的位置(A1)，并且
所述第一气流道用于引入吹扫气体，所述第二和第三气流道用于引入含有构成氮化物半导体层的元素的气体。
2.根据权利要求1的金属有机化合物化学气相淀积设备，其中所述气流道的高度的单调递减终止于位于所述衬底保持位置的下游侧端部向上的、沿流动方向的所述保持表面的长度的2％处的位置以下的一个位置处。
3.根据权利要求2的金属有机化合物化学气相淀积设备，其中所述气流道在高度上的单调递减终止于位于所述下游侧端部的位置和位于所述下游侧端部的位置的下游侧的位置中的任一处。
4.根据权利要求1的金属有机化合物化学气相淀积设备，其中，在所述保持表面上，沿着宽度方向的所述气流道的高度从每个末端到所述保持表面的中心部单调递减。
5.根据权利要求4的金属有机化合物化学气相淀积设备，其中沿着宽度方向的所述气流道的高度是以单调递减的曲形的方式。
6.根据权利要求1的金属有机化合物化学气相淀积设备，其中
所述气流道在所述任意位置的上游侧具有瓶颈部分，并且
在所述瓶颈部分，沿着所述反应性气体的流向的所述气流道的高度一旦递减后就又递增。
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