CN101087678A - 脆性材料基板的截断方法及基板截断系统 - Google Patents
脆性材料基板的截断方法及基板截断系统 Download PDFInfo
- Publication number
- CN101087678A CN101087678A CNA2005800444232A CN200580044423A CN101087678A CN 101087678 A CN101087678 A CN 101087678A CN A2005800444232 A CNA2005800444232 A CN A2005800444232A CN 200580044423 A CN200580044423 A CN 200580044423A CN 101087678 A CN101087678 A CN 101087678A
- Authority
- CN
- China
- Prior art keywords
- line
- substrate
- laser beam
- breaking
- cutting
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Classifications
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/36—Removing material
- B23K26/38—Removing material by boring or cutting
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/0011—Working of insulating substrates or insulating layers
- H05K3/0044—Mechanical working of the substrate, e.g. drilling or punching
- H05K3/0052—Depaneling, i.e. dividing a panel into circuit boards; Working of the edges of circuit boards
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/36—Removing material
- B23K26/40—Removing material taking account of the properties of the material involved
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B28—WORKING CEMENT, CLAY, OR STONE
- B28D—WORKING STONE OR STONE-LIKE MATERIALS
- B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
- B28D5/0005—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by breaking, e.g. dicing
- B28D5/0011—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by breaking, e.g. dicing with preliminary treatment, e.g. weakening by scoring
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03B—MANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
- C03B33/00—Severing cooled glass
- C03B33/02—Cutting or splitting sheet glass or ribbons; Apparatus or machines therefor
- C03B33/0222—Scoring using a focussed radiation beam, e.g. laser
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03B—MANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
- C03B33/00—Severing cooled glass
- C03B33/02—Cutting or splitting sheet glass or ribbons; Apparatus or machines therefor
- C03B33/023—Cutting or splitting sheet glass or ribbons; Apparatus or machines therefor the sheet or ribbon being in a horizontal position
- C03B33/033—Apparatus for opening score lines in glass sheets
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03B—MANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
- C03B33/00—Severing cooled glass
- C03B33/09—Severing cooled glass by thermal shock
- C03B33/091—Severing cooled glass by thermal shock using at least one focussed radiation beam, e.g. laser beam
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03B—MANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
- C03B33/00—Severing cooled glass
- C03B33/09—Severing cooled glass by thermal shock
- C03B33/091—Severing cooled glass by thermal shock using at least one focussed radiation beam, e.g. laser beam
- C03B33/093—Severing cooled glass by thermal shock using at least one focussed radiation beam, e.g. laser beam using two or more focussed radiation beams
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67092—Apparatus for mechanical treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67282—Marking devices
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K2103/00—Materials to be soldered, welded or cut
- B23K2103/50—Inorganic material, e.g. metals, not provided for in B23K2103/02 – B23K2103/26
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B65—CONVEYING; PACKING; STORING; HANDLING THIN OR FILAMENTARY MATERIAL
- B65G—TRANSPORT OR STORAGE DEVICES, e.g. CONVEYORS FOR LOADING OR TIPPING, SHOP CONVEYOR SYSTEMS OR PNEUMATIC TUBE CONVEYORS
- B65G2249/00—Aspects relating to conveying systems for the manufacture of fragile sheets
- B65G2249/04—Arrangements of vacuum systems or suction cups
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/02—Details
- H05K1/03—Use of materials for the substrate
- H05K1/0306—Inorganic insulating substrates, e.g. ceramic, glass
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
- H05K2201/09—Shape and layout
- H05K2201/09009—Substrate related
- H05K2201/09036—Recesses or grooves in insulating substrate
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
- H05K2201/09—Shape and layout
- H05K2201/09009—Substrate related
- H05K2201/0909—Preformed cutting or breaking line
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
- H05K2203/30—Details of processes not otherwise provided for in H05K2203/01 - H05K2203/17
- H05K2203/302—Bending a rigid substrate; Breaking rigid substrates by bending
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/0011—Working of insulating substrates or insulating layers
- H05K3/0017—Etching of the substrate by chemical or physical means
- H05K3/0026—Etching of the substrate by chemical or physical means by laser ablation
- H05K3/0029—Etching of the substrate by chemical or physical means by laser ablation of inorganic insulating material
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P40/00—Technologies relating to the processing of minerals
- Y02P40/50—Glass production, e.g. reusing waste heat during processing or shaping
- Y02P40/57—Improving the yield, e-g- reduction of reject rates
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Optics & Photonics (AREA)
- Materials Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Mechanical Engineering (AREA)
- Toxicology (AREA)
- Health & Medical Sciences (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Thermal Sciences (AREA)
- Plasma & Fusion (AREA)
- Re-Forming, After-Treatment, Cutting And Transporting Of Glass Products (AREA)
- Processing Of Stones Or Stones Resemblance Materials (AREA)
- Liquid Crystal (AREA)
- Laser Beam Processing (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP381259/2004 | 2004-12-28 | ||
| JP2004381259 | 2004-12-28 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN101087678A true CN101087678A (zh) | 2007-12-12 |
Family
ID=36614937
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNA2005800444232A Pending CN101087678A (zh) | 2004-12-28 | 2005-12-27 | 脆性材料基板的截断方法及基板截断系统 |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US20080305615A1 (enExample) |
| EP (1) | EP1862280A1 (enExample) |
| JP (1) | JP4666391B2 (enExample) |
| KR (1) | KR100881466B1 (enExample) |
| CN (1) | CN101087678A (enExample) |
| TW (1) | TW200633808A (enExample) |
| WO (1) | WO2006070825A1 (enExample) |
Cited By (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101530951B (zh) * | 2008-03-13 | 2012-03-14 | 富士迈半导体精密工业(上海)有限公司 | 激光切割脆性基板的方法及脆性基板 |
| CN102442770A (zh) * | 2010-09-10 | 2012-05-09 | 三星钻石工业股份有限公司 | 激光割断装置 |
| CN102975296A (zh) * | 2011-09-05 | 2013-03-20 | 三星钻石工业股份有限公司 | 分断装置 |
| CN103030263A (zh) * | 2011-09-28 | 2013-04-10 | 三星钻石工业股份有限公司 | 母基板的分断方法 |
| TWI548478B (zh) * | 2010-07-21 | 2016-09-11 | 3D 麥可梅克公司 | 借助於雷射將由易脆裂的材料製成的圓的平板分割成多個矩形單板的方法 |
| TWI580652B (zh) * | 2009-11-30 | 2017-05-01 | 康寧公司 | 用以在包括壓縮表面層及內部張力層之強化玻璃基板中形成相交刻劃孔口的方法 |
| TWI587960B (zh) * | 2012-11-29 | 2017-06-21 | Mitsuboshi Diamond Ind Co Ltd | Laser processing method and laser processing device |
| CN106940487A (zh) * | 2016-01-05 | 2017-07-11 | 三星钻石工业股份有限公司 | 基板断开方法 |
| CN107379292A (zh) * | 2017-09-15 | 2017-11-24 | 京东方科技集团股份有限公司 | 显示面板的切割方法、系统和存储介质 |
| CN108367962A (zh) * | 2015-12-02 | 2018-08-03 | 肖特股份有限公司 | 从片状玻璃或玻璃陶瓷元件激光辅助地分离局部部段的方法 |
| CN111390399A (zh) * | 2020-03-12 | 2020-07-10 | 上海柏楚电子科技股份有限公司 | 基于冷却点的切割控制方法、系统、电子设备与介质 |
| CN114349309A (zh) * | 2020-10-12 | 2022-04-15 | Agc株式会社 | 玻璃制造装置及玻璃制造方法 |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8006566B2 (en) * | 2006-07-28 | 2011-08-30 | Alliance For Sustainable Energy, Llc | Screening of silicon wafers used in photovoltaics |
| WO2012108882A1 (en) | 2011-02-11 | 2012-08-16 | Alliance For Sustainable Energy, Llc | Wafer screening device and methods for wafer screening |
| JP5102557B2 (ja) * | 2007-08-09 | 2012-12-19 | 三星ダイヤモンド工業株式会社 | サファイア基板の分断方法 |
| KR100949152B1 (ko) | 2007-11-23 | 2010-03-25 | 삼성코닝정밀유리 주식회사 | 유리 기판 레이저 절단 장치 |
| JP5090897B2 (ja) * | 2007-12-28 | 2012-12-05 | 株式会社ディスコ | ウェーハの分割方法 |
| KR100890764B1 (ko) | 2008-01-25 | 2009-03-26 | 삼성코닝정밀유리 주식회사 | 가공 테이블 일체형 유리 기판 브레이킹 장치 |
| JP5170668B2 (ja) * | 2008-06-04 | 2013-03-27 | 株式会社ジャパンディスプレイセントラル | 基板装置およびその製造方法 |
| JP2009294461A (ja) * | 2008-06-05 | 2009-12-17 | Toshiba Mobile Display Co Ltd | 液晶表示装置及びその製造方法 |
| JP5127669B2 (ja) * | 2008-10-31 | 2013-01-23 | パナソニック株式会社 | 半導体ウェハ |
| KR101041137B1 (ko) * | 2009-03-25 | 2011-06-13 | 삼성모바일디스플레이주식회사 | 기판 절단 장치 및 이를 이용한 기판 절단 방법 |
| KR20100107253A (ko) * | 2009-03-25 | 2010-10-05 | 삼성모바일디스플레이주식회사 | 기판 절단 장치 및 이를 이용한 기판 절단 방법 |
| US8932510B2 (en) | 2009-08-28 | 2015-01-13 | Corning Incorporated | Methods for laser cutting glass substrates |
| US8946590B2 (en) | 2009-11-30 | 2015-02-03 | Corning Incorporated | Methods for laser scribing and separating glass substrates |
| US20110127242A1 (en) * | 2009-11-30 | 2011-06-02 | Xinghua Li | Methods for laser scribing and separating glass substrates |
| JP5129826B2 (ja) * | 2010-02-05 | 2013-01-30 | 三星ダイヤモンド工業株式会社 | 脆性材料基板のブレイク方法 |
| JP5210356B2 (ja) * | 2010-06-14 | 2013-06-12 | 三星ダイヤモンド工業株式会社 | 脆性材料基板のスクライブ方法 |
| TWI513670B (zh) | 2010-08-31 | 2015-12-21 | Corning Inc | 分離強化玻璃基板之方法 |
| DE112012003162T5 (de) * | 2011-07-29 | 2014-04-17 | Ats Automation Tooling Systems Inc. | Systeme und Verfahren zum Herstellen dünner Siliziumstäbe |
| US8677783B2 (en) * | 2011-11-28 | 2014-03-25 | Corning Incorporated | Method for low energy separation of a glass ribbon |
| JP6047874B2 (ja) * | 2011-12-06 | 2016-12-21 | 三菱電機株式会社 | 半導体装置の製造方法 |
| JP2013136074A (ja) * | 2011-12-28 | 2013-07-11 | Mitsuboshi Diamond Industrial Co Ltd | 分断装置、被加工物の分断方法、および光学素子パターン付き基板の分断方法 |
| US9938180B2 (en) | 2012-06-05 | 2018-04-10 | Corning Incorporated | Methods of cutting glass using a laser |
| CN104364208B (zh) * | 2012-06-28 | 2017-12-12 | 旭硝子株式会社 | 玻璃基板的切割方法及玻璃基板的制造方法 |
| US9610653B2 (en) | 2012-09-21 | 2017-04-04 | Electro Scientific Industries, Inc. | Method and apparatus for separation of workpieces and articles produced thereby |
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| DE112013007305A5 (de) | 2013-08-07 | 2016-06-02 | Trumpf Laser- Und Systemtechnik Gmbh | Verfahren zum Bearbeiten eines plattenartigen Werkstückes mit einer transparenten, gläsernen, glasartigen keramischen und/oder kristallinen Lage, Trennvorrichtung für ein derartiges Werkstück sowie Produkt aus einem derartigen Werkstück |
| JP2015050953A (ja) * | 2013-09-06 | 2015-03-19 | ブロードビュー株式会社 | 海苔レーザー加工装置及び海苔レーザー加工方法 |
| US9154138B2 (en) * | 2013-10-11 | 2015-10-06 | Palo Alto Research Center Incorporated | Stressed substrates for transient electronic systems |
| KR101484091B1 (ko) * | 2013-11-04 | 2015-01-19 | 코닝정밀소재 주식회사 | 강화유리 절단방법 및 강화유리 절단장치 |
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| EP3183222B1 (en) * | 2014-08-20 | 2019-12-25 | Corning Incorporated | Method for yielding high edge strength in cutting of flexible thin glass |
| US20160172243A1 (en) * | 2014-12-11 | 2016-06-16 | Nxp B.V. | Wafer material removal |
| TWI543834B (zh) * | 2015-04-24 | 2016-08-01 | 納諾股份有限公司 | 脆性物件切斷裝置及其切斷方法 |
| TWI627010B (zh) * | 2015-04-24 | 2018-06-21 | 納諾股份有限公司 | 脆性物件切斷裝置 |
| MX379048B (es) * | 2015-06-10 | 2025-03-10 | Bando Kiko Co | Metodo para recortar placa de vidrio y colocar placa de vidrio recortada y dispositivo para ello. |
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| JPS5325997A (en) * | 1977-07-06 | 1978-03-10 | Toshiba Corp | Laser scribing method |
| JPH0437492A (ja) * | 1990-05-31 | 1992-02-07 | Shunichi Maekawa | 脆性材料の切断法 |
| JPH09150286A (ja) * | 1995-06-26 | 1997-06-10 | Corning Inc | 脆弱性材料切断方法および装置 |
| DE69629704T2 (de) * | 1995-08-31 | 2004-07-08 | Corning Inc. | Verfahren und vorrichtung zum zerbrechen von sprödem material |
| KR100626983B1 (ko) * | 1999-06-18 | 2006-09-22 | 미쓰보시 다이야몬도 고교 가부시키가이샤 | 레이저를 이용한 스크라이브 방법 |
| JP2002153984A (ja) | 2000-11-22 | 2002-05-28 | Seiko Epson Corp | 基板分割方法及びこれを用いた液晶装置の製造方法 |
| JP3802442B2 (ja) * | 2000-12-01 | 2006-07-26 | エルジー電子株式会社 | ガラス切断方法および装置 |
| TW592868B (en) * | 2001-07-18 | 2004-06-21 | Mitsuboshi Diamond Ind Co Ltd | Device and method for scribing fragile material substrate |
| TW568809B (en) * | 2001-09-21 | 2004-01-01 | Mitsuboshi Diamond Ind Co Ltd | Method for scribing substrate of brittle material and scriber |
| JP2004223796A (ja) * | 2003-01-21 | 2004-08-12 | Kyoto Seisakusho Co Ltd | 脆性材料の割断加工方法 |
-
2005
- 2005-12-27 WO PCT/JP2005/023940 patent/WO2006070825A1/ja not_active Ceased
- 2005-12-27 CN CNA2005800444232A patent/CN101087678A/zh active Pending
- 2005-12-27 JP JP2006550813A patent/JP4666391B2/ja not_active Expired - Fee Related
- 2005-12-27 US US11/722,355 patent/US20080305615A1/en not_active Abandoned
- 2005-12-27 TW TW094146668A patent/TW200633808A/zh not_active IP Right Cessation
- 2005-12-27 EP EP05822856A patent/EP1862280A1/en not_active Withdrawn
- 2005-12-27 KR KR1020077015225A patent/KR100881466B1/ko not_active Expired - Fee Related
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| CN101530951B (zh) * | 2008-03-13 | 2012-03-14 | 富士迈半导体精密工业(上海)有限公司 | 激光切割脆性基板的方法及脆性基板 |
| TWI580652B (zh) * | 2009-11-30 | 2017-05-01 | 康寧公司 | 用以在包括壓縮表面層及內部張力層之強化玻璃基板中形成相交刻劃孔口的方法 |
| TWI548478B (zh) * | 2010-07-21 | 2016-09-11 | 3D 麥可梅克公司 | 借助於雷射將由易脆裂的材料製成的圓的平板分割成多個矩形單板的方法 |
| CN102442770A (zh) * | 2010-09-10 | 2012-05-09 | 三星钻石工业股份有限公司 | 激光割断装置 |
| CN102442770B (zh) * | 2010-09-10 | 2014-12-10 | 三星钻石工业股份有限公司 | 激光割断装置 |
| CN102975296A (zh) * | 2011-09-05 | 2013-03-20 | 三星钻石工业股份有限公司 | 分断装置 |
| CN103030263A (zh) * | 2011-09-28 | 2013-04-10 | 三星钻石工业股份有限公司 | 母基板的分断方法 |
| CN103030263B (zh) * | 2011-09-28 | 2016-01-27 | 三星钻石工业股份有限公司 | 母基板的分断方法 |
| TWI587960B (zh) * | 2012-11-29 | 2017-06-21 | Mitsuboshi Diamond Ind Co Ltd | Laser processing method and laser processing device |
| CN108367962A (zh) * | 2015-12-02 | 2018-08-03 | 肖特股份有限公司 | 从片状玻璃或玻璃陶瓷元件激光辅助地分离局部部段的方法 |
| US10737967B2 (en) | 2015-12-02 | 2020-08-11 | Schott Ag | Method for laser-assisted separation of a portion from a sheet-like glass or glass ceramic element |
| CN106940487A (zh) * | 2016-01-05 | 2017-07-11 | 三星钻石工业股份有限公司 | 基板断开方法 |
| CN107379292A (zh) * | 2017-09-15 | 2017-11-24 | 京东方科技集团股份有限公司 | 显示面板的切割方法、系统和存储介质 |
| CN107379292B (zh) * | 2017-09-15 | 2019-07-02 | 京东方科技集团股份有限公司 | 显示面板的切割方法、系统和存储介质 |
| CN111390399A (zh) * | 2020-03-12 | 2020-07-10 | 上海柏楚电子科技股份有限公司 | 基于冷却点的切割控制方法、系统、电子设备与介质 |
| CN111390399B (zh) * | 2020-03-12 | 2022-02-15 | 上海柏楚电子科技股份有限公司 | 基于冷却点的切割控制方法、系统、电子设备与介质 |
| CN114349309A (zh) * | 2020-10-12 | 2022-04-15 | Agc株式会社 | 玻璃制造装置及玻璃制造方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| US20080305615A1 (en) | 2008-12-11 |
| KR20070094756A (ko) | 2007-09-21 |
| WO2006070825A1 (ja) | 2006-07-06 |
| TW200633808A (en) | 2006-10-01 |
| JPWO2006070825A1 (ja) | 2008-06-12 |
| JP4666391B2 (ja) | 2011-04-06 |
| TWI364339B (enExample) | 2012-05-21 |
| EP1862280A1 (en) | 2007-12-05 |
| KR100881466B1 (ko) | 2009-02-06 |
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