JP6047874B2 - 半導体装置の製造方法 - Google Patents
半導体装置の製造方法 Download PDFInfo
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- JP6047874B2 JP6047874B2 JP2011266457A JP2011266457A JP6047874B2 JP 6047874 B2 JP6047874 B2 JP 6047874B2 JP 2011266457 A JP2011266457 A JP 2011266457A JP 2011266457 A JP2011266457 A JP 2011266457A JP 6047874 B2 JP6047874 B2 JP 6047874B2
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- 239000004065 semiconductor Substances 0.000 title claims description 41
- 238000004519 manufacturing process Methods 0.000 title claims description 15
- 238000003776 cleavage reaction Methods 0.000 claims description 97
- 230000007017 scission Effects 0.000 claims description 97
- 239000000758 substrate Substances 0.000 claims description 31
- 238000000034 method Methods 0.000 claims description 7
- 239000000463 material Substances 0.000 description 7
- 230000002250 progressing effect Effects 0.000 description 3
- 239000013078 crystal Substances 0.000 description 2
- 229910003460 diamond Inorganic materials 0.000 description 2
- 239000010432 diamond Substances 0.000 description 2
- 238000006073 displacement reaction Methods 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 230000001939 inductive effect Effects 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/09—Processes or apparatus for excitation, e.g. pumping
- H01S3/091—Processes or apparatus for excitation, e.g. pumping using optical pumping
- H01S3/094—Processes or apparatus for excitation, e.g. pumping using optical pumping by coherent light
- H01S3/0941—Processes or apparatus for excitation, e.g. pumping using optical pumping by coherent light of a laser diode
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/0201—Separation of the wafer into individual elements, e.g. by dicing, cleaving, etching or directly during growth
- H01S5/0202—Cleaving
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- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Optics & Photonics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Plasma & Fusion (AREA)
- Dicing (AREA)
- Semiconductor Lasers (AREA)
Description
図1は、本発明の実施の形態1に係る半導体装置の製造方法を示す斜視図である。半導体基板1の表面2には、詳細図示していないが、前工程で半導体基板1とは異なる材料からなる異種材料層を積層し、規則的なパターンで半導体素子3が形成されている。隣接する半導体素子3の間に、切断しろ部分であるダイシングライン4が存在する。ダイシングライン4の中心線が所望の劈開線5である。劈開がダイシングライン4の端4a,4bを越えて半導体素子3内に進んではいけない。
図2は、本発明の実施の形態2に係る半導体装置の製造方法を示す斜視図である。予備亀裂9は平面視においてX字型である。予備亀裂10は、平面視において所望の劈開線5に対して斜めの直線である。
図3は、本発明の実施の形態3に係る半導体装置の製造方法を示す斜視図である。予備亀裂11は、平面視において所望の劈開線5に対して斜めの直線であり、劈開の進行方向に進むにつれて所望の劈開線5の外側から所望の劈開線5に合流する。従って、実施の形態1と同様に所望の劈開線からの劈開のずれを低減することができる。
5 所望の劈開線
6 起点亀裂
7a,7b,9,10,11 予備亀裂
Claims (4)
- 半導体基板の表面において、所望の劈開線上に起点亀裂を形成し、前記所望の劈開線に斜めに交差する互いに離間した直線状の複数の予備亀裂を形成する工程と、
前記所望の劈開線に沿って前記起点亀裂から前記複数の予備亀裂を通過して前記半導体基板を劈開する工程とを備え、
各予備亀裂は、劈開の進行方向に進むにつれて前記所望の劈開線の外側から前記所望の劈開線に合流する亀裂を有し、前記所望の劈開線外側から前記所望の劈開線に合流する方向に幅を持ち、合流した劈開面において劈開方向に幅を持たないことを特徴とする半導体装置の製造方法。 - 各予備亀裂は、平面視においてV字型を形成する2つの直線部を持つことを特徴とする請求項1に記載の半導体装置の製造方法。
- 各予備亀裂は、平面視においてX字型を形成する2つの直線部を持つことを特徴とする請求項1に記載の半導体装置の製造方法。
- 前記複数の予備亀裂は、前記所望の劈開線の左右に互い違いに配置されていることを特徴とする請求項1に記載の半導体装置の製造方法。
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2011266457A JP6047874B2 (ja) | 2011-12-06 | 2011-12-06 | 半導体装置の製造方法 |
TW101128546A TWI469209B (zh) | 2011-12-06 | 2012-08-08 | 半導體裝置之製造方法 |
US13/588,119 US8673742B2 (en) | 2011-12-06 | 2012-08-17 | Method for manufacturing semiconductor device |
KR1020120132811A KR101537556B1 (ko) | 2011-12-06 | 2012-11-22 | 반도체장치의 제조방법 |
CN201210514862.7A CN103151308B (zh) | 2011-12-06 | 2012-12-05 | 半导体装置的制造方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2011266457A JP6047874B2 (ja) | 2011-12-06 | 2011-12-06 | 半導体装置の製造方法 |
Publications (3)
Publication Number | Publication Date |
---|---|
JP2013120759A JP2013120759A (ja) | 2013-06-17 |
JP2013120759A5 JP2013120759A5 (ja) | 2014-11-27 |
JP6047874B2 true JP6047874B2 (ja) | 2016-12-21 |
Family
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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JP2011266457A Active JP6047874B2 (ja) | 2011-12-06 | 2011-12-06 | 半導体装置の製造方法 |
Country Status (5)
Country | Link |
---|---|
US (1) | US8673742B2 (ja) |
JP (1) | JP6047874B2 (ja) |
KR (1) | KR101537556B1 (ja) |
CN (1) | CN103151308B (ja) |
TW (1) | TWI469209B (ja) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP7206962B2 (ja) * | 2019-01-31 | 2023-01-18 | 三菱電機株式会社 | 半導体基板の分離方法と分離用治具 |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2566288Y2 (ja) * | 1992-02-21 | 1998-03-25 | 昭和電工株式会社 | 回路用基板 |
JPH11274653A (ja) | 1998-03-25 | 1999-10-08 | Victor Co Of Japan Ltd | 半導体レ−ザ基板の劈開方法 |
JP2005268752A (ja) * | 2004-02-19 | 2005-09-29 | Canon Inc | レーザ割断方法、被割断部材および半導体素子チップ |
WO2006070825A1 (ja) * | 2004-12-28 | 2006-07-06 | Mitsuboshi Diamond Industrial Co., Ltd. | 脆性材料基板の分断方法および基板分断システム |
WO2007074688A1 (ja) * | 2005-12-26 | 2007-07-05 | Matsushita Electric Industrial Co., Ltd. | 窒化化合物半導体素子およびその製造方法 |
JP2007317935A (ja) | 2006-05-26 | 2007-12-06 | Canon Inc | 半導体基板、基板割断方法、および素子チップ製造方法 |
JP2008311547A (ja) * | 2007-06-18 | 2008-12-25 | Panasonic Corp | 半導体レーザ素子及び製造方法 |
KR101757937B1 (ko) * | 2009-02-09 | 2017-07-13 | 하마마츠 포토닉스 가부시키가이샤 | 가공대상물 절단방법 |
-
2011
- 2011-12-06 JP JP2011266457A patent/JP6047874B2/ja active Active
-
2012
- 2012-08-08 TW TW101128546A patent/TWI469209B/zh active
- 2012-08-17 US US13/588,119 patent/US8673742B2/en active Active
- 2012-11-22 KR KR1020120132811A patent/KR101537556B1/ko active IP Right Grant
- 2012-12-05 CN CN201210514862.7A patent/CN103151308B/zh active Active
Also Published As
Publication number | Publication date |
---|---|
US20130143388A1 (en) | 2013-06-06 |
TWI469209B (zh) | 2015-01-11 |
TW201324601A (zh) | 2013-06-16 |
US8673742B2 (en) | 2014-03-18 |
KR101537556B1 (ko) | 2015-07-17 |
CN103151308A (zh) | 2013-06-12 |
KR20130085924A (ko) | 2013-07-30 |
CN103151308B (zh) | 2015-05-06 |
JP2013120759A (ja) | 2013-06-17 |
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