KR100881466B1 - 취성재료 기판의 절단방법 및 기판절단 시스템 - Google Patents

취성재료 기판의 절단방법 및 기판절단 시스템 Download PDF

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Publication number
KR100881466B1
KR100881466B1 KR1020077015225A KR20077015225A KR100881466B1 KR 100881466 B1 KR100881466 B1 KR 100881466B1 KR 1020077015225 A KR1020077015225 A KR 1020077015225A KR 20077015225 A KR20077015225 A KR 20077015225A KR 100881466 B1 KR100881466 B1 KR 100881466B1
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South Korea
Prior art keywords
scribe line
substrate
laser beam
scribe
brake
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Expired - Fee Related
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KR1020077015225A
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English (en)
Korean (ko)
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KR20070094756A (ko
Inventor
쓰토무 우에노
겐지 오토다
고지 야마모토
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미쓰보시 다이야몬도 고교 가부시키가이샤
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    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/0011—Working of insulating substrates or insulating layers
    • H05K3/0044—Mechanical working of the substrate, e.g. drilling or punching
    • H05K3/0052—Depaneling, i.e. dividing a panel into circuit boards; Working of the edges of circuit boards
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/36—Removing material
    • B23K26/38—Removing material by boring or cutting
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/36—Removing material
    • B23K26/40—Removing material taking account of the properties of the material involved
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B28—WORKING CEMENT, CLAY, OR STONE
    • B28D—WORKING STONE OR STONE-LIKE MATERIALS
    • B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
    • B28D5/0005—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by breaking, e.g. dicing
    • B28D5/0011—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by breaking, e.g. dicing with preliminary treatment, e.g. weakening by scoring
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03B—MANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
    • C03B33/00—Severing cooled glass
    • C03B33/02—Cutting or splitting sheet glass or ribbons; Apparatus or machines therefor
    • C03B33/0222—Scoring using a focussed radiation beam, e.g. laser
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03B—MANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
    • C03B33/00—Severing cooled glass
    • C03B33/02—Cutting or splitting sheet glass or ribbons; Apparatus or machines therefor
    • C03B33/023—Cutting or splitting sheet glass or ribbons; Apparatus or machines therefor the sheet or ribbon being in a horizontal position
    • C03B33/033—Apparatus for opening score lines in glass sheets
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03B—MANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
    • C03B33/00—Severing cooled glass
    • C03B33/09—Severing cooled glass by thermal shock
    • C03B33/091—Severing cooled glass by thermal shock using at least one focussed radiation beam, e.g. laser beam
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03B—MANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
    • C03B33/00—Severing cooled glass
    • C03B33/09—Severing cooled glass by thermal shock
    • C03B33/091—Severing cooled glass by thermal shock using at least one focussed radiation beam, e.g. laser beam
    • C03B33/093—Severing cooled glass by thermal shock using at least one focussed radiation beam, e.g. laser beam using two or more focussed radiation beams
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67092—Apparatus for mechanical treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H01L21/67282—Marking devices
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K2103/00—Materials to be soldered, welded or cut
    • B23K2103/50—Inorganic material, e.g. metals, not provided for in B23K2103/02 – B23K2103/26
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B65—CONVEYING; PACKING; STORING; HANDLING THIN OR FILAMENTARY MATERIAL
    • B65G—TRANSPORT OR STORAGE DEVICES, e.g. CONVEYORS FOR LOADING OR TIPPING, SHOP CONVEYOR SYSTEMS OR PNEUMATIC TUBE CONVEYORS
    • B65G2249/00—Aspects relating to conveying systems for the manufacture of fragile sheets
    • B65G2249/04—Arrangements of vacuum systems or suction cups
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00—Printed circuits
    • H05K1/02—Details
    • H05K1/03—Use of materials for the substrate
    • H05K1/0306—Inorganic insulating substrates, e.g. ceramic, glass
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
    • H05K2201/09—Shape and layout
    • H05K2201/09009—Substrate related
    • H05K2201/09036—Recesses or grooves in insulating substrate
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
    • H05K2201/09—Shape and layout
    • H05K2201/09009—Substrate related
    • H05K2201/0909—Preformed cutting or breaking line
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
    • H05K2203/30—Details of processes not otherwise provided for in H05K2203/01 - H05K2203/17
    • H05K2203/302—Bending a rigid substrate; Breaking rigid substrates by bending
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/0011—Working of insulating substrates or insulating layers
    • H05K3/0017—Etching of the substrate by chemical or physical means
    • H05K3/0026—Etching of the substrate by chemical or physical means by laser ablation
    • H05K3/0029—Etching of the substrate by chemical or physical means by laser ablation of inorganic insulating material
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P40/00—Technologies relating to the processing of minerals
    • Y02P40/50—Glass production, e.g. reusing waste heat during processing or shaping
    • Y02P40/57—Improving the yield, e-g- reduction of reject rates

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Optics & Photonics (AREA)
  • Materials Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Mechanical Engineering (AREA)
  • Toxicology (AREA)
  • Health & Medical Sciences (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Thermal Sciences (AREA)
  • Plasma & Fusion (AREA)
  • Re-Forming, After-Treatment, Cutting And Transporting Of Glass Products (AREA)
  • Processing Of Stones Or Stones Resemblance Materials (AREA)
  • Liquid Crystal (AREA)
  • Laser Beam Processing (AREA)
KR1020077015225A 2004-12-28 2005-12-27 취성재료 기판의 절단방법 및 기판절단 시스템 Expired - Fee Related KR100881466B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2004381259 2004-12-28
JPJP-P-2004-00381259 2004-12-28

Publications (2)

Publication Number Publication Date
KR20070094756A KR20070094756A (ko) 2007-09-21
KR100881466B1 true KR100881466B1 (ko) 2009-02-06

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020077015225A Expired - Fee Related KR100881466B1 (ko) 2004-12-28 2005-12-27 취성재료 기판의 절단방법 및 기판절단 시스템

Country Status (7)

Country Link
US (1) US20080305615A1 (enExample)
EP (1) EP1862280A1 (enExample)
JP (1) JP4666391B2 (enExample)
KR (1) KR100881466B1 (enExample)
CN (1) CN101087678A (enExample)
TW (1) TW200633808A (enExample)
WO (1) WO2006070825A1 (enExample)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102216298B1 (ko) * 2020-04-28 2021-02-18 주식회사 아이티아이 세라믹 절단법 및 장비
KR102216294B1 (ko) * 2020-07-22 2021-02-18 주식회사 아이티아이 세라믹 절단법 및 장비
WO2021221378A1 (ko) * 2020-04-28 2021-11-04 주식회사 아이티아이 세라믹 절단법 및 장비

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US8006566B2 (en) * 2006-07-28 2011-08-30 Alliance For Sustainable Energy, Llc Screening of silicon wafers used in photovoltaics
WO2012108882A1 (en) 2011-02-11 2012-08-16 Alliance For Sustainable Energy, Llc Wafer screening device and methods for wafer screening
JP5102557B2 (ja) * 2007-08-09 2012-12-19 三星ダイヤモンド工業株式会社 サファイア基板の分断方法
KR100949152B1 (ko) 2007-11-23 2010-03-25 삼성코닝정밀유리 주식회사 유리 기판 레이저 절단 장치
JP5090897B2 (ja) * 2007-12-28 2012-12-05 株式会社ディスコ ウェーハの分割方法
KR100890764B1 (ko) 2008-01-25 2009-03-26 삼성코닝정밀유리 주식회사 가공 테이블 일체형 유리 기판 브레이킹 장치
CN101530951B (zh) * 2008-03-13 2012-03-14 富士迈半导体精密工业（上海）有限公司 激光切割脆性基板的方法及脆性基板
JP5170668B2 (ja) * 2008-06-04 2013-03-27 株式会社ジャパンディスプレイセントラル 基板装置およびその製造方法
JP2009294461A (ja) * 2008-06-05 2009-12-17 Toshiba Mobile Display Co Ltd 液晶表示装置及びその製造方法
JP5127669B2 (ja) * 2008-10-31 2013-01-23 パナソニック株式会社 半導体ウェハ
KR20100107253A (ko) * 2009-03-25 2010-10-05 삼성모바일디스플레이주식회사 기판 절단 장치 및 이를 이용한 기판 절단 방법
KR101041137B1 (ko) * 2009-03-25 2011-06-13 삼성모바일디스플레이주식회사 기판 절단 장치 및 이를 이용한 기판 절단 방법
US8932510B2 (en) * 2009-08-28 2015-01-13 Corning Incorporated Methods for laser cutting glass substrates
EP2724993B1 (en) * 2009-11-30 2016-02-03 Corning Incorporated Methods for laser scribing and separating glass substrates
US20110127242A1 (en) * 2009-11-30 2011-06-02 Xinghua Li Methods for laser scribing and separating glass substrates
US8946590B2 (en) 2009-11-30 2015-02-03 Corning Incorporated Methods for laser scribing and separating glass substrates
JP5129826B2 (ja) * 2010-02-05 2013-01-30 三星ダイヤモンド工業株式会社 脆性材料基板のブレイク方法
JP5210356B2 (ja) * 2010-06-14 2013-06-12 三星ダイヤモンド工業株式会社 脆性材料基板のスクライブ方法
DE102010032029B4 (de) * 2010-07-21 2012-09-13 Jenoptik Automatisierungstechnik Gmbh Verfahren zum Trennen einer runden Planplatte aus sprödbrüchigem Material in mehrere rechteckige Einzelplatten mittels Laser
US8720228B2 (en) 2010-08-31 2014-05-13 Corning Incorporated Methods of separating strengthened glass substrates
JP5202595B2 (ja) * 2010-09-10 2013-06-05 三星ダイヤモンド工業株式会社 レーザ割断装置
CN103781587B (zh) * 2011-07-29 2016-09-07 Ats自动化加工系统公司 用于生产硅细棒的系统和方法
JP5353978B2 (ja) * 2011-09-05 2013-11-27 三星ダイヤモンド工業株式会社 分断装置
JP2013071335A (ja) * 2011-09-28 2013-04-22 Mitsuboshi Diamond Industrial Co Ltd マザー基板の分断方法
US8677783B2 (en) * 2011-11-28 2014-03-25 Corning Incorporated Method for low energy separation of a glass ribbon
JP6047874B2 (ja) * 2011-12-06 2016-12-21 三菱電機株式会社 半導体装置の製造方法
JP2013136074A (ja) * 2011-12-28 2013-07-11 Mitsuboshi Diamond Industrial Co Ltd 分断装置、被加工物の分断方法、および光学素子パターン付き基板の分断方法
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KR20150035577A (ko) * 2012-06-28 2015-04-06 아사히 가라스 가부시키가이샤 유리 기판의 절단 방법 및 유리 기판의 제조 방법
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JP6035127B2 (ja) * 2012-11-29 2016-11-30 三星ダイヤモンド工業株式会社 レーザ加工方法及びレーザ加工装置
CN105592994B (zh) * 2013-08-07 2018-10-12 通快激光与系统工程有限公司 用于加工板状工件的方法和装置及由这类工件制成的产品
JP2015050953A (ja) * 2013-09-06 2015-03-19 ブロードビュー株式会社 海苔レーザー加工装置及び海苔レーザー加工方法
US9154138B2 (en) * 2013-10-11 2015-10-06 Palo Alto Research Center Incorporated Stressed substrates for transient electronic systems
KR101484091B1 (ko) * 2013-11-04 2015-01-19 코닝정밀소재 주식회사 강화유리 절단방법 및 강화유리 절단장치
KR101536983B1 (ko) * 2014-02-25 2015-07-15 삼목강업주식회사 스프링용 레이저 마킹 시스템
KR102448778B1 (ko) * 2014-08-20 2022-09-29 코닝 인코포레이티드 얇은 가요성 유리의 절단시 높은 에지 강도를 산출하기 위한 장치 및 방법
US20160172243A1 (en) * 2014-12-11 2016-06-16 Nxp B.V. Wafer material removal
TWI543834B (zh) * 2015-04-24 2016-08-01 納諾股份有限公司 脆性物件切斷裝置及其切斷方法
TWI627010B (zh) * 2015-04-24 2018-06-21 納諾股份有限公司 脆性物件切斷裝置
RU2671239C1 (ru) * 2015-06-10 2018-10-30 Бандо Кико Ко., Лтд. Способ вырезания листового стекла и позиционирования вырезанного листового стекла и устройство для его осуществления
DE102015120950B4 (de) * 2015-12-02 2022-03-03 Schott Ag Verfahren zum lasergestützten Ablösen eines Teilstücks von einem flächigen Glas- oder Glaskeramikelement, flächiges zumindest teilweise keramisiertes Glaselement oder Glaskeramikelement und Kochfläche umfassend ein flächiges Glas- oder Glaskeramikelement
JP6638400B2 (ja) * 2016-01-05 2020-01-29 三星ダイヤモンド工業株式会社 基板分断方法
US10903173B2 (en) 2016-10-20 2021-01-26 Palo Alto Research Center Incorporated Pre-conditioned substrate
CN106526941A (zh) * 2016-12-30 2017-03-22 惠科股份有限公司 显示面板加工工艺的改善方法、显示面板加工设备
CN107379292B (zh) * 2017-09-15 2019-07-02 京东方科技集团股份有限公司 显示面板的切割方法、系统和存储介质
US10717669B2 (en) 2018-05-16 2020-07-21 Palo Alto Research Center Incorporated Apparatus and method for creating crack initiation sites in a self-fracturing frangible member
CN111112808A (zh) * 2018-10-30 2020-05-08 三星钻石工业股份有限公司 基板分断装置及基板分断方法
CN111390399B (zh) * 2020-03-12 2022-02-15 上海柏楚电子科技股份有限公司 基于冷却点的切割控制方法、系统、电子设备与介质
JP7552230B2 (ja) * 2020-10-12 2024-09-18 Ａｇｃ株式会社 ガラス製造装置、及びガラス製造方法

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JPH0437492A (ja) * 1990-05-31 1992-02-07 Shunichi Maekawa 脆性材料の切断法
JP2002153984A (ja) 2000-11-22 2002-05-28 Seiko Epson Corp 基板分割方法及びこれを用いた液晶装置の製造方法

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US20080305615A1 (en) 2008-12-11
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