CN101069088B - 表面检查装置 - Google Patents
表面检查装置 Download PDFInfo
- Publication number
- CN101069088B CN101069088B CN2005800411775A CN200580041177A CN101069088B CN 101069088 B CN101069088 B CN 101069088B CN 2005800411775 A CN2005800411775 A CN 2005800411775A CN 200580041177 A CN200580041177 A CN 200580041177A CN 101069088 B CN101069088 B CN 101069088B
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- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 238000007689 inspection Methods 0.000 title abstract description 5
- 230000002093 peripheral effect Effects 0.000 claims abstract description 138
- 238000003384 imaging method Methods 0.000 claims abstract description 28
- 230000003287 optical effect Effects 0.000 claims abstract description 23
- 229910052710 silicon Inorganic materials 0.000 description 54
- 239000010703 silicon Substances 0.000 description 54
- 235000012431 wafers Nutrition 0.000 description 54
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 53
- 238000000034 method Methods 0.000 description 14
- 230000002950 deficient Effects 0.000 description 7
- 239000002245 particle Substances 0.000 description 6
- 230000015556 catabolic process Effects 0.000 description 4
- 238000006731 degradation reaction Methods 0.000 description 4
- 230000009466 transformation Effects 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 3
- 230000001360 synchronised effect Effects 0.000 description 3
- 230000000007 visual effect Effects 0.000 description 2
- 230000005465 channeling Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- ZZUFCTLCJUWOSV-UHFFFAOYSA-N furosemide Chemical compound C1=C(Cl)C(S(=O)(=O)N)=CC(C(O)=O)=C1NCC1=CC=CO1 ZZUFCTLCJUWOSV-UHFFFAOYSA-N 0.000 description 1
- 238000010191 image analysis Methods 0.000 description 1
- 238000003754 machining Methods 0.000 description 1
- 150000003376 silicon Chemical class 0.000 description 1
Images
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
- G01B11/00—Measuring arrangements characterised by the use of optical techniques
- G01B11/30—Measuring arrangements characterised by the use of optical techniques for measuring roughness or irregularity of surfaces
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/84—Systems specially adapted for particular applications
- G01N21/88—Investigating the presence of flaws or contamination
- G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
- G01N21/9506—Optical discs
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/84—Systems specially adapted for particular applications
- G01N21/88—Investigating the presence of flaws or contamination
- G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
- G01N21/9501—Semiconductor wafers
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/84—Systems specially adapted for particular applications
- G01N21/88—Investigating the presence of flaws or contamination
- G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
- G01N21/9501—Semiconductor wafers
- G01N21/9503—Wafer edge inspection
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/84—Systems specially adapted for particular applications
- G01N21/88—Investigating the presence of flaws or contamination
- G01N21/8806—Specially adapted optical and illumination features
- G01N2021/8841—Illumination and detection on two sides of object
Landscapes
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Immunology (AREA)
- Pathology (AREA)
- Analytical Chemistry (AREA)
- Biochemistry (AREA)
- General Health & Medical Sciences (AREA)
- Life Sciences & Earth Sciences (AREA)
- Health & Medical Sciences (AREA)
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Investigating Materials By The Use Of Optical Means Adapted For Particular Applications (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
Abstract
Description
Claims (4)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP345141/2004 | 2004-11-30 | ||
JP2004345141 | 2004-11-30 | ||
PCT/JP2005/021997 WO2006059647A1 (ja) | 2004-11-30 | 2005-11-30 | 表面検査装置及び表面検査方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN101069088A CN101069088A (zh) | 2007-11-07 |
CN101069088B true CN101069088B (zh) | 2010-05-12 |
Family
ID=36565080
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN2005800411775A Active CN101069088B (zh) | 2004-11-30 | 2005-11-30 | 表面检查装置 |
Country Status (6)
Country | Link |
---|---|
US (1) | US7403278B2 (zh) |
JP (1) | JP4990630B2 (zh) |
KR (1) | KR100904007B1 (zh) |
CN (1) | CN101069088B (zh) |
TW (1) | TWI388798B (zh) |
WO (1) | WO2006059647A1 (zh) |
Families Citing this family (30)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7622666B2 (en) | 2005-06-16 | 2009-11-24 | Soliant Energy Inc. | Photovoltaic concentrator modules and systems having a heat dissipating element located within a volume in which light rays converge from an optical concentrating element towards a photovoltaic receiver |
WO2007044384A2 (en) * | 2005-10-04 | 2007-04-19 | Soliant Energy, Inc. | A heatsink for concentrating or focusing optical/electrical energy conversion systems |
WO2007044385A2 (en) * | 2005-10-04 | 2007-04-19 | Practical Instruments, Inc. | Self-powered systems and methods using auxiliary solar cells |
WO2007084517A2 (en) * | 2006-01-17 | 2007-07-26 | Soliant Energy, Inc. | Concentrating solar panel and related systems and methods |
WO2007084518A2 (en) * | 2006-01-17 | 2007-07-26 | Soliant Energy, Inc. | A hybrid primary optical component for optical concentrators |
CN101021489A (zh) * | 2006-02-15 | 2007-08-22 | 奥林巴斯株式会社 | 外观检查装置 |
US20080142078A1 (en) * | 2006-09-30 | 2008-06-19 | Johnson Richard L | Optical concentrators having one or more spot focus and related methods |
US20090000662A1 (en) * | 2007-03-11 | 2009-01-01 | Harwood Duncan W J | Photovoltaic receiver for solar concentrator applications |
DE102007024525B4 (de) * | 2007-03-19 | 2009-05-28 | Vistec Semiconductor Systems Gmbh | Vorrichtung und Verfahren zur Bewertung von Defekten am Randbereich eines Wafers |
JP5060808B2 (ja) * | 2007-03-27 | 2012-10-31 | オリンパス株式会社 | 外観検査装置 |
KR101099264B1 (ko) | 2007-03-30 | 2011-12-26 | 시바우라 메카트로닉스 가부시키가이샤 | 반도체 웨이퍼의 가장자리 검사 장치 및 가장자리 검사 방법 |
KR101120226B1 (ko) * | 2007-04-27 | 2012-03-20 | 시바우라 메카트로닉스 가부시키가이샤 | 표면 검사 장치 |
US20090000612A1 (en) * | 2007-05-04 | 2009-01-01 | Hines Braden E | Apparatuses and methods for shaping reflective surfaces of optical concentrators |
WO2009013887A1 (ja) * | 2007-07-25 | 2009-01-29 | Nikon Corporation | 端部検査装置 |
JP5183146B2 (ja) * | 2007-10-23 | 2013-04-17 | 芝浦メカトロニクス株式会社 | 円盤状基板の検査装置 |
DE112008002813T5 (de) * | 2007-10-23 | 2011-01-27 | Shibaura Mechatronics Corp., Yokohama | Prüfvorrichtung für scheibenförmige Substrate |
JP5183147B2 (ja) * | 2007-10-23 | 2013-04-17 | 芝浦メカトロニクス株式会社 | 円盤状基板の検査装置 |
JP5372359B2 (ja) * | 2007-11-07 | 2013-12-18 | 芝浦メカトロニクス株式会社 | 板状基板のエッジ検査装置 |
JP5100371B2 (ja) * | 2007-12-28 | 2012-12-19 | 株式会社山梨技術工房 | ウェハ周縁端の異物検査方法、及び異物検査装置 |
WO2009099142A1 (ja) * | 2008-02-06 | 2009-08-13 | Nikon Corporation | 表面検査装置および表面検査方法 |
WO2009139896A2 (en) * | 2008-05-16 | 2009-11-19 | Soliant Energy, Inc. | Concentrating photovoltaic solar panel |
JP5144401B2 (ja) * | 2008-07-01 | 2013-02-13 | 直江津電子工業株式会社 | ウエハ用検査装置 |
US20110199480A1 (en) * | 2009-07-09 | 2011-08-18 | Camtek Ltd. | Optical inspection system using multi-facet imaging |
KR101228459B1 (ko) * | 2010-09-09 | 2013-01-31 | 한미반도체 주식회사 | 웨이퍼 검사장치 및 이를 구비한 웨이퍼 검사 시스템 |
JP2013190309A (ja) * | 2012-03-13 | 2013-09-26 | Toshiba Corp | 欠陥検査装置 |
JP5490855B2 (ja) * | 2012-07-12 | 2014-05-14 | 芝浦メカトロニクス株式会社 | 板状基板のエッジ検査装置 |
KR20160040044A (ko) * | 2014-10-02 | 2016-04-12 | 삼성전자주식회사 | 패널 검사장치 및 검사방법 |
JP7132042B2 (ja) * | 2018-09-10 | 2022-09-06 | 株式会社ディスコ | 加工装置 |
JP6827086B2 (ja) * | 2019-09-25 | 2021-02-10 | 東京エレクトロン株式会社 | 基板撮像装置 |
JP6788089B2 (ja) * | 2019-10-23 | 2020-11-18 | 東京エレクトロン株式会社 | 基板処理方法、基板処理装置及びコンピュータ読み取り可能な記録媒体 |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1111351A (zh) * | 1993-12-06 | 1995-11-08 | 埃尔帕特朗尼股份公司 | 对容器透明区特别是入口区的光学检查方法及设备 |
CN1129803A (zh) * | 1994-10-20 | 1996-08-28 | 埃尔帕特朗尼股份公司 | 物品特别是瓶子的检验方法和检验设备 |
JP2003139523A (ja) * | 2001-11-02 | 2003-05-14 | Nippon Electro Sensari Device Kk | 表面欠陥検出方法および表面欠陥検出装置 |
Family Cites Families (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6294793B1 (en) * | 1992-12-03 | 2001-09-25 | Brown & Sharpe Surface Inspection Systems, Inc. | High speed optical inspection apparatus for a transparent disk using gaussian distribution analysis and method therefor |
US6262432B1 (en) * | 1992-12-03 | 2001-07-17 | Brown & Sharpe Surface Inspection Systems, Inc. | High speed surface inspection optical apparatus for a reflective disk using gaussian distribution analysis and method therefor |
JP2999925B2 (ja) * | 1994-07-18 | 2000-01-17 | 三洋電機株式会社 | 物品側面撮像装置 |
JPH11201906A (ja) * | 1998-01-12 | 1999-07-30 | N Tec:Kk | 物体の外観検査装置 |
DE69800328T2 (de) * | 1998-02-05 | 2001-02-01 | Wacker Siltronic Halbleitermat | Vorrichtung und Verfahren zur Inspektion der Mikrotextur am Umfang einer Halbleiterscheibe |
WO2003028089A1 (fr) * | 2001-09-19 | 2003-04-03 | Olympus Optical Co., Ltd. | Systeme de controle de tranches en semiconducteur |
JP3629244B2 (ja) | 2002-02-19 | 2005-03-16 | 本多エレクトロン株式会社 | ウエーハ用検査装置 |
JP3936220B2 (ja) * | 2002-03-28 | 2007-06-27 | 株式会社レイテックス | 端部傷検査装置 |
US7280200B2 (en) * | 2003-07-18 | 2007-10-09 | Ade Corporation | Detection of a wafer edge using collimated light |
US7280197B1 (en) * | 2004-07-27 | 2007-10-09 | Kla-Tehcor Technologies Corporation | Wafer edge inspection apparatus |
-
2005
- 2005-11-30 TW TW094142078A patent/TWI388798B/zh active
- 2005-11-30 JP JP2006547980A patent/JP4990630B2/ja active Active
- 2005-11-30 WO PCT/JP2005/021997 patent/WO2006059647A1/ja active Application Filing
- 2005-11-30 CN CN2005800411775A patent/CN101069088B/zh active Active
- 2005-11-30 KR KR1020077011535A patent/KR100904007B1/ko active IP Right Grant
-
2007
- 2007-05-29 US US11/754,417 patent/US7403278B2/en active Active
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1111351A (zh) * | 1993-12-06 | 1995-11-08 | 埃尔帕特朗尼股份公司 | 对容器透明区特别是入口区的光学检查方法及设备 |
CN1129803A (zh) * | 1994-10-20 | 1996-08-28 | 埃尔帕特朗尼股份公司 | 物品特别是瓶子的检验方法和检验设备 |
JP2003139523A (ja) * | 2001-11-02 | 2003-05-14 | Nippon Electro Sensari Device Kk | 表面欠陥検出方法および表面欠陥検出装置 |
Non-Patent Citations (2)
Title |
---|
JP特开平11-201906A 1999.07.30 |
JP特开平8-29146A 1996.02.02 |
Also Published As
Publication number | Publication date |
---|---|
TW200626869A (en) | 2006-08-01 |
KR20070064376A (ko) | 2007-06-20 |
US7403278B2 (en) | 2008-07-22 |
KR100904007B1 (ko) | 2009-06-22 |
CN101069088A (zh) | 2007-11-07 |
US20070222977A1 (en) | 2007-09-27 |
TWI388798B (zh) | 2013-03-11 |
JPWO2006059647A1 (ja) | 2008-06-05 |
WO2006059647A1 (ja) | 2006-06-08 |
JP4990630B2 (ja) | 2012-08-01 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C41 | Transfer of patent application or patent right or utility model | ||
TA01 | Transfer of patent application right |
Effective date of registration: 20071019 Address after: Kanagawa Applicant after: SHIBAURA MACHINE CO.,LTD. Co-applicant after: Covalent Materials Corp. Address before: Kanagawa Applicant before: SHIBAURA MACHINE CO.,LTD. Co-applicant before: TOSHIBA CERAMICS CO.,LTD. |
|
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
ASS | Succession or assignment of patent right |
Owner name: COVALENT SILICON CORPORATION Free format text: FORMER OWNER: COVALENT MATERIALS CORP. Effective date: 20130327 |
|
C41 | Transfer of patent application or patent right or utility model | ||
C56 | Change in the name or address of the patentee | ||
CP01 | Change in the name or title of a patent holder |
Address after: Kanagawa Patentee after: SHIBAURA MACHINE CO.,LTD. Patentee after: GLOBALWAFERS JAPAN Co.,Ltd. Address before: Kanagawa Patentee before: SHIBAURA MACHINE CO.,LTD. Patentee before: Crystal silicon Limited by Share Ltd. |
|
TR01 | Transfer of patent right |
Effective date of registration: 20130327 Address after: Kanagawa Patentee after: SHIBAURA MACHINE CO.,LTD. Patentee after: Crystal silicon Limited by Share Ltd. Address before: Kanagawa Patentee before: SHIBAURA MACHINE CO.,LTD. Patentee before: Covalent Materials Corp. |
|
TR01 | Transfer of patent right | ||
TR01 | Transfer of patent right |
Effective date of registration: 20180906 Address after: Niigata Prefecture, Japan Patentee after: GLOBALWAFERS JAPAN Co.,Ltd. Address before: Kanagawa Co-patentee before: GLOBALWAFERS JAPAN CO.,LTD. Patentee before: SHIBAURA MACHINE CO.,LTD. |