CN101038791A - 半导体存储装置 - Google Patents

半导体存储装置 Download PDF

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Publication number
CN101038791A
CN101038791A CNA2007100886135A CN200710088613A CN101038791A CN 101038791 A CN101038791 A CN 101038791A CN A2007100886135 A CNA2007100886135 A CN A2007100886135A CN 200710088613 A CN200710088613 A CN 200710088613A CN 101038791 A CN101038791 A CN 101038791A
Authority
CN
China
Prior art keywords
bit line
storage element
circuit
line
charging
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CNA2007100886135A
Other languages
English (en)
Chinese (zh)
Inventor
仓田胜一
林光昭
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Publication of CN101038791A publication Critical patent/CN101038791A/zh
Pending legal-status Critical Current

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Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/14—Dummy cell management; Sense reference voltage generators
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/24—Bit-line control circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/26—Sensing or reading circuits; Data output circuits
    • G11C16/28—Sensing or reading circuits; Data output circuits using differential sensing or reference cells, e.g. dummy cells
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/12—Bit line control circuits, e.g. drivers, boosters, pull-up circuits, pull-down circuits, precharging circuits, equalising circuits, for bit lines

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  • Read Only Memory (AREA)
CNA2007100886135A 2006-03-16 2007-03-16 半导体存储装置 Pending CN101038791A (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2006072899A JP4805700B2 (ja) 2006-03-16 2006-03-16 半導体記憶装置
JP2006072899 2006-03-16

Publications (1)

Publication Number Publication Date
CN101038791A true CN101038791A (zh) 2007-09-19

Family

ID=38517645

Family Applications (1)

Application Number Title Priority Date Filing Date
CNA2007100886135A Pending CN101038791A (zh) 2006-03-16 2007-03-16 半导体存储装置

Country Status (3)

Country Link
US (1) US7639559B2 (enExample)
JP (1) JP4805700B2 (enExample)
CN (1) CN101038791A (enExample)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5343916B2 (ja) 2010-04-16 2013-11-13 富士通セミコンダクター株式会社 半導体メモリ
CN103106925B (zh) * 2013-01-04 2016-07-06 苏州兆芯半导体科技有限公司 串联rom单元及其读取方法
TW201521026A (zh) * 2013-11-18 2015-06-01 Faraday Tech Corp 非揮發性記憶體
JP2016170833A (ja) * 2015-03-12 2016-09-23 株式会社東芝 半導体装置
US9899069B1 (en) * 2016-07-29 2018-02-20 Nxp Usa, Inc. Adaptable sense circuitry and method for read-only memory
US10777255B2 (en) * 2018-03-19 2020-09-15 Samsung Electronics Co., Ltd. Control signal generator for sense amplifier and memory device including the control signal generator

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0836895A (ja) 1994-07-26 1996-02-06 Hitachi Ltd 半導体集積回路装置
JPH09231783A (ja) * 1996-02-26 1997-09-05 Sharp Corp 半導体記憶装置
KR100240418B1 (ko) * 1996-12-31 2000-03-02 윤종용 반도체 독출 전용 메모리 및 그의 독출 방법
JP2004247026A (ja) * 2003-01-24 2004-09-02 Renesas Technology Corp 半導体集積回路及びｉｃカード
JP2005183533A (ja) * 2003-12-17 2005-07-07 Matsushita Electric Ind Co Ltd 半導体記憶装置
JP2006146982A (ja) * 2004-11-16 2006-06-08 Matsushita Electric Ind Co Ltd 半導体記憶装置
JP2007035169A (ja) * 2005-07-27 2007-02-08 Matsushita Electric Ind Co Ltd 半導体記憶装置

Also Published As

Publication number Publication date
US7639559B2 (en) 2009-12-29
JP4805700B2 (ja) 2011-11-02
US20070217246A1 (en) 2007-09-20
JP2007250092A (ja) 2007-09-27

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Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C02 Deemed withdrawal of patent application after publication (patent law 2001)
WD01 Invention patent application deemed withdrawn after publication

Open date: 20070919