JP4805700B2 - 半導体記憶装置 - Google Patents

半導体記憶装置 Download PDF

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Publication number
JP4805700B2
JP4805700B2 JP2006072899A JP2006072899A JP4805700B2 JP 4805700 B2 JP4805700 B2 JP 4805700B2 JP 2006072899 A JP2006072899 A JP 2006072899A JP 2006072899 A JP2006072899 A JP 2006072899A JP 4805700 B2 JP4805700 B2 JP 4805700B2
Authority
JP
Japan
Prior art keywords
bit line
memory cell
cell array
circuit
charging
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2006072899A
Other languages
English (en)
Japanese (ja)
Other versions
JP2007250092A5 (enExample
JP2007250092A (ja
Inventor
勝一 倉田
光昭 林
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Corp
Panasonic Holdings Corp
Original Assignee
Panasonic Corp
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Panasonic Corp, Matsushita Electric Industrial Co Ltd filed Critical Panasonic Corp
Priority to JP2006072899A priority Critical patent/JP4805700B2/ja
Priority to US11/686,892 priority patent/US7639559B2/en
Priority to CNA2007100886135A priority patent/CN101038791A/zh
Publication of JP2007250092A publication Critical patent/JP2007250092A/ja
Publication of JP2007250092A5 publication Critical patent/JP2007250092A5/ja
Application granted granted Critical
Publication of JP4805700B2 publication Critical patent/JP4805700B2/ja
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

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Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/14—Dummy cell management; Sense reference voltage generators
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/24—Bit-line control circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/26—Sensing or reading circuits; Data output circuits
    • G11C16/28—Sensing or reading circuits; Data output circuits using differential sensing or reference cells, e.g. dummy cells
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/12—Bit line control circuits, e.g. drivers, boosters, pull-up circuits, pull-down circuits, precharging circuits, equalising circuits, for bit lines

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  • Read Only Memory (AREA)
JP2006072899A 2006-03-16 2006-03-16 半導体記憶装置 Expired - Fee Related JP4805700B2 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2006072899A JP4805700B2 (ja) 2006-03-16 2006-03-16 半導体記憶装置
US11/686,892 US7639559B2 (en) 2006-03-16 2007-03-15 Semiconductor memory device
CNA2007100886135A CN101038791A (zh) 2006-03-16 2007-03-16 半导体存储装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2006072899A JP4805700B2 (ja) 2006-03-16 2006-03-16 半導体記憶装置

Publications (3)

Publication Number Publication Date
JP2007250092A JP2007250092A (ja) 2007-09-27
JP2007250092A5 JP2007250092A5 (enExample) 2009-03-19
JP4805700B2 true JP4805700B2 (ja) 2011-11-02

Family

ID=38517645

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2006072899A Expired - Fee Related JP4805700B2 (ja) 2006-03-16 2006-03-16 半導体記憶装置

Country Status (3)

Country Link
US (1) US7639559B2 (enExample)
JP (1) JP4805700B2 (enExample)
CN (1) CN101038791A (enExample)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5343916B2 (ja) 2010-04-16 2013-11-13 富士通セミコンダクター株式会社 半導体メモリ
CN103106925B (zh) * 2013-01-04 2016-07-06 苏州兆芯半导体科技有限公司 串联rom单元及其读取方法
TW201521026A (zh) * 2013-11-18 2015-06-01 Faraday Tech Corp 非揮發性記憶體
JP2016170833A (ja) * 2015-03-12 2016-09-23 株式会社東芝 半導体装置
US9899069B1 (en) * 2016-07-29 2018-02-20 Nxp Usa, Inc. Adaptable sense circuitry and method for read-only memory
US10777255B2 (en) * 2018-03-19 2020-09-15 Samsung Electronics Co., Ltd. Control signal generator for sense amplifier and memory device including the control signal generator

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0836895A (ja) 1994-07-26 1996-02-06 Hitachi Ltd 半導体集積回路装置
JPH09231783A (ja) 1996-02-26 1997-09-05 Sharp Corp 半導体記憶装置
KR100240418B1 (ko) 1996-12-31 2000-03-02 윤종용 반도체 독출 전용 메모리 및 그의 독출 방법
JP2004247026A (ja) * 2003-01-24 2004-09-02 Renesas Technology Corp 半導体集積回路及びｉｃカード
JP2005183533A (ja) * 2003-12-17 2005-07-07 Matsushita Electric Ind Co Ltd 半導体記憶装置
JP2006146982A (ja) * 2004-11-16 2006-06-08 Matsushita Electric Ind Co Ltd 半導体記憶装置
JP2007035169A (ja) * 2005-07-27 2007-02-08 Matsushita Electric Ind Co Ltd 半導体記憶装置

Also Published As

Publication number Publication date
CN101038791A (zh) 2007-09-19
JP2007250092A (ja) 2007-09-27
US20070217246A1 (en) 2007-09-20
US7639559B2 (en) 2009-12-29

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