JP2007250092A5 - - Google Patents

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Publication number
JP2007250092A5
JP2007250092A5 JP2006072899A JP2006072899A JP2007250092A5 JP 2007250092 A5 JP2007250092 A5 JP 2007250092A5 JP 2006072899 A JP2006072899 A JP 2006072899A JP 2006072899 A JP2006072899 A JP 2006072899A JP 2007250092 A5 JP2007250092 A5 JP 2007250092A5
Authority
JP
Japan
Prior art keywords
bit line
memory cell
selection circuit
line
cell array
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2006072899A
Other languages
English (en)
Japanese (ja)
Other versions
JP2007250092A (ja
JP4805700B2 (ja
Filing date
Publication date
Application filed filed Critical
Priority to JP2006072899A priority Critical patent/JP4805700B2/ja
Priority claimed from JP2006072899A external-priority patent/JP4805700B2/ja
Priority to US11/686,892 priority patent/US7639559B2/en
Priority to CNA2007100886135A priority patent/CN101038791A/zh
Publication of JP2007250092A publication Critical patent/JP2007250092A/ja
Publication of JP2007250092A5 publication Critical patent/JP2007250092A5/ja
Application granted granted Critical
Publication of JP4805700B2 publication Critical patent/JP4805700B2/ja
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

JP2006072899A 2006-03-16 2006-03-16 半導体記憶装置 Expired - Fee Related JP4805700B2 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2006072899A JP4805700B2 (ja) 2006-03-16 2006-03-16 半導体記憶装置
US11/686,892 US7639559B2 (en) 2006-03-16 2007-03-15 Semiconductor memory device
CNA2007100886135A CN101038791A (zh) 2006-03-16 2007-03-16 半导体存储装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2006072899A JP4805700B2 (ja) 2006-03-16 2006-03-16 半導体記憶装置

Publications (3)

Publication Number Publication Date
JP2007250092A JP2007250092A (ja) 2007-09-27
JP2007250092A5 true JP2007250092A5 (enExample) 2009-03-19
JP4805700B2 JP4805700B2 (ja) 2011-11-02

Family

ID=38517645

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2006072899A Expired - Fee Related JP4805700B2 (ja) 2006-03-16 2006-03-16 半導体記憶装置

Country Status (3)

Country Link
US (1) US7639559B2 (enExample)
JP (1) JP4805700B2 (enExample)
CN (1) CN101038791A (enExample)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5343916B2 (ja) 2010-04-16 2013-11-13 富士通セミコンダクター株式会社 半導体メモリ
CN103106925B (zh) * 2013-01-04 2016-07-06 苏州兆芯半导体科技有限公司 串联rom单元及其读取方法
TW201521026A (zh) * 2013-11-18 2015-06-01 Faraday Tech Corp 非揮發性記憶體
JP2016170833A (ja) * 2015-03-12 2016-09-23 株式会社東芝 半導体装置
US9899069B1 (en) * 2016-07-29 2018-02-20 Nxp Usa, Inc. Adaptable sense circuitry and method for read-only memory
US10777255B2 (en) * 2018-03-19 2020-09-15 Samsung Electronics Co., Ltd. Control signal generator for sense amplifier and memory device including the control signal generator

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0836895A (ja) 1994-07-26 1996-02-06 Hitachi Ltd 半導体集積回路装置
JPH09231783A (ja) 1996-02-26 1997-09-05 Sharp Corp 半導体記憶装置
KR100240418B1 (ko) 1996-12-31 2000-03-02 윤종용 반도체 독출 전용 메모리 및 그의 독출 방법
JP2004247026A (ja) * 2003-01-24 2004-09-02 Renesas Technology Corp 半導体集積回路及びｉｃカード
JP2005183533A (ja) * 2003-12-17 2005-07-07 Matsushita Electric Ind Co Ltd 半導体記憶装置
JP2006146982A (ja) * 2004-11-16 2006-06-08 Matsushita Electric Ind Co Ltd 半導体記憶装置
JP2007035169A (ja) * 2005-07-27 2007-02-08 Matsushita Electric Ind Co Ltd 半導体記憶装置

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