CN100576587C - 用于led的结构化衬底 - Google Patents

用于led的结构化衬底 Download PDF

Info

Publication number
CN100576587C
CN100576587C CN200680012144A CN200680012144A CN100576587C CN 100576587 C CN100576587 C CN 100576587C CN 200680012144 A CN200680012144 A CN 200680012144A CN 200680012144 A CN200680012144 A CN 200680012144A CN 100576587 C CN100576587 C CN 100576587C
Authority
CN
China
Prior art keywords
substrate
light
surface roughness
region
manufacturing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CN200680012144A
Other languages
English (en)
Chinese (zh)
Other versions
CN101160671A (zh
Inventor
H·-H·贝克特尔
W·巴塞尔特
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Koninklijke Philips NV
Original Assignee
Koninklijke Philips Electronics NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Koninklijke Philips Electronics NV filed Critical Koninklijke Philips Electronics NV
Publication of CN101160671A publication Critical patent/CN101160671A/zh
Application granted granted Critical
Publication of CN100576587C publication Critical patent/CN100576587C/zh
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B33/00—Electroluminescent light sources
    • H05B33/02—Details
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/819—Bodies characterised by their shape, e.g. curved or truncated substrates
    • H10H20/82—Roughened surfaces, e.g. at the interface between epitaxial layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/855—Optical field-shaping means, e.g. lenses
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/85—Arrangements for extracting light from the devices
    • H10K50/854—Arrangements for extracting light from the devices comprising scattering means

Landscapes

  • Electroluminescent Light Sources (AREA)
  • Laminated Bodies (AREA)
CN200680012144A 2005-04-13 2006-04-06 用于led的结构化衬底 Expired - Fee Related CN100576587C (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
EP05102912.2 2005-04-13
EP05102912 2005-04-13

Publications (2)

Publication Number Publication Date
CN101160671A CN101160671A (zh) 2008-04-09
CN100576587C true CN100576587C (zh) 2009-12-30

Family

ID=36589236

Family Applications (1)

Application Number Title Priority Date Filing Date
CN200680012144A Expired - Fee Related CN100576587C (zh) 2005-04-13 2006-04-06 用于led的结构化衬底

Country Status (7)

Country Link
US (1) US7943950B2 (enExample)
EP (1) EP1875520A1 (enExample)
JP (1) JP5216576B2 (enExample)
KR (1) KR101249233B1 (enExample)
CN (1) CN100576587C (enExample)
TW (1) TW200642126A (enExample)
WO (1) WO2006109222A1 (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104350628A (zh) * 2012-05-29 2015-02-11 旭硝子欧洲玻璃公司 用于光电子器件的具有改善的光学性能的肌理化玻璃基材

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2010002221A2 (ko) * 2008-07-03 2010-01-07 삼성엘이디 주식회사 파장변환형 발광다이오드 칩 및 이를 구비한 발광장치
CN101651173B (zh) * 2008-08-12 2011-04-27 昆山中辰硅晶有限公司 半导体发光元件
KR101363022B1 (ko) * 2008-12-23 2014-02-14 삼성디스플레이 주식회사 유기 발광 표시 장치
TW201214802A (en) * 2010-09-27 2012-04-01 Nat Univ Chung Hsing Patterned substrate and LED formed using the same
US10308545B2 (en) 2010-10-26 2019-06-04 Schott Ag Highly refractive thin glasses
DE102010042945A1 (de) * 2010-10-26 2012-04-26 Schott Ag Transparente Schichtverbunde
US10343946B2 (en) 2010-10-26 2019-07-09 Schott Ag Highly refractive thin glasses
TWI464910B (zh) * 2011-05-23 2014-12-11 Lextar Electronics Corp 半導體發光結構
JP2013084466A (ja) * 2011-10-11 2013-05-09 Konica Minolta Holdings Inc 面状発光体
WO2013084442A1 (ja) 2011-12-07 2013-06-13 パナソニック株式会社 シート及び発光装置
CN103199165A (zh) * 2012-01-05 2013-07-10 昆山中辰矽晶有限公司 发光二极管基板及其加工方法与发光二级管
KR101421026B1 (ko) * 2012-06-12 2014-07-22 코닝정밀소재 주식회사 유기발광소자용 광추출층 기판 및 그 제조방법
US9257676B2 (en) * 2012-12-18 2016-02-09 Pioneer Corporation Light-emitting device
US9548419B2 (en) 2014-05-20 2017-01-17 Southern Taiwan University Of Science And Technology Light emitting diode chip having multi microstructure substrate surface
CN117460347A (zh) * 2023-09-08 2024-01-26 武汉华星光电技术有限公司 显示面板

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2001024280A1 (de) * 1999-09-30 2001-04-05 Osram Opto Semiconductors Gmbh & Co. Ohg Oberflächenstrukturierte lichtemissionsdiode mit verbesserter stromeinkopplung
EP1263058A2 (en) * 2001-05-29 2002-12-04 Toyoda Gosei Co., Ltd. Light-emitting element
CN1404629A (zh) * 2000-02-15 2003-03-19 奥斯兰姆奥普托半导体有限责任公司 发射辐射半导体器件及其制造方法
WO2004017430A1 (de) * 2002-07-31 2004-02-26 Osram Opto Semiconductors Gmbh Strahlungsemittierendes dünnschicht-halbleiterbauelement auf gan-basis

Family Cites Families (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH09311206A (ja) * 1996-05-23 1997-12-02 Kimoto & Co Ltd 光線制御シート及びその製造方法
JPH1093136A (ja) 1996-09-11 1998-04-10 Sanken Electric Co Ltd 半導体発光素子
JPH10246805A (ja) * 1997-03-06 1998-09-14 Dainippon Printing Co Ltd 拡散光制御用光学シート、バックライト装置及び液晶表示装置
JPH118063A (ja) 1997-06-12 1999-01-12 Minnesota Mining & Mfg Co <3M> エレクトロルミネッセンス素子およびその製造方法
ITTO980580A1 (it) 1998-07-02 2000-01-02 C R F Societa Consotile Per Az Dispositivo emettitore di luce, a base di materiale organico elettro- luminescente, con interfaccia esterna conformata
JP2001051198A (ja) * 1999-08-06 2001-02-23 Olympus Optical Co Ltd 回転非対称光学面を有する光学素子およびその金型装置
JP4597390B2 (ja) * 2001-01-19 2010-12-15 シャープ株式会社 光学シート、照明装置及び液晶表示装置
US6703780B2 (en) 2001-01-16 2004-03-09 General Electric Company Organic electroluminescent device with a ceramic output coupler and method of making the same
JP2002352956A (ja) * 2001-03-23 2002-12-06 Mitsubishi Chemicals Corp 薄膜型発光体及びその製造方法
JP3942879B2 (ja) * 2001-11-30 2007-07-11 シャープ株式会社 光学シートの製造方法
TW522751B (en) 2001-12-31 2003-03-01 Ritdisplay Corp Organic flat light emitting device
JP2004296215A (ja) 2003-03-26 2004-10-21 Toyota Industries Corp 面状光源用の透明基板、透明基板の製造方法、面状光源及び液晶表示装置
JP4136799B2 (ja) * 2002-07-24 2008-08-20 富士フイルム株式会社 Ｅｌ表示素子の形成方法
CN100462739C (zh) 2002-08-13 2009-02-18 日本瑞翁株式会社 透镜阵列板
JP2004233957A (ja) * 2002-12-05 2004-08-19 Toyota Industries Corp 光学素子、面状照明装置及び液晶表示装置
JP2004241214A (ja) * 2003-02-05 2004-08-26 Stanley Electric Co Ltd Ｅｌ素子
JP2004342513A (ja) * 2003-05-16 2004-12-02 Toyota Industries Corp 自発光デバイス
JP2004342523A (ja) * 2003-05-16 2004-12-02 Toyota Industries Corp 自発光デバイス
JP2004363049A (ja) * 2003-06-06 2004-12-24 Seiko Epson Corp 有機エレクトロルミネッセンス表示装置の製造方法及び、有機エレクトロルミネッセンス表示装置並びに、有機エレクトロルミネッセンス表示装置を備える表示装置
WO2005018008A1 (ja) * 2003-08-19 2005-02-24 Nichia Corporation 半導体素子

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2001024280A1 (de) * 1999-09-30 2001-04-05 Osram Opto Semiconductors Gmbh & Co. Ohg Oberflächenstrukturierte lichtemissionsdiode mit verbesserter stromeinkopplung
CN1404629A (zh) * 2000-02-15 2003-03-19 奥斯兰姆奥普托半导体有限责任公司 发射辐射半导体器件及其制造方法
EP1263058A2 (en) * 2001-05-29 2002-12-04 Toyoda Gosei Co., Ltd. Light-emitting element
WO2004017430A1 (de) * 2002-07-31 2004-02-26 Osram Opto Semiconductors Gmbh Strahlungsemittierendes dünnschicht-halbleiterbauelement auf gan-basis

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104350628A (zh) * 2012-05-29 2015-02-11 旭硝子欧洲玻璃公司 用于光电子器件的具有改善的光学性能的肌理化玻璃基材

Also Published As

Publication number Publication date
KR20080012871A (ko) 2008-02-12
JP5216576B2 (ja) 2013-06-19
WO2006109222A1 (en) 2006-10-19
JP2008537291A (ja) 2008-09-11
TW200642126A (en) 2006-12-01
KR101249233B1 (ko) 2013-04-01
CN101160671A (zh) 2008-04-09
US20080203421A1 (en) 2008-08-28
US7943950B2 (en) 2011-05-17
EP1875520A1 (en) 2008-01-09

Similar Documents

Publication Publication Date Title
CN100576587C (zh) 用于led的结构化衬底
TWI692127B (zh) 發光元件及其製作方法
US9142720B2 (en) Thin-film light emitting diode chip and method for producing a thin-film light emitting diode chip
KR101899484B1 (ko) 분포 브래그 반사기를 갖는 발광 다이오드 칩 및 그 제조방법
TWI581458B (zh) 發光元件
US8987767B2 (en) Light emitting device having improved light extraction efficiency
KR20090081377A (ko) 반도체칩 및 반도체칩의 제조 방법
US20130207139A1 (en) Radiation-emitting component and method for producing radiation-emitting components
US20080197764A1 (en) Electroluminescence Light Source
JP5855344B2 (ja) 分布ブラッグ反射器を有する発光ダイオードチップ及びその製造方法
US6858881B2 (en) Radiation-emitting semiconductor chip, and method for producing the semiconductor chip
EP0969699B1 (en) Light-emitting device based on an electroluminescent organic material, having a shaped outer interface
TWI657592B (zh) 氮化物半導體紫外線發光元件之製造方法及氮化物半導體紫外線發光元件
KR20130025339A (ko) 발광 장치 및 그 제조 방법
US8113903B2 (en) Fabrication method of light-emitting device
JP2008181910A (ja) ＧａＮ系発光ダイオード素子の製造方法
KR20140074446A (ko) 광추출 효율이 향상된 발광 소자 및 그 제조 방법
KR101715844B1 (ko) 기공을 포함한 광추출층
CN113594318A (zh) 高亮度发光二极管芯片及其制造方法
US11690249B2 (en) Light extraction substrate of organic light-emitting device and method of fabricating the same
JP7174269B2 (ja) 発光モジュール
WO2009107661A1 (ja) 発光体及びこれを用いた半導体発光装置
JP2016076301A (ja) 発光素子基材および製造方法
WO2014003169A1 (ja) 光半導体素子およびその製造方法
WO2014196054A1 (ja) 光拡散フィルム、発光素子、光拡散フィルムの製造方法および発光素子の製造方法

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C14 Grant of patent or utility model
GR01 Patent grant
C17 Cessation of patent right
CF01 Termination of patent right due to non-payment of annual fee

Granted publication date: 20091230

Termination date: 20140406