TW200642126A - Electroluminescent light source - Google Patents

Electroluminescent light source

Info

Publication number
TW200642126A
TW200642126A TW095112654A TW95112654A TW200642126A TW 200642126 A TW200642126 A TW 200642126A TW 095112654 A TW095112654 A TW 095112654A TW 95112654 A TW95112654 A TW 95112654A TW 200642126 A TW200642126 A TW 200642126A
Authority
TW
Taiwan
Prior art keywords
light source
electroluminescent light
substrate
light
electroluminescent
Prior art date
Application number
TW095112654A
Other languages
English (en)
Chinese (zh)
Inventor
Hans-Helmut Bechtel
Wolfgang Busselt
Original Assignee
Koninkl Philips Electronics Nv
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Koninkl Philips Electronics Nv filed Critical Koninkl Philips Electronics Nv
Publication of TW200642126A publication Critical patent/TW200642126A/zh

Links

Classifications

    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B33/00—Electroluminescent light sources
    • H05B33/02—Details
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/819—Bodies characterised by their shape, e.g. curved or truncated substrates
    • H10H20/82—Roughened surfaces, e.g. at the interface between epitaxial layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/855—Optical field-shaping means, e.g. lenses
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/85—Arrangements for extracting light from the devices
    • H10K50/854—Arrangements for extracting light from the devices comprising scattering means

Landscapes

  • Electroluminescent Light Sources (AREA)
  • Laminated Bodies (AREA)
TW095112654A 2005-04-13 2006-04-10 Electroluminescent light source TW200642126A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
EP05102912 2005-04-13

Publications (1)

Publication Number Publication Date
TW200642126A true TW200642126A (en) 2006-12-01

Family

ID=36589236

Family Applications (1)

Application Number Title Priority Date Filing Date
TW095112654A TW200642126A (en) 2005-04-13 2006-04-10 Electroluminescent light source

Country Status (7)

Country Link
US (1) US7943950B2 (enExample)
EP (1) EP1875520A1 (enExample)
JP (1) JP5216576B2 (enExample)
KR (1) KR101249233B1 (enExample)
CN (1) CN100576587C (enExample)
TW (1) TW200642126A (enExample)
WO (1) WO2006109222A1 (enExample)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2010002221A2 (ko) * 2008-07-03 2010-01-07 삼성엘이디 주식회사 파장변환형 발광다이오드 칩 및 이를 구비한 발광장치
CN101651173B (zh) * 2008-08-12 2011-04-27 昆山中辰硅晶有限公司 半导体发光元件
KR101363022B1 (ko) * 2008-12-23 2014-02-14 삼성디스플레이 주식회사 유기 발광 표시 장치
TW201214802A (en) * 2010-09-27 2012-04-01 Nat Univ Chung Hsing Patterned substrate and LED formed using the same
US10308545B2 (en) 2010-10-26 2019-06-04 Schott Ag Highly refractive thin glasses
DE102010042945A1 (de) * 2010-10-26 2012-04-26 Schott Ag Transparente Schichtverbunde
US10343946B2 (en) 2010-10-26 2019-07-09 Schott Ag Highly refractive thin glasses
TWI464910B (zh) * 2011-05-23 2014-12-11 Lextar Electronics Corp 半導體發光結構
JP2013084466A (ja) * 2011-10-11 2013-05-09 Konica Minolta Holdings Inc 面状発光体
WO2013084442A1 (ja) 2011-12-07 2013-06-13 パナソニック株式会社 シート及び発光装置
CN103199165A (zh) * 2012-01-05 2013-07-10 昆山中辰矽晶有限公司 发光二极管基板及其加工方法与发光二级管
BE1020735A3 (fr) * 2012-05-29 2014-04-01 Agc Glass Europe Substrat verrier texture a proprietes optiques ameliorees pour dispositif optoelectronique.
KR101421026B1 (ko) * 2012-06-12 2014-07-22 코닝정밀소재 주식회사 유기발광소자용 광추출층 기판 및 그 제조방법
US9257676B2 (en) * 2012-12-18 2016-02-09 Pioneer Corporation Light-emitting device
US9548419B2 (en) 2014-05-20 2017-01-17 Southern Taiwan University Of Science And Technology Light emitting diode chip having multi microstructure substrate surface
CN117460347A (zh) * 2023-09-08 2024-01-26 武汉华星光电技术有限公司 显示面板

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JPH09311206A (ja) * 1996-05-23 1997-12-02 Kimoto & Co Ltd 光線制御シート及びその製造方法
JPH1093136A (ja) 1996-09-11 1998-04-10 Sanken Electric Co Ltd 半導体発光素子
JPH10246805A (ja) * 1997-03-06 1998-09-14 Dainippon Printing Co Ltd 拡散光制御用光学シート、バックライト装置及び液晶表示装置
JPH118063A (ja) 1997-06-12 1999-01-12 Minnesota Mining & Mfg Co <3M> エレクトロルミネッセンス素子およびその製造方法
ITTO980580A1 (it) 1998-07-02 2000-01-02 C R F Societa Consotile Per Az Dispositivo emettitore di luce, a base di materiale organico elettro- luminescente, con interfaccia esterna conformata
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US6703780B2 (en) 2001-01-16 2004-03-09 General Electric Company Organic electroluminescent device with a ceramic output coupler and method of making the same
JP2002352956A (ja) * 2001-03-23 2002-12-06 Mitsubishi Chemicals Corp 薄膜型発光体及びその製造方法
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JP3942879B2 (ja) * 2001-11-30 2007-07-11 シャープ株式会社 光学シートの製造方法
TW522751B (en) 2001-12-31 2003-03-01 Ritdisplay Corp Organic flat light emitting device
JP2004296215A (ja) 2003-03-26 2004-10-21 Toyota Industries Corp 面状光源用の透明基板、透明基板の製造方法、面状光源及び液晶表示装置
JP4136799B2 (ja) * 2002-07-24 2008-08-20 富士フイルム株式会社 Ｅｌ表示素子の形成方法
DE10234977A1 (de) * 2002-07-31 2004-02-12 Osram Opto Semiconductors Gmbh Strahlungsemittierendes Dünnschicht-Halbleiterbauelement auf GaN-Basis
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JP2004233957A (ja) * 2002-12-05 2004-08-19 Toyota Industries Corp 光学素子、面状照明装置及び液晶表示装置
JP2004241214A (ja) * 2003-02-05 2004-08-26 Stanley Electric Co Ltd Ｅｌ素子
JP2004342513A (ja) * 2003-05-16 2004-12-02 Toyota Industries Corp 自発光デバイス
JP2004342523A (ja) * 2003-05-16 2004-12-02 Toyota Industries Corp 自発光デバイス
JP2004363049A (ja) * 2003-06-06 2004-12-24 Seiko Epson Corp 有機エレクトロルミネッセンス表示装置の製造方法及び、有機エレクトロルミネッセンス表示装置並びに、有機エレクトロルミネッセンス表示装置を備える表示装置
WO2005018008A1 (ja) * 2003-08-19 2005-02-24 Nichia Corporation 半導体素子

Also Published As

Publication number Publication date
KR20080012871A (ko) 2008-02-12
JP5216576B2 (ja) 2013-06-19
WO2006109222A1 (en) 2006-10-19
JP2008537291A (ja) 2008-09-11
KR101249233B1 (ko) 2013-04-01
CN101160671A (zh) 2008-04-09
US20080203421A1 (en) 2008-08-28
US7943950B2 (en) 2011-05-17
CN100576587C (zh) 2009-12-30
EP1875520A1 (en) 2008-01-09

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