CN100573871C - 半导体器件及其制造方法 - Google Patents

半导体器件及其制造方法 Download PDF

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Publication number
CN100573871C
CN100573871C CNB2006100957511A CN200610095751A CN100573871C CN 100573871 C CN100573871 C CN 100573871C CN B2006100957511 A CNB2006100957511 A CN B2006100957511A CN 200610095751 A CN200610095751 A CN 200610095751A CN 100573871 C CN100573871 C CN 100573871C
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CN
China
Prior art keywords
film
insulating film
wiring
interlayer insulating
semiconductor device
Prior art date
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CNB2006100957511A
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English (en)
Chinese (zh)
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CN1893076A (zh
Inventor
堀田胜彦
屉原乡子
早水太一
河野祐一
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Renesas Electronics Corp
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Renesas Technology Corp
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Publication of CN1893076A publication Critical patent/CN1893076A/zh
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/071—Manufacture or treatment of dielectric parts thereof
    • H10W20/074—Manufacture or treatment of dielectric parts thereof of dielectric parts comprising thin functional dielectric layers, e.g. dielectric etch-stop, barrier, capping or liner layers
    • H10W20/075—Manufacture or treatment of dielectric parts thereof of dielectric parts comprising thin functional dielectric layers, e.g. dielectric etch-stop, barrier, capping or liner layers of multilayered thin functional dielectric layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/071—Manufacture or treatment of dielectric parts thereof
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/071—Manufacture or treatment of dielectric parts thereof
    • H10W20/074—Manufacture or treatment of dielectric parts thereof of dielectric parts comprising thin functional dielectric layers, e.g. dielectric etch-stop, barrier, capping or liner layers
    • H10W20/077—Manufacture or treatment of dielectric parts thereof of dielectric parts comprising thin functional dielectric layers, e.g. dielectric etch-stop, barrier, capping or liner layers on sidewalls or on top surfaces of conductors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/071—Manufacture or treatment of dielectric parts thereof
    • H10W20/081—Manufacture or treatment of dielectric parts thereof by forming openings in the dielectric parts
    • H10W20/084—Manufacture or treatment of dielectric parts thereof by forming openings in the dielectric parts for dual-damascene structures
    • H10W20/085—Manufacture or treatment of dielectric parts thereof by forming openings in the dielectric parts for dual-damascene structures involving intermediate temporary filling with material
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H10W20/41—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes characterised by their conductive parts
    • H10W20/425—Barrier, adhesion or liner layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H10W20/45—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes characterised by their insulating parts
    • H10W20/47—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes characterised by their insulating parts comprising two or more dielectric layers having different properties, e.g. different dielectric constants
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H10W20/49—Adaptable interconnections, e.g. fuses or antifuses
    • H10W20/493—Fuses, i.e. interconnections changeable from conductive to non-conductive
    • H10W20/494—Fuses, i.e. interconnections changeable from conductive to non-conductive changeable by the use of an external beam, e.g. laser beam or ion beam
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B99/00—Subject matter not provided for in other groups of this subclass
    • H10B99/10—Memory cells having a cross-point geometry
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/20—Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps

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  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Design And Manufacture Of Integrated Circuits (AREA)
CNB2006100957511A 2005-07-06 2006-07-04 半导体器件及其制造方法 Active CN100573871C (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP197939/2005 2005-07-06
JP2005197939A JP2007019188A (ja) 2005-07-06 2005-07-06 半導体集積回路装置およびその製造方法

Publications (2)

Publication Number Publication Date
CN1893076A CN1893076A (zh) 2007-01-10
CN100573871C true CN100573871C (zh) 2009-12-23

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
CNB2006100957511A Active CN100573871C (zh) 2005-07-06 2006-07-04 半导体器件及其制造方法

Country Status (4)

Country Link
US (5) US7419901B2 (https=)
JP (1) JP2007019188A (https=)
CN (1) CN100573871C (https=)
TW (1) TW200707646A (https=)

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JP2007019188A (ja) * 2005-07-06 2007-01-25 Renesas Technology Corp 半導体集積回路装置およびその製造方法
US7586132B2 (en) * 2007-06-06 2009-09-08 Micrel, Inc. Power FET with low on-resistance using merged metal layers
US8772156B2 (en) * 2008-05-09 2014-07-08 International Business Machines Corporation Methods of fabricating interconnect structures containing various capping materials for electrical fuse and other related applications
US7956466B2 (en) 2008-05-09 2011-06-07 International Business Machines Corporation Structure for interconnect structure containing various capping materials for electrical fuse and other related applications
US7893520B2 (en) * 2008-05-12 2011-02-22 International Business Machines Corporation Efficient interconnect structure for electrical fuse applications
KR101198758B1 (ko) * 2009-11-25 2012-11-12 엘지이노텍 주식회사 수직구조 반도체 발광소자 및 그 제조방법
US8530320B2 (en) * 2011-06-08 2013-09-10 International Business Machines Corporation High-nitrogen content metal resistor and method of forming same
TWI555122B (zh) * 2012-05-11 2016-10-21 聯華電子股份有限公司 半導體元件之內連線結構其製備方法
US20130299993A1 (en) * 2012-05-11 2013-11-14 Hsin-Yu Chen Interconnection of semiconductor device and fabrication method thereof
US9087841B2 (en) * 2013-10-29 2015-07-21 International Business Machines Corporation Self-correcting power grid for semiconductor structures method
JP6448424B2 (ja) * 2015-03-17 2019-01-09 ルネサスエレクトロニクス株式会社 半導体装置およびその製造方法
US9455261B1 (en) * 2015-07-10 2016-09-27 Micron Technology, Inc. Integrated structures
TWI590350B (zh) * 2016-06-30 2017-07-01 欣興電子股份有限公司 線路重分佈結構的製造方法與線路重分佈結構單元
KR102616489B1 (ko) 2016-10-11 2023-12-20 삼성전자주식회사 반도체 장치 제조 방법
US20190169841A1 (en) * 2017-12-02 2019-06-06 M-Fire Suppression, Inc. Wild-fire protected shed for storage and protection of personal property during wild-fires
US20190169837A1 (en) * 2017-12-02 2019-06-06 M-Fire Suppression, Inc. Wild-fire protected shed for storage and protection of personal property during wild-fires
JP7055109B2 (ja) * 2019-01-17 2022-04-15 三菱電機株式会社 半導体装置
CN110047799A (zh) * 2019-04-28 2019-07-23 上海华虹宏力半导体制造有限公司 半导体器件的制造方法及半导体器件

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US6291891B1 (en) * 1998-01-13 2001-09-18 Kabushiki Kaisha Toshiba Semiconductor device manufacturing method and semiconductor device
US6111301A (en) * 1998-04-24 2000-08-29 International Business Machines Corporation Interconnection with integrated corrosion stop
JP2001085526A (ja) * 1999-09-10 2001-03-30 Hitachi Ltd 半導体装置の製造方法および半導体装置
JP3670552B2 (ja) * 2000-03-27 2005-07-13 株式会社東芝 半導体装置及びその製造方法
US6440833B1 (en) * 2000-07-19 2002-08-27 Taiwan Semiconductor Manufacturing Company Method of protecting a copper pad structure during a fuse opening procedure
JP2002164428A (ja) * 2000-11-29 2002-06-07 Hitachi Ltd 半導体装置およびその製造方法
JP4523194B2 (ja) * 2001-04-13 2010-08-11 富士通セミコンダクター株式会社 半導体装置とその製造方法
JP2003017570A (ja) * 2001-07-02 2003-01-17 Fujitsu Ltd 半導体装置及びその製造方法
JP2003124307A (ja) 2001-10-15 2003-04-25 Matsushita Electric Ind Co Ltd 半導体装置及びその製造方法
JP2003142485A (ja) * 2001-11-01 2003-05-16 Mitsubishi Electric Corp 半導体装置及びその製造方法
US7067897B2 (en) * 2002-02-19 2006-06-27 Kabushiki Kaisha Toshiba Semiconductor device
JP3588612B2 (ja) 2002-02-19 2004-11-17 株式会社東芝 半導体装置
US7042095B2 (en) * 2002-03-29 2006-05-09 Renesas Technology Corp. Semiconductor device including an interconnect having copper as a main component
JP4250006B2 (ja) * 2002-06-06 2009-04-08 富士通マイクロエレクトロニクス株式会社 半導体装置及びその製造方法
JP3779243B2 (ja) * 2002-07-31 2006-05-24 富士通株式会社 半導体装置及びその製造方法
JP3898133B2 (ja) * 2003-01-14 2007-03-28 Ｎｅｃエレクトロニクス株式会社 ＳｉＣＨＮ膜の成膜方法。
US7094683B2 (en) * 2003-08-04 2006-08-22 Taiwan Semiconductor Manufacturing Co., Ltd. Dual damascene method for ultra low K dielectrics
US7018917B2 (en) * 2003-11-20 2006-03-28 Asm International N.V. Multilayer metallization
JP4673557B2 (ja) * 2004-01-19 2011-04-20 ルネサスエレクトロニクス株式会社 半導体装置およびその製造方法
JP2007019188A (ja) * 2005-07-06 2007-01-25 Renesas Technology Corp 半導体集積回路装置およびその製造方法

Also Published As

Publication number Publication date
US7968966B2 (en) 2011-06-28
TWI380404B (https=) 2012-12-21
US8686538B2 (en) 2014-04-01
CN1893076A (zh) 2007-01-10
US20110169128A1 (en) 2011-07-14
US8269309B2 (en) 2012-09-18
US20120319235A1 (en) 2012-12-20
US20080211103A1 (en) 2008-09-04
TW200707646A (en) 2007-02-16
US20070026664A1 (en) 2007-02-01
US20100013046A1 (en) 2010-01-21
US7419901B2 (en) 2008-09-02
JP2007019188A (ja) 2007-01-25
US7602040B2 (en) 2009-10-13

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