TW200707646A - Semiconductor device and a method of manufacturing the same - Google Patents

Semiconductor device and a method of manufacturing the same

Info

Publication number
TW200707646A
TW200707646A TW095122398A TW95122398A TW200707646A TW 200707646 A TW200707646 A TW 200707646A TW 095122398 A TW095122398 A TW 095122398A TW 95122398 A TW95122398 A TW 95122398A TW 200707646 A TW200707646 A TW 200707646A
Authority
TW
Taiwan
Prior art keywords
insulating film
fuse
barrier insulating
semiconductor device
manufacturing
Prior art date
Application number
TW095122398A
Other languages
Chinese (zh)
Other versions
TWI380404B (en
Inventor
Katsuhiko Hotta
Satoko Sasahara
Taichi Hayamizu
Yuichi Kono
Original Assignee
Renesas Tech Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Renesas Tech Corp filed Critical Renesas Tech Corp
Publication of TW200707646A publication Critical patent/TW200707646A/en
Application granted granted Critical
Publication of TWI380404B publication Critical patent/TWI380404B/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
    • H01L21/76829—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing characterised by the formation of thin functional dielectric layers, e.g. dielectric etch-stop, barrier, capping or liner layers
    • H01L21/76832—Multiple layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
    • H01L21/76802—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics
    • H01L21/76807—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics for dual damascene structures
    • H01L21/76808—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics for dual damascene structures involving intermediate temporary filling with material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
    • H01L21/76829—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing characterised by the formation of thin functional dielectric layers, e.g. dielectric etch-stop, barrier, capping or liner layers
    • H01L21/76834—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing characterised by the formation of thin functional dielectric layers, e.g. dielectric etch-stop, barrier, capping or liner layers formation of thin insulating films on the sidewalls or on top of conductors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/525—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body with adaptable interconnections
    • H01L23/5256—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body with adaptable interconnections comprising fuses, i.e. connections having their state changed from conductive to non-conductive
    • H01L23/5258—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body with adaptable interconnections comprising fuses, i.e. connections having their state changed from conductive to non-conductive the change of state resulting from the use of an external beam, e.g. laser beam or ion beam
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/532—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
    • H01L23/53204—Conductive materials
    • H01L23/53209—Conductive materials based on metals, e.g. alloys, metal silicides
    • H01L23/53228—Conductive materials based on metals, e.g. alloys, metal silicides the principal metal being copper
    • H01L23/53238—Additional layers associated with copper layers, e.g. adhesion, barrier, cladding layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/532—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
    • H01L23/5329—Insulating materials
    • H01L23/53295—Stacked insulating layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
    • H01L27/10—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration

Abstract

In order to improve the reliability of a semiconductor device having a fuse formed by a Damascene technique, a barrier insulating film and an inter-layer insulating film are deposited over a fourth-layer wiring and a fuse. The barrier insulating film is an insulating film for preventing the diffusion of Cu and composed of a SiCN film deposited by plasma CVD like the underlying barrier insulating film. The thickness of the barrier insulating film covering the fuse is larger than the thickness of the underlying barrier insulating film so as to improve the moisture resistance of the fuse.
TW095122398A 2005-07-06 2006-06-22 Semiconductor device and a method of manufacturing the same TW200707646A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2005197939A JP2007019188A (en) 2005-07-06 2005-07-06 Semiconductor integrated circuit device and its manufacturing method

Publications (2)

Publication Number Publication Date
TW200707646A true TW200707646A (en) 2007-02-16
TWI380404B TWI380404B (en) 2012-12-21

Family

ID=37597735

Family Applications (1)

Application Number Title Priority Date Filing Date
TW095122398A TW200707646A (en) 2005-07-06 2006-06-22 Semiconductor device and a method of manufacturing the same

Country Status (4)

Country Link
US (5) US7419901B2 (en)
JP (1) JP2007019188A (en)
CN (1) CN100573871C (en)
TW (1) TW200707646A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI555122B (en) * 2012-05-11 2016-10-21 聯華電子股份有限公司 Interconnection of semiconductor device and fabrication method thereof

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JP2007019188A (en) * 2005-07-06 2007-01-25 Renesas Technology Corp Semiconductor integrated circuit device and its manufacturing method
US7586132B2 (en) * 2007-06-06 2009-09-08 Micrel, Inc. Power FET with low on-resistance using merged metal layers
US7956466B2 (en) 2008-05-09 2011-06-07 International Business Machines Corporation Structure for interconnect structure containing various capping materials for electrical fuse and other related applications
US8772156B2 (en) * 2008-05-09 2014-07-08 International Business Machines Corporation Methods of fabricating interconnect structures containing various capping materials for electrical fuse and other related applications
US7893520B2 (en) * 2008-05-12 2011-02-22 International Business Machines Corporation Efficient interconnect structure for electrical fuse applications
KR101198758B1 (en) * 2009-11-25 2012-11-12 엘지이노텍 주식회사 Vertical structured semiconductor light emitting device and method for producing thereof
US8530320B2 (en) * 2011-06-08 2013-09-10 International Business Machines Corporation High-nitrogen content metal resistor and method of forming same
US20130299993A1 (en) * 2012-05-11 2013-11-14 Hsin-Yu Chen Interconnection of semiconductor device and fabrication method thereof
US9087841B2 (en) * 2013-10-29 2015-07-21 International Business Machines Corporation Self-correcting power grid for semiconductor structures method
JP6448424B2 (en) * 2015-03-17 2019-01-09 ルネサスエレクトロニクス株式会社 Semiconductor device and manufacturing method thereof
US9455261B1 (en) 2015-07-10 2016-09-27 Micron Technology, Inc. Integrated structures
TWI590350B (en) * 2016-06-30 2017-07-01 欣興電子股份有限公司 Method for manufacturing circuit redistribution structure and circuit redistribution structure unit
KR102616489B1 (en) 2016-10-11 2023-12-20 삼성전자주식회사 Method for fabricating semiconductor device
US20190169837A1 (en) * 2017-12-02 2019-06-06 M-Fire Suppression, Inc. Wild-fire protected shed for storage and protection of personal property during wild-fires
US20190169841A1 (en) * 2017-12-02 2019-06-06 M-Fire Suppression, Inc. Wild-fire protected shed for storage and protection of personal property during wild-fires
JP7055109B2 (en) * 2019-01-17 2022-04-15 三菱電機株式会社 Semiconductor device
CN110047799A (en) * 2019-04-28 2019-07-23 上海华虹宏力半导体制造有限公司 The manufacturing method and semiconductor devices of semiconductor devices

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US6291891B1 (en) * 1998-01-13 2001-09-18 Kabushiki Kaisha Toshiba Semiconductor device manufacturing method and semiconductor device
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Also Published As

Publication number Publication date
CN100573871C (en) 2009-12-23
US7419901B2 (en) 2008-09-02
US20100013046A1 (en) 2010-01-21
US8269309B2 (en) 2012-09-18
CN1893076A (en) 2007-01-10
US7968966B2 (en) 2011-06-28
TWI380404B (en) 2012-12-21
US20110169128A1 (en) 2011-07-14
US20120319235A1 (en) 2012-12-20
US8686538B2 (en) 2014-04-01
JP2007019188A (en) 2007-01-25
US20070026664A1 (en) 2007-02-01
US20080211103A1 (en) 2008-09-04
US7602040B2 (en) 2009-10-13

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