CN100565882C - 半导体器件制造方法 - Google Patents
半导体器件制造方法 Download PDFInfo
- Publication number
- CN100565882C CN100565882C CNB018004350A CN01800435A CN100565882C CN 100565882 C CN100565882 C CN 100565882C CN B018004350 A CNB018004350 A CN B018004350A CN 01800435 A CN01800435 A CN 01800435A CN 100565882 C CN100565882 C CN 100565882C
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 74
- 238000000034 method Methods 0.000 title claims description 46
- 238000004519 manufacturing process Methods 0.000 title claims description 10
- 238000009413 insulation Methods 0.000 claims abstract description 13
- 238000003860 storage Methods 0.000 claims abstract description 9
- 230000015572 biosynthetic process Effects 0.000 claims abstract description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 40
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 28
- 229920005591 polysilicon Polymers 0.000 claims description 28
- 230000004888 barrier function Effects 0.000 claims description 21
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 18
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 18
- 239000000377 silicon dioxide Substances 0.000 claims description 17
- 229920002120 photoresistant polymer Polymers 0.000 claims description 14
- 125000006850 spacer group Chemical group 0.000 claims description 14
- 239000000463 material Substances 0.000 claims description 10
- 229910052751 metal Inorganic materials 0.000 claims description 8
- 239000002184 metal Substances 0.000 claims description 8
- 238000000059 patterning Methods 0.000 claims description 8
- 229910021332 silicide Inorganic materials 0.000 claims description 6
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 claims description 6
- 238000005498 polishing Methods 0.000 claims description 4
- 238000012797 qualification Methods 0.000 claims description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 10
- 229910052710 silicon Inorganic materials 0.000 description 10
- 239000010703 silicon Substances 0.000 description 10
- PNEYBMLMFCGWSK-UHFFFAOYSA-N Alumina Chemical compound [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 9
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 8
- 238000005516 engineering process Methods 0.000 description 8
- 229910052698 phosphorus Inorganic materials 0.000 description 8
- 239000011574 phosphorus Substances 0.000 description 8
- 239000012535 impurity Substances 0.000 description 6
- 229910052814 silicon oxide Inorganic materials 0.000 description 6
- 239000003989 dielectric material Substances 0.000 description 5
- 239000011810 insulating material Substances 0.000 description 5
- 229910021417 amorphous silicon Inorganic materials 0.000 description 4
- 229910052785 arsenic Inorganic materials 0.000 description 4
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 4
- 238000001259 photo etching Methods 0.000 description 4
- 229910021341 titanium silicide Inorganic materials 0.000 description 4
- 239000004020 conductor Substances 0.000 description 3
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 description 3
- 235000012239 silicon dioxide Nutrition 0.000 description 3
- 229910001936 tantalum oxide Inorganic materials 0.000 description 3
- 238000003491 array Methods 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 239000002002 slurry Substances 0.000 description 2
- 238000005260 corrosion Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 230000011514 reflex Effects 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B99/00—Subject matter not provided for in other groups of this subclass
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
- H01L29/42312—Gate electrodes for field effect devices
- H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
- H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
- H01L29/42324—Gate electrodes for transistors with a floating gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
- H01L29/42312—Gate electrodes for field effect devices
- H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
- H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
- H01L29/42324—Gate electrodes for transistors with a floating gate
- H01L29/42328—Gate electrodes for transistors with a floating gate with at least one additional gate other than the floating gate and the control gate, e.g. program gate, erase gate or select gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66825—Unipolar field-effect transistors with an insulated gate, i.e. MISFET with a floating gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66833—Unipolar field-effect transistors with an insulated gate, i.e. MISFET with a charge trapping gate insulator, e.g. MNOS transistors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
- H10B41/30—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the memory core region
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B43/00—EEPROM devices comprising charge-trapping gate insulators
- H10B43/30—EEPROM devices comprising charge-trapping gate insulators characterised by the memory core region
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B69/00—Erasable-and-programmable ROM [EPROM] devices not provided for in groups H10B41/00 - H10B63/00, e.g. ultraviolet erasable-and-programmable ROM [UVEPROM] devices
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Semiconductor Memories (AREA)
- Non-Volatile Memory (AREA)
- Electrodes Of Semiconductors (AREA)
Abstract
Description
Claims (6)
Applications Claiming Priority (6)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP00200831 | 2000-03-08 | ||
EP00200831.6 | 2000-03-08 | ||
EP00201929.7 | 2000-05-31 | ||
EP00201929 | 2000-05-31 | ||
EP00203561 | 2000-10-13 | ||
EP00203561.6 | 2000-10-13 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1364314A CN1364314A (zh) | 2002-08-14 |
CN100565882C true CN100565882C (zh) | 2009-12-02 |
Family
ID=27223253
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB018004350A Expired - Fee Related CN100565882C (zh) | 2000-03-08 | 2001-03-05 | 半导体器件制造方法 |
Country Status (7)
Country | Link |
---|---|
US (2) | US6642103B2 (zh) |
EP (1) | EP1183732A1 (zh) |
JP (1) | JP2003526924A (zh) |
KR (1) | KR100841891B1 (zh) |
CN (1) | CN100565882C (zh) |
TW (1) | TW516218B (zh) |
WO (1) | WO2001067517A1 (zh) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN110379708A (zh) * | 2019-07-22 | 2019-10-25 | 上海华力微电子有限公司 | 闪存的分裂栅极的制造方法 |
Families Citing this family (60)
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US7253467B2 (en) * | 2001-06-28 | 2007-08-07 | Samsung Electronics Co., Ltd. | Non-volatile semiconductor memory devices |
US8253183B2 (en) | 2001-06-28 | 2012-08-28 | Samsung Electronics Co., Ltd. | Charge trapping nonvolatile memory devices with a high-K blocking insulation layer |
US20060180851A1 (en) * | 2001-06-28 | 2006-08-17 | Samsung Electronics Co., Ltd. | Non-volatile memory devices and methods of operating the same |
JP4901048B2 (ja) * | 2001-06-28 | 2012-03-21 | 三星電子株式会社 | 浮遊トラップ型不揮発性メモリ素子 |
US7473959B2 (en) * | 2001-06-28 | 2009-01-06 | Samsung Electronics Co., Ltd. | Non-volatile semiconductor memory devices and methods of fabricating the same |
KR100859081B1 (ko) * | 2001-08-06 | 2008-09-17 | 엔엑스피 비 브이 | 반도체 디바이스 제조 방법 |
JP2003188290A (ja) * | 2001-12-19 | 2003-07-04 | Mitsubishi Electric Corp | 不揮発性半導体記憶装置およびその製造方法 |
KR100444604B1 (ko) * | 2001-12-22 | 2004-08-16 | 주식회사 하이닉스반도체 | 플래쉬 메모리 셀의 제조 방법 |
US7829411B2 (en) * | 2002-02-01 | 2010-11-09 | Nxp B.V. | Method and device to form high quality oxide layers of different thickness in one processing step |
US6878591B2 (en) * | 2002-02-07 | 2005-04-12 | Silicon Storage Technology, Inc. | Self aligned method of forming non-volatile memory cells with flat word line |
EP1339107B1 (de) * | 2002-02-25 | 2011-11-30 | Infineon Technologies AG | Feldeffekttransistor |
JP4647175B2 (ja) * | 2002-04-18 | 2011-03-09 | ルネサスエレクトロニクス株式会社 | 半導体集積回路装置 |
CN1315181C (zh) * | 2002-05-07 | 2007-05-09 | 皇家飞利浦电子股份有限公司 | 制造半导体非易失性存储器的方法 |
KR100471165B1 (ko) * | 2002-05-07 | 2005-03-08 | 삼성전자주식회사 | 평탄하지 않은 게이트 절연막을 구비하는 비휘발성 메모리장치 및 그 제조 방법 |
KR100435261B1 (ko) * | 2002-08-07 | 2004-06-11 | 삼성전자주식회사 | 스플릿 게이트형 플래쉬 메모리소자의 제조방법 |
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JP3927156B2 (ja) * | 2003-02-26 | 2007-06-06 | 株式会社東芝 | 不揮発性半導体記憶装置 |
US7429513B2 (en) | 2003-02-26 | 2008-09-30 | Nxp B.V. | Method of manufacturing a semiconductor device |
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US6995060B2 (en) * | 2003-03-19 | 2006-02-07 | Promos Technologies Inc. | Fabrication of integrated circuit elements in structures with protruding features |
US6962852B2 (en) * | 2003-03-19 | 2005-11-08 | Promos Technologies Inc. | Nonvolatile memories and methods of fabrication |
US6902974B2 (en) * | 2003-05-16 | 2005-06-07 | Promos Technologies Inc. | Fabrication of conductive gates for nonvolatile memories from layers with protruding portions |
US6974739B2 (en) * | 2003-05-16 | 2005-12-13 | Promos Technologies Inc. | Fabrication of dielectric on a gate surface to insulate the gate from another element of an integrated circuit |
US7214585B2 (en) * | 2003-05-16 | 2007-05-08 | Promos Technologies Inc. | Methods of fabricating integrated circuits with openings that allow electrical contact to conductive features having self-aligned edges |
US7101757B2 (en) * | 2003-07-30 | 2006-09-05 | Promos Technologies, Inc. | Nonvolatile memory cells with buried channel transistors |
US7060565B2 (en) * | 2003-07-30 | 2006-06-13 | Promos Technologies Inc. | Fabrication of dielectric for a nonvolatile memory cell having multiple floating gates |
US7052947B2 (en) * | 2003-07-30 | 2006-05-30 | Promos Technologies Inc. | Fabrication of gate dielectric in nonvolatile memories in which a memory cell has multiple floating gates |
US7169667B2 (en) | 2003-07-30 | 2007-01-30 | Promos Technologies Inc. | Nonvolatile memory cell with multiple floating gates formed after the select gate |
US6951782B2 (en) * | 2003-07-30 | 2005-10-04 | Promos Technologies, Inc. | Nonvolatile memory cell with multiple floating gates formed after the select gate and having upward protrusions |
US6992370B1 (en) * | 2003-09-04 | 2006-01-31 | Advanced Micro Devices, Inc. | Memory cell structure having nitride layer with reduced charge loss and method for fabricating same |
US7358134B2 (en) * | 2003-09-15 | 2008-04-15 | Powerchip Semiconductor Corp. | Split gate flash memory cell and manufacturing method thereof |
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US7569882B2 (en) * | 2003-12-23 | 2009-08-04 | Interuniversitair Microelektronica Centrum (Imec) | Non-volatile multibit memory cell and method of manufacturing thereof |
US7279736B2 (en) * | 2003-12-26 | 2007-10-09 | Dongbu Electronics Co., Ltd. | Nonvolatile memory device and methods of fabricating and driving the same |
KR20050071956A (ko) * | 2004-01-05 | 2005-07-08 | 삼성전자주식회사 | 반도체 메모리 소자 및 제조 방법 |
KR100655283B1 (ko) * | 2004-10-13 | 2006-12-11 | 삼성전자주식회사 | 이이피롬 장치 및 그 제조 방법 |
JP4541220B2 (ja) * | 2005-04-13 | 2010-09-08 | ルネサスエレクトロニクス株式会社 | 半導体集積回路装置の製造方法 |
KR100683389B1 (ko) * | 2005-09-20 | 2007-02-15 | 동부일렉트로닉스 주식회사 | 플래시 메모리의 셀 트랜지스터 및 그 제조 방법 |
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KR101338158B1 (ko) * | 2007-07-16 | 2013-12-06 | 삼성전자주식회사 | 비휘발성 기억 소자 및 그 형성 방법 |
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JP5521555B2 (ja) * | 2008-02-20 | 2014-06-18 | 日本電気株式会社 | 不揮発性記憶装置およびその製造方法 |
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US8101492B2 (en) * | 2009-09-23 | 2012-01-24 | Infineon Technologies Ag | Method for making semiconductor device |
US8951864B2 (en) * | 2012-02-13 | 2015-02-10 | Taiwan Semiconductor Manufacturing Company, Ltd. | Split-gate device and method of fabricating the same |
US8895397B1 (en) * | 2013-10-15 | 2014-11-25 | Globalfoundries Singapore Pte. Ltd. | Methods for forming thin film storage memory cells |
US9397176B2 (en) * | 2014-07-30 | 2016-07-19 | Freescale Semiconductor, Inc. | Method of forming split gate memory with improved reliability |
US9425044B2 (en) * | 2014-08-18 | 2016-08-23 | Taiwan Semiconductor Manufacturing Co., Ltd. | Composite spacer for silicon nanocrystal memory storage |
US9379121B1 (en) * | 2015-01-05 | 2016-06-28 | Silicon Storage Technology, Inc. | Split gate non-volatile flash memory cell having metal gates and method of making same |
US9406812B1 (en) * | 2015-01-12 | 2016-08-02 | Synopsys, Inc. | Asymmetric dense floating gate nonvolatile memory with decoupled capacitor |
CN107768375B (zh) * | 2017-09-26 | 2020-02-21 | 上海华力微电子有限公司 | 一种分裂栅的栅极形成方法 |
US10985171B2 (en) | 2018-09-26 | 2021-04-20 | Sandisk Technologies Llc | Three-dimensional flat NAND memory device including wavy word lines and method of making the same |
US11018151B2 (en) | 2018-09-26 | 2021-05-25 | Sandisk Technologies Llc | Three-dimensional flat NAND memory device including wavy word lines and method of making the same |
US10700090B1 (en) | 2019-02-18 | 2020-06-30 | Sandisk Technologies Llc | Three-dimensional flat NAND memory device having curved memory elements and methods of making the same |
US10700078B1 (en) | 2019-02-18 | 2020-06-30 | Sandisk Technologies Llc | Three-dimensional flat NAND memory device having curved memory elements and methods of making the same |
CN110417811B (zh) * | 2019-08-22 | 2021-08-10 | 上海兆芯集成电路有限公司 | 比特流编码压缩的方法及装置 |
KR102479666B1 (ko) | 2021-05-07 | 2022-12-21 | 주식회사 키파운드리 | 비휘발성 메모리 셀을 포함하는 반도체 소자 및 그 제조 방법 |
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JP2597719B2 (ja) * | 1989-07-31 | 1997-04-09 | 株式会社東芝 | 不揮発性半導体記憶装置およびその動作方法 |
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JPH04359476A (ja) | 1991-06-05 | 1992-12-11 | Oki Electric Ind Co Ltd | 不揮発性半導体メモリの書き換え方法 |
US5278439A (en) | 1991-08-29 | 1994-01-11 | Ma Yueh Y | Self-aligned dual-bit split gate (DSG) flash EEPROM cell |
JP3221754B2 (ja) * | 1992-12-15 | 2001-10-22 | ローム株式会社 | 半導体装置 |
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JP2658907B2 (ja) * | 1994-09-29 | 1997-09-30 | 日本電気株式会社 | 不揮発性半導体記憶装置およびその製造方法 |
KR0142601B1 (ko) | 1995-02-28 | 1998-07-01 | 김주용 | 플래쉬 이이피롬 셀의 제조방법 |
US5703388A (en) * | 1996-07-19 | 1997-12-30 | Mosel Vitelic Inc. | Double-poly monos flash EEPROM cell |
US5907775A (en) * | 1997-04-11 | 1999-05-25 | Vanguard International Semiconductor Corporation | Non-volatile memory device with high gate coupling ratio and manufacturing process therefor |
JPH1187664A (ja) * | 1997-04-28 | 1999-03-30 | Nippon Steel Corp | 半導体装置及びその製造方法 |
-
2001
- 2001-03-05 CN CNB018004350A patent/CN100565882C/zh not_active Expired - Fee Related
- 2001-03-05 US US09/980,510 patent/US6642103B2/en not_active Expired - Lifetime
- 2001-03-05 KR KR1020017014189A patent/KR100841891B1/ko not_active IP Right Cessation
- 2001-03-05 EP EP01921310A patent/EP1183732A1/en not_active Withdrawn
- 2001-03-05 JP JP2001566190A patent/JP2003526924A/ja not_active Withdrawn
- 2001-03-05 WO PCT/EP2001/002432 patent/WO2001067517A1/en active Application Filing
- 2001-04-04 TW TW090108121A patent/TW516218B/zh not_active IP Right Cessation
-
2003
- 2003-06-16 US US10/462,846 patent/US6885058B2/en not_active Expired - Lifetime
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN110379708A (zh) * | 2019-07-22 | 2019-10-25 | 上海华力微电子有限公司 | 闪存的分裂栅极的制造方法 |
CN110379708B (zh) * | 2019-07-22 | 2021-08-13 | 上海华力微电子有限公司 | 闪存的分裂栅极的制造方法 |
Also Published As
Publication number | Publication date |
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KR100841891B1 (ko) | 2008-06-30 |
US20020137290A1 (en) | 2002-09-26 |
KR20020008177A (ko) | 2002-01-29 |
US6642103B2 (en) | 2003-11-04 |
US20040014274A1 (en) | 2004-01-22 |
WO2001067517A1 (en) | 2001-09-13 |
US6885058B2 (en) | 2005-04-26 |
JP2003526924A (ja) | 2003-09-09 |
TW516218B (en) | 2003-01-01 |
CN1364314A (zh) | 2002-08-14 |
EP1183732A1 (en) | 2002-03-06 |
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