CN100537053C - 掩膜坯及掩膜坯的制造方法 - Google Patents

掩膜坯及掩膜坯的制造方法 Download PDF

Info

Publication number
CN100537053C
CN100537053C CNB2004100118724A CN200410011872A CN100537053C CN 100537053 C CN100537053 C CN 100537053C CN B2004100118724 A CNB2004100118724 A CN B2004100118724A CN 200410011872 A CN200410011872 A CN 200410011872A CN 100537053 C CN100537053 C CN 100537053C
Authority
CN
China
Prior art keywords
substrate
diaphragm
against corrosion
solution against
rotary speed
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CNB2004100118724A
Other languages
English (en)
Chinese (zh)
Other versions
CN1605397A (zh
Inventor
小林英雄
樋口孝雄
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hoya Corp
Original Assignee
Hoya Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hoya Corp filed Critical Hoya Corp
Publication of CN1605397A publication Critical patent/CN1605397A/zh
Application granted granted Critical
Publication of CN100537053C publication Critical patent/CN100537053C/zh
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Images

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/16—Coating processes; Apparatus therefor
    • G03F7/162—Coating on a rotating support, e.g. using a whirler or a spinner
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D1/00—Processes for applying liquids or other fluent materials
    • B05D1/40—Distributing applied liquids or other fluent materials by members moving relatively to surface
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/20—Masks or mask blanks for imaging by charged particle beam [CPB] radiation, e.g. by electron beam; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/38—Masks having auxiliary features, e.g. special coatings or marks for alignment or testing; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/50—Mask blanks not covered by G03F1/20 - G03F1/34; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/62—Pellicles, e.g. pellicle assemblies, e.g. having membrane on support frame; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/66—Containers specially adapted for masks, mask blanks or pellicles; Preparation thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
    • H01L21/0274—Photolithographic processes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/033—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers
    • H01L21/0334—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane
    • H01L21/0337—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane characterised by the process involved to create the mask, e.g. lift-off masks, sidewalls, or to modify the mask, e.g. pre-treatment, post-treatment

Landscapes

  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Inorganic Chemistry (AREA)
  • Chemical & Material Sciences (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Application Of Or Painting With Fluid Materials (AREA)
  • Materials For Photolithography (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
CNB2004100118724A 2003-09-29 2004-09-24 掩膜坯及掩膜坯的制造方法 Expired - Fee Related CN100537053C (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2003338533 2003-09-29
JP2003338533 2003-09-29

Related Child Applications (1)

Application Number Title Priority Date Filing Date
CN2006101727019A Division CN1983028B (zh) 2003-09-29 2004-09-24 掩膜坯及变换掩膜的制造方法

Publications (2)

Publication Number Publication Date
CN1605397A CN1605397A (zh) 2005-04-13
CN100537053C true CN100537053C (zh) 2009-09-09

Family

ID=34373315

Family Applications (2)

Application Number Title Priority Date Filing Date
CNB2004100118724A Expired - Fee Related CN100537053C (zh) 2003-09-29 2004-09-24 掩膜坯及掩膜坯的制造方法
CN2006101727019A Expired - Fee Related CN1983028B (zh) 2003-09-29 2004-09-24 掩膜坯及变换掩膜的制造方法

Family Applications After (1)

Application Number Title Priority Date Filing Date
CN2006101727019A Expired - Fee Related CN1983028B (zh) 2003-09-29 2004-09-24 掩膜坯及变换掩膜的制造方法

Country Status (6)

Country Link
US (1) US7674561B2 (enExample)
JP (2) JP2011040770A (enExample)
KR (5) KR20050031425A (enExample)
CN (2) CN100537053C (enExample)
DE (1) DE102004047355B4 (enExample)
TW (2) TWI391779B (enExample)

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE112005001588B4 (de) * 2004-07-09 2021-02-25 Hoya Corp. Fotomaskenrohling, Fotomaskenherstellungsverfahren und Halbleiterbausteinherstellungsverfahren
US7678511B2 (en) * 2006-01-12 2010-03-16 Asahi Glass Company, Limited Reflective-type mask blank for EUV lithography
KR100780814B1 (ko) * 2006-08-16 2007-11-30 주식회사 에스앤에스텍 차폐판 및 이를 구비한 레지스트 코팅장치
JP5348866B2 (ja) * 2007-09-14 2013-11-20 Ｈｏｙａ株式会社 マスクの製造方法
JP5393972B2 (ja) * 2007-11-05 2014-01-22 Ｈｏｙａ株式会社 マスクブランク及び転写用マスクの製造方法
JP4663749B2 (ja) * 2008-03-11 2011-04-06 大日本印刷株式会社 反射型マスクの検査方法および製造方法
KR101654515B1 (ko) * 2009-07-01 2016-09-07 주식회사 에스앤에스텍 포토마스크 블랭크, 포토마스크 블랭크의 제조방법 및 포토마스크
CN101968606B (zh) * 2009-07-27 2013-01-23 北京京东方光电科技有限公司 掩膜基板和边框胶固化系统
KR102239197B1 (ko) * 2012-09-13 2021-04-09 호야 가부시키가이샤 마스크 블랭크의 제조 방법 및 전사용 마스크의 제조 방법
KR102167485B1 (ko) * 2012-09-13 2020-10-19 호야 가부시키가이샤 마스크 블랭크의 제조 방법 및 전사용 마스크의 제조 방법
CN106610568A (zh) * 2015-10-27 2017-05-03 沈阳芯源微电子设备有限公司 一种涂胶显影工艺模块及该模块内环境参数的控制方法
JP6504996B2 (ja) * 2015-11-04 2019-04-24 東京エレクトロン株式会社 塗布膜形成方法、塗布膜形成装置、及びコンピュータ読み取り可能な記録媒体
KR102513705B1 (ko) 2018-06-29 2023-03-24 후지필름 가부시키가이샤 감활성광선성 또는 감방사선성 수지 조성물, 감활성광선성 또는 감방사선성막, 패턴 형성 방법, 및 포토마스크
KR102739062B1 (ko) * 2018-09-10 2024-12-05 도쿄엘렉트론가부시키가이샤 도포막 형성 방법 및 도포막 형성 장치
JP7154572B2 (ja) * 2018-09-12 2022-10-18 Hoya株式会社 マスクブランク、転写用マスク、及び半導体デバイスの製造方法
JP7202901B2 (ja) * 2019-01-18 2023-01-12 東京エレクトロン株式会社 塗布膜形成方法及び塗布膜形成装置
TWI699580B (zh) * 2019-03-07 2020-07-21 友達光電股份有限公司 陣列基板
KR102743196B1 (ko) * 2023-04-17 2024-12-16 에스케이엔펄스 주식회사 블랭크 마스크 및 이의 제조 방법

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4748053A (en) * 1983-12-08 1988-05-31 Hoya Corporation Method of forming a uniform resist film by selecting a duration of rotation
US5199988A (en) * 1988-08-19 1993-04-06 Hitachi Maxell, Ltd. Manufacturing apparatus and method for recording medium
JPH1024262A (ja) 1996-07-12 1998-01-27 Canon Inc 回転塗布方法及び回転塗布装置

Family Cites Families (59)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS54153844A (en) * 1978-05-23 1979-12-04 Cho Lsi Gijutsu Kenkyu Kumiai Rotary coating for resist
JPS618480U (ja) * 1984-06-18 1986-01-18 凸版印刷株式会社 回転塗布装置
JPS6295172A (ja) 1985-10-21 1987-05-01 Hitachi Ltd 回転塗布装置
JPS63229169A (ja) 1987-03-18 1988-09-26 Hitachi Ltd 塗布装置
JP2583239B2 (ja) * 1987-06-16 1997-02-19 大日本印刷株式会社 フォトマスク用基板等へのレジスト塗布方法およびスピンナチャック装置
JP2505033B2 (ja) * 1988-11-28 1996-06-05 東京応化工業株式会社 電子線レジスト組成物及びそれを用いた微細パタ―ンの形成方法
JPH02249225A (ja) * 1989-03-22 1990-10-05 Fujitsu Ltd レジスト塗布装置
US4988464A (en) * 1989-06-01 1991-01-29 Union Carbide Corporation Method for producing powder by gas atomization
JPH0588367A (ja) * 1991-09-30 1993-04-09 Fujitsu Ltd レジスト組成物とレジストパターンの形成方法
WO1994019396A1 (en) 1992-02-12 1994-09-01 Brewer Science, Inc. Polymers with intrinsic light-absorbing properties
US5691115A (en) * 1992-06-10 1997-11-25 Hitachi, Ltd. Exposure method, aligner, and method of manufacturing semiconductor integrated circuit devices
KR100298609B1 (ko) * 1992-07-30 2001-11-30 기타지마 요시토시 위상쉬프트층을갖는포토마스크의제조방법
DE4400975C2 (de) * 1993-01-14 2001-11-29 Toshiba Kawasaki Kk Verfahren zum Ausbilden von Mustern
JPH06250380A (ja) * 1993-02-26 1994-09-09 Hoya Corp 不要膜除去方法及びその装置並びに位相シフトマスクブランクの製造方法
JPH06267836A (ja) 1993-03-15 1994-09-22 Casio Comput Co Ltd レジスト塗布方法およびその装置
JP3345468B2 (ja) * 1993-07-05 2002-11-18 ホーヤ株式会社 不要膜除去方法及びその装置並びに位相シフトマスクブランクス製造方法
KR960015081A (ko) 1993-07-15 1996-05-22 마쯔모또 에이이찌 화학증폭형 레지스트 조성물
US5695817A (en) * 1994-08-08 1997-12-09 Tokyo Electron Limited Method of forming a coating film
JPH0945611A (ja) 1995-07-27 1997-02-14 Dainippon Screen Mfg Co Ltd 回転式基板塗布装置
US6165673A (en) 1995-12-01 2000-12-26 International Business Machines Corporation Resist composition with radiation sensitive acid generator
JPH09225375A (ja) 1996-02-22 1997-09-02 Seiko Epson Corp スピンコーターヘッド
JP3198915B2 (ja) * 1996-04-02 2001-08-13 信越化学工業株式会社 化学増幅ポジ型レジスト材料
TW344097B (en) 1996-04-09 1998-11-01 Tokyo Electron Co Ltd Photoresist treating device of substrate and photoresist treating method
JPH1028925A (ja) 1996-07-19 1998-02-03 Dainippon Screen Mfg Co Ltd 塗布液塗布方法
JPH1090882A (ja) 1996-09-17 1998-04-10 Fuji Photo Film Co Ltd 化学増幅型ポジレジスト組成物
JPH10154650A (ja) 1996-11-25 1998-06-09 Dainippon Screen Mfg Co Ltd 塗布液塗布方法
US5962184A (en) 1996-12-13 1999-10-05 International Business Machines Corporation Photoresist composition comprising a copolymer of a hydroxystyrene and a (meth)acrylate substituted with an alicyclic ester substituent
US5773082A (en) 1997-01-16 1998-06-30 United Microelectronics Corp. Method for applying photoresist on wafer
JPH10286510A (ja) * 1997-04-16 1998-10-27 Fujitsu Ltd レジスト塗布装置及びレジスト塗布方法
JPH1142460A (ja) * 1997-07-28 1999-02-16 Dainippon Screen Mfg Co Ltd 基板処理装置
US5780105A (en) 1997-07-31 1998-07-14 Vanguard International Semiconductor Corporation Method for uniformly coating a semiconductor wafer with photoresist
JPH1149806A (ja) * 1997-08-01 1999-02-23 Nippon Zeon Co Ltd （メタ）アクリル酸エステル共重合体の製造方法
WO1999024869A1 (en) * 1997-11-11 1999-05-20 Nikon Corporation Photomask, aberration correcting plate, exposure device and method of producing microdevice
US6162564A (en) 1997-11-25 2000-12-19 Kabushiki Kaisha Toshiba Mask blank and method of producing mask
JPH11345763A (ja) * 1998-06-02 1999-12-14 Nippon Foundry Inc 半導体基板の処理装置
JP4317613B2 (ja) * 1999-06-30 2009-08-19 株式会社エムテーシー 基板保持装置
JP3602419B2 (ja) * 1999-07-23 2004-12-15 株式会社半導体先端テクノロジーズ レジスト塗布方法、レジスト塗布装置、マスクパターン形成方法および液晶基板のパターン形成方法
US6527860B1 (en) 1999-10-19 2003-03-04 Tokyo Electron Limited Substrate processing apparatus
JP4043163B2 (ja) * 1999-12-24 2008-02-06 エム・セテック株式会社 薬液塗布方法とその装置
TWI228755B (en) * 2000-02-17 2005-03-01 Toshiba Corp Chemical liquid processing apparatus and the method thereof
JP2001228633A (ja) * 2000-02-17 2001-08-24 Matsushita Electric Ind Co Ltd ホールパターンの形成方法
JP3689301B2 (ja) 2000-03-15 2005-08-31 Ｈｏｙａ株式会社 フォトマスクブランクの製造方法及び不要膜除去装置
US6327793B1 (en) 2000-03-20 2001-12-11 Silicon Valley Group Method for two dimensional adaptive process control of critical dimensions during spin coating process
JP2001274076A (ja) * 2000-03-28 2001-10-05 Toshiba Corp マーク検出方法、露光方法及びパターン検査方法
EP1143300A1 (en) 2000-04-03 2001-10-10 Shipley Company LLC Photoresist compositions and use of same
JP2001305713A (ja) 2000-04-25 2001-11-02 Shin Etsu Chem Co Ltd フォトマスク用ブランクス及びフォトマスク
JP3712047B2 (ja) 2000-08-14 2005-11-02 信越化学工業株式会社 レジスト材料及びパターン形成方法
JP3768786B2 (ja) 2000-08-15 2006-04-19 株式会社ルネサステクノロジ ホトマスクの製造方法、ホトマスクブランクスの製造方法およびホトマスクの再生方法
JP2002090978A (ja) 2000-09-12 2002-03-27 Hoya Corp 位相シフトマスクブランクの製造方法、及び位相シフトマスクブランクの製造装置
JP3914386B2 (ja) 2000-12-28 2007-05-16 株式会社ルネサステクノロジ フォトマスク、その製造方法、パターン形成方法および半導体装置の製造方法
JP2002357905A (ja) * 2001-03-28 2002-12-13 Sumitomo Chem Co Ltd レジスト組成物
JP3642316B2 (ja) * 2001-06-15 2005-04-27 日本電気株式会社 化学増幅レジスト用単量体、化学増幅レジスト用重合体、化学増幅レジスト組成物、パターン形成方法
WO2003006407A1 (en) * 2001-07-13 2003-01-23 Kyowa Yuka Co., Ltd. Process for producing ether compound
TW591341B (en) 2001-09-26 2004-06-11 Shipley Co Llc Coating compositions for use with an overcoated photoresist
JP3607903B2 (ja) * 2001-09-28 2005-01-05 Ｈｏｙａ株式会社 マスクブランク、不要膜除去方法及びその装置、並びにマスクブランク及びマスクの製造方法
JP4195393B2 (ja) 2002-03-12 2008-12-10 ウェルゲイト・コーポレイション 不完了呼に対する発信者情報提供方法及び装置
JP4118585B2 (ja) * 2002-04-03 2008-07-16 Ｈｏｙａ株式会社 マスクブランクの製造方法
JP3973103B2 (ja) * 2003-03-31 2007-09-12 Ｈｏｙａ株式会社 マスクブランクスの製造方法
JP4029215B2 (ja) 2004-03-24 2008-01-09 株式会社村田製作所 位相調整回路およびこれを備えた発振器

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4748053A (en) * 1983-12-08 1988-05-31 Hoya Corporation Method of forming a uniform resist film by selecting a duration of rotation
US5199988A (en) * 1988-08-19 1993-04-06 Hitachi Maxell, Ltd. Manufacturing apparatus and method for recording medium
JPH1024262A (ja) 1996-07-12 1998-01-27 Canon Inc 回転塗布方法及び回転塗布装置

Also Published As

Publication number Publication date
DE102004047355B4 (de) 2022-03-10
TWI387846B (zh) 2013-03-01
KR101045177B1 (ko) 2011-06-30
JP2011040770A (ja) 2011-02-24
KR20080075816A (ko) 2008-08-19
KR20070039908A (ko) 2007-04-13
JP2015111312A (ja) 2015-06-18
KR20050031425A (ko) 2005-04-06
CN1983028A (zh) 2007-06-20
DE102004047355A1 (de) 2005-04-28
KR20100085003A (ko) 2010-07-28
KR20070039909A (ko) 2007-04-13
US20050069787A1 (en) 2005-03-31
US7674561B2 (en) 2010-03-09
KR101047646B1 (ko) 2011-07-07
TW200517786A (en) 2005-06-01
CN1983028B (zh) 2012-07-25
TW200837492A (en) 2008-09-16
CN1605397A (zh) 2005-04-13
TWI391779B (zh) 2013-04-01
KR100976977B1 (ko) 2010-08-23

Similar Documents

Publication Publication Date Title
CN100537053C (zh) 掩膜坯及掩膜坯的制造方法
TWI505046B (zh) 光阻圖型之形成方法及微細化光阻圖型之樹脂組成物
WO2016056355A1 (ja) ナフトール型カリックスアレーン化合物及びその製造方法、感光性組成物、レジスト材料、並びに塗膜
JP7506796B2 (ja) 高精細パターンの製造方法およびそれを用いた表示素子の製造方法
JP4516150B1 (ja) 感光性樹脂組成物
JP4629396B2 (ja) マスクブランクの製造方法及び転写マスクの製造方法
WO2007013540A1 (ja) マスクブランクの製造方法及び露光用マスクの製造方法
US6338930B1 (en) Positive photoresist layer and a method for using the same
TWI802606B (zh) 微細圖案之製造方法及使用其之顯示元件之製造方法
JPH1184644A (ja) ポジ型レジスト組成物及びこれを用いたパターンの形成方法
KR100608351B1 (ko) 리플로우 공정시 ｃｄ 균일도 개선방법
JP2005036033A (ja) フォトレジスト用フェノール樹脂
CN1157475A (zh) 超强酸催化的无显影气相光刻胶
JPH06244100A (ja) 二層構造レジストを有する基材の製造方法およびそれに用いる製造装置

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C14 Grant of patent or utility model
GR01 Patent grant
CF01 Termination of patent right due to non-payment of annual fee

Granted publication date: 20090909

CF01 Termination of patent right due to non-payment of annual fee