CN100533710C - 薄膜晶体管基板的制造方法和剥除溶液 - Google Patents
薄膜晶体管基板的制造方法和剥除溶液 Download PDFInfo
- Publication number
- CN100533710C CN100533710C CNB2005100996244A CN200510099624A CN100533710C CN 100533710 C CN100533710 C CN 100533710C CN B2005100996244 A CNB2005100996244 A CN B2005100996244A CN 200510099624 A CN200510099624 A CN 200510099624A CN 100533710 C CN100533710 C CN 100533710C
- Authority
- CN
- China
- Prior art keywords
- stripping composition
- conductive layer
- weight ratio
- substrate
- pattern
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Images
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
Landscapes
- Physics & Mathematics (AREA)
- Nonlinear Science (AREA)
- Mathematical Physics (AREA)
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Thin Film Transistor (AREA)
- Photosensitive Polymer And Photoresist Processing (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Liquid Crystal (AREA)
Abstract
Description
金属 | 实例 | 3分钟(ppb) | 10分钟(ppb) | 30分钟(ppb) |
铟 | 实例3 | 125.2 | 206.8 | 358.2 |
锌 | 实例3 | 11.9 | 16.4 | 20.7 |
10分钟(ml) | 20分钟(ml) | 30分钟(ml) | 40分钟(ml) | |
对比例 | 10 | 20 | 30 | 40.5 |
实例4 | 7 | 10.5 | 14 | 15 |
Claims (21)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR20040068791 | 2004-08-30 | ||
KR68791/04 | 2004-08-30 | ||
KR44153/05 | 2005-05-25 |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN2009100029992A Division CN101477969B (zh) | 2004-08-30 | 2005-08-30 | 薄膜晶体管基板的制造方法和剥除溶液 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1744300A CN1744300A (zh) | 2006-03-08 |
CN100533710C true CN100533710C (zh) | 2009-08-26 |
Family
ID=36139612
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN2009100029992A Active CN101477969B (zh) | 2004-08-30 | 2005-08-30 | 薄膜晶体管基板的制造方法和剥除溶液 |
CNB2005100996244A Active CN100533710C (zh) | 2004-08-30 | 2005-08-30 | 薄膜晶体管基板的制造方法和剥除溶液 |
Family Applications Before (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN2009100029992A Active CN101477969B (zh) | 2004-08-30 | 2005-08-30 | 薄膜晶体管基板的制造方法和剥除溶液 |
Country Status (3)
Country | Link |
---|---|
KR (1) | KR101129433B1 (zh) |
CN (2) | CN101477969B (zh) |
TW (1) | TWI430400B (zh) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP5143731B2 (ja) * | 2006-06-21 | 2013-02-13 | 出光興産株式会社 | ストリッピング組成物、tft基板の製造方法及びストリッピング組成物のリサイクル方法 |
KR101300183B1 (ko) | 2006-11-20 | 2013-08-26 | 삼성디스플레이 주식회사 | 박막 트랜지스터 기판 및 이의 제조 방법 |
KR102009545B1 (ko) | 2015-03-05 | 2019-10-21 | 동우 화인켐 주식회사 | 레지스트 박리액 조성물 |
KR102269328B1 (ko) * | 2015-03-12 | 2021-06-25 | 동우 화인켐 주식회사 | 식각액 조성물 및 이를 이용한 금속 패턴의 형성 방법 |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6326130B1 (en) * | 1993-10-07 | 2001-12-04 | Mallinckrodt Baker, Inc. | Photoresist strippers containing reducing agents to reduce metal corrosion |
KR100249387B1 (ko) * | 1997-12-02 | 2000-03-15 | 김영환 | 반도체 제조용 건식각장치의 이물제거방법 |
JP2000284506A (ja) * | 1999-03-31 | 2000-10-13 | Sharp Corp | フォトレジスト剥離剤組成物および剥離方法 |
WO2002077120A1 (en) * | 2001-03-27 | 2002-10-03 | Advanced Technology Materials, Inc. | Aqueous cleaning composition containing copper-specific corrosion inhibitor for cleaning inorganic residues on semiconductor substrate |
KR20040009100A (ko) * | 2002-07-22 | 2004-01-31 | 삼성전자주식회사 | 포토레지스트 스트리퍼의 재생방법 |
US8236485B2 (en) * | 2002-12-20 | 2012-08-07 | Advanced Technology Materials, Inc. | Photoresist removal |
-
2005
- 2005-05-25 KR KR1020050044153A patent/KR101129433B1/ko active IP Right Grant
- 2005-08-30 CN CN2009100029992A patent/CN101477969B/zh active Active
- 2005-08-30 CN CNB2005100996244A patent/CN100533710C/zh active Active
- 2005-08-30 TW TW094129706A patent/TWI430400B/zh active
Also Published As
Publication number | Publication date |
---|---|
CN101477969A (zh) | 2009-07-08 |
TW200620555A (en) | 2006-06-16 |
TWI430400B (zh) | 2014-03-11 |
KR20060048092A (ko) | 2006-05-18 |
CN101477969B (zh) | 2010-12-22 |
CN1744300A (zh) | 2006-03-08 |
KR101129433B1 (ko) | 2012-03-26 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US7820368B2 (en) | Photoresist stripper composition and methods for forming wire structures and for fabricating thin film transistor substrate using composition | |
CN1273858C (zh) | 液晶显示装置的制造方法 | |
CN105762112A (zh) | 薄膜晶体管阵列基板及其制备方法、显示装置 | |
US20080258143A1 (en) | Thin film transitor substrate and method of manufacturing the same | |
CN100533710C (zh) | 薄膜晶体管基板的制造方法和剥除溶液 | |
US7795685B2 (en) | Method of manufacturing a thin film transistor substrate and stripping composition | |
JP2010135384A (ja) | 薄膜トランジスタアレイ基板、その製造方法及び液晶表示装置 | |
CN102496625A (zh) | 薄膜晶体管、画素结构及其制造方法 | |
CN103107133A (zh) | 阵列基板及其制造方法和显示装置 | |
CN107104153A (zh) | 非线性元件、阵列基板以及阵列基板的制造方法 | |
US8461585B2 (en) | Display substrate and method of manufacturing the same | |
US8586406B1 (en) | Method for forming an oxide thin film transistor | |
CN102800629B (zh) | 一种有机薄膜晶体管阵列基板制作方法 | |
CN102456620B (zh) | 阵列基板及其制造方法 | |
JP2007027768A (ja) | 薄膜トランジスタ基板の製造方法 | |
CN102692771B (zh) | 一种液晶显示器、薄膜晶体管阵列基板及其制造方法 | |
CN107026120B (zh) | 一种阵列基板的制作方法 | |
CN105633100B (zh) | 薄膜晶体管阵列面板及其制作方法 | |
CN106206623A (zh) | 一种显示基板、其制作方法、显示面板及显示装置 | |
CN105742297A (zh) | 薄膜晶体管阵列面板及其制作方法 | |
US20150137112A1 (en) | Method for Manufacturing Thin-Film Transistor and Thin-Film Transistor Manufactured with Same | |
CN104934448A (zh) | 阵列基板及其制作方法、显示装置 | |
GB2542094B (en) | Method for manufacturing coplanar oxide semiconductor TFT substrate | |
CN101473420B (zh) | 脱模组合物、tft基板的制造方法及脱模组合物的循环方法 | |
US20150147836A1 (en) | Composition for cleaning flat panel display and method for manufacturing display device using the same |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
ASS | Succession or assignment of patent right |
Owner name: SAMSUNG DISPLAY CO., LTD. Free format text: FORMER OWNER: SAMSUNG ELECTRONICS CO., LTD. Effective date: 20121106 |
|
C41 | Transfer of patent application or patent right or utility model | ||
TR01 | Transfer of patent right |
Effective date of registration: 20121106 Address after: Gyeonggi Do, South Korea Patentee after: SAMSUNG DISPLAY Co.,Ltd. Address before: Gyeonggi Do, South Korea Patentee before: Samsung Electronics Co.,Ltd. |
|
TR01 | Transfer of patent right |
Effective date of registration: 20220829 Address after: 9-2, Guangdong Province, Shenzhen Guangming Tang Ming Road Patentee after: TCL Huaxing Photoelectric Technology Co.,Ltd. Address before: Gyeonggi Do, South Korea Patentee before: SAMSUNG DISPLAY Co.,Ltd. |
|
TR01 | Transfer of patent right |