CN105742297A - 薄膜晶体管阵列面板及其制作方法 - Google Patents

薄膜晶体管阵列面板及其制作方法 Download PDF

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CN105742297A
CN105742297A CN201610226945.4A CN201610226945A CN105742297A CN 105742297 A CN105742297 A CN 105742297A CN 201610226945 A CN201610226945 A CN 201610226945A CN 105742297 A CN105742297 A CN 105742297A
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electrode
layer
film transistor
metal level
hole
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CN105742297B (zh
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周志超
夏慧
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TCL China Star Optoelectronics Technology Co Ltd
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Shenzhen China Star Optoelectronics Technology Co Ltd
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Priority to PCT/CN2016/081564 priority patent/WO2017177493A1/zh
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Abstract

本发明公开了一种薄膜晶体管阵列面板及其制作方法。薄膜晶体管阵列面板包括：基板；薄膜晶体管，薄膜晶体管包括：栅极；半导体层；源极；以及漏极；绝缘层，绝缘层设置在栅极和基板上；蚀刻阻挡层，蚀刻阻挡层设置于半导体层及绝缘层上；电极层，电极层包括第一电极部和第二电极部，第一电极部设置于源极上，第一电极部用于对源极进行覆盖和保护，第二电极部设置于漏极上，第二电极部用于对漏极进行覆盖和保护；其中，半导体层设置于绝缘层上，蚀刻阻挡层设置有第一通孔和第二通孔，源极和漏极分别通过第一通孔和第二通孔与半导体层连接。本发明能简化薄膜晶体管阵列面板的制作工艺，节省制作成本。

Description

薄膜晶体管阵列面板及其制作方法
【技术领域】
本发明涉及显示技术领域，特别涉及一种薄膜晶体管阵列面板及其制作方法。
【背景技术】
传统的薄膜晶体管阵列面板中一般需要六道光罩制程。
上述传统的薄膜晶体管阵列面板一般设置有保护层/钝化层(PassivationLayer)。该保护层/钝化层的制作需要耗费其中的一道光罩制程。
由于需要六道光罩制程，因此上述传统的薄膜晶体管阵列面板的制作工艺较复杂，成本较高。
故，有必要提出一种新的技术方案，以解决上述技术问题。
【发明内容】
本发明的目的在于提供一种薄膜晶体管阵列面板及其制作方法，其能简化薄膜晶体管阵列面板的制作工艺，节省制作成本。
为解决上述问题，本发明的技术方案如下：
一种薄膜晶体管阵列面板，所述薄膜晶体管阵列面板包括：基板；薄膜晶体管，所述薄膜晶体管包括：栅极；半导体层；源极；以及漏极；绝缘层，所述绝缘层设置在所述栅极和所述基板上；蚀刻阻挡层，所述蚀刻阻挡层设置于所述半导体层及所述绝缘层上；电极层，所述电极层包括第一电极部和第二电极部，所述第一电极部设置于所述源极上，所述第一电极部用于对所述源极进行覆盖和保护，所述第二电极部设置于所述漏极上，所述第二电极部用于对所述漏极进行覆盖和保护；其中，所述半导体层设置于所述绝缘层上，所述蚀刻阻挡层设置有第一通孔和第二通孔，所述源极和所述漏极分别通过所述第一通孔和所述第二通孔与所述半导体层连接。
在上述薄膜晶体管阵列面板中，所述栅极是通过在所述基板上设置第一金属层，并对所述金属层实施第一光罩制程来形成的；所述半导体层是通过在所述绝缘层上设置半导体材料，并对所述半导体材料实施第二光罩制程来形成的；所述第一通孔和所述第二通孔是通过在所述绝缘层和所述半导体层上设置蚀刻阻挡材料，并对所述蚀刻阻挡材料实施第三光罩制程来形成的；所述源极、所述漏极和所述电极层是通过在所述蚀刻阻挡层上、所述第一通孔内、所述第二通孔内设置第二金属层，然后在所述第二金属层上设置第三金属层，并对所述第二金属层和所述第三金属层实施第四光罩制程来形成的，其中，所述源极和所述漏极均与所述第二金属层对应，所述电极层的所述第一电极部和所述第二电极部均与所述第三金属层对应。
在上述薄膜晶体管阵列面板中，所述蚀刻阻挡层上还设置有容置坑槽，所述容置坑槽用于容置所述源极的至少一部分、所述漏极的至少一部分和所述电极层的至少一部分。
在上述薄膜晶体管阵列面板中，所述容置坑槽是通过对所述蚀刻阻挡材料实施所述第三光罩制程来形成的。
在上述薄膜晶体管阵列面板中，所述半导体层包括铟镓锌氧化物。
在上述薄膜晶体管阵列面板中，所述蚀刻阻挡层用于保护所述半导体层，以防止水蒸气或氧气影响所述铟镓锌氧化物的电性稳定性。
一种上述薄膜晶体管阵列面板的制作方法，所述方法包括以下步骤：A、在所述基板上设置第一金属层，并对所述第一金属层实施第一光罩制程，以形成所述栅极；B、在所述基板和所述栅极上设置所述绝缘层；C、在所述绝缘层上设置半导体材料，并对所述半导体材料实施第二光罩制程，以形成所述半导体层；D、在所述绝缘层和所述半导体层上设置蚀刻阻挡材料，并对所述蚀刻阻挡材料实施第三光罩制程，以形成所述第一通孔和所述第二通孔；E、在所述蚀刻阻挡层上、所述第一通孔内、所述第二通孔内设置第二金属层，然后在所述第二金属层上设置第三金属层，并对所述第二金属层和所述第三金属层实施第四光罩制程，以形成所述源极、所述漏极和所述电极层，其中，所述源极和所述漏极均与所述第二金属层对应，所述电极层的所述第一电极部和所述第二电极部均与所述第三金属层对应。
在上述薄膜晶体管阵列面板的制作方法中，所述蚀刻阻挡层上还设置有容置坑槽，所述容置坑槽用于容置所述源极的至少一部分、所述漏极的至少一部分和所述电极层的至少一部分。
在上述薄膜晶体管阵列面板的制作方法中，所述步骤D为：在所述绝缘层和所述半导体层上设置蚀刻阻挡材料，并对所述蚀刻阻挡材料实施第三光罩制程，以形成所述第一通孔、所述第二通孔和所述容置坑槽。
在上述薄膜晶体管阵列面板的制作方法中，所述半导体层包括铟镓锌氧化物；所述蚀刻阻挡层用于保护所述半导体层，以防止水蒸气或氧气影响所述铟镓锌氧化物的电性稳定性。
相对现有技术，本发明能简化薄膜晶体管阵列面板的制作工艺，节省制作成本。
为让本发明的上述内容能更明显易懂，下文特举优选实施例，并配合所附图式，作详细说明如下。
【附图说明】
图1至图5为本发明的薄膜晶体管阵列面板的制作方法的示意图；
图6为本发明的薄膜晶体管阵列面板的制作方法的流程图。
【具体实施方式】
本说明书所使用的词语“实施例”意指实例、示例或例证。此外，本说明书和所附权利要求中所使用的冠词“一”一般地可以被解释为“一个或多个”，除非另外指定或从上下文可以清楚确定单数形式。
本发明的薄膜晶体管阵列面板可以应用于显示面板中，所述显示面板可以是TFT-LCD(ThinFilmTransistorLiquidCrystalDisplay，薄膜晶体管液晶显示面板)、OLED(OrganicLightEmittingDiode，有机发光二极管显示面板)等。
本发明的薄膜晶体管阵列面板可以是用于所述薄膜晶体管液晶显示面板中的阵列面板，在这种情况下，所述薄膜晶体管阵列面板中的电极层中的第二电极部504可以是条状电极，所述薄膜晶体管阵列面板用于与液晶层、彩色滤光片阵列面板组成所述薄膜晶体管液晶显示面板。
本发明的薄膜晶体管阵列面板也可以是用于所述有机发光二极管显示面板中的阵列面板，在这种情况下，所述薄膜晶体管阵列面板中的电极层的第二电极部504可以是阴极层，所述薄膜晶体管阵列面板用于与有机发光材料层、阳极层组成所述有机发光二极管显示面板。
参考图5，本发明的薄膜晶体管阵列面板包括基板101、扫描线、薄膜晶体管、绝缘层201、蚀刻阻挡层401、数据线、电极层。
其中，所述扫描线、所述数据线均与所述薄膜晶体管连接，所述薄膜晶体管与所述电极层连接。
所述薄膜晶体管包括栅极102、半导体层301、源极501、漏极502。
所述绝缘层201设置在所述栅极102和所述基板101上。所述蚀刻阻挡层401设置于所述半导体层301及所述绝缘层201上。所述电极层包括第一电极部503和第二电极部504，所述第一电极部503设置于所述源极501上，所述第一电极部503用于对所述源极501进行覆盖和保护，所述第一电极部503与所述源极501接触，所述第二电极部504设置于所述漏极502上，所述第二电极部504用于对所述漏极502进行覆盖和保护，所述第二电极部504与所述漏极502接触。
所述半导体层301设置于所述绝缘层201上，所述蚀刻阻挡层401设置有第一通孔404和第二通孔405，所述源极501和所述漏极502分别通过所述第一通孔404和所述第二通孔405与所述半导体层301连接。
在本发明的薄膜晶体管阵列面板中，所述栅极102和所述扫描线是通过在所述基板101上设置第一金属层，并对所述金属层实施第一光罩制程来形成的。具体地，所述栅极102和所述扫描线均是通过对所述第一金属层实施所述第一光罩制程，并对所述第一金属层进行蚀刻来形成的。
所述半导体层301是通过在所述绝缘层201上设置半导体材料，并对所述半导体材料实施第二光罩制程来形成的。具体地，所述半导体层301是通过在所述半导体材料实施所述第二光罩制程，并对所述半导体材料进行蚀刻来形成的。
所述第一通孔404和所述第二通孔405是通过在所述绝缘层201和所述半导体层301上设置蚀刻阻挡材料，并对所述蚀刻阻挡材料实施第三光罩制程来形成的。所述蚀刻阻挡层401上还设置有容置坑槽(402、403)，所述容置坑槽(402、403)用于容置所述源极501的至少一部分、所述漏极502的至少一部分和所述电极层的至少一部分。所述容置坑槽(402、403)是通过对所述蚀刻阻挡材料实施所述第三光罩制程来形成的。即，所述第一通孔404、所述第二通孔405和所述容置坑槽(402、403)均是通过同一道光罩制程(所述第三光罩制程)来形成的。具体地，所述第一通孔404、所述第二通孔405和所述容置坑槽(402、403)均是通过对所述蚀刻阻挡材料实施所述第三光罩制程，并对所述蚀刻阻挡材料进行蚀刻来形成的。
所述源极501、所述漏极502、所述数据线和所述电极层是通过在所述蚀刻阻挡层401上、所述第一通孔404内、所述第二通孔405内设置第二金属层，然后在所述第二金属层上设置第三金属层，并对所述第二金属层和所述第三金属层实施第四光罩制程来形成的，其中，所述源极501、所述漏极502和所述数据线均与所述第二金属层对应，所述电极层的所述第一电极部503和所述第二电极部504均与所述第三金属层对应。在所述第四光罩制程之后，所述第二金属层和所述第三金属层均可同时采用双氧水系的铜酸来进行蚀刻。所述源极501与所述漏极502之间的沟道用于将所述源极501和所述漏极502分隔，以及用于将第一电极部503和所述第二电极部504分隔，即，所述沟道用于将由所述源极501和所述第一电极部503所组成的第一整体和由所述漏极502和所述第二电极部504所组成的第二整体分隔。所述沟通是对所述第二金属层和所述第三金属层实施所述第四光罩制程，并对所述第二金属层和所述第三金属层进行蚀刻来形成的。
通过上述技术方案，可以在所述薄膜晶体管阵列面板中节省保护层/钝化层，同时节省为制作所述保护层/所述钝化层所需要的一道光罩制程，此外，由于所述电极层和源极、所述漏极均在同一道光罩制程中形成，因此可以将两道光罩制程合成一道光罩制程，即，节约了一道光罩制程。即，上述技术方案有利于将为制作所述薄膜晶体管阵列面板所需的六道光罩制程节省(缩减)为四道光罩制程。
在本发明的薄膜晶体管阵列面板中，所述半导体层301包括铟镓锌氧化物。即，所述半导体材料是由所述铟镓锌氧化物组成的。所述半导体层301还可以包括非晶硅、低温多晶硅等。
在本发明的薄膜晶体管阵列面板中，所述蚀刻阻挡层401用于保护所述半导体层301，以防止水蒸气或氧气影响所述半导体层301(所述铟镓锌氧化物)的电性稳定性。
参考图1至图6，图1至图5为本发明的薄膜晶体管阵列面板的制作方法的示意图。图6为本发明的薄膜晶体管阵列面板的制作方法的流程图。
本发明的薄膜晶体管阵列面板的制作方法包括以下步骤：
A(步骤601)、在所述基板101上设置第一金属层，并对所述第一金属层实施第一光罩制程，以形成所述栅极102和所述扫描线。具体地，在所述基板101上设置所述第一金属层，对所述第一金属层实施所述第一光罩制程，并对所述第一金属层进行蚀刻，以形成所述栅极102和所述扫描线。
B(步骤602)、在所述基板101、所述栅极102和所述扫描线上设置所述绝缘层201。
C(步骤603)、在所述绝缘层201上设置半导体材料，并对所述半导体材料实施第二光罩制程，以形成所述半导体层301。具体地，在所述绝缘层201上设置所述半导体材料，对所述半导体材料实施第二光罩制程，并对所述半导体材料进行蚀刻，以形成所述半导体层301。
D(步骤604)、在所述绝缘层201和所述半导体层301上设置蚀刻阻挡材料，并对所述蚀刻阻挡材料实施第三光罩制程，以形成所述第一通孔404和所述第二通孔405。具体地，在所述绝缘层201和所述半导体层301上设置蚀刻阻挡材料，对所述蚀刻阻挡材料实施第三光罩制程，并对所述蚀刻阻挡材料进行蚀刻，以形成所述第一通孔404和所述第二通孔405。
E(步骤605)、在所述蚀刻阻挡层401上、所述第一通孔404内、所述第二通孔405内设置第二金属层，然后在所述第二金属层上设置第三金属层，并对所述第二金属层和所述第三金属层实施第四光罩制程，以形成所述源极501、所述漏极502、所述数据线和所述电极层，其中，所述源极501、所述漏极502和所述数据线均与所述第二金属层对应，所述电极层的所述第一电极部503和所述第二电极部504均与所述第三金属层对应。所述第一电极部503设置于所述源极501上，所述第一电极部503用于对所述源极501进行覆盖和保护，所述第一电极部503与所述源极501接触，所述第二电极部504设置于所述漏极502上，所述第二电极部504用于对所述漏极502进行覆盖和保护，所述第二电极部504与所述漏极502接触。
具体地，在所述蚀刻阻挡层401上、所述第一通孔404内、所述第二通孔405内设置所述第二金属层，然后在所述第二金属层上设置第三金属层，对所述第二金属层和所述第三金属层实施第四光罩制程，并对所述第二金属层和所述第三金属层进行蚀刻，以形成所述源极501、所述漏极502、所述数据线和所述电极层。其中，在所述第四光罩制程之后，采用双氧水系的铜酸来同时对所述第二金属层和所述第三金属层进行蚀刻。
作为一种改进，所述蚀刻阻挡层401上还设置有容置坑槽(402、403)，所述容置坑槽(402、403)用于容置所述源极501的至少一部分、所述漏极502的至少一部分和所述电极层的至少一部分。
在本发明的薄膜晶体管阵列面板的制作方法中，所述步骤D为：
在所述绝缘层201和所述半导体层301上设置蚀刻阻挡材料，并对所述蚀刻阻挡材料实施第三光罩制程，以形成所述第一通孔404、所述第二通孔405和所述容置坑槽(402、403)。
通过上述技术方案，可以在所述薄膜晶体管阵列面板中节省保护层/钝化层，同时节省为制作所述保护层/所述钝化层所需要的一道光罩制程，此外，由于所述电极层和源极、所述漏极均在同一道光罩制程中形成，因此可以将两道光罩制程合成一道光罩制程，即，节约了一道光罩制程。即，上述技术方案有利于将为制作所述薄膜晶体管阵列面板所需的六道光罩制程节省(缩减)为四道光罩制程。
在本发明的薄膜晶体管阵列面板的制作方法中，所述半导体层301包括铟镓锌氧化物。即，所述半导体材料是由所述铟镓锌氧化物组成的。所述半导体层301还可以包括非晶硅、低温多晶硅等。
所述蚀刻阻挡层401用于保护所述半导体层301，以防止水蒸气或氧气影响所述半导体层301(所述铟镓锌氧化物)的电性稳定性。
尽管已经相对于一个或多个实现方式示出并描述了本发明，但是本领域技术人员基于对本说明书和附图的阅读和理解将会想到等价变型和修改。本发明包括所有这样的修改和变型，并且仅由所附权利要求的范围限制。特别地关于由上述组件执行的各种功能，用于描述这样的组件的术语旨在对应于执行所述组件的指定功能(例如其在功能上是等价的)的任意组件(除非另外指示)，即使在结构上与执行本文所示的本说明书的示范性实现方式中的功能的公开结构不等同。此外，尽管本说明书的特定特征已经相对于若干实现方式中的仅一个被公开，但是这种特征可以与如可以对给定或特定应用而言是期望和有利的其他实现方式的一个或多个其他特征组合。而且，就术语“包括”、“具有”、“含有”或其变形被用在具体实施方式或权利要求中而言，这样的术语旨在以与术语“包含”相似的方式包括。
综上所述，虽然本发明已以优选实施例揭露如上，但上述优选实施例并非用以限制本发明，本领域的普通技术人员，在不脱离本发明的精神和范围内，均可作各种更动与润饰，因此本发明的保护范围以权利要求界定的范围为准。

Claims (10)

1.一种薄膜晶体管阵列面板，其特征在于，所述薄膜晶体管阵列面板包括：
基板；
薄膜晶体管，所述薄膜晶体管包括：
栅极；
半导体层；
源极；以及
漏极；
绝缘层，所述绝缘层设置在所述栅极和所述基板上；
蚀刻阻挡层，所述蚀刻阻挡层设置于所述半导体层及所述绝缘层上；
电极层，所述电极层包括第一电极部和第二电极部，所述第一电极部设置于所述源极上，所述第一电极部用于对所述源极进行覆盖和保护，所述第二电极部设置于所述漏极上，所述第二电极部用于对所述漏极进行覆盖和保护；
其中，所述半导体层设置于所述绝缘层上，所述蚀刻阻挡层设置有第一通孔和第二通孔，所述源极和所述漏极分别通过所述第一通孔和所述第二通孔与所述半导体层连接。
2.根据权利要求1所述的薄膜晶体管阵列面板，其特征在于，所述栅极是通过在所述基板上设置第一金属层，并对所述金属层实施第一光罩制程来形成的；
所述半导体层是通过在所述绝缘层上设置半导体材料，并对所述半导体材料实施第二光罩制程来形成的；
所述第一通孔和所述第二通孔是通过在所述绝缘层和所述半导体层上设置蚀刻阻挡材料，并对所述蚀刻阻挡材料实施第三光罩制程来形成的；
所述源极、所述漏极和所述电极层是通过在所述蚀刻阻挡层上、所述第一通孔内、所述第二通孔内设置第二金属层，然后在所述第二金属层上设置第三金属层，并对所述第二金属层和所述第三金属层实施第四光罩制程来形成的，其中，所述源极和所述漏极均与所述第二金属层对应，所述电极层的所述第一电极部和所述第二电极部均与所述第三金属层对应。
3.根据权利要求2所述的薄膜晶体管阵列面板，其特征在于，所述蚀刻阻挡层上还设置有容置坑槽，所述容置坑槽用于容置所述源极的至少一部分、所述漏极的至少一部分和所述电极层的至少一部分。
4.根据权利要求3所述的薄膜晶体管阵列面板，其特征在于，所述容置坑槽是通过对所述蚀刻阻挡材料实施所述第三光罩制程来形成的。
5.根据权利要求1至4中任意一项所述的薄膜晶体管阵列面板，其特征在于，所述半导体层包括铟镓锌氧化物。
6.根据权利要求5所述的薄膜晶体管阵列面板，其特征在于，所述蚀刻阻挡层用于保护所述半导体层，以防止水蒸气或氧气影响所述铟镓锌氧化物的电性稳定性。
7.一种如权利要求1所述的薄膜晶体管阵列面板的制作方法，其特征在于，所述方法包括以下步骤：
A、在所述基板上设置第一金属层，并对所述第一金属层实施第一光罩制程，以形成所述栅极；
B、在所述基板和所述栅极上设置所述绝缘层；
C、在所述绝缘层上设置半导体材料，并对所述半导体材料实施第二光罩制程，以形成所述半导体层；
D、在所述绝缘层和所述半导体层上设置蚀刻阻挡材料，并对所述蚀刻阻挡材料实施第三光罩制程，以形成所述第一通孔和所述第二通孔；
E、在所述蚀刻阻挡层上、所述第一通孔内、所述第二通孔内设置第二金属层，然后在所述第二金属层上设置第三金属层，并对所述第二金属层和所述第三金属层实施第四光罩制程，以形成所述源极、所述漏极和所述电极层，其中，所述源极和所述漏极均与所述第二金属层对应，所述电极层的所述第一电极部和所述第二电极部均与所述第三金属层对应。
8.根据权利要求7所述的薄膜晶体管阵列面板的制作方法，其特征在于，所述蚀刻阻挡层上还设置有容置坑槽，所述容置坑槽用于容置所述源极的至少一部分、所述漏极的至少一部分和所述电极层的至少一部分。
9.根据权利要求8所述的薄膜晶体管阵列面板的制作方法，其特征在于，所述步骤D为：
在所述绝缘层和所述半导体层上设置蚀刻阻挡材料，并对所述蚀刻阻挡材料实施第三光罩制程，以形成所述第一通孔、所述第二通孔和所述容置坑槽。
10.根据权利要求7至9中任意一项所述的薄膜晶体管阵列面板的制作方法，其特征在于，所述半导体层包括铟镓锌氧化物；
所述蚀刻阻挡层用于保护所述半导体层，以防止水蒸气或氧气影响所述铟镓锌氧化物的电性稳定性。
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