CN104867942B - Tft基板的制作方法及其结构 - Google Patents
Tft基板的制作方法及其结构 Download PDFInfo
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- CN104867942B CN104867942B CN201510213939.0A CN201510213939A CN104867942B CN 104867942 B CN104867942 B CN 104867942B CN 201510213939 A CN201510213939 A CN 201510213939A CN 104867942 B CN104867942 B CN 104867942B
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- 239000000758 substrate Substances 0.000 title claims abstract description 86
- 238000002360 preparation method Methods 0.000 title claims abstract description 29
- 238000000034 method Methods 0.000 claims abstract description 84
- 239000004065 semiconductor Substances 0.000 claims abstract description 65
- 239000012212 insulator Substances 0.000 claims abstract description 46
- 239000000463 material Substances 0.000 claims description 50
- 229920002120 photoresistant polymer Polymers 0.000 claims description 46
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 35
- 238000005530 etching Methods 0.000 claims description 26
- 238000002161 passivation Methods 0.000 claims description 24
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 18
- 230000004888 barrier function Effects 0.000 claims description 18
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 18
- 239000000377 silicon dioxide Substances 0.000 claims description 17
- 238000004380 ashing Methods 0.000 claims description 15
- 238000000151 deposition Methods 0.000 claims description 13
- 229910052751 metal Inorganic materials 0.000 claims description 12
- 239000002184 metal Substances 0.000 claims description 12
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 10
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims description 10
- 239000004411 aluminium Substances 0.000 claims description 10
- 229910052782 aluminium Inorganic materials 0.000 claims description 10
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 10
- 229910052802 copper Inorganic materials 0.000 claims description 10
- 239000010949 copper Substances 0.000 claims description 10
- 229910052750 molybdenum Inorganic materials 0.000 claims description 10
- 239000011733 molybdenum Substances 0.000 claims description 10
- 238000001039 wet etching Methods 0.000 claims description 9
- 229910044991 metal oxide Inorganic materials 0.000 claims description 8
- 150000004706 metal oxides Chemical class 0.000 claims description 8
- 230000008021 deposition Effects 0.000 claims description 7
- 238000000926 separation method Methods 0.000 claims description 7
- MUBZPKHOEPUJKR-UHFFFAOYSA-N Oxalic acid Chemical compound OC(=O)C(O)=O MUBZPKHOEPUJKR-UHFFFAOYSA-N 0.000 claims description 5
- 230000003628 erosive effect Effects 0.000 claims description 5
- 239000011521 glass Substances 0.000 claims description 5
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 2
- 239000004020 conductor Substances 0.000 claims description 2
- 229910052760 oxygen Inorganic materials 0.000 claims description 2
- 239000001301 oxygen Substances 0.000 claims description 2
- 229910003978 SiClx Inorganic materials 0.000 claims 1
- 230000015572 biosynthetic process Effects 0.000 claims 1
- 238000004519 manufacturing process Methods 0.000 abstract description 13
- 238000010276 construction Methods 0.000 abstract description 5
- 238000010586 diagram Methods 0.000 description 15
- 239000000460 chlorine Substances 0.000 description 8
- 229910018503 SF6 Inorganic materials 0.000 description 7
- 229920001621 AMOLED Polymers 0.000 description 5
- 238000005516 engineering process Methods 0.000 description 4
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 3
- MRNHPUHPBOKKQT-UHFFFAOYSA-N indium;tin;hydrate Chemical compound O.[In].[Sn] MRNHPUHPBOKKQT-UHFFFAOYSA-N 0.000 description 3
- SFZCNBIFKDRMGX-UHFFFAOYSA-N sulfur hexafluoride Chemical compound FS(F)(F)(F)(F)F SFZCNBIFKDRMGX-UHFFFAOYSA-N 0.000 description 3
- TXEYQDLBPFQVAA-UHFFFAOYSA-N tetrafluoromethane Chemical compound FC(F)(F)F TXEYQDLBPFQVAA-UHFFFAOYSA-N 0.000 description 3
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 2
- 229910052733 gallium Inorganic materials 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 description 2
- KZBUYRJDOAKODT-UHFFFAOYSA-N Chlorine Chemical compound ClCl KZBUYRJDOAKODT-UHFFFAOYSA-N 0.000 description 1
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 1
- 229910004205 SiNX Inorganic materials 0.000 description 1
- 229910052801 chlorine Inorganic materials 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000007772 electrode material Substances 0.000 description 1
- 238000005265 energy consumption Methods 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 235000006408 oxalic acid Nutrition 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 229960000909 sulfur hexafluoride Drugs 0.000 description 1
- 239000011787 zinc oxide Substances 0.000 description 1
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Abstract
本发明提供一种TFT基板的制作方法及其结构,该TFT基板的制作方法通过使用灰阶光罩,将栅极绝缘层、半导体层、及蚀刻阻挡层通过一道光刻制程一同制作,将光刻制程的次数由十道减少至八道,减少了光罩的使用量,简化了生产制程,有效提高了生产效率及良率。本发明的TFT基板结构,其中的栅极绝缘层、半导体层、及蚀刻阻挡层可使用灰阶光罩通过一道光刻制程一同制作,结构简单,易于制作,可有效提高生产效率及良率。
Description
技术领域
本发明涉及显示技术领域,尤其涉及一种TFT基板的制作方法及其结构。
背景技术
OLED(Organic Light-Emitting Diode)即有机发光二极管,具备自发光、高亮度、宽视角、高对比度、可挠曲、低能耗等特性,因此受到广泛的关注,并作为新一代的显示方式,已开始逐渐取代传统液晶显示器,被广泛应用在手机屏幕、电脑显示器、全彩电视等。OLED按照驱动类型可分为无源OLED(PMOLED,Passive matrix OLED)和有源OLED(AMOLED,Active-matrix OLED)。AMOLED常使用氧化物半导体型背板,其结构与低温多晶硅(LTPS,Low Temperature Poly-silicon)型背板相比更为简单。
请参阅图1,为一种现有的应用于AMOLED的TFT(薄膜晶体管,Thin FilmTransistor)基板结构的剖面示意图,包括基板100、设于所述基板100上的第一栅极210、及第二栅极220、设于所述第一栅极210、第二栅极220、及基板100上的栅极绝缘层300、位于所述第一栅极210上方设于所述栅极绝缘层300上的第一半导体层410、位于所述第二栅极220上方设于所述栅极绝缘层300上的第二半导体层420、设于所述第一半导体层410、第二半导体层420、及栅极绝缘层300上的蚀刻阻挡层500、位于所述第一栅极210上方设于所述蚀刻阻挡层500上的第一源极610、及第一漏极620、位于所述第二栅极220上方设于所述蚀刻阻挡层500上的第二源极630、及第二漏极640、设于所述第一源极610、第一漏极620、第二源极630、及第二漏极640、及蚀刻阻挡层500上的钝化层710、设于所述钝化层710上的平坦层720、设于所述平坦层720上的像素电极层800、设于所述像素电极层800与平坦层720上的像素定义层900、及设于所述像素定义层900上的光阻间隙物920。
所述蚀刻阻挡层500上对应所述第一半导体层410上方设有两个第一过孔510,所述蚀刻阻挡层500上对应所述第二半导体层420上方设有两个第二过孔520,所述蚀刻阻挡层500、及栅极绝缘层300上对应所述第二栅极220上方靠近第一栅极210的一侧设有第三过孔530,所述钝化层710、及平坦层720上对应所述第二源极630上方设有第四过孔810,所述像素定义层900上方对应所述像素电极层800上方设有第五过孔910。
所述第一源极610、第一漏极620分别经由所述第一过孔510与所述第一半导体层410相接触,所述第二源极630、第二漏极640分别经由所述第二过孔520与所述第二半导体层420相接触,所述第一源极610经由所述第三过孔530与所述第二栅极220相接触,所述像素电极层800经由所述第四过孔810与所述第二源极630相接触,所述第五过孔910暴露出部分像素电极层800。
其中,所述第一栅极210、及第二栅极220,栅极绝缘层300,第一半导体层410、及第二半导体层420,蚀刻阻挡层500,第一源极610、第一漏极620、第二源极630、及第二漏极640,钝化层710,平坦层720,像素电极层800,像素定义层900,光阻间隙物920中的每一层均需要通过一道光刻制程制作,即制作图1所示的TFT基板总计需要十道光刻制程,制程较为繁琐,影响生产效率及良率。
发明内容
本发明的目的在于提供一种TFT基板的制作方法,制程简单,可有效提高生产效率及良率。
本发明的目的还在于提供一种TFT基板结构,结构简单,易于制作,可有效提高生产效率及良率。
为实现上述目的,本发明提供一种TFT基板的制作方法,包括如下步骤:
步骤1、提供基板,所述基板上设有TFT区域与非TFT区域,在所述基板上沉积第一金属层,并通过第一道光刻制程图案化所述第一金属层,得到间隔设置的第一栅极与第二栅极;
步骤2、在所述第一栅极、第二栅极、及基板上依次沉积栅极绝缘层、半导体层、及蚀刻阻挡层;
步骤3、通过第二道光刻制程对所述栅极绝缘层、半导体层、及蚀刻阻挡层进行图案化处理,在所述蚀刻阻挡层上对应于所述第一栅极的上方形成第一接触孔与第二接触孔,对应于所述第二栅极的上方形成第三接触孔与第四接触孔;在所述蚀刻阻挡层、半导体层、及栅极绝缘层上对应于所述第二栅极上方靠近第一栅极的一侧形成第五接触孔;所述第一接触孔、第二接触孔、第三接触孔、第四接触孔、及第五接触孔均为通孔;
步骤4、在所述蚀刻阻挡层上沉积第二金属层,通过第三道光刻制程图案化该第二金属层,得到间隔设置的第一源极、第一漏极、第二源极、及第二漏极,所述第一源极、第一漏极、第二源极、及第二漏极分别经由所述第一接触孔、第二接触孔、第三接触孔、第四接触孔与所述半导体层相接触;
所述第一栅极、半导体层、第一源极、及第一漏极构成第一TFT;所述第二栅极、半导体层、第二源极、及第二漏极构成第二TFT;所述第一漏极经由第五接触孔与所述第二栅极相接触,将第一TFT与第二TFT串联起来;
步骤5、在所述第一源极、第一漏极、第二源极、第二漏极、蚀刻阻挡层、及基板上沉积钝化层,并通过第四道光刻制程对所述钝化层进行图案化,在所述钝化层上对应所述第二漏极的上方形成第六通孔;
步骤6、在所述钝化层上沉积平坦层,并通过第五道光刻制程对所述平坦层进行图案化,在所述平坦层上对应第六通孔的上方形成第七通孔;
步骤7、在所述平坦层上沉积像素电极层,并通过第六道光刻制程对其进行图案化,所述像素电极层经由所述第六通孔、及第七通孔与所述第二漏极相接触;
步骤8、在所述像素电极层、及平坦层上沉积像素定义层,并通过第七道光刻制程对其进行图案化,在所述像素定义层上形成对应于所述像素电极层上方的第八通孔,从而暴露出所述像素电极层的一部分;
步骤9、在所述像素定义层上沉积有机光阻层,并通过第八道光刻制程对其进行图案化,形成间隔设置的数个光阻间隙物。
所述步骤3具体包括:
步骤31、在所述蚀刻阻挡层上沉积光阻层,并通过一灰阶光罩对所述光阻层进行曝光、显影,使得光阻层上对应基板上非TFT区域的部分被完全蚀刻掉,且所述光阻层上对应所述第一栅极上方形成有间隔设置的第一凹槽与第二凹槽,对应所述第二栅极上方形成有间隔设置的第三凹槽与第四凹槽,对应所述第二栅极上方靠近第一栅极的一侧形成有第一通孔;
步骤32、以所述光阻层为遮挡,通过第一次干蚀刻制程对所述蚀刻阻挡层进行蚀刻,使得所述蚀刻阻挡层上对应基板上非TFT区域的部分被完全蚀刻掉,所述蚀刻阻挡层上对应于所述光阻层上的第一通孔的部分被完全蚀刻掉;
步骤33、通过一次灰化制程对所述光阻层进行灰化处理,使得所述光阻层的整体厚度降低,所述光阻层上的第一凹槽、第二凹槽、第三凹槽、及第四凹槽的底部被穿透,分别形成第二通孔、第三通孔、第四通孔、及第五通孔;
步骤34、以所述光阻层为遮挡,通过一次湿蚀刻制程对所述半导体层进行蚀刻,使得所述半导体层上对应基板上非TFT区域的部分被完全蚀刻掉,且所述半导体层上对应于所述光阻层上的第一通孔的部分被完全蚀刻掉;
步骤35、以所述光阻层为遮挡,通过第二次干蚀刻制程对所述蚀刻阻挡层、及栅极绝缘层进行蚀刻,使得所述蚀刻阻挡层上对应于所述光阻层上的第二通孔、第三通孔、第四通孔、及第五通孔的部分被完全蚀刻掉,从而在所述蚀刻阻挡层上形成对应于第一栅极上方的第一接触孔与第二接触孔,及对应于第二栅极上方的第三接触孔与第四接触孔;
同时,所述栅极绝缘层上对应基板上非TFT区域的部分被完全蚀刻掉,且所述栅极绝缘层上对应于所述光阻层上的第一通孔的部分被完全蚀刻掉,从而在所述蚀刻阻挡层、半导体层及栅极绝缘层上对应于所述第二栅极上方靠近第一栅极的一侧形成第五接触孔;
步骤36、剥离所述光阻层。
所述栅极绝缘层的材料为氧化硅或氮化硅,所述半导体层的材料为金属氧化物,所述蚀刻阻挡层的材料为氧化硅或氮化硅。
所述步骤32中第一次干蚀刻制程的具体工艺参数为:当所述蚀刻阻挡层的材料为氧化硅时,采用CF4+O2气氛进行干蚀刻,CF4流量为0~5000sccm,O2流量为0~5000sccm,蚀刻时间为1~1000s;当所述蚀刻阻挡层(5)的材料为氮化硅时,采用SF6+Cl2气氛进行干蚀刻,SF6流量为0~5000sccm,Cl2流量为0~5000sccm,蚀刻时间为1~1000s;
所述步骤33中灰化制程的具体工艺参数为:采用O2气氛进行光阻灰化,O2流量为0~5000sccm,灰化时间为1~1000s;
所述步骤34中湿蚀刻制程的具体工艺参数为:采用H2C2O4溶液进行湿蚀刻,所述H2C2O4溶液的浓度为0.1%~50%mol/L,蚀刻时间为1~1000s;
所述步骤35中第二次干蚀刻制程的具体工艺参数为:当所述蚀刻阻挡层与栅极绝缘层的材料均为氧化硅时,采用CF4+O2气氛进行干蚀刻,CF4流量为0~5000sccm,O2流量为0~5000sccm,蚀刻时间为1~1000s;当所述蚀刻阻挡层与栅极绝缘层的材料均为氮化硅时,采用SF6+Cl2气氛进行干蚀刻,SF6流量为0~5000sccm,Cl2流量为0~5000sccm,蚀刻时间为1~1000s。
所述基板为玻璃基板,所述第一栅极与第二栅极的材料为铜、铝、或钼,所述第一源极、第一漏极、第二源极、及第二漏极的材料为铜、铝、或钼。
本发明还提供一种TFT基板结构,包括基板、设于所述基板上且间隔设置的第一栅极、及第二栅极、设于所述第一栅极、第二栅极、及基板上的栅极绝缘层、设于所述栅极绝缘层上的半导体层、设于所述半导体层上的蚀刻阻挡层、设于所述蚀刻阻挡层上且间隔设置的第一源极、第一漏极、第二源极、及第二漏极、设于所述第一源极、第一漏极、第二源极、及第二漏极上覆盖所述基板的钝化层、设于所述钝化层上的平坦层、设于所述平坦层上的像素电极层、设于所述平坦层、及像素电极层上的像素定义层、及设于所述像素定义层上的光阻间隙物;
所述蚀刻阻挡层上设有对应于第一栅极上方的第一接触孔与第二接触孔,及对应于第二栅极上方的第三接触孔与第四接触孔;所述蚀刻阻挡层、半导体层、及栅极绝缘层上对应所述第二栅极上方靠近第一栅极的一侧设有第五接触孔;所述第一接触孔、第二接触孔、第三接触孔、第四接触孔、及第五接触孔均为通孔;
所述第一源极、第一漏极、第二源极、及第二漏极分别经由所述第一接触孔、第二接触孔、第三接触孔、第四接触孔与所述半导体层相接触;所述第一栅极、半导体层、第一源极、及第一漏极构成第一TFT;所述第二栅极、半导体层、第二源极、及第二漏极构成第二TFT;所述第一漏极经由第五接触孔与所述第二栅极相接触,将第一TFT与第二TFT串联起来;
所述钝化层上对应所述第二漏极的上方设有第六通孔,所述平坦层上对应所述第六通孔的上方设有第七通孔,所述像素电极层经由所述第六通孔、及第七通孔与所述第二漏极相接触;所述像素定义层上设有对应于所述像素电极层上方的第八通孔,所述第八通孔暴露出所述像素电极层的一部分。
所述栅极绝缘层、半导体层、及蚀刻阻挡层通过一道光刻制程制作而成。
所述第一TFT为开关TFT,所述第二TFT为驱动TFT。
所述基板为玻璃基板,所述第一栅极与第二栅极的材料为铜、铝、或钼,所述栅极绝缘层的材料为氧化硅或氮化硅,所述半导体层的材料为金属氧化物;所述半导体层的材料为金属氧化物。
所述蚀刻阻挡层的材料为氧化硅或氮化硅,所述第一源极、第一漏极、第二源极、及第二漏极的材料为铜、铝、或钼。
本发明的有益效果:本发明的TFT基板的制作方法,通过使用灰阶光罩,将栅极绝缘层、半导体层、及蚀刻阻挡层通过一道光刻制程一同制作,将光刻制程的次数由十道减少至八道,减少了光罩的使用量,简化了生产制程,有效提高了生产效率及良率。本发明的TFT基板结构,栅极绝缘层、半导体层、及蚀刻阻挡层可使用灰阶光罩通过一道光刻制程一同制作,结构简单,易于制作,可有效提高生产效率及良率。
为了能更进一步了解本发明的特征以及技术内容,请参阅以下有关本发明的详细说明与附图,然而附图仅提供参考与说明用,并非用来对本发明加以限制。
附图说明
下面结合附图,通过对本发明的具体实施方式详细描述,将使本发明的技术方案及其它有益效果显而易见。
附图中,
图1为一种现有的应用于AMOLED的TFT基板结构的剖面示意图;
图2为本发明的TFT基板的制作方法的步骤1的示意图;
图3为本发明的TFT基板的制作方法的步骤2的示意图;
图4-5为本发明的TFT基板的制作方法的步骤31的示意图;
图6为本发明的TFT基板的制作方法的步骤32的示意图;
图7为本发明的TFT基板的制作方法的步骤33的示意图;
图8为本发明的TFT基板的制作方法的步骤34的示意图;
图9为本发明的TFT基板的制作方法的步骤35的示意图;
图10为本发明的TFT基板的制作方法的步骤36的示意图;
图11为本发明的TFT基板的制作方法的步骤4的示意图;
图12为本发明的TFT基板的制作方法的步骤5的示意图;
图13为本发明的TFT基板的制作方法的步骤6的示意图;
图14为本发明的TFT基板的制作方法的步骤7的示意图;
图15为本发明的TFT基板的制作方法的步骤8的示意图;
图16为本发明的TFT基板的制作方法的步骤9的示意图暨本发明TFT基板结构的剖面示意图。
具体实施方式
为更进一步阐述本发明所采取的技术手段及其效果,以下结合本发明的优选实施例及其附图进行详细描述。
请参阅图2-14,本发明提供一种TFT基板的制作方法,包括如下步骤:
步骤1、如图2所示,提供基板1,所述基板1上设有TFT区域与非TFT区域,在所述基板1上沉积第一金属层,并通过第一道光刻制程图案化所述第一金属层,得到间隔设置的第一栅极21与第二栅极22。
具体的,所述基板1为玻璃基板。
所述第一栅极21与第二栅极22的材料为铜、铝、或钼。
步骤2、如图3所示,在所述第一栅极21、第二栅极22、及基板1上依次沉积栅极绝缘层3、半导体层4、及蚀刻阻挡层5。
具体的,所述栅极绝缘层3的材料为氧化硅(SiOx)或氮化硅(SiNx)。
所述半导体层4的材料为金属氧化物,优选的,所述金属氧化物为IGZO(铟镓锌氧化物)或IZO(氧化铟锌)。
所述蚀刻阻挡层5的材料为氧化硅或氮化硅。
步骤3、如图4-10所示,通过第二道光刻制程对所述栅极绝缘层3、半导体层4、及蚀刻阻挡层5进行图案化处理,在所述蚀刻阻挡层5上对应于所述第一栅极21的上方形成第一接触孔51与第二接触孔52,对应于所述第二栅极22的上方形成第三接触孔53与第四接触孔54;在所述蚀刻阻挡层5、半导体层4、及栅极绝缘层3上对应于所述第二栅极22上方靠近第一栅极21的一侧形成第五接触孔55;所述第一接触孔51、第二接触孔52、第三接触孔53、第四接触孔54、及第五接触孔55均为通孔。
具体的,所述步骤3包括以下步骤:
步骤31、如图4-5所示,在所述蚀刻阻挡层5上沉积光阻层6,并通过一灰阶光罩10对所述光阻层6进行曝光、显影,使得光阻层6上对应基板1上非TFT区域的部分被完全蚀刻掉,且所述光阻层6上对应所述第一栅极21上方形成有间隔设置的第一凹槽61与第二凹槽62,对应所述第二栅极22上方形成有间隔设置的第三凹槽63与第四凹槽64,对应所述第二栅极22上方靠近第一栅极21的一侧形成有第一通孔65;
步骤32、如图6所示,以所述光阻层6为遮蔽层,通过第一次干蚀刻制程对所述蚀刻阻挡层5进行蚀刻,使得所述蚀刻阻挡层5上对应基板1上非TFT区域的部分被完全蚀刻掉,所述蚀刻阻挡层5上对应于所述光阻层6上的第一通孔65的部分被完全蚀刻掉;
所述第一次干蚀刻制程的具体工艺参数为:
当所述蚀刻阻挡层5与栅极绝缘层3的材料均为氧化硅时,可采用CF4(四氟化碳)+O2(氧气)气氛进行干蚀刻,CF4流量为0~5000sccm,O2流量为0~5000sccm,蚀刻时间为1~1000s;
当所述蚀刻阻挡层5与栅极绝缘层3的材料均为氮化硅时,可采用SF6(六氟化硫)+Cl2(氯气)气氛进行干蚀刻,SF6流量为0~5000sccm,Cl2流量为0~5000sccm,蚀刻时间为1~1000s。
步骤33、如图7所示,通过一次灰化制程对所述光阻层6进行灰化处理,使得所述光阻层6的整体厚度降低,所述光阻层6上的第一凹槽61、第二凹槽62、第三凹槽63、及第四凹槽64的底部被穿透,分别形成第二通孔66、第三通孔67、第四通孔68、及第五通孔69;
所述灰化制程的具体工艺参数为:采用O2气氛进行光阻灰化,O2流量为0~5000sccm,灰化时间为1~1000s。
步骤34、如图8所示,以所述光阻层6为遮蔽层,通过一次湿蚀刻制程对所述半导体层4进行蚀刻,使得所述半导体层4上对应基板1上非TFT区域的部分被完全蚀刻掉,且所述半导体层4上对应于所述光阻层6上的第一通孔65的部分被完全蚀刻掉;
所述湿蚀刻制程的具体工艺参数为:采用H2C2O4(草酸)溶液进行湿蚀刻,所述H2C2O4溶液的浓度为0.1%~50%mol/L,蚀刻时间为1~1000s。
步骤35、如图9所示,以所述光阻层6为遮蔽层,通过第二次干蚀刻制程对所述蚀刻阻挡层5、及栅极绝缘层3进行蚀刻,使得所述蚀刻阻挡层5上对应于所述光阻层6上的第二通孔66、第三通孔67、第四通孔68、及第五通孔69的部分被完全蚀刻掉,从而在所述蚀刻阻挡层5上形成对应于第一栅极21上方的第一接触孔51与第二接触孔52,及对应于第二栅极22上方的第三接触孔53与第四接触孔54;
同时,所述栅极绝缘层3上对应基板1上非TFT区域的部分被完全蚀刻掉,且所述栅极绝缘层3上对应于所述光阻层6上的第一通孔65的部分被完全蚀刻掉,从而在所述蚀刻阻挡层5、半导体层4及栅极绝缘层3上对应于所述第二栅极22上方靠近第一栅极21的一侧形成第五接触孔55;
所述第二次干蚀刻制程的具体工艺参数为:
当所述蚀刻阻挡层5的材料为氧化硅时,可采用CF4+O2气氛进行干蚀刻,CF4流量为0~5000sccm,O2流量为0~5000sccm,蚀刻时间为1~1000s;
当所述蚀刻阻挡层5的材料为氮化硅时,可采用SF6+Cl2气氛进行干蚀刻,SF6流量为0~5000sccm,Cl2流量为0~5000sccm,蚀刻时间为1~1000s。步骤36、如图10所示,剥离所述光阻层6。
所述步骤3通过采用一灰阶光罩,将栅极绝缘层3、半导体层4、及蚀刻阻挡层5的图案通过一道光刻制程制作而成,减少了TFT基板的制作过程中光罩的使用量,简化了生产制程,可有效提高生产效率及良率。
步骤4、如图11所示,在所述蚀刻阻挡层5上沉积第二金属层,通过第三道光刻制程图案化该第二金属层,得到间隔设置的第一源极71、第一漏极72、第二源极73、及第二漏极74,所述第一源极71、第一漏极72、第二源极73、及第二漏极74分别经由所述第一接触孔51、第二接触孔52、第三接触孔53、第四接触孔54与所述半导体层4相接触;
所述第一栅极21、半导体层4、第一源极71、及第一漏极72构成第一TFT;所述第二栅极22、半导体层4、第二源极73、及第二漏极74构成第二TFT;所述第一漏极72经由第五接触孔55与所述第二栅极22相接触,将第一TFT与第二TFT串联起来。
具体的,所述第一源极71、第一漏极72、第二源极73、及第二漏极74的材料为铜、铝、或钼。
步骤5、如图12所示,在所述第一源极71、第一漏极72、第二源极73、第二漏极74、蚀刻阻挡层5、及基板1上沉积钝化层75,并通过第四道光刻制程对所述钝化层75进行图案化,在所述钝化层75上对应所述第二漏极74的上方形成第六通孔751。
具体的,所述钝化层75的材料为氮化硅或氧化硅。
步骤6、如图13所示,在所述钝化层75上沉积平坦层76,并通过第五道光刻制程对所述平坦层76进行图案化,在所述平坦层76上对应所述第六通孔751的上方形成第六通孔761。
具体的,所述平坦层76的材料为有机光阻。
步骤7、如图14所示,在所述平坦层76上沉积像素电极层8,并通过第六道光刻制程对其进行图案化,所述像素电极层8经由所述第六通孔751、及第七通孔761与所述第二漏极64相接触。
具体的,所述像素电极层8的材料为ITO(氧化铟锡)。
步骤8、如图15所示,在所述像素电极层8、及平坦层76上沉积像素定义层9,并通过第七道光刻制程对其进行图案化,在所述像素定义层9上形成对应于所述像素电极层8上方的第八通孔91,从而暴露出所述像素电极层8的一部分。
步骤9、如图16所示,在所述像素定义层9上沉积有机光阻层,并通过第八道光刻制程对其进行图案化,形成间隔设置的数个光阻间隙物92。
上述TFT基板的制作方法,通过使用灰阶光罩,将栅极绝缘层、半导体层、及蚀刻阻挡层通过一道光刻制程一同制作,将光刻制程的次数由十道减少至八道,简化了制程,有效提高了生产效率及良率。
请参阅图16,本发明还提供一种TFT基板结构,包括基板1、设于所述基板1上且间隔设置的第一栅极21、及第二栅极22、设于所述第一栅极21、第二栅极22、及基板1上的栅极绝缘层3、设于所述栅极绝缘层3上的半导体层4、设于所述半导体层4上的蚀刻阻挡层5、设于所述蚀刻阻挡层5上且间隔设置的第一源极71、第一漏极72、第二源极73、及第二漏极74、设于所述第一源极71、第一漏极72、第二源极73、及第二漏极74上覆盖所述基板1的钝化层75、设于所述钝化层75上的平坦层76、设于所述平坦层76上的像素电极层8、设于所述平坦层76、及像素电极层8上的像素定义层9、及设于所述像素定义层9上的光阻间隙物92。
所述蚀刻阻挡层5上设有对应于第一栅极21上方的第一接触孔51与第二接触孔52,及对应于第二栅极22上方的第三接触孔53与第四接触孔54;所述蚀刻阻挡层5、半导体层4、及栅极绝缘层3上对应所述第二栅极22的上方靠近第一栅极21的一侧设有第五接触孔55;所述第一接触孔51、第二接触孔52、第三接触孔53、第四接触孔54、及第五接触孔55均为通孔;
所述第一源极71、第一漏极72、第二源极73、及第二漏极74分别经由所述第一接触孔51、第二接触孔52、第三接触孔53、第四接触孔54与所述半导体层4相接触;所述第一栅极21、半导体层4、第一源极71、及第一漏极72构成第一TFT;所述第二栅极22、半导体层4、第二源极73、及第二漏极74构成第二TFT;所述第一漏极72经由第五接触孔55与所述第二栅极22相接触,将第一TFT与第二TFT串联起来;
所述钝化层75上对应所述第二漏极74的上方设有第六通孔751,所述平坦层76上对应第六通孔751的的上方设有第七通孔761,所述像素电极层8经由所述第六通孔751、及第七通孔761与所述第二漏极74相接触;所述像素定义层9上设有对应于所述像素电极层8上方的第八通孔91,所述第八通孔91暴露出所述像素电极层8的一部分。
具体的,所述栅极绝缘层3、半导体层4、及蚀刻阻挡层5通过一道光刻制程制作而成。
具体的,所述第一TFT为开关TFT,所述第二TFT为驱动TFT。
优选的,所述基板1为玻璃基板,所述第一栅极21与第二栅极22的材料为铜、铝、或钼,所述栅极绝缘层3的材料为氧化硅或氮化硅。
具体的,所述半导体层4的材料为金属氧化物,优选的,所述金属氧化物为IGZO(铟镓锌氧化物)或IZO(氧化铟锌)。
所述蚀刻阻挡层5的材料为氧化硅或氮化硅。
具体的,所述第一源极71、第一漏极72、第二源极73、及第二漏极74的材料为铜、铝、或钼。
具体的,所述钝化层75的材料为氮化硅或氧化硅。
具体的,所述平坦层76的材料为有机光阻。
所述像素电极层8的材料为ITO。
上述TFT基板结构,栅极绝缘层、半导体层、及蚀刻阻挡层可使用灰阶光罩通过一道光刻制程一同制作,结构简单,易于制作,可有效提高生产效率及良率。
综上所述,本发明的TFT基板的制作方法,通过使用灰阶光罩,将栅极绝缘层、半导体层、及蚀刻阻挡层通过一道光刻制程一同制作,将光刻制程的次数由十道减少至八道,减少了光罩的使用量,简化了生产制程,有效提高了生产效率及良率。本发明的TFT基板结构,其中的栅极绝缘层、半导体层、及蚀刻阻挡层可使用灰阶光罩通过一道光刻制程一同制作,结构简单,易于制作,可有效提高生产效率及良率。
以上所述,对于本领域的普通技术人员来说,可以根据本发明的技术方案和技术构思作出其他各种相应的改变和变形,而所有这些改变和变形都应属于本发明权利要求的保护范围。
Claims (4)
1.一种TFT基板的制作方法,其特征在于,包括如下步骤:
步骤1、提供基板(1),所述基板(1)上设有TFT区域与非TFT区域,在所述基板(1)上沉积第一金属层,并通过第一道光刻制程图案化所述第一金属层,得到间隔设置的第一栅极(21)与第二栅极(22);
步骤2、在所述第一栅极(21)、第二栅极(22)、及基板(1)上依次沉积栅极绝缘层(3)、半导体层(4)、及蚀刻阻挡层(5);
步骤3、通过第二道光刻制程对所述栅极绝缘层(3)、半导体层(4)、及蚀刻阻挡层(5)进行图案化处理,在所述蚀刻阻挡层(5)上对应于所述第一栅极(21)的上方形成第一接触孔(51)与第二接触孔(52),对应于所述第二栅极(22)的上方形成第三接触孔(53)与第四接触孔(54);在所述蚀刻阻挡层(5)、半导体层(4)、及栅极绝缘层(3)上对应于所述第二栅极(22)上方靠近第一栅极(21)的一侧形成第五接触孔(55);所述第一接触孔(51)、第二接触孔(52)、第三接触孔(53)、第四接触孔(54)、及第五接触孔(55)均为通孔;
步骤4、在所述蚀刻阻挡层(5)上沉积第二金属层,通过第三道光刻制程图案化该第二金属层,得到间隔设置的第一源极(71)、第一漏极(72)、第二源极(73)、及第二漏极(74),所述第一源极(71)、第一漏极(72)、第二源极(73)、及第二漏极(74)分别经由所述第一接触孔(51)、第二接触孔(52)、第三接触孔(53)、第四接触孔(54)与所述半导体层(4)相接触;
所述第一栅极(21)、半导体层(4)、第一源极(71)、及第一漏极(72)构成第一TFT;所述第二栅极(22)、半导体层(4)、第二源极(73)、及第二漏极(74)构成第二TFT;所述第一漏极(72)经由第五接触孔(55)与所述第二栅极(22)相接触,将第一TFT与第二TFT串联起来;
步骤5、在所述第一源极(71)、第一漏极(72)、第二源极(73)、第二漏极(74)、蚀刻阻挡层(5)、及基板(1)上沉积钝化层(75),并通过第四道光刻制程对所述钝化层(75)进行图案化,在所述钝化层(75)上对应所述第二漏极(74)的上方形成第六通孔(751);
步骤6、在所述钝化层(75)上沉积平坦层(76),并通过第五道光刻制程对所述平坦层(76)进行图案化,在所述平坦层(76)对应所述第六通孔(751)的上方形成第七通孔(761);
步骤7、在所述平坦层(76)上沉积像素电极层(8),并通过第六道光刻制程对其进行图案化,所述像素电极层(8)经由所述第六通孔(751)、及第七通孔(761)与所述第二漏极(74)相接触;
步骤8、在所述像素电极层(8)、及平坦层(76)上沉积像素定义层(9),并通过第七道光刻制程对其进行图案化,在所述像素定义层(9)上形成对应于所述像素电极层(8)上方的第八通孔(91),从而暴露出所述像素电极层(8)的一部分;
步骤9、在所述像素定义层(9)上沉积有机光阻层,并通过第八道光刻制程对其进行图案化,形成间隔设置的数个光阻间隙物(92);
所述步骤3具体包括:
步骤31、在所述蚀刻阻挡层(5)上沉积光阻层(6),并通过一灰阶光罩(10)对所述光阻层(6)进行曝光、显影,使得光阻层(6)上对应基板(1)上非TFT区域的部分被完全蚀刻掉,且所述光阻层(6)上对应所述第一栅极(21)上方形成有间隔设置的第一凹槽(61)与第二凹槽(62),对应所述第二栅极(22)上方形成有间隔设置的第三凹槽(63)与第四凹槽(64),对应所述第二栅极(22)上方靠近第一栅极(21)的一侧形成有第一通孔(65);
步骤32、以所述光阻层(6)为遮蔽层,通过第一次干蚀刻制程对所述蚀刻阻挡层(5)进行蚀刻,使得所述蚀刻阻挡层(5)上对应基板(1)上非TFT区域的部分被完全蚀刻掉,所述蚀刻阻挡层(5)上对应于所述光阻层(6)上的第一通孔(65)的部分被完全蚀刻掉;
步骤33、通过一次灰化制程对所述光阻层(6)进行灰化处理,使得所述光阻层(6)的整体厚度降低,所述光阻层(6)上的第一凹槽(61)、第二凹槽(62)、第三凹槽(63)、及第四凹槽(64)的底部被穿透,分别形成第二通孔(66)、第三通孔(67)、第四通孔(68)、及第五通孔(69);
步骤34、以所述光阻层(6)为遮蔽层,通过一次湿蚀刻制程对所述半导体层(4)进行蚀刻,使得所述半导体层(4)上对应基板(1)上非TFT区域的部分被完全蚀刻掉,且所述半导体层(4)上对应于所述光阻层(6)上的第一通孔(65)的部分被完全蚀刻掉;
步骤35、以所述光阻层(6)为遮蔽层,通过第二次干蚀刻制程对所述蚀刻阻挡层(5)、及栅极绝缘层(3)进行蚀刻,使得所述蚀刻阻挡层(5)上对应于所述光阻层(6)上的第二通孔(66)、第三通孔(67)、第四通孔(68)、及第五通孔(69)的部分被完全蚀刻掉,从而在所述蚀刻阻挡层(5)上形成对应于第一栅极(21)上方的第一接触孔(51)与第二接触孔(52),及对应于第二栅极(22)上方的第三接触孔(53)与第四接触孔(54);
同时,所述栅极绝缘层(3)上对应基板(1)上非TFT区域的部分被完全蚀刻掉,且所述栅极绝缘层(3)上对应于所述光阻层(6)上的第一通孔(65)的部分被完全蚀刻掉,从而在所述蚀刻阻挡层(5)、半导体层(4)及栅极绝缘层(3)上对应于所述第二栅极(22)上方靠近第一栅极(21)的一侧形成第五接触孔(55);
步骤36、剥离所述光阻层(6)。
2.如权利要求1所述的TFT基板的制作方法,其特征在于,所述栅极绝缘层(3)的材料为氧化硅或氮化硅,所述半导体层(4)的材料为金属氧化物,所述蚀刻阻挡层(5)的材料为氧化硅或氮化硅。
3.如权利要求2所述的TFT基板的制作方法,其特征在于,所述步骤32中第一次干蚀刻制程的具体工艺参数为:当所述蚀刻阻挡层(5)的材料为氧化硅时,采用CF4+O2气氛进行干蚀刻,CF4流量为0~5000sccm,O2流量为0~5000sccm,蚀刻时间为1~1000s;当所述蚀刻阻挡层(5)的材料为氮化硅时,采用SF6+Cl2气氛进行干蚀刻,SF6流量为0~5000sccm,Cl2流量为0~5000sccm,蚀刻时间为1~1000s;
所述步骤33中灰化制程的具体工艺参数为:采用O2气氛进行光阻灰化,O2流量为0~5000sccm,灰化时间为1~1000s;
所述步骤34中湿蚀刻制程的具体工艺参数为:采用H2C2O4溶液进行湿蚀刻,所述H2C2O4溶液的浓度为0.1%~50%mol/L,蚀刻时间为1~1000s;
所述步骤35中第二次干蚀刻制程的具体工艺参数为:当所述蚀刻阻挡层(5)与栅极绝缘层(3)的材料均为氧化硅时,采用CF4+O2气氛进行干蚀刻,CF4流量为0~5000sccm,O2流量为0~5000sccm,蚀刻时间为1~1000s;当所述蚀刻阻挡层(5)与栅极绝缘层(3)的材料均为氮化硅时,采用SF6+Cl2气氛进行干蚀刻,SF6流量为0~5000sccm,Cl2流量为0~5000sccm,蚀刻时间为1~1000s。
4.如权利要求1所述的TFT基板的制作方法,其特征在于,所述基板(1)为玻璃基板,所述第一栅极(21)与第二栅极(22)的材料为铜、铝、或钼,所述第一源极(71)、第一漏极(72)、第二源极(73)、及第二漏极(74)的材料为铜、铝、或钼。
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