CN100520995C - Mn-Zn系铁氧体材料 - Google Patents
Mn-Zn系铁氧体材料 Download PDFInfo
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- 239000000463 material Substances 0.000 title claims abstract description 45
- 229910000859 α-Fe Inorganic materials 0.000 title claims abstract description 42
- 239000000203 mixture Substances 0.000 claims abstract description 27
- 150000001768 cations Chemical class 0.000 claims abstract description 25
- 230000007547 defect Effects 0.000 claims abstract description 25
- 230000006866 deterioration Effects 0.000 claims description 46
- 238000006243 chemical reaction Methods 0.000 claims description 35
- 239000002245 particle Substances 0.000 claims description 23
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 16
- 239000004615 ingredient Substances 0.000 claims description 14
- 230000004907 flux Effects 0.000 claims description 8
- 230000005284 excitation Effects 0.000 claims description 6
- VTYYLEPIZMXCLO-UHFFFAOYSA-L Calcium carbonate Chemical compound [Ca+2].[O-]C([O-])=O VTYYLEPIZMXCLO-UHFFFAOYSA-L 0.000 abstract 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 2
- 239000000654 additive Substances 0.000 abstract 1
- 229910000019 calcium carbonate Inorganic materials 0.000 abstract 1
- 235000010216 calcium carbonate Nutrition 0.000 abstract 1
- 230000015556 catabolic process Effects 0.000 abstract 1
- UBEWDCMIDFGDOO-UHFFFAOYSA-N cobalt(II,III) oxide Inorganic materials [O-2].[O-2].[O-2].[O-2].[Co+2].[Co+3].[Co+3] UBEWDCMIDFGDOO-UHFFFAOYSA-N 0.000 abstract 1
- 229910052681 coesite Inorganic materials 0.000 abstract 1
- 239000000470 constituent Substances 0.000 abstract 1
- 229910052906 cristobalite Inorganic materials 0.000 abstract 1
- 238000006731 degradation reaction Methods 0.000 abstract 1
- JEIPFZHSYJVQDO-UHFFFAOYSA-N iron(III) oxide Inorganic materials O=[Fe]O[Fe]=O JEIPFZHSYJVQDO-UHFFFAOYSA-N 0.000 abstract 1
- 239000000377 silicon dioxide Substances 0.000 abstract 1
- 235000012239 silicon dioxide Nutrition 0.000 abstract 1
- 229910052682 stishovite Inorganic materials 0.000 abstract 1
- 229910052905 tridymite Inorganic materials 0.000 abstract 1
- XEEYBQQBJWHFJM-UHFFFAOYSA-N iron Substances [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 26
- 239000000843 powder Substances 0.000 description 16
- 239000011572 manganese Substances 0.000 description 11
- 230000000694 effects Effects 0.000 description 8
- 238000001354 calcination Methods 0.000 description 7
- 239000011162 core material Substances 0.000 description 6
- 239000002994 raw material Substances 0.000 description 6
- 230000008859 change Effects 0.000 description 5
- 238000002425 crystallisation Methods 0.000 description 5
- 230000008025 crystallization Effects 0.000 description 5
- 238000000034 method Methods 0.000 description 5
- 230000002159 abnormal effect Effects 0.000 description 4
- 238000004458 analytical method Methods 0.000 description 4
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 4
- 238000010304 firing Methods 0.000 description 4
- 229910052760 oxygen Inorganic materials 0.000 description 4
- 239000001301 oxygen Substances 0.000 description 4
- 238000002360 preparation method Methods 0.000 description 4
- 150000002500 ions Chemical class 0.000 description 3
- 238000010298 pulverizing process Methods 0.000 description 3
- 239000007921 spray Substances 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- 239000004372 Polyvinyl alcohol Substances 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 239000002131 composite material Substances 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 239000012467 final product Substances 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 238000005469 granulation Methods 0.000 description 2
- 230000003179 granulation Effects 0.000 description 2
- 239000011812 mixed powder Substances 0.000 description 2
- 229920002451 polyvinyl alcohol Polymers 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 238000005204 segregation Methods 0.000 description 2
- 238000004448 titration Methods 0.000 description 2
- 229910021380 Manganese Chloride Inorganic materials 0.000 description 1
- GLFNIEUTAYBVOC-UHFFFAOYSA-L Manganese chloride Chemical compound Cl[Mn]Cl GLFNIEUTAYBVOC-UHFFFAOYSA-L 0.000 description 1
- 229910018669 Mn—Co Inorganic materials 0.000 description 1
- 229910000831 Steel Inorganic materials 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- 239000011324 bead Substances 0.000 description 1
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- 150000001875 compounds Chemical class 0.000 description 1
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- 230000002349 favourable effect Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000010348 incorporation Methods 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- FBAFATDZDUQKNH-UHFFFAOYSA-M iron chloride Chemical compound [Cl-].[Fe] FBAFATDZDUQKNH-UHFFFAOYSA-M 0.000 description 1
- 239000000696 magnetic material Substances 0.000 description 1
- 230000014759 maintenance of location Effects 0.000 description 1
- 229910052748 manganese Inorganic materials 0.000 description 1
- 229940099607 manganese chloride Drugs 0.000 description 1
- 235000002867 manganese chloride Nutrition 0.000 description 1
- 239000011565 manganese chloride Substances 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 230000035699 permeability Effects 0.000 description 1
- 239000011435 rock Substances 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 230000006641 stabilisation Effects 0.000 description 1
- 238000011105 stabilization Methods 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 239000010959 steel Substances 0.000 description 1
- 238000005303 weighing Methods 0.000 description 1
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Abstract
本发明提供在1MHz以上的高频率区域中磁场劣化少的Mn-Zn系铁氧体材料。在该Mn-Zn系铁氧体材料中,作为主成分含有Fe2O3:53~56mol%,ZnO:7mol%以下(包括0mol%),剩余部分:MnO;作为副成分含有以Co3O4换算计为0.15~0.65wt%的Co,以SiO2换算计为0.01~0.045wt%的Si,以CaCO3换算计为0.05~0.40wt%的Ca,其中下述铁氧体组成式(1)中的表示阳离子缺陷量的δ值为3×10-3≤δ≤7×10-3,而且平均结晶粒径为大于8μm且不超过15μm,其中,a+b+c+d+e+f+g+h=3,δ=a+2b+c+(3/2)d+e+(3/2)f+g+(3/2)h-4,[g∶h=1∶2]。(Zna 2+,Tib 4+,Mnc 2+,Mnd 3+,Fee 2+,Fef 3+,Cog 2+,Coh 3+)3O4+δ组成式(1)。
Description
技术领域
本发明涉及在例如电源变压器等磁心中使用、且适合于在1MHz以上、特别是2MHz以上的高频率区域中使用的Mn-Zn系铁氧体材料。
背景技术
近年来,电气设备小型化的进展显著。与之相伴随,安装在各种电气设备中的电源也要求进一步的小型化。通常来说,在用正弦波驱动变压器时,磁通密度B表示为B=(Ep/4.44NpAf)×107。上述式中EP是施加电压[V],Np是一次侧绕线数,A是磁心截面积[cm2],f是驱动频率[Hz]。正如从上述式明显看出的那样,驱动频率的高频率化对变压器的小型化是有效的,因此,近年来要求能够在数MHz的高频率下耐用的高性能的磁心。
目前,作为在电源变压器等中使用最多的磁心材料,可列举出Mn-Zn系铁氧体材料。该材料在约100kHz的低频率区域中导磁率确实高,而且损耗(磁心损耗)低,满足了作为磁心材料的重要特性。但是该铁氧体材料在驱动频率高达数MHz的情况下损耗明显增大,驱动频率发生高频率化,并且近来难以供于使用。针对该问题,在特开平6-310320号公报(专利文献1)、特开平7-130527号公报(专利文献2)等中公开了一种磁性材料,其通过相对于Mn-Zn系铁氧体材料,含有各种氧化物作为添加成分,从而在300kHz~数MHz下表现出低损耗。与此相对,在特开平10-340807号公报(专利文献3)中以在高频率下的低损耗特性不足为由,提出了一种Mn-Co系铁氧体材料,其特征在于,含有Fe2O3:52~55mol%、CoO:0.4~1mol%,剩余部分实质上由MnO组成。
可是,对于这样的Mn-Zn系铁氧体材料,通常要求其损耗低,但根据具体的用途,有时比要求降低损耗,更要求磁场劣化少。
所谓磁场劣化是指,在1MHz以上的高频率区域中显著存在的现象,即若在烧结后施加磁场,则电力损耗增大,与此同时电感增大。据认为,该现象是由于通过施加的磁场而使得磁畴结构改变,从而感应磁场各向异性下降。
在开关电源的主变压器和扼流圈、或者电源用变压器等中,由于特别要求稳定性,所以希望尽可能抑制如上所述的磁场劣化。
[专利文献1]
特开平6-310320号公报
[专利文献2]
特开平7-130527号公报
[专利文献3]
特开平10-340807号公报
发明内容
本发明是基于如上所述的技术课题而提出的,其目的在于提供在1MHz以上的高频率区域中磁场劣化小的Mn-Zn系铁氧体材料。
本发明人等进行了专心研究,结果发现,要想抑制磁场劣化,调整Mn-Zn系铁氧体材料的阳离子缺陷量(δ,用下述组成式(1)定义)是有效的。
(Zna 2+,Tib 4+,Mnc 2+,Mnd 3+,Fee 2+,Fef 3+,Cog 2+,Coh 3+)3O4+δ组成式(1)
其中,a+b+c+d+e+f+g+h=3,
δ=a+2b+c+(3/2)d+e+(3/2)f+g+(3/2)h-4,[g:h=1:2]
根据本发明人等的研究发现,要想在1MHz以上、特别是2MHz以上的高频率区域中降低磁场劣化,将阳离子缺陷量δ设定在规定的范围内是有利的。本发明是基于该发现,提供了一种Mn-Zn系铁氧体材料,其特征在于,作为主成分含有Fe2O3:53~56mol%,ZnO:7mol%以下(包括0mol%),剩余部分:MnO;作为副成分含有以Co3O4换算计为0.15~0.65wt%的Co,以SiO2换算计为0.01~0.045wt%的Si,以CaCO3换算计为0.05~0.40wt%的Ca,其中上述铁氧体组成式(1)中的δ值(阳离子缺陷量)为3×10-3≤δ≤7×10-3。
另外,本发明人等还发现,在控制阳离子缺陷量δ的同时,将Mn-Zn系铁氧体材料的平均结晶粒径限制在某一范围内是重要的。即,本发明中的Mn-Zn系铁氧体材料的平均结晶粒径为大于8μm且不超过15μm。
本发明的Mn-Zn系铁氧体材料中,优选δ值为3×10-3≤δ<5×10-3。
此外,本发明的Mn-Zn系铁氧体材料优选的是,在从室温至125℃的温度范围内,在励磁磁通密度为50mT、测量频率为2MHz的条件下的电力损耗为3200[kW/m3]以下,而且磁场劣化率为100%以下。其中所谓的磁场劣化率是在励磁刚刚到达饱和磁通密度程度之后的电力损耗相对于励磁前的电力损耗的增加率,在将刚刚励磁后(磁场劣化后)的电力损耗设定为Pcvr,将励磁前的初期的电力损耗设定为Pcv时,用[Pcvr-Pcv]/[Pcv]×100[%]表示。
根据本发明,可以提供在1MHz以上的高频率区域,磁场劣化少的Mn-Zn系铁氧体材料,从而可以实现稳定性优异的变压器等。
附图说明
图1是表示阳离子缺陷量δ和磁场劣化率的关系的曲线图。
图2是表示平均结晶粒径和磁场劣化率的关系的曲线图。
图3是表示Fe2O3量和磁场劣化率的关系的曲线图。
图4是表示ZnO量和磁场劣化率的关系的曲线图。
图5是表示Co3O4量和磁场劣化率的关系的曲线图。
图6是表示SiO2量和磁场劣化率的关系的曲线图。
图7是表示CaCO3量和磁场劣化率的关系的曲线图。
具体实施方式
本发明的Mn-Zn系铁氧体材料如上所述,用组成式(1)表示的阳离子缺陷量δ满足3×10-3≤δ≤7×10-3的条件。在1MHz以上的高频率区域中,阳离子缺陷量δ低于3×10-3时,高温下的损耗Pcv变大。另外,阳离子缺陷量δ超过7×10-3时,磁场劣化率变大,从而损害了施加磁场时的稳定性。本发明中优选的阳离子缺陷量δ为3×10-3≤δ<5×10-3,更优选的阳离子缺陷量δ为3×10-3≤δ≤4.5×10-3。
阳离子缺陷量δ可以根据煅烧时氧分压PO2的不同而变化,提高氧分压PO2时,就会增加阳离子缺陷量δ。
另外,本发明的Mn-Zn系铁氧体材料的粒径(平均结晶粒径)D满足大于8μm且不超过15μm的条件。在1MHz以上的高频率区域中,结晶粒径D为8μm以下时,磁场劣化率变大,从而损害了施加磁场时的稳定性。此外,结晶粒径D大于15μm时,在高温下的损耗Pcv变大。本发明中优选的结晶粒径D为12μm≤D≤15μm,更优选的结晶粒径D为13μm≤D≤15μm。
下面,对本发明的Mn-Zn系铁氧体材料的组成限定理由进行详述。
Fe2O3:53~56mol%
Fe2O3是作为本发明的Mn-Zn系铁氧体材料的主成分的必需构成,其量无论是过少,还是过多,均会导致高温下的损耗Pcv变大。因此,本发明中将Fe2O3量规定为53~56mol%。优选的Fe2O3量为53~55mol%,更优选的Fe2O3量为53~54mol%。
ZnO:7mol%以下(包括0mol%)
ZnO也是作为本发明的Mn-Zn系铁氧体材料的主成分。可以根据ZnO的量控制Mn-Zn系铁氧体材料的频率特性。即,ZnO量越少,在高频率区域的损耗Pcv越小。ZnO超过7mol%时,由于在2MHz以上的高频率区域的损耗Pcv劣化,所以将ZnO的上限规定为7mol%。另外,ZnO量低于2mol%时,磁场劣化率变大,从而损害了施加磁场时的稳定性。因此,优选的ZnO量为2~7mol%,更优选的ZnO量为5~7mol%。
本发明的Mn-Zn系铁氧体材料中,作为主成分,除了Fe2O3和ZnO之外,还含有Mn氧化物作为剩余部分。作为Mn氧化物,可以使用MnO、Mn3O4。
本发明的Mn-Zn系铁氧体材料除了上述主成分之外,还含有以下的副成分。通过将这些副成分进行最优化,可控制高频率区域中的损耗的降低和损耗的温度特性。
Co:以Co3O4换算计为0.15~0.65wt%(1500~6500ppm)
Co量过少时,由于不能充分获得损耗Pcv的降低效果,所以将下限规定为以Co3O4换算计为0.15wt%。另外,增大Co量时,磁场劣化率增大。因此,将Co规定为以Co3O4换算计为0.65wt%以下。优选的Co量以Co3O4换算计为0.15~0.50wt%,更优选的Co量以Co3O4换算计为0.15~0.30wt%。
Si:以SiO2换算计为0.01~0.045wt%
Si具有在结晶晶界偏析而使晶界电阻增大并使电流损耗降低的效果。根据该效果,可获得使高频率区域中的损耗降低的效果。为了获得该效果,添加以SiO2换算计为0.01wt%以上的Si。但是,添加过量的Si会诱发异常晶粒长大。因此,将Si规定为以SiO2换算计为0.045wt%以下。优选的Si量以SiO2换算计为0.01~0.03wt%,更优选的Si量以SiO2换算计为0.01~0.02wt%。
Ca:以CaCO3换算计为0.05~0.40wt%
Ca具有在结晶晶界偏析而使晶界电阻增大并使电流损耗降低的效果、以及抑制异常晶粒长大的效果。为了获得该效果,添加以CaCO3换算计为0.05wt%以上的Ca。但是,添加过量的Ca会增大高频率区域中的损耗,所以将Ca规定为以CaCO3换算计为0.40wt%以下。优选的Ca量以CaCO3换算计为0.10~0.30wt%,更优选的Ca量以CaCO3换算计为0.10~0.20wt%。
下面,对制备本发明Mn-Zn系铁氧体材料的优选方法进行说明。
使用氧化物或者通过加热变为氧化物的化合物粉末作为主成分的原料。具体地讲,可以使用Fe2O3粉末、Mn3O4粉末、ZnO粉末等。制备的各原料粉末的平均粒径可以在0.1~3μm范围内适当选择。
将主成分的原料粉末进行湿式混合后,进行煅烧。煅烧的温度为800~1000℃,另外在气氛气体为N2~大气间进行即可。煅烧的稳定时间可以在0.5~5小时的范围内适当选择。煅烧后,将煅烧体粉碎成例如平均粒径为约0.5~2μm。此外,并不限于上述主成分的原料,也可以将含有二种以上金属的复合氧化物粉末作为主成分的原料。例如,将含有氯化铁、氯化锰的水溶液进行氧化焙烧,获得含有Fe、Mn的复合氧化物粉末。也可以将该粉末和ZnO粉末混合作为主成分原料。这种情况下,不需要煅烧。
本发明的Mn-Zn系铁氧体材料中,除了主成分之外,还添加上述的副成分。将这些副成分的原料粉末与煅烧后被粉碎的主成分的粉末混合。但是,也可以与主成分的原料粉末混合后,与主成分一起进行煅烧。
为了顺利地进行以后的成形工序,可以将由主成分和副成分组成的混合粉末造粒为颗粒。造粒可以使用例如喷雾式干燥机进行。在混合粉末中少量添加适当的粘合剂,例如聚乙烯醇(PVA),将其用喷雾式干燥机进行喷雾、干燥。得到的颗粒粒径优选为约80~200μm。
将得到的颗粒使用具有规定形状的模具的模压机成形为所希望的形状,并将该成形体供给烧成工序。烧成是在1050~1350℃的温度范围内保持约2~10小时。通过调整该烧成气氛气体、特别是稳定温度下的氧分压PO2,可以使阳离子缺陷量δ或者Fe2+/Fe变动。也可根据主成分的组成、烧成温度而进行变化,为了将阳离子缺陷量δ规定为3×10-3≤δ≤7×10-3,将稳定温度下的氧分压PO2规定为约0.1~3%即可。
另外,可以通过调整稳定温度,使Mn-Zn系铁氧体材料的平均结晶粒径变动。若提高稳定温度,则晶粒长大,从而可以增大平均结晶粒径。另外,即使是相同的稳定温度,也可以通过减少SiO2、CaCO3量,促进晶粒长大,由此也可以进行平均结晶粒径的调整。
根据满足如上所述条件的Mn-Zn系铁氧体材料,可以实现在从室温至125℃的温度范围内,在励磁磁通密度为50mT、测量频率为2MHz的条件下的电力损耗为3200[kW/m3]以下、进一步为3000[kW/m3]以下,而且磁场劣化率为100%以下的磁场劣化少的材料。
[实施例1]
制备Fe2O3粉末、ZnO粉末和MnO粉末作为主成分的原料,并制备Co3O4粉末、SiO2粉末、CaCO3粉末作为副成分的原料,按照表1中所示的组成进行称量。下面按照下述的制备条件和表1中所示的烧成条件(保持时间为6小时)制作圆环形状的Mn-Zn系铁氧体烧结体(磁心)。
混合和粉碎用罐:使用不锈钢球磨罐
混合和粉碎用介质:使用钢球
混合时间:16小时
煅烧温度和时间:850℃、3小时
粉碎时间:16小时
成形:成形体密度为3g/cm3
试样尺寸:T10形状(外径为20mm、内径为10mm、高为5mm的圆环形状)
[阳离子缺陷量δ]
对由以上得到的烧结体用以下方法根据上述组成式(1)求出阳离子缺陷量δ。
即,δ值的计算是根据组成分析、和Fe2+和Mn2+的定量进行的。对于组成分析来说,将上述烧结体粉碎,形成粉末状后,用使用荧光X射线分析装置(リガク(株)制,サイマルティック3530)的玻璃珠粒法进行测量。Fe2+和Mn2+的定量为将上述烧结体粉碎、形成粉末状,溶解于酸后,用K2Cr2O7溶液进行电位差滴定而加以定量的。此外,对于Zn2+、Ti4+、Co2+、3+来说,假设由组成分析得到的Zn都是二价的离子,Ti都是四价的离子,Co是二价和三价以1比2的比例存在的离子。另外,Fe3+、Mn2+量为由通过组成分析得到的Fe、Mn量分别扣除由上述电位差滴定求出的Fe2+、Mn3+量的值。
[初期损耗(Pcv)]
在由以上得到的圆环形状的烧结体上在一次侧和二次侧一共卷绕3匝铜线导线,使用B-H分析器(岩崎通信机器(株)制SY-8217)测量初期损耗(Pcv)。另外,将励磁磁通密度(Bm)规定为25~125mT,将测量频率(f)规定为2MHz。此外,使用恒温槽进行测量。
[磁场劣化后损耗(Pcvr)]
接着,使卷绕在上述烧结体上的铜线导线流过500A/m的直流电流,并对烧结体施加直流磁场。
在这样地产生磁场劣化后,与上述相同地测量磁场劣化后的损耗(以下称为磁场劣化后损耗)(Pcvr)。
然后,用[磁场劣化后损耗(Pcvr)—初期损耗(Pcv)]/[初期损耗
(Pcv)]这样的公式计算磁场劣化率。
表1、图1中示出了阳离子缺陷量δ、初期损耗(Pcv)、磁场劣化后损耗(Pcvr)的结果。另外,图1表示将励磁磁通密度(Bm)规定为50mT时,125℃下的磁场劣化率。
表1
如表1和图1中所示,存在阳离子缺陷量δ越大,损耗Pcv变得越小的趋势。与此相对,阳离子缺陷量δ越大,磁场劣化率变得越大。于是,通过规定本发明的阳离子缺陷量δ,可以较低地抑制磁场劣化率。由这些结果可知,优选的阳离子缺陷量δ为3×10-3≤δ<7×10-3,更优选的阳离子缺陷量δ为3×10-3≤δ<5×10-3,进一步优选的阳离子缺陷量δ为3×10-3≤δ≤4.5×10-3。
[实施例2]
除了将烧结体的平均结晶粒径规定为表2中所示的粒径以外,按照与实施例1相同的步骤制作烧结体。对该烧结体按照与实施例1相同的步骤进行测量。其结果如表2和图2所示。
另外,图2表示平均结晶粒径和125℃下的磁场劣化率的关系。由表2和图2可知,平均结晶粒径为8μm以下时,磁场劣化率变大。另外,平均结晶粒径大于15μm时,高温下的损耗Pcv变大。由这些结果可知,优选的平均结晶粒径为大于8μm,且不超过15μm,更优选的平均结晶粒径为12~15μm,进一步优选的平均结晶粒径为13~15μm。
表2
[实施例3]
除了将主成分、副成分的组成设定为表3中所示的组成外,按照与实施例1相同的步骤制作烧结体。对该烧结体按照与实施例1相同的步骤进行测量。其结果如表3所示。另外,图3中示出了Fe2O3量和125℃下的磁场劣化率的关系。由表3和图3可知,Fe2O3量低于53mol%或超过56mol%时,损耗Pcv增大。优选的Fe2O3量为53~56mol%,更优选的Fe2O3量为53~55mol%,进一步优选的Fe2O3量为53~54mol%。
表3
[实施例4]
除了将主成分、副成分的组成设定为表4中所示的组成外,按照与实施例1相同的步骤制作烧结体。对该烧结体按照与实施例1相同的步骤进行测量。其结果如表4所示。另外,图4中示出了ZnO量和125℃下的磁场劣化率的关系。由表4和图4可知,ZnO量增多时,高温下的损耗Pcv增大。为了使损耗Pcv(125℃、2MHz、50mT)为3000kW/m3以下,需要将ZnO规定为7mol%以下。此外,ZnO量减少时,磁场劣化率增大。为了降低磁场劣化率,优选使ZnO为2~7mol%,更优选为5~7mol%。
表4
[实施例5]
除了将主成分、副成分的组成设定为表5中所示的组成外,按照与实施例1相同的步骤制作烧结体。对该烧结体按照与实施例1相同的步骤进行测量。其结果如表5所示。另外,图5中示出了Co3O4量和125℃下的磁场劣化率的关系。由表5和图5所示的结果可知,通过添加Co3O4,可以降低损耗Pcv,但是增大Co量时,磁场劣化率增大。因此,将Co规定为以Co3O4换算计为0.65wt%以下。优选的Co量以Co3O4换算计为0.15~0.50wt%,更优选的Co量以Co3O4换算计为0.15~0.30wt%。
表5
[实施例6]
除了将主成分、副成分的组成设定为表6中所示的组成外,按照与实施例1相同的步骤制作烧结体。对该烧结体按照与实施例1相同的步骤进行测量。其结果如表6所示。另外,图6中示出了SiO2量和125℃下的磁场劣化率的关系。由表6和图6所示的结果可知,通过添加SiO2,可以降低损耗Pcv,但是过度增大Si量时,产生异常晶粒长大。因此,将Si规定为以SiO2换算计为0.045wt%以下。优选的Si量以SiO2换算计为0.01~0.03wt%,更优选的Si量以SiO2换算计为0.01~0.02wt%。
表6
[实施例7]
除了将主成分、副成分的组成设定为表7中所示的组成外,按照与实施例1相同的步骤制作烧结体。对该烧结体按照与实施例1相同的步骤进行测量。其结果如表7所示。另外,图7中示出了CaCO3量和磁场劣化率的关系。由表7和图7所示的结果可知,通过添加CaCO3,可以降低125℃下的磁场劣化率。通过将CaCO3量规定为0.05~0.40wt%,可以使125℃、2MHz下的损耗Pvc为3200kW/m3以下。
另外,过量地降低CaCO3时,产生异常晶粒长大,因此优选的Ca量以CaCO3换算计为0.10~0.30wt%,更优选的Ca量以CaCO3换算计为0.10~0.20wt%。
表7
Claims (9)
1.一种Mn-Zn系铁氧体材料,其特征在于,作为主成分含有Fe2O3:53~56mol%,ZnO:2~7mol%,剩余部分:MnO;作为副成分含有以Co3O4换算计为0.15~0.65wt%的Co,以SiO2换算计为0.01~0.045wt%的Si,以CaCO3换算计为0.05~0.40wt%的Ca,其中下述铁氧体组成式(1)中的表示阳离子缺陷量的δ值为3×10-3≤δ≤7×10-3,而且平均结晶粒径为大于8μm且不超过15μm,
(Zna 2+,Tib 4+,Mnc 2+,Mnd 3+,Fee 2+,Fef 3+,Cog 2+,Coh 3+)3O4+δ组成式(1)
其中,a+b+c+d+e+f+g+h=3,
δ=a+2b+c+(3/2)d+e+(3/2)f+g+(3/2)h-4,其中,g:h=1:2。
2.根据权利要求1记载的Mn-Zn系铁氧体材料,其特征在于,所述δ值为3×10-3≤δ<5×10-3。
3.根据权利要求1记载的Mn-Zn系铁氧体材料,其特征在于,所述δ值为3×10-3≤δ≤4.5×10-3。
4.根据权利要求1或2记载的Mn-Zn系铁氧体材料,其特征在于,在从室温至125℃的温度范围内,在励磁磁通密度为50mT、测量频率为2MHz的条件下的电力损耗为3200kW/m3以下,而且在励磁刚刚达到饱和磁通密度程度之后的电力损耗相对于励磁前的电力损耗的增加率即磁场劣化率为100%以下。
5.根据权利要求1记载的Mn-Zn系铁氧体材料,其特征在于,含有以Co3O4换算计为0.15~0.50wt%的Co。
6.根据权利要求1记载的Mn-Zn系铁氧体材料,其特征在于,含有以SiO2换算计为0.01~0.03wt%的Si。
7.根据权利要求1记载的Mn-Zn系铁氧体材料,其特征在于,含有以CaCO3换算计为0.10~0.30wt%的Ca。
8.根据权利要求1记载的Mn-Zn系铁氧体材料,其特征在于,含有以Co3O4换算计为0.15~0.30wt%的Co,以SiO2换算计为0.01~0.02wt%的Si,以CaCO3换算计为0.1~0.2wt%的Ca。
9.根据权利要求8记载的Mn-Zn系铁氧体材料,其特征在于,所述δ值为3×10-3≤δ<5×10-3。
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