CN100514687C - 带有荧光变换元件的辐射半导体组件 - Google Patents

带有荧光变换元件的辐射半导体组件 Download PDF

Info

Publication number
CN100514687C
CN100514687C CNB2006101517044A CN200610151704A CN100514687C CN 100514687 C CN100514687 C CN 100514687C CN B2006101517044 A CNB2006101517044 A CN B2006101517044A CN 200610151704 A CN200610151704 A CN 200610151704A CN 100514687 C CN100514687 C CN 100514687C
Authority
CN
China
Prior art keywords
radiation
semiconductor
semiconductor component
conversion element
recess
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CNB2006101517044A
Other languages
English (en)
Chinese (zh)
Other versions
CN1917244A (zh
Inventor
H·布伦纳
A·德布雷
H·耶格
G·维特尔
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Ams Osram International GmbH
Original Assignee
Osram Opto Semiconductors GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Family has litigation
First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=7640000&utm_source=google_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=CN100514687(C) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Application filed by Osram Opto Semiconductors GmbH filed Critical Osram Opto Semiconductors GmbH
Publication of CN1917244A publication Critical patent/CN1917244A/zh
Application granted granted Critical
Publication of CN100514687C publication Critical patent/CN100514687C/zh
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/8506—Containers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/851—Wavelength conversion means
    • H10H20/8514—Wavelength conversion means characterised by their shape, e.g. plate or foil
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H01L2224/4847—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond
    • H01L2224/48471—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond the other connecting portion not on the bonding area being a ball bond, i.e. wedge-to-ball, reverse stitch
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/85909—Post-treatment of the connector or wire bonding area
    • H01L2224/8592—Applying permanent coating, e.g. protective coating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/12—Passive devices, e.g. 2 terminal devices
    • H01L2924/1204—Optical Diode
    • H01L2924/12041—LED
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/036—Manufacture or treatment of packages
    • H10H20/0361—Manufacture or treatment of packages of wavelength conversion means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/855—Optical field-shaping means, e.g. lenses
    • H10H20/856—Reflecting means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/857—Interconnections, e.g. lead-frames, bond wires or solder balls

Landscapes

  • Led Device Packages (AREA)
CNB2006101517044A 2000-04-26 2001-04-26 带有荧光变换元件的辐射半导体组件 Expired - Fee Related CN100514687C (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE10020465A DE10020465A1 (de) 2000-04-26 2000-04-26 Strahlungsemittierendes Halbleiterbauelement mit Lumineszenzkonversionselement
DE10020465.1 2000-04-26

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
CNB018087299A Division CN1284249C (zh) 2000-04-26 2001-04-26 带有荧光变换元件的辐射半导体组件及其生产方法

Publications (2)

Publication Number Publication Date
CN1917244A CN1917244A (zh) 2007-02-21
CN100514687C true CN100514687C (zh) 2009-07-15

Family

ID=7640000

Family Applications (2)

Application Number Title Priority Date Filing Date
CNB2006101517044A Expired - Fee Related CN100514687C (zh) 2000-04-26 2001-04-26 带有荧光变换元件的辐射半导体组件
CNB018087299A Expired - Fee Related CN1284249C (zh) 2000-04-26 2001-04-26 带有荧光变换元件的辐射半导体组件及其生产方法

Family Applications After (1)

Application Number Title Priority Date Filing Date
CNB018087299A Expired - Fee Related CN1284249C (zh) 2000-04-26 2001-04-26 带有荧光变换元件的辐射半导体组件及其生产方法

Country Status (7)

Country Link
US (3) US6897490B2 (enExample)
EP (2) EP2485285A3 (enExample)
JP (2) JP5100944B2 (enExample)
CN (2) CN100514687C (enExample)
DE (1) DE10020465A1 (enExample)
TW (1) TW533602B (enExample)
WO (1) WO2001082385A1 (enExample)

Families Citing this family (139)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3825318B2 (ja) 1999-07-23 2006-09-27 オスラム オプト セミコンダクターズ ゲゼルシャフト ミット ベシュレンクテル ハフツング 発光物質装置、波長変換注入成形材および光源
JP4817534B2 (ja) * 2000-06-09 2011-11-16 星和電機株式会社 発光ダイオードランプ
DE10122002A1 (de) * 2001-05-07 2002-11-21 Osram Opto Semiconductors Gmbh Gehäuse für ein optoelektronisches Bauelement und optoelektronisches Bauelement
US6616862B2 (en) 2001-05-21 2003-09-09 General Electric Company Yellow light-emitting halophosphate phosphors and light sources incorporating the same
US6596195B2 (en) * 2001-06-01 2003-07-22 General Electric Company Broad-spectrum terbium-containing garnet phosphors and white-light sources incorporating the same
DE10214119A1 (de) * 2002-03-28 2003-10-23 Osram Opto Semiconductors Gmbh Optoelektronisches Bauelement
JP3912607B2 (ja) * 2002-06-19 2007-05-09 サンケン電気株式会社 半導体発光装置の製法
TW200414572A (en) 2002-11-07 2004-08-01 Matsushita Electric Industrial Co Ltd LED lamp
US7595113B2 (en) 2002-11-29 2009-09-29 Shin-Etsu Chemical Co., Ltd. LED devices and silicone resin composition therefor
JP2004186168A (ja) * 2002-11-29 2004-07-02 Shin Etsu Chem Co Ltd 発光ダイオード素子用シリコーン樹脂組成物
TWI237546B (en) 2003-01-30 2005-08-01 Osram Opto Semiconductors Gmbh Semiconductor-component sending and/or receiving electromagnetic radiation and housing-basebody for such a component
DE20306928U1 (de) * 2003-01-30 2004-06-03 Osram Opto Semiconductors Gmbh Elektromagnetische Strahlung aussendendes und/oder empfangendes Halbleiter-Bauelement und Gehäuse-Grundkörper für ein derartiges Bauelement
JP2004260620A (ja) 2003-02-26 2004-09-16 Ntt Docomo Inc 無線データ通信方法、サーバ装置及び無線制御装置
JP2004265977A (ja) * 2003-02-28 2004-09-24 Noritsu Koki Co Ltd 発光ダイオード光源ユニット
CN100379041C (zh) 2003-08-07 2008-04-02 松下电器产业株式会社 Led照明光源及其制造方法
WO2005018551A2 (en) 2003-08-12 2005-03-03 3M Innovative Properties Company Oxime substituted imidazo-containing compounds
CA2536136C (en) 2003-08-27 2012-10-30 3M Innovative Properties Company Aryloxy and arylalkyleneoxy substituted imidazoquinolines
WO2005023190A2 (en) 2003-09-05 2005-03-17 3M Innovative Properties Company Treatment for cd5+ b cell lymphoma
US20080025030A9 (en) * 2003-09-23 2008-01-31 Lee Kong W Ceramic packaging for high brightness LED devices
US7854535B2 (en) 2003-09-23 2010-12-21 Avago Technologies Ecbu Ip (Singapore) Pte. Ltd. Ceramic packaging for high brightness LED devices
US7544697B2 (en) 2003-10-03 2009-06-09 Coley Pharmaceutical Group, Inc. Pyrazolopyridines and analogs thereof
US8871782B2 (en) 2003-10-03 2014-10-28 3M Innovative Properties Company Alkoxy substituted imidazoquinolines
EP1685129A4 (en) 2003-11-14 2008-10-22 3M Innovative Properties Co OXIMSUBSTITUTED IMIDAZORING CONNECTIONS
CA2545825A1 (en) 2003-11-14 2005-06-02 3M Innovative Properties Company Hydroxylamine substituted imidazo ring compounds
MY161812A (en) 2003-11-25 2017-05-15 3M Innovative Properties Co Substituted imidazo ring systems and methods
JP2007517035A (ja) 2003-12-29 2007-06-28 スリーエム イノベイティブ プロパティズ カンパニー アリールアルケニルおよびアリールアルキニル置換されたイミダゾキノリン
JP2007517044A (ja) 2003-12-30 2007-06-28 スリーエム イノベイティブ プロパティズ カンパニー イミダゾキノリニル、イミダゾピリジニル、およびイミダゾナフチリジニルスルホンアミド
JP2005223112A (ja) * 2004-02-05 2005-08-18 Citizen Electronics Co Ltd 表面実装型発光ダイオード
WO2005083805A1 (ja) 2004-02-26 2005-09-09 Matsushita Electric Industrial Co., Ltd. Ｌｅｄ光源
TW200612932A (en) 2004-03-24 2006-05-01 3M Innovative Properties Co Amide substituted imidazopyridines, imidazoquinolines, and imidazonaphthyridines
JP4754850B2 (ja) * 2004-03-26 2011-08-24 パナソニック株式会社 Ｌｅｄ実装用モジュールの製造方法及びｌｅｄモジュールの製造方法
US7517728B2 (en) * 2004-03-31 2009-04-14 Cree, Inc. Semiconductor light emitting devices including a luminescent conversion element
US7326583B2 (en) * 2004-03-31 2008-02-05 Cree, Inc. Methods for packaging of a semiconductor light emitting device
US7279346B2 (en) * 2004-03-31 2007-10-09 Cree, Inc. Method for packaging a light emitting device by one dispense then cure step followed by another
DE102004021233A1 (de) 2004-04-30 2005-12-01 Osram Opto Semiconductors Gmbh Leuchtdiodenanordnung
US8975646B2 (en) 2004-05-31 2015-03-10 Osram Opto Semiconductors Gmbh Optoelectronic semiconductor component and housing base for such a component
US8017779B2 (en) 2004-06-15 2011-09-13 3M Innovative Properties Company Nitrogen containing heterocyclyl substituted imidazoquinolines and imidazonaphthyridines
US7897609B2 (en) 2004-06-18 2011-03-01 3M Innovative Properties Company Aryl substituted imidazonaphthyridines
WO2006009826A1 (en) 2004-06-18 2006-01-26 3M Innovative Properties Company Aryloxy and arylalkyleneoxy substituted thiazoloquinolines and thiazolonaphthyridines
US7915281B2 (en) 2004-06-18 2011-03-29 3M Innovative Properties Company Isoxazole, dihydroisoxazole, and oxadiazole substituted imidazo ring compounds and method
EP1622237A1 (de) * 2004-07-28 2006-02-01 Infineon Technologies Fiber Optics GmbH Optisches oder elektronisches Modul und Verfahren zu dessen Herstellung
US20060038198A1 (en) * 2004-08-23 2006-02-23 Chua Janet B Y Device and method for producing output light having a wavelength spectrum in the visible range and the infrared range using a fluorescent material
EP1630913B1 (de) * 2004-08-31 2007-10-03 Infineon Technologies AG Verfahren zum Herstellen eines mit einem Kunststoffgehäuse versehenen optischen oder elektronischen Moduls das eine optische oder elektronische Komponente enthält, sowie optisches oder elektronisches Modul
DE102004047640A1 (de) * 2004-09-30 2006-04-13 Osram Opto Semiconductors Gmbh Optoelektronisches Bauelement und Gehäuse für ein optoelektronisches Bauelement
US20060082995A1 (en) * 2004-10-14 2006-04-20 Chua Janet B Y Device and method for producing output light having a wavelength spectrum in the infrared wavelength range and the visble wavelength range
US7679672B2 (en) * 2004-10-14 2010-03-16 Avago Technologies Ecbu Ip (Singapore) Pte. Ltd. Electronic flash, imaging device and method for producing a flash of light having a wavelength spectrum in the visible range and the infrared range using a fluorescent material
DE102004053116A1 (de) * 2004-11-03 2006-05-04 Tridonic Optoelectronics Gmbh Leuchtdioden-Anordnung mit Farbkonversions-Material
JP5313502B2 (ja) 2004-12-30 2013-10-09 スリーエム イノベイティブ プロパティズ カンパニー 置換キラル縮合［１，２］イミダゾ［４，５−ｃ］環状化合物
CA2592904C (en) 2004-12-30 2015-04-07 3M Innovative Properties Company Chiral fused [1,2]imidazo[4,5-c] ring compounds
KR101047795B1 (ko) * 2005-01-05 2011-07-07 엘지이노텍 주식회사 반도체 발광소자
US7939842B2 (en) 2005-01-27 2011-05-10 Cree, Inc. Light emitting device packages, light emitting diode (LED) packages and related methods
AU2006210392A1 (en) 2005-02-04 2006-08-10 Coley Pharmaceutical Group, Inc. Aqueous gel formulations containing immune response modifiers
WO2006086634A2 (en) 2005-02-11 2006-08-17 Coley Pharmaceutical Group, Inc. Oxime and hydroxylamine substituted imidazo[4,5-c] ring compounds and methods
CN100377376C (zh) * 2005-03-21 2008-03-26 亿光电子工业股份有限公司 发光二极管反射盖制造方法
JP5065888B2 (ja) * 2005-03-24 2012-11-07 京セラ株式会社 発光装置ならびに照明装置
WO2006107853A2 (en) 2005-04-01 2006-10-12 Coley Pharmaceutical Group, Inc. Pyrazolopyridine-1,4-diamines and analogs thereof
EP1863814A1 (en) 2005-04-01 2007-12-12 Coley Pharmaceutical Group, Inc. 1-substituted pyrazolo (3,4-c) ring compounds as modulators of cytokine biosynthesis for the treatment of viral infections and neoplastic diseases
KR100631993B1 (ko) * 2005-07-20 2006-10-09 삼성전기주식회사 Ｌｅｄ 패키지 및 그 제조방법
US7646035B2 (en) 2006-05-31 2010-01-12 Cree, Inc. Packaged light emitting devices including multiple index lenses and multiple index lenses for packaged light emitting devices
US8835952B2 (en) 2005-08-04 2014-09-16 Cree, Inc. Submounts for semiconductor light emitting devices and methods of forming packaged light emitting devices including dispensed encapsulants
US7365371B2 (en) * 2005-08-04 2008-04-29 Cree, Inc. Packages for semiconductor light emitting devices utilizing dispensed encapsulants
US20070045800A1 (en) * 2005-08-19 2007-03-01 Brian King Opto-coupler with high reverse breakdown voltage and high isolation potential
KR100780176B1 (ko) * 2005-11-25 2007-11-27 삼성전기주식회사 측면 방출 발광다이오드 패키지
JP2009530798A (ja) 2006-01-05 2009-08-27 イルミテックス， インコーポレイテッド Ｌｅｄから光を導くための独立した光学デバイス
US8044412B2 (en) 2006-01-20 2011-10-25 Taiwan Semiconductor Manufacturing Company, Ltd Package for a light emitting element
US7777244B2 (en) 2006-03-17 2010-08-17 Seoul Semiconductor Co., Ltd. Side-view light emitting diode package having a reflector
KR100875443B1 (ko) * 2006-03-31 2008-12-23 서울반도체 주식회사 발광 장치
US8969908B2 (en) * 2006-04-04 2015-03-03 Cree, Inc. Uniform emission LED package
US20070269915A1 (en) * 2006-05-16 2007-11-22 Ak Wing Leong LED devices incorporating moisture-resistant seals and having ceramic substrates
US20070272934A1 (en) * 2006-05-23 2007-11-29 Kee Yean Ng LED device with improved life performance
JP2009538536A (ja) 2006-05-26 2009-11-05 クリー エル イー ディー ライティング ソリューションズ インコーポレイテッド 固体発光デバイス、および、それを製造する方法
WO2008008432A2 (en) 2006-07-12 2008-01-17 Coley Pharmaceutical Group, Inc. Substituted chiral fused( 1,2) imidazo (4,5-c) ring compounds and methods
TWI418054B (zh) * 2006-08-08 2013-12-01 Ｌｇ電子股份有限公司 發光裝置封裝與製造此封裝之方法
US8367945B2 (en) * 2006-08-16 2013-02-05 Cree Huizhou Opto Limited Apparatus, system and method for use in mounting electronic elements
DE102006046301A1 (de) * 2006-09-29 2008-04-03 Osram Opto Semiconductors Gmbh Optisches Element, strahlungsemittierendes Bauelement und Verfahren zur Herstellung eines optischen Elements
DE102006046678A1 (de) 2006-09-29 2008-04-03 Osram Opto Semiconductors Gmbh Gehäuse für ein optoelektronisches Bauelement, optoelektronisches Bauelement und Verfahren zum Herstellen eines Gehäuses für ein optoelektronisches Bauelement
KR20090064474A (ko) 2006-10-02 2009-06-18 일루미텍스, 인크. Ｌｅｄ 시스템 및 방법
US7808013B2 (en) * 2006-10-31 2010-10-05 Cree, Inc. Integrated heat spreaders for light emitting devices (LEDs) and related assemblies
DE102006059994A1 (de) * 2006-12-19 2008-06-26 Osram Opto Semiconductors Gmbh Optoelektronisches Halbleiterbauelement
TWI326923B (en) * 2007-03-07 2010-07-01 Lite On Technology Corp White light emitting diode
JP2008277607A (ja) * 2007-05-01 2008-11-13 Matsushita Electric Ind Co Ltd 発光装置、線状発光装置、面状発光装置、液晶表示装置および電子機器
WO2008151009A1 (en) * 2007-05-31 2008-12-11 Lumination Llc Environmentally robust lighting devices and methods of manufacturing same
US10505083B2 (en) * 2007-07-11 2019-12-10 Cree, Inc. Coating method utilizing phosphor containment structure and devices fabricated using same
US9401461B2 (en) * 2007-07-11 2016-07-26 Cree, Inc. LED chip design for white conversion
JP2009021426A (ja) * 2007-07-12 2009-01-29 Sharp Corp チップ部品型ｌｅｄ及びその製造方法
DE102007042642A1 (de) * 2007-09-07 2009-03-12 Osram Gesellschaft mit beschränkter Haftung Verfahren zum Herstellen eines optoelektronischen Bauelements und optoelektronisches Bauelement
US10256385B2 (en) 2007-10-31 2019-04-09 Cree, Inc. Light emitting die (LED) packages and related methods
US7687252B2 (en) * 2007-11-05 2010-03-30 Hauptman-Woodward Medcial Research Institute, Inc. Protein crystal of human cytochrome P450 aromatase and uses thereof
DE102008003971A1 (de) * 2008-01-11 2009-07-16 Ledon Lighting Jennersdorf Gmbh Leuchtdiodenanordnung mit Schutzrahmen
EP2240968A1 (en) 2008-02-08 2010-10-20 Illumitex, Inc. System and method for emitter layer shaping
US8877524B2 (en) * 2008-03-31 2014-11-04 Cree, Inc. Emission tuning methods and devices fabricated utilizing methods
JP5207807B2 (ja) * 2008-04-14 2013-06-12 シャープ株式会社 チップ部品型ｌｅｄ
CN101577300A (zh) * 2008-05-08 2009-11-11 先进开发光电股份有限公司 发光二极管及其封装方法
TWI475718B (zh) * 2008-05-21 2015-03-01 榮創能源科技股份有限公司 發光二極體及其封裝方法
US8022626B2 (en) * 2008-09-16 2011-09-20 Osram Sylvania Inc. Lighting module
US8183585B2 (en) * 2008-09-16 2012-05-22 Osram Sylvania Inc. Lighting module
US20100067240A1 (en) * 2008-09-16 2010-03-18 John Selverian Optical Cup For Lighting Module
US8188486B2 (en) * 2008-09-16 2012-05-29 Osram Sylvania Inc. Optical disk for lighting module
JP2010123746A (ja) * 2008-11-19 2010-06-03 Toshiba Corp 光半導体装置と、照明装置および表示装置
JP4799606B2 (ja) 2008-12-08 2011-10-26 株式会社東芝 光半導体装置及び光半導体装置の製造方法
TW201034256A (en) 2008-12-11 2010-09-16 Illumitex Inc Systems and methods for packaging light-emitting diode devices
TWI403006B (zh) 2009-01-15 2013-07-21 億光電子工業股份有限公司 發光二極體元件封裝結構及其製造方法
TWI449221B (zh) * 2009-01-16 2014-08-11 億光電子工業股份有限公司 發光二極體封裝結構及其製造方法
CN101783379B (zh) * 2009-01-20 2011-08-24 亿光电子工业股份有限公司 发光二极管元件封装结构及其制造方法
US8449128B2 (en) 2009-08-20 2013-05-28 Illumitex, Inc. System and method for a lens and phosphor layer
US8585253B2 (en) 2009-08-20 2013-11-19 Illumitex, Inc. System and method for color mixing lens array
DE102009055786A1 (de) * 2009-11-25 2011-05-26 Osram Opto Semiconductors Gmbh Gehäuse, optoelektronisches Bauteil und Verfahren zur Herstellung eines Gehäuses
TW201128812A (en) 2009-12-01 2011-08-16 Lg Innotek Co Ltd Light emitting device
JP5535750B2 (ja) * 2010-04-30 2014-07-02 ローム株式会社 発光素子モジュール
KR101039994B1 (ko) * 2010-05-24 2011-06-09 엘지이노텍 주식회사 발광소자 및 이를 구비한 라이트 유닛
CN101859759A (zh) * 2010-06-03 2010-10-13 陕西科技大学 一种白色led光源封装
WO2011160676A1 (en) 2010-06-22 2011-12-29 Osram Ag Phosphor device and lighting apparatus comprising the same
KR101677105B1 (ko) * 2010-08-30 2016-11-17 삼성디스플레이 주식회사 전자 부품 및 그 제조 방법
KR101761637B1 (ko) * 2010-11-24 2017-07-27 삼성전자주식회사 발광 다이오드 패키지 및 그의 제조 방법
JP2014038876A (ja) * 2010-12-15 2014-02-27 Panasonic Corp 半導体発光装置
JP5582048B2 (ja) * 2011-01-28 2014-09-03 日亜化学工業株式会社 発光装置
KR101847938B1 (ko) * 2011-03-14 2018-04-13 삼성전자주식회사 발광소자 패키지 및 그 제조 방법
CN102694102B (zh) * 2011-03-22 2014-11-05 展晶科技(深圳)有限公司 发光二极管封装结构及其制造方法、以及光源装置
JP5962102B2 (ja) * 2011-03-24 2016-08-03 日亜化学工業株式会社 発光装置及びその製造方法
JP5643700B2 (ja) * 2011-03-29 2014-12-17 シャープ株式会社 配線基板の加工方法及びその製造方法、発光装置及びその製造方法、並びに電気機器
JP2012209291A (ja) * 2011-03-29 2012-10-25 Citizen Electronics Co Ltd 発光ダイオード
EP2782150B1 (en) * 2011-11-17 2018-08-15 Lumens Co., Ltd. Light emitting device package and backlight including same
US20130249387A1 (en) * 2012-03-20 2013-09-26 Chia-Fen Hsin Light-emitting diodes, packages, and methods of making
WO2013152362A1 (en) * 2012-04-07 2013-10-10 Axlen, Inc. High flux high brightness led lighting devices
CN103489984B (zh) * 2012-06-13 2017-09-12 亿光电子工业股份有限公司 发光二极管封装结构及其制作方法
JP6476567B2 (ja) 2013-03-29 2019-03-06 日亜化学工業株式会社 発光装置
DE102013206186A1 (de) * 2013-04-09 2014-10-09 Osram Opto Semiconductors Gmbh Optoelektronisches Bauelement
DE102013213073A1 (de) * 2013-07-04 2015-01-08 Osram Opto Semiconductors Gmbh Verfahren zum Herstellen eines optoelektronischen Bauelementes
CN103390718B (zh) * 2013-08-07 2016-01-20 昆山亿业嘉精密机械有限公司 一种带球led封装上模成型工艺及其封装方法
JP6255884B2 (ja) * 2013-10-16 2018-01-10 大日本印刷株式会社 光半導体装置、光半導体装置用リードフレーム、及びそれらの製造方法
JP6229455B2 (ja) * 2013-11-25 2017-11-15 日亜化学工業株式会社 発光装置及びその製造方法
US20160079217A1 (en) * 2014-09-12 2016-03-17 Kabushiki Kaisha Toshiba Semiconductor light emitting device and lead frame
DE102014117435A1 (de) * 2014-11-27 2016-06-02 Osram Opto Semiconductors Gmbh Bauteil mit Leiterrahmenabschnitt
US9991689B2 (en) * 2015-12-16 2018-06-05 Eaton Intelligent Power Limited Power pedestal and mounting assembly therefor
JP6837776B2 (ja) * 2016-08-10 2021-03-03 株式会社小糸製作所 車両用前照灯
KR102307670B1 (ko) * 2016-10-28 2021-09-30 니뽄 도쿠슈 도교 가부시키가이샤 광 파장 변환 부재 및 발광 장치
JP7011143B2 (ja) * 2016-11-30 2022-01-26 日亜化学工業株式会社 発光装置の製造方法
CN110391326A (zh) * 2018-04-17 2019-10-29 展晶科技(深圳)有限公司 侧面发光型发光二极管封装结构
CN112430126B (zh) * 2020-11-26 2022-08-30 中国计量大学 一种激光激发荧光玻璃膜及其制备方法

Family Cites Families (26)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS48102585A (enExample) * 1972-04-04 1973-12-22
JPS5856483A (ja) * 1981-09-30 1983-04-04 Toshiba Corp 光半導体装置
DE58909875D1 (de) 1989-05-31 2000-08-31 Osram Opto Semiconductors Gmbh Verfahren zum Montieren eines oberflächenmontierbaren Opto-Bauelements
JPH0343750U (enExample) * 1989-09-04 1991-04-24
JPH0440554U (enExample) * 1990-07-31 1992-04-07
JPH05190908A (ja) * 1992-01-13 1993-07-30 Nec Corp 光電変換装置
JPH0927643A (ja) 1995-07-13 1997-01-28 Stanley Electric Co Ltd 受光／発光素子
JP3832877B2 (ja) * 1995-07-26 2006-10-11 日亜化学工業株式会社 セラミックスｌｅｄパッケージおよびその製造方法
DE19549818B4 (de) * 1995-09-29 2010-03-18 Osram Opto Semiconductors Gmbh Optoelektronisches Halbleiter-Bauelement
BR9709998B1 (pt) * 1996-06-26 2010-04-20 elemento de construção semicondutor, irradiador de luz, com elemento de conversão de luminescência
DE19638667C2 (de) 1996-09-20 2001-05-17 Osram Opto Semiconductors Gmbh Mischfarbiges Licht abstrahlendes Halbleiterbauelement mit Lumineszenzkonversionselement
TW383508B (en) 1996-07-29 2000-03-01 Nichia Kagaku Kogyo Kk Light emitting device and display
JP3065258B2 (ja) * 1996-09-30 2000-07-17 日亜化学工業株式会社 発光装置及びそれを用いた表示装置
JPH10228249A (ja) * 1996-12-12 1998-08-25 Nichia Chem Ind Ltd 発光ダイオード及びそれを用いたｌｅｄ表示装置
US6274890B1 (en) * 1997-01-15 2001-08-14 Kabushiki Kaisha Toshiba Semiconductor light emitting device and its manufacturing method
JP3797636B2 (ja) * 1997-02-21 2006-07-19 シチズン電子株式会社 表面実装型発光ダイオード及びその製造方法
JP2947344B2 (ja) * 1997-08-19 1999-09-13 サンケン電気株式会社 発光ダイオード装置
JP3472450B2 (ja) * 1997-09-04 2003-12-02 シャープ株式会社 発光装置
JP3834969B2 (ja) * 1997-11-25 2006-10-18 松下電工株式会社 冷蔵庫内照明装置
DE29804149U1 (de) * 1998-03-09 1998-06-18 Chen, Hsing, Hsinchu Leuchtdiode (LED) mit verbesserter Struktur
JP3618221B2 (ja) * 1998-04-13 2005-02-09 日亜化学工業株式会社 発光装置
JP4174858B2 (ja) * 1998-07-06 2008-11-05 日亜化学工業株式会社 発光ダイオード
JP2000031548A (ja) * 1998-07-09 2000-01-28 Stanley Electric Co Ltd 面実装型発光ダイオードおよびその製造方法
JP2000114603A (ja) * 1998-09-30 2000-04-21 Canon Inc 発光デバイス及びそれを用いた画像読取装置
DE19918370B4 (de) * 1999-04-22 2006-06-08 Osram Opto Semiconductors Gmbh LED-Weißlichtquelle mit Linse
DE19947044B9 (de) * 1999-09-30 2007-09-13 Osram Opto Semiconductors Gmbh Oberflächenmontierbares optoelektronisches Bauelement mit Reflektor und Verfahren zur Herstellung desselben

Also Published As

Publication number Publication date
US20030141510A1 (en) 2003-07-31
EP2485285A2 (de) 2012-08-08
EP2485285A3 (de) 2015-09-16
CN1284249C (zh) 2006-11-08
US20050014302A1 (en) 2005-01-20
US20060255355A1 (en) 2006-11-16
WO2001082385A1 (de) 2001-11-01
EP1277242B1 (de) 2018-08-15
DE10020465A1 (de) 2001-11-08
US7078253B2 (en) 2006-07-18
TW533602B (en) 2003-05-21
JP2003532299A (ja) 2003-10-28
CN1917244A (zh) 2007-02-21
JP5290368B2 (ja) 2013-09-18
JP2011223044A (ja) 2011-11-04
US6897490B2 (en) 2005-05-24
US7319245B2 (en) 2008-01-15
CN1426604A (zh) 2003-06-25
EP1277242A1 (de) 2003-01-22
JP5100944B2 (ja) 2012-12-19

Similar Documents

Publication Publication Date Title
CN100514687C (zh) 带有荧光变换元件的辐射半导体组件
CN101325193B (zh) 发光二极管封装体
US6614170B2 (en) Light emitting diode with light conversion using scattering optical media
TWI419372B (zh) 發光二極體的封裝結構與封裝製程
KR101251821B1 (ko) 발광 소자 패키지
US20100112735A1 (en) Chip coated light emitting diode package and manufacturing method thereof
EP1178544A2 (en) Semiconductor light emitting device and method for manufacturing same
GB2429840A (en) Phosphor-converted LED device
WO2005067068A1 (en) White led device comprising dual-mold and manufacturing method for the same
WO2009156856A2 (en) Led with improved external light extraction efficiency
KR100821684B1 (ko) 백색 발광 다이오드 소자
JP2004103814A (ja) 発光ダイオード、その製造方法および白色照明装置
JP2008010749A (ja) 発光装置およびその製造方法
KR100868204B1 (ko) 확산재를 이용하는 발광다이오드 및 그것의 제조방법
KR100649704B1 (ko) 발광 다이오드 패키지 및 그 제조방법
JP4868960B2 (ja) 発光装置およびその製造方法
KR100885473B1 (ko) 발광 다이오드 제조방법
KR100797968B1 (ko) 발광 다이오드 및 이의 제조 방법
KR102354843B1 (ko) 발광 장치
JP2011233942A (ja) 発光装置およびその製造方法
GB2466892A (en) Phosphor-converted LED device

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C14 Grant of patent or utility model
GR01 Patent grant
CF01 Termination of patent right due to non-payment of annual fee

Granted publication date: 20090715

Termination date: 20190426

CF01 Termination of patent right due to non-payment of annual fee