JP5100944B2 - ルミネセンス変換エレメントを備えた光放出半導体素子 - Google Patents
ルミネセンス変換エレメントを備えた光放出半導体素子 Download PDFInfo
- Publication number
- JP5100944B2 JP5100944B2 JP2001579375A JP2001579375A JP5100944B2 JP 5100944 B2 JP5100944 B2 JP 5100944B2 JP 2001579375 A JP2001579375 A JP 2001579375A JP 2001579375 A JP2001579375 A JP 2001579375A JP 5100944 B2 JP5100944 B2 JP 5100944B2
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- JP
- Japan
- Prior art keywords
- emitting semiconductor
- semiconductor device
- light
- luminescence conversion
- conversion element
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
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Classifications
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/85—Packages
- H10H20/8506—Containers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/85—Packages
- H10H20/851—Wavelength conversion means
- H10H20/8514—Wavelength conversion means characterised by their shape, e.g. plate or foil
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/484—Connecting portions
- H01L2224/4847—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond
- H01L2224/48471—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond the other connecting portion not on the bonding area being a ball bond, i.e. wedge-to-ball, reverse stitch
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
- H01L2224/85909—Post-treatment of the connector or wire bonding area
- H01L2224/8592—Applying permanent coating, e.g. protective coating
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/12—Passive devices, e.g. 2 terminal devices
- H01L2924/1204—Optical Diode
- H01L2924/12041—LED
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/01—Manufacture or treatment
- H10H20/036—Manufacture or treatment of packages
- H10H20/0361—Manufacture or treatment of packages of wavelength conversion means
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/85—Packages
- H10H20/855—Optical field-shaping means, e.g. lenses
- H10H20/856—Reflecting means
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/85—Packages
- H10H20/857—Interconnections, e.g. lead-frames, bond wires or solder balls
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE10020465.1 | 2000-04-26 | ||
| DE10020465A DE10020465A1 (de) | 2000-04-26 | 2000-04-26 | Strahlungsemittierendes Halbleiterbauelement mit Lumineszenzkonversionselement |
| PCT/DE2001/001601 WO2001082385A1 (de) | 2000-04-26 | 2001-04-26 | Strahlungsemittierendes halbleiterbauelement mit lumineszenzkonversionselement |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2011174088A Division JP5290368B2 (ja) | 2000-04-26 | 2011-08-09 | ルミネセンス変換エレメントを備えた光放出半導体素子およびその製造方法、led照明装置、光源 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2003532299A JP2003532299A (ja) | 2003-10-28 |
| JP5100944B2 true JP5100944B2 (ja) | 2012-12-19 |
Family
ID=7640000
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2001579375A Expired - Fee Related JP5100944B2 (ja) | 2000-04-26 | 2001-04-26 | ルミネセンス変換エレメントを備えた光放出半導体素子 |
| JP2011174088A Expired - Fee Related JP5290368B2 (ja) | 2000-04-26 | 2011-08-09 | ルミネセンス変換エレメントを備えた光放出半導体素子およびその製造方法、led照明装置、光源 |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2011174088A Expired - Fee Related JP5290368B2 (ja) | 2000-04-26 | 2011-08-09 | ルミネセンス変換エレメントを備えた光放出半導体素子およびその製造方法、led照明装置、光源 |
Country Status (7)
| Country | Link |
|---|---|
| US (3) | US6897490B2 (enExample) |
| EP (2) | EP2485285A3 (enExample) |
| JP (2) | JP5100944B2 (enExample) |
| CN (2) | CN1284249C (enExample) |
| DE (1) | DE10020465A1 (enExample) |
| TW (1) | TW533602B (enExample) |
| WO (1) | WO2001082385A1 (enExample) |
Families Citing this family (139)
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| JP4817534B2 (ja) * | 2000-06-09 | 2011-11-16 | 星和電機株式会社 | 発光ダイオードランプ |
| DE10122002A1 (de) * | 2001-05-07 | 2002-11-21 | Osram Opto Semiconductors Gmbh | Gehäuse für ein optoelektronisches Bauelement und optoelektronisches Bauelement |
| US6616862B2 (en) | 2001-05-21 | 2003-09-09 | General Electric Company | Yellow light-emitting halophosphate phosphors and light sources incorporating the same |
| US6596195B2 (en) * | 2001-06-01 | 2003-07-22 | General Electric Company | Broad-spectrum terbium-containing garnet phosphors and white-light sources incorporating the same |
| DE10214119A1 (de) * | 2002-03-28 | 2003-10-23 | Osram Opto Semiconductors Gmbh | Optoelektronisches Bauelement |
| JP3912607B2 (ja) * | 2002-06-19 | 2007-05-09 | サンケン電気株式会社 | 半導体発光装置の製法 |
| TW200414572A (en) | 2002-11-07 | 2004-08-01 | Matsushita Electric Industrial Co Ltd | LED lamp |
| US7595113B2 (en) | 2002-11-29 | 2009-09-29 | Shin-Etsu Chemical Co., Ltd. | LED devices and silicone resin composition therefor |
| JP2004186168A (ja) * | 2002-11-29 | 2004-07-02 | Shin Etsu Chem Co Ltd | 発光ダイオード素子用シリコーン樹脂組成物 |
| DE20306928U1 (de) * | 2003-01-30 | 2004-06-03 | Osram Opto Semiconductors Gmbh | Elektromagnetische Strahlung aussendendes und/oder empfangendes Halbleiter-Bauelement und Gehäuse-Grundkörper für ein derartiges Bauelement |
| TWI237546B (en) * | 2003-01-30 | 2005-08-01 | Osram Opto Semiconductors Gmbh | Semiconductor-component sending and/or receiving electromagnetic radiation and housing-basebody for such a component |
| JP2004260620A (ja) | 2003-02-26 | 2004-09-16 | Ntt Docomo Inc | 無線データ通信方法、サーバ装置及び無線制御装置 |
| JP3948417B2 (ja) * | 2003-02-28 | 2007-07-25 | ノーリツ鋼機株式会社 | 光源ユニット |
| CN100379041C (zh) | 2003-08-07 | 2008-04-02 | 松下电器产业株式会社 | Led照明光源及其制造方法 |
| AU2004266641A1 (en) | 2003-08-12 | 2005-03-03 | 3M Innovative Properties Company | Oxime substituted imidazo-containing compounds |
| EP1658076B1 (en) | 2003-08-27 | 2013-03-06 | 3M Innovative Properties Company | Aryloxy and arylalkyleneoxy substituted imidazoquinolines |
| US20050054665A1 (en) | 2003-09-05 | 2005-03-10 | 3M Innovative Properties Company | Treatment for CD5+ B cell lymphoma |
| US20080025030A9 (en) * | 2003-09-23 | 2008-01-31 | Lee Kong W | Ceramic packaging for high brightness LED devices |
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| RU2409576C2 (ru) | 2003-11-25 | 2011-01-20 | 3М Инновейтив Пропертиз Компани | Системы, содержащие имидазольное кольцо с заместителями, и способы их получения |
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| CA2551399A1 (en) | 2003-12-30 | 2005-07-21 | 3M Innovative Properties Company | Imidazoquinolinyl, imidazopyridinyl, and imidazonaphthyridinyl sulfonamides |
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|---|---|
| EP2485285A2 (de) | 2012-08-08 |
| JP2011223044A (ja) | 2011-11-04 |
| US6897490B2 (en) | 2005-05-24 |
| CN1284249C (zh) | 2006-11-08 |
| CN100514687C (zh) | 2009-07-15 |
| CN1917244A (zh) | 2007-02-21 |
| JP5290368B2 (ja) | 2013-09-18 |
| CN1426604A (zh) | 2003-06-25 |
| EP1277242A1 (de) | 2003-01-22 |
| EP1277242B1 (de) | 2018-08-15 |
| US7078253B2 (en) | 2006-07-18 |
| US7319245B2 (en) | 2008-01-15 |
| WO2001082385A1 (de) | 2001-11-01 |
| US20050014302A1 (en) | 2005-01-20 |
| EP2485285A3 (de) | 2015-09-16 |
| US20060255355A1 (en) | 2006-11-16 |
| US20030141510A1 (en) | 2003-07-31 |
| TW533602B (en) | 2003-05-21 |
| JP2003532299A (ja) | 2003-10-28 |
| DE10020465A1 (de) | 2001-11-08 |
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