CN100495706C - 半导体器件及其制造方法 - Google Patents
半导体器件及其制造方法 Download PDFInfo
- Publication number
- CN100495706C CN100495706C CNB2005100914225A CN200510091422A CN100495706C CN 100495706 C CN100495706 C CN 100495706C CN B2005100914225 A CNB2005100914225 A CN B2005100914225A CN 200510091422 A CN200510091422 A CN 200510091422A CN 100495706 C CN100495706 C CN 100495706C
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- China
- Prior art keywords
- isolation structure
- active area
- component isolation
- gate electrode
- semiconductor device
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- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 52
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 27
- 238000002955 isolation Methods 0.000 claims abstract description 122
- 238000000034 method Methods 0.000 claims description 60
- 239000010410 layer Substances 0.000 claims description 49
- 239000012535 impurity Substances 0.000 claims description 47
- 239000000758 substrate Substances 0.000 claims description 33
- 239000011810 insulating material Substances 0.000 claims description 29
- 230000006835 compression Effects 0.000 claims description 17
- 238000007906 compression Methods 0.000 claims description 17
- 238000009792 diffusion process Methods 0.000 claims description 17
- 238000000059 patterning Methods 0.000 claims description 14
- 239000002344 surface layer Substances 0.000 claims description 11
- 238000000137 annealing Methods 0.000 claims description 10
- 239000012212 insulator Substances 0.000 claims description 3
- 239000012190 activator Substances 0.000 claims 1
- 125000006850 spacer group Chemical group 0.000 abstract description 21
- 238000009413 insulation Methods 0.000 abstract description 2
- 239000012774 insulation material Substances 0.000 abstract 1
- 238000005260 corrosion Methods 0.000 description 26
- 230000007797 corrosion Effects 0.000 description 26
- 150000002500 ions Chemical class 0.000 description 15
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 12
- 238000012545 processing Methods 0.000 description 10
- 238000004380 ashing Methods 0.000 description 9
- 229910052710 silicon Inorganic materials 0.000 description 9
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 8
- 230000001133 acceleration Effects 0.000 description 8
- 238000002347 injection Methods 0.000 description 8
- 239000007924 injection Substances 0.000 description 8
- 239000010703 silicon Substances 0.000 description 8
- 229910052814 silicon oxide Inorganic materials 0.000 description 8
- 230000015572 biosynthetic process Effects 0.000 description 7
- 238000012986 modification Methods 0.000 description 7
- 230000004048 modification Effects 0.000 description 6
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 6
- 229920005591 polysilicon Polymers 0.000 description 6
- 238000010586 diagram Methods 0.000 description 5
- 230000014509 gene expression Effects 0.000 description 5
- 238000001259 photo etching Methods 0.000 description 5
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 4
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical group [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 4
- 229910052796 boron Inorganic materials 0.000 description 4
- 238000000151 deposition Methods 0.000 description 4
- 238000001312 dry etching Methods 0.000 description 4
- 238000005530 etching Methods 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 229910052698 phosphorus Inorganic materials 0.000 description 4
- 239000011574 phosphorus Substances 0.000 description 4
- 238000011049 filling Methods 0.000 description 3
- 239000011229 interlayer Substances 0.000 description 3
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 238000002425 crystallisation Methods 0.000 description 2
- 230000008025 crystallization Effects 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 239000004744 fabric Substances 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 239000000243 solution Substances 0.000 description 2
- 230000003313 weakening effect Effects 0.000 description 2
- 238000001039 wet etching Methods 0.000 description 2
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 238000003780 insertion Methods 0.000 description 1
- 230000037431 insertion Effects 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 230000003071 parasitic effect Effects 0.000 description 1
- 230000000717 retained effect Effects 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 230000001629 suppression Effects 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
- H01L21/8232—Field-effect technology
- H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
- H01L21/8238—Complementary field-effect transistors, e.g. CMOS
- H01L21/823807—Complementary field-effect transistors, e.g. CMOS with a particular manufacturing method of the channel structures, e.g. channel implants, halo or pocket implants, or channel materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
- H01L21/8232—Field-effect technology
- H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
- H01L21/8238—Complementary field-effect transistors, e.g. CMOS
- H01L21/823878—Complementary field-effect transistors, e.g. CMOS isolation region manufacturing related aspects, e.g. to avoid interaction of isolation region with adjacent structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66568—Lateral single gate silicon transistors
- H01L29/66575—Lateral single gate silicon transistors where the source and drain or source and drain extensions are self-aligned to the sides of the gate
- H01L29/6659—Lateral single gate silicon transistors where the source and drain or source and drain extensions are self-aligned to the sides of the gate with both lightly doped source and drain extensions and source and drain self-aligned to the sides of the gate, e.g. lightly doped drain [LDD] MOSFET, double diffused drain [DDD] MOSFET
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Ceramic Engineering (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Element Separation (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
Abstract
Description
Claims (13)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2005096093A JP2006278754A (ja) | 2005-03-29 | 2005-03-29 | 半導体装置及びその製造方法 |
JP2005096093 | 2005-03-29 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1841739A CN1841739A (zh) | 2006-10-04 |
CN100495706C true CN100495706C (zh) | 2009-06-03 |
Family
ID=37030665
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB2005100914225A Expired - Fee Related CN100495706C (zh) | 2005-03-29 | 2005-08-11 | 半导体器件及其制造方法 |
Country Status (3)
Country | Link |
---|---|
US (2) | US7442995B2 (zh) |
JP (1) | JP2006278754A (zh) |
CN (1) | CN100495706C (zh) |
Families Citing this family (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2006278754A (ja) * | 2005-03-29 | 2006-10-12 | Fujitsu Ltd | 半導体装置及びその製造方法 |
JP4951978B2 (ja) * | 2006-01-13 | 2012-06-13 | ソニー株式会社 | 半導体装置及びその製造方法 |
US8035168B2 (en) * | 2006-02-27 | 2011-10-11 | Synopsys, Inc. | Elevation of transistor channels to reduce impact of shallow trench isolation on transistor performance |
JP2008282901A (ja) | 2007-05-09 | 2008-11-20 | Sony Corp | 半導体装置および半導体装置の製造方法 |
JP5163311B2 (ja) * | 2008-06-26 | 2013-03-13 | 富士通セミコンダクター株式会社 | 半導体装置及びその製造方法 |
JP5099087B2 (ja) * | 2009-07-31 | 2012-12-12 | ソニー株式会社 | 半導体装置の製造方法 |
US8877602B2 (en) * | 2011-01-25 | 2014-11-04 | Taiwan Semiconductor Manufacturing Company, Ltd. | Mechanisms of doping oxide for forming shallow trench isolation |
US8466513B2 (en) | 2011-06-13 | 2013-06-18 | Semiconductor Components Industries, Llc | Semiconductor device with enhanced mobility and method |
US8778764B2 (en) | 2012-07-16 | 2014-07-15 | Semiconductor Components Industries, Llc | Method of making an insulated gate semiconductor device having a shield electrode structure and structure therefor |
US9269779B2 (en) | 2014-07-21 | 2016-02-23 | Semiconductor Components Industries, Llc | Insulated gate semiconductor device having a shield electrode structure |
Family Cites Families (38)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6476755A (en) | 1987-09-18 | 1989-03-22 | Hitachi Ltd | Semiconductor device |
JPH09252129A (ja) | 1996-03-15 | 1997-09-22 | Sony Corp | 電界効果トランジスタ及びその製造方法 |
US6242788B1 (en) * | 1997-08-01 | 2001-06-05 | Nippon Steel Corporation | Semiconductor device and a method of manufacturing the same |
US6146970A (en) * | 1998-05-26 | 2000-11-14 | Motorola Inc. | Capped shallow trench isolation and method of formation |
US6110796A (en) * | 1999-01-27 | 2000-08-29 | United Integrated Circuits Corp. | Method of improving junction leakage problem of shallow trench isolation by covering said STI with an insulating layer during salicide process |
US6133105A (en) * | 1999-04-27 | 2000-10-17 | United Microelectronics Corp. | Method of manufacturing borderless contact hole including a silicide layer on source/drain and sidewall of trench isolation structure |
US6617226B1 (en) | 1999-06-30 | 2003-09-09 | Kabushiki Kaisha Toshiba | Semiconductor device and method for manufacturing the same |
JP2001085691A (ja) | 1999-09-17 | 2001-03-30 | Toshiba Corp | 半導体装置 |
US6165871A (en) * | 1999-07-16 | 2000-12-26 | Chartered Semiconductor Manufacturing Ltd. | Method of making low-leakage architecture for sub-0.18 μm salicided CMOS device |
JP4649006B2 (ja) * | 1999-07-16 | 2011-03-09 | ルネサスエレクトロニクス株式会社 | 半導体装置 |
JP2001118919A (ja) * | 1999-10-15 | 2001-04-27 | Seiko Epson Corp | 半導体装置およびその製造方法 |
US6100161A (en) * | 1999-11-18 | 2000-08-08 | Chartered Semiconductor Manufacturing Ltd. | Method of fabrication of a raised source/drain transistor |
JP2001274383A (ja) | 2000-03-27 | 2001-10-05 | Toshiba Corp | 半導体装置及びその製造方法 |
KR100338783B1 (en) | 2000-10-28 | 2002-06-01 | Samsung Electronics Co Ltd | Semiconductor device having expanded effective width of active region and fabricating method thereof |
US6958518B2 (en) * | 2001-06-15 | 2005-10-25 | Agere Systems Inc. | Semiconductor device having at least one source/drain region formed on an isolation region and a method of manufacture therefor |
JP2003017556A (ja) * | 2001-06-29 | 2003-01-17 | Mitsubishi Electric Corp | 半導体装置およびその製造方法 |
US6551901B1 (en) * | 2001-08-21 | 2003-04-22 | Lsi Logic Corporation | Method for preventing borderless contact to well leakage |
US6509232B1 (en) * | 2001-10-01 | 2003-01-21 | Advanced Micro Devices, Inc. | Formation of STI (shallow trench isolation) structures within core and periphery areas of flash memory device |
JP2003197906A (ja) | 2001-12-28 | 2003-07-11 | Fujitsu Ltd | 半導体装置および相補型半導体装置 |
JP3652322B2 (ja) * | 2002-04-30 | 2005-05-25 | Necエレクトロニクス株式会社 | 縦型mosfetとその製造方法 |
US6716719B2 (en) * | 2002-05-29 | 2004-04-06 | Micron Technology, Inc. | Method of forming biasable isolation regions using epitaxially grown silicon between the isolation regions |
TWI252565B (en) | 2002-06-24 | 2006-04-01 | Hitachi Ltd | Semiconductor device and manufacturing method thereof |
JP2004228557A (ja) | 2002-06-24 | 2004-08-12 | Hitachi Ltd | 半導体装置及びその製造方法 |
JP4750342B2 (ja) * | 2002-07-03 | 2011-08-17 | ルネサスエレクトロニクス株式会社 | Mos−fetおよびその製造方法、並びに半導体装置 |
US7018996B2 (en) | 2002-07-11 | 2006-03-28 | Wyeth Holdings Corporation | Antibiotics AW998A, AW998B, AW998C and AW998D |
US6828211B2 (en) * | 2002-10-01 | 2004-12-07 | Taiwan Semiconductor Manufacturing Co., Ltd. | Shallow trench filled with two or more dielectrics for isolation and coupling or for stress control |
US6717216B1 (en) * | 2002-12-12 | 2004-04-06 | International Business Machines Corporation | SOI based field effect transistor having a compressive film in undercut area under the channel and a method of making the device |
US6649489B1 (en) * | 2003-02-13 | 2003-11-18 | Taiwan Semiconductor Manufacturing Company | Poly etching solution to improve silicon trench for low STI profile |
US7019380B2 (en) | 2003-06-20 | 2006-03-28 | Kabushiki Kaisha Toshiba | Semiconductor device |
US6716691B1 (en) * | 2003-06-25 | 2004-04-06 | Sharp Laboratories Of America, Inc. | Self-aligned shallow trench isolation process having improved polysilicon gate thickness control |
KR100557541B1 (ko) * | 2003-06-30 | 2006-03-03 | 주식회사 하이닉스반도체 | 반도체소자의 제조방법 |
US6797587B1 (en) * | 2003-08-13 | 2004-09-28 | Taiwan Semiconductor Manufacturing Co., Ltd | Active region corner implantation method for fabricating a semiconductor integrated circuit microelectronic fabrication |
US6974755B2 (en) * | 2003-08-15 | 2005-12-13 | Taiwan Semiconductor Manufacturing Company, Ltd. | Isolation structure with nitrogen-containing liner and methods of manufacture |
US6979627B2 (en) * | 2004-04-30 | 2005-12-27 | Freescale Semiconductor, Inc. | Isolation trench |
US7238564B2 (en) * | 2005-03-10 | 2007-07-03 | Taiwan Semiconductor Manufacturing Company | Method of forming a shallow trench isolation structure |
JP2006278754A (ja) * | 2005-03-29 | 2006-10-12 | Fujitsu Ltd | 半導体装置及びその製造方法 |
US7560780B2 (en) * | 2005-12-08 | 2009-07-14 | Intel Corporation | Active region spacer for semiconductor devices and method to form the same |
US7485544B2 (en) * | 2006-08-02 | 2009-02-03 | Micron Technology, Inc. | Strained semiconductor, devices and systems and methods of formation |
-
2005
- 2005-03-29 JP JP2005096093A patent/JP2006278754A/ja active Pending
- 2005-07-28 US US11/190,967 patent/US7442995B2/en not_active Expired - Fee Related
- 2005-08-11 CN CNB2005100914225A patent/CN100495706C/zh not_active Expired - Fee Related
-
2008
- 2008-07-02 US US12/216,273 patent/US7741185B2/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
US20060223272A1 (en) | 2006-10-05 |
US7442995B2 (en) | 2008-10-28 |
US7741185B2 (en) | 2010-06-22 |
CN1841739A (zh) | 2006-10-04 |
US20080274606A1 (en) | 2008-11-06 |
JP2006278754A (ja) | 2006-10-12 |
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Owner name: FUJITSU MICROELECTRONICS CO., LTD. Free format text: FORMER OWNER: FUJITSU LIMITED Effective date: 20081107 |
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Effective date of registration: 20081107 Address after: Tokyo, Japan Applicant after: FUJITSU MICROELECTRONICS Ltd. Address before: Kanagawa Applicant before: Fujitsu Ltd. |
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Owner name: FUJITSU SEMICONDUCTOR CO., LTD. Free format text: FORMER NAME: FUJITSU MICROELECTRON CO., LTD. |
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Address after: Japan's Kanagawa Prefecture Yokohama Patentee after: FUJITSU MICROELECTRONICS Ltd. Address before: Japan's Kanagawa Prefecture Yokohama Patentee before: Fujitsu Microelectronics Ltd. |
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CP02 | Change in the address of a patent holder |
Address after: Japan's Kanagawa Prefecture Yokohama Patentee after: FUJITSU MICROELECTRONICS Ltd. Address before: Tokyo, Japan Patentee before: Fujitsu Microelectronics Ltd. |
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CF01 | Termination of patent right due to non-payment of annual fee | ||
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Granted publication date: 20090603 Termination date: 20190811 |