CN100468793C - 使用氮化物半导体的发光器件和其制造方法 - Google Patents

使用氮化物半导体的发光器件和其制造方法 Download PDF

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Publication number
CN100468793C
CN100468793C CNB2004800003288A CN200480000328A CN100468793C CN 100468793 C CN100468793 C CN 100468793C CN B2004800003288 A CNB2004800003288 A CN B2004800003288A CN 200480000328 A CN200480000328 A CN 200480000328A CN 100468793 C CN100468793 C CN 100468793C
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layer
gan
mixes
contact electrode
electrode contact
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CN1698212A (zh
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李昔宪
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LG Innotek Co Ltd
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/822—Materials of the light-emitting regions
    • H10H20/824—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP
    • H10H20/825—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP containing nitrogen, e.g. GaN
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/811—Bodies having quantum effect structures or superlattices, e.g. tunnel junctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/815—Bodies having stress relaxation structures, e.g. buffer layers

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CNB2004800003288A 2003-06-25 2004-06-21 使用氮化物半导体的发光器件和其制造方法 Expired - Fee Related CN100468793C (zh)

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KR1020030041409 2003-06-25
KR10-2003-0041409A KR100525545B1 (ko) 2003-06-25 2003-06-25 질화물 반도체 발광소자 및 그 제조방법

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CN1698212A CN1698212A (zh) 2005-11-16
CN100468793C true CN100468793C (zh) 2009-03-11

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CN200710196586.3A Expired - Fee Related CN101179106B (zh) 2003-06-25 2004-06-21 使用氮化物半导体的发光器件和其制造方法

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US (2) US7193236B2 (enExample)
EP (1) EP1636858B1 (enExample)
JP (2) JP2006510234A (enExample)
KR (1) KR100525545B1 (enExample)
CN (2) CN100468793C (enExample)
DE (1) DE202004021874U1 (enExample)
WO (1) WO2004114421A1 (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN107464863A (zh) * 2012-10-09 2017-12-12 佳能株式会社 氮化物半导体发光器件及其制作方法

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CN107464863B (zh) * 2012-10-09 2020-02-11 佳能株式会社 氮化物半导体发光器件及其制作方法

Also Published As

Publication number Publication date
EP1636858B1 (en) 2016-11-16
JP2006510234A (ja) 2006-03-23
CN101179106B (zh) 2013-01-23
WO2004114421A1 (en) 2004-12-29
JP2008182284A (ja) 2008-08-07
US7193236B2 (en) 2007-03-20
DE202004021874U1 (de) 2012-01-18
US7691657B2 (en) 2010-04-06
KR100525545B1 (ko) 2005-10-31
EP1636858A4 (en) 2007-01-24
EP1636858A1 (en) 2006-03-22
US20050236631A1 (en) 2005-10-27
US20060081831A1 (en) 2006-04-20
KR20050000846A (ko) 2005-01-06
CN101179106A (zh) 2008-05-14
CN1698212A (zh) 2005-11-16

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