CN100468793C - Light emitting device using nitride semiconductor and fabrication method of the same - Google Patents
Light emitting device using nitride semiconductor and fabrication method of the same Download PDFInfo
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- CN100468793C CN100468793C CNB2004800003288A CN200480000328A CN100468793C CN 100468793 C CN100468793 C CN 100468793C CN B2004800003288 A CNB2004800003288 A CN B2004800003288A CN 200480000328 A CN200480000328 A CN 200480000328A CN 100468793 C CN100468793 C CN 100468793C
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 60
- 150000004767 nitrides Chemical class 0.000 title claims abstract description 44
- 238000000034 method Methods 0.000 title description 20
- 238000004519 manufacturing process Methods 0.000 title description 12
- 150000001875 compounds Chemical class 0.000 claims abstract description 44
- 239000000758 substrate Substances 0.000 claims abstract description 39
- 239000011248 coating agent Substances 0.000 claims description 38
- 238000000576 coating method Methods 0.000 claims description 38
- 230000004888 barrier function Effects 0.000 claims description 29
- 239000013078 crystal Substances 0.000 abstract description 16
- 230000007547 defect Effects 0.000 abstract description 15
- 230000012010 growth Effects 0.000 description 32
- 239000007789 gas Substances 0.000 description 6
- 229910052594 sapphire Inorganic materials 0.000 description 5
- 239000010980 sapphire Substances 0.000 description 5
- BSYNRYMUTXBXSQ-UHFFFAOYSA-N Aspirin Chemical compound CC(=O)OC1=CC=CC=C1C(O)=O BSYNRYMUTXBXSQ-UHFFFAOYSA-N 0.000 description 4
- 239000000203 mixture Substances 0.000 description 4
- 239000000956 alloy Substances 0.000 description 3
- 229910045601 alloy Inorganic materials 0.000 description 3
- 238000009792 diffusion process Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 229910052738 indium Inorganic materials 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 241001062009 Indigofera Species 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 239000012159 carrier gas Substances 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 229910008313 Si—In Inorganic materials 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 230000007773 growth pattern Effects 0.000 description 1
- 238000011031 large-scale manufacturing process Methods 0.000 description 1
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
- H01L33/32—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/04—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/12—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a stress relaxation structure, e.g. buffer layer
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Abstract
A nitride based 3-5 group compound semiconductor light emitting device comprising: a substrate; a buffer layer formed above the substrate; a first In-doped GaN layer formed above the buffer layer; in InxGa1-xN/InyGa1-yN super lattice structure layer formed above the first In-doped GaN layer; a first electrode contact layer formed above the InxGa1-xN/InyGa1-yN super lattice structure layer; an active layer formed above the first electrode contact layer and functioning to emit light; a second In-doped GaN layer; a GaN layer formed above the second In-doped GaN layer; and a second electrode layer formed above the GaN layer. The present invention can reduce crystal defects of the nitride based 3-5 group compound semiconductor light emitting device and improve the crystallinity of a GaN based single crystal layer in order to improve the performance of the light emitting device and ensure the reliability thereof.
Description
Technical field
The present invention relates to 3-5 family (group) compound semiconductor based on nitride.More particularly, the present invention relates to 3-5 compound semiconductor luminescent device and its manufacture method based on nitride, described light emitting semiconductor device can reduce by substrate and the coefficient of thermal expansion mismatch between the Grown GaN base single crystalline layer and the crystal defect due to the lattice constant mismatch thereon, improve the crystallinity of GaN base single crystalline layer, to improve the performance of luminescent device, guarantee its reliability.
Background technology
The GaN base semiconductor is applied to optics usually, as indigo plant/green LED and speed-sensitive switch with such as the high power electronic device of metal-semiconductor field effect transistor (MESFET) and high-electron-mobility transistr (HEMT).Specifically, indigo plant/green LED large-scale production recently, and it just sharply increases in global demand.
The GaN based semiconductor light-emitting device typically is grown on sapphire or the SiC substrate.Then, Al under the low growth temperature
yGa
1-yThe N polycrystal layer as buffer growth on sapphire or SiC substrate.At high temperature, the unadulterated GaN layer of growth and Si doped n type GaN layer or its mixed structure on resilient coating are to provide n type GaN layer as first contact electrode layer.Then, form Mg doped p type layer thereon, to generate 3-5 compound semiconductor luminescent device based on nitride as second contact electrode layer.In addition, (multi-quantum pit structure) active layer is between n type first contact electrode layer and p type second contact electrode layer.
In the 3-5 compound semiconductor luminescent device based on nitride of this structure, the crystal defect between substrate and the resilient coating in the interface has very high by about 10
8/ cm
3Value.As a result, this has reduced the electrical properties based on the 3-5 compound semiconductor luminescent device of nitride, more particularly, increases the leakage current under the reverse bias condition, thereby the reliability of luminescent device is produced significant impact.
In addition, the crystal defect that produces in the interface between substrate and resilient coating reduces the crystallinity of active layer, thereby reduces the luminous efficiency based on the 3-5 compound semiconductor luminescent device of nitride unfriendly.
Therebetween, in order to improve the Performance And Reliability of GaN based semiconductor light-emitting device, after deliberation new resilient coating, and studied the various manufacture methods of GaN base semiconductor.
Summary of the invention
The present invention is intended to solve the aforementioned problems in the prior, therefore an object of the present invention is to provide a kind of 3-5 compound semiconductor luminescent device and its manufacture method based on nitride, described luminescent device can reduce the crystal defect of GaN base single crystalline layer, and improve its crystallinity, to improve its Performance And Reliability.
Another object of the present invention provides a kind of 3-5 compound semiconductor luminescent device and its manufacture method based on nitride, and described luminescent device can be realized the high brightness capabilities from the active layer that single quantum is only arranged in practice.
According to an aspect of realization above-mentioned purpose of the present invention, a kind of 3-5 compound semiconductor luminescent device based on nitride is provided, it comprises: substrate; The resilient coating that on substrate, forms; The GaN layer that an In who forms on resilient coating mixes; The In that on the GaN layer that an In mixes, forms
xGa
1-xN/In
yGa
1-yThe N super lattice structure layers; At In
xGa
1-xN/In
yGa
1-yFirst contact electrode layer that forms on the N super lattice structure layers; Active layer that form, that play luminous effect on first contact electrode layer; The GaN layer that the 2nd In mixes; The GaN layer that on the GaN layer that the 2nd In mixes, forms; With second contact electrode layer that on the GaN layer, forms.
Realize another aspect of above-mentioned purpose according to the present invention, a kind of 3-5 compound semiconductor luminescent device based on nitride is provided, it comprises: substrate; The resilient coating that on substrate, forms; The GaN layer that an In who forms on resilient coating mixes; First contact electrode layer that on the GaN layer that an In mixes, forms; Active layer that form, that play luminous effect on first contact electrode layer; The GaN layer that on active layer, forms; With second contact electrode layer that on the GaN layer, forms.
According to another aspect of realization above-mentioned purpose of the present invention, a kind of 3-5 compound semiconductor luminescent device based on nitride is provided, it comprises: substrate; The resilient coating that on substrate, forms; First contact electrode layer that on the GaN resilient coating, forms; The active layer that forms on first contact electrode layer comprises the In that low mole In mixes
xGa
1-xN layer, In
yGa
1-yN trap layer and In
zGa
1-zThe N barrier layer; The GaN layer that on active layer, forms; With second contact electrode layer that on the GaN layer, forms.
According to another aspect of realization above-mentioned purpose of the present invention, a kind of manufacture method of the 3-5 compound semiconductor luminescent device based on nitride is provided, this method comprises: form resilient coating on substrate; On resilient coating, form the GaN layer that an In mixes; On the GaN layer that an In mixes, form first contact electrode layer; On first contact electrode layer, form luminous active layer; On active layer, form the GaN layer; And on the GaN layer, form second contact electrode layer.
Advantage of the present invention is to reduce the crystal defect of GaN base single crystalline layer, and improves its crystallinity, thereby improves its Performance And Reliability.
As another advantage, the present invention can realize the high brightness capabilities from the active layer that single quantum is only arranged in practice.
Description of drawings
Fig. 1 has illustrated the structure based on the 3-5 compound semiconductor luminescent device of nitride according to first embodiment of the invention.
Fig. 2 has illustrated the structure based on the 3-5 compound semiconductor luminescent device of nitride according to second embodiment of the invention.
Fig. 3 has illustrated the structure based on the 3-5 compound semiconductor luminescent device of nitride according to third embodiment of the invention.
Fig. 4 has illustrated the structure based on the 3-5 compound semiconductor luminescent device of nitride according to four embodiment of the invention.
Embodiment
Describe the preferred embodiments of the invention below with reference to the accompanying drawings in detail.
When the preferred embodiments of the invention when being described with reference to the accompanying drawings, those skilled in the art are as can be seen: principle of the present invention not only is not subjected to the restriction of disclosed embodiment, can also be revised as various substitute modes by increasing, change and omitting some parts.
First embodiment
Fig. 1 has illustrated the structure based on the 3-5 compound semiconductor luminescent device of nitride according to first embodiment of the invention.
As shown in Figure 1, have based on the 3-5 compound semiconductor luminescent device of nitride and comprise following cross-sectional structure: the resilient coating 104 of growth, first contact electrode layer 108 and the In that form by n type GaN layer (codope has Si and In) on substrate 102
xGa
1-xN/In
yGa
1-ySecond contact electrode layer 120 of N superlattice structure.Here, provide the electrode (not shown) respectively in first and second contact electrode layers 108 and 120 procedure of processing below, so that can apply external voltage to it by electrode.
Of the present invention also have the active layer 116 of quantum well structure based on the 3-5 compound semiconductor luminescent device of nitride, and it places between first contact electrode layer 108 and second contact electrode layer 120, forms heterostructure.Active layer 116 comprises GaN layer 110, the In that low mole In mixes
xGa
1-yN trap layer 112 and In
xGa
1-xN barrier layer 114.
In addition, the 3-5 compound semiconductor luminescent device based on nitride also has the GaN layer 106 of the In doping that is formed between the resilient coating 104 and first contact electrode layer 108 and is formed at In
xGa
1-xP type GaN layer 118 between the N barrier layer 114 and second contact electrode layer 120.
The manufacture method of the 3-5 compound semiconductor luminescent device based on nitride of the present invention is as described below:
At first, on Sapphire Substrate 102, form GaN resilient coating 104 under the low growth temperature.Then, the resilient coating 104 of GaN base semiconductor can grow into InGaN/GaN superlattice structure and In under the low growth temperature
xGa
1-xN/GaN and Al
xIn
yGa
1-x, yN/In
xGa
1-xThe N/GaN structure.
Can limit effectively by substrate 102 with at coefficient of thermal expansion mismatch between the Grown GaN base single crystalline layer and the crystal defect due to the lattice constant mismatch on the substrate 102 at the resilient coating 104 that forms on the substrate 102 as mentioned above, thereby generate the high quality GaN base semiconductor.
More particularly, in the procedure of processing of growing GaN resilient coating 104, under about 500-700 ℃ temperature, supply with H
2With N
2Carrier gas; TMGa, TMIn and TMA1 source and NH
3Gas is with growing GaN resilient coating 104.
Then, the GaN layer 106 that growth In mixes on resilient coating 104 under the high growth temperature and wherein comprise Si and the GaN layer 108 of In codope.Here the GaN layer 108 of Si/In codope is as first contact electrode layer.
More particularly, in the procedure of processing of the GaN of growing GaN base semiconductor base single crystalline layer, come growing GaN base single crystalline layer, wherein SiH by under about 900-1100 ℃ temperature, supplying with MOCVD equipment TMGa, TMIn and TMA1 source
4Gas can be used as the Si doped source, and TMIn can be used as the In doped source.
The active layer 116 of launching the light in the required wave-length coverage comprises single quantum well.More particularly, the GaN layer 110 of the low mole In doping of active layer 116 is grown in
Scope in.Preferred, the GaN layer 110 that low mole In mixes grows to
The thickness of scope.The content of the GaN layer that low mole In mixes can be expressed as In
xGa
1-xN (0＜x≤0.2).Then, In
yGa
1-yThe In of the quantum well layer of N trap layer 112 and different I n content
zGa
1-zThe In that N barrier layer 114 mixes at low mole In
xGa
1-xGrowth forms active layer on the N layer 110.
In the procedure of processing of single quantum of growth active layer 116, by at NH
3In the atmosphere at N
2Or H
2+ N
2Mobile TMGa, TMIn and TMA1 source in the carrier gas, the In that the low mole of growth In mixes
xGa
1-xN layer 110, In
yGa
1-yN trap layer 112 (0＜y≤0.35) and In
zGa
1-zN barrier layer 114 (0＜z≤0.2).In this case, the In of low mole In doping
xGa
1-xN layer 110 has approximately
Thickness, and evenly grow with helicon mode in its surface.In addition, under about 700-800 ℃ superficial growth temperature, luminous InGaN trap layer 112 grows to
Thickness, InGaN barrier layer 114 grows to
Thickness.
In addition, in order to realize the high brightness luminescent device performance, be necessary the In that mixes from low mole In
xGa
1-xUniform helicon mode is kept to InGaN barrier layer 114 in N layer 110 surface.If satisfy above-mentioned growth conditions, can make practical high brightness luminescent device by the active layer that formation has single quantum and has a multi-quantum pit structure.Certainly, under the identical situation of other parts, can adopt multi-quantum pit structure.
Therebetween, the In of low mole In doping
xGa
1-xN layer 110, In
yGa
1-yN trap layer 112 and In
zGa
1-zThe content distribution of alloy can be adjusted as follows in the N barrier layer 114: the In that low mole In mixes
xGa
1-xThe In content of N layer 110 is adjusted to and is lower than In
zGa
1-zThe In content of N barrier layer 114.In content x, the y and the z that mix can be expressed as 0＜x＜0.05,0＜y＜0.3 and 0＜z＜0.1.
After the luminous active layer of described procedure of processing growth, elevated temperature is at H
2, N
2And H
2+ N
2In the gas, NH
3Growth Mg doped p type GaN base single crystalline layer 118 under the atmosphere.P type GaN layer 118 grows to thickness approximately under about 900-1020 ℃ growth temperature
When growing p-type GaN layer 118, In
xGa
1-xN/In
yGa
1-ySecond contact electrode layer 120 of N superlattice structure (0＜x≤0.2 and 0＜y≤0.2) is grown on p type GaN layer 118.In
xGa
1-xN/In
yGa
1-yThe N superlattice structure is given the effective current that propagates into second contact electrode layer 120.The electrode of second contact electrode layer can advantageously obtain from the electrode metal identical with first contact electrode layer 108.
According to the 3-5 compound semiconductor luminescent device based on nitride of this embodiment, first contact electrode layer 108 is formed by n type contact electrode layer, and second contact electrode layer 120 is formed by n-type contact electrode layer.Because in the 3-5 compound semiconductor luminescent device of routine based on nitride of first and second contact electrode layers with n type and p type contact electrode layer form, high contact impedance is because of the low Mg doping efficiency of the p type GaN layer that is used as second contact electrode layer, therefore this embodiment can overcome high contact impedance, removes the current spread layer that is produced.
As for the relation of p type GaN layer 118, can be expressed as first contact electrode layer 108, p type GaN layer 118 has n-p-n with second contact electrode layer 120 and is connected.
Here, second contact electrode layer 120 exists
Thickness under replace each other, and second contact electrode layer 120 have less than
Maximum ga(u)ge.In addition, in 700-850 ℃ growth temperature range, by supplying with N
2, N
2+ H
2With NH
3Gas and TMGa and TMIn source have the high brightness luminescent device of heterostructure with growth, and it is excellent in internal quantum and operating voltage properties.
Second embodiment
Fig. 2 has illustrated the structure based on the 3-5 compound semiconductor luminescent device of nitride according to second embodiment of the present invention.
Basic identical based on the structure of the 3-5 compound semiconductor luminescent device of nitride and first embodiment as shown in Figure 2 of the present invention is except also being equipped with In under first contact electrode layer 212
xGa
1-xN/In
yGa
1-yN super lattice structure layers 210 is to form heterostructure, so that make by lattice constant mismatch between the GaN base single crystalline layer 212 of substrate 202 and Si/In doping and the crystal defect minimum due to the coefficient of thermal expansion mismatch.
This structure can reduce with the breakback voltage Vbr of raising luminescent device, thereby to improve its reliability from the dislocation density of substrate 202 and low temperature buffer layer 204 propagation.
The structure based on the 3-5 compound semiconductor luminescent device of nitride of second embodiment according to the present invention will be briefly described below:
The active layer 220 that also has single quantum based on the 3-5 compound semiconductor luminescent device of nitride of the present invention, it is between first contact electrode layer 212 and second contact electrode layer 224, to form heterostructure.Active layer 220 comprises the In that low mole In mixes
xGa
1-xN layer 214, In
xGa
1-y N trap layer 216 and In
xGa
1-x N barrier layer 218.
In addition, also have GaN layer 206 and the unadulterated GaN layer 208 that In mixes based on the 3-5 compound semiconductor luminescent device of nitride, between the resilient coating 204 and first contact electrode layer 212.At In
xGa
1-xAlso form p type GaN layer 222 between the N barrier layer 218 and second contact electrode layer 224.
The manufacture method and first embodiment based on the 3-5 compound semiconductor luminescent device of nitride with said structure are similar, therefore will be not described further.
Second embodiment of this structure can reduce with the breakback voltage Vbr of raising luminescent device, thereby to improve its reliability from the dislocation density of substrate 202 and resilient coating 204 propagation.
The 3rd embodiment
Fig. 3 has illustrated the structure based on the 3-5 compound semiconductor luminescent device of nitride according to the 3rd embodiment of the present invention.
As shown in Figure 3, this embodiment and first embodiment are similar substantially, except at p type GaN layer 320 and In
zGa
1-zAlso be equipped with the GaN layer 318 that In mixes between the N barrier layer 314, to form heterostructure.
The GaN layer 318 that extra In mixes may be limited to the inside diffusion (in-diffusion) that is used as the Mg atom of alloy in the p type GaN layer 320, thereby improves its feature.The GaN layer 318 that In mixes grows to
Or littler thickness.
The manufacture method of the light emitting semiconductor device of the 3rd embodiment will be described below.Grown buffer layer 304, the first contact electrode layers 308 are made by n type GaN (codope has Si and In) on substrate 302, and second contact electrode layer 322 is by In
xGa
1-xN/In
yGa
1-yThe N superlattice structure forms.Here, first and second contact electrode layers 308,322 provide the electrode (not shown) respectively in the procedure of processing below, so that can apply external voltage to it by electrode.
The active layer 316 that also has single quantum based on the 3-5 compound semiconductor luminescent device of nitride of the present invention, it is between first contact electrode layer 308 and second contact electrode layer 322, to form heterostructure.Active layer 316 comprises the In that low mole In mixes
xGa
1-xN layer 310, In
xGa
1-y N trap layer 312 and In
xGa
1-x N barrier layer 314.
In addition, also have the GaN layer 306 that the In between the resilient coating 304 and first contact electrode layer 308 mixes, and the GaN layer 318 that p type GaN layer 320 and In mix places In based on the 3-5 compound semiconductor luminescent device of nitride
zGa
1-zBetween the N barrier layer 314 and second contact electrode layer 322.
As mentioned above, the extra GaN layer 318 of this embodiment may be limited to the inside diffusion that is used as the Mg atom of alloy in the p type GaN layer 320.This embodiment can be improved the feature of luminescent device.
The 4th embodiment
Fig. 4 has illustrated the structure based on the 3-5 compound semiconductor luminescent device of nitride according to the 4th embodiment of the present invention.
The mass part of the 4th embodiment is all identical with the 3rd embodiment, except GaN layer 406, the In that additionally provides In to mix
xGa
1-xN/In
yGa
1-yGaN layer 412 and In that N super lattice structure layers 408, In mix
xGa
1-xN/In
yGa
1-yN super lattice structure layers 414.In
xGa
1-xN/In
yGa
1-yGaN layer 412 and In that N super lattice structure layers 408, In mix
xGa
1-xN/In
yGa
1-yThe effect of N super lattice structure layers 414 is to make from the lattice constant mismatch of substrate 402 and the crystal defect of coefficient of thermal expansion mismatch to minimize.In addition, In
xGa
1-xN/In
yGa
1-yN super lattice structure layers 408 can also reduce from the dislocation density of substrate 402 and low temperature buffer layer 404 propagation, thereby improves the breakback voltage Vbr of luminescent device.
Describe the manufacture method of the light emitting semiconductor device of this embodiment below in detail with reference to Fig. 4.
Under the low growth temperature on Sapphire Substrate 402 growing GaN base semiconductor resilient coating 404.Under low growth temperature, the resilient coating 404 of GaN base semiconductor can be by InGaN/GaN superlattice structure and In
xGa
1-xN/GaN and Al
xIn
yGa
1-x, yN/In
xGa
1-xThe structure of N/GaN forms.
Can limit effectively by substrate 402 with at coefficient of thermal expansion mismatch between the Grown GaN base single crystalline layer and the crystal defect due to the lattice constant mismatch on the substrate 402 at the resilient coating 404 that forms on the substrate 402 as mentioned above, thereby generate the high quality GaN base semiconductor.
Then, the GaN layer 406 that growth In mixes on resilient coating 404 under the high growth temperature also forms In on the GaN layer 406 that In mixes
xGa
1-xN/In
yGa
1-yN super lattice structure layers 408 minimizes thereby make from the lattice constant mismatch of substrate 402 and the crystal defect of coefficient of thermal expansion mismatch.
This structure can reduce with the breakback voltage Vbr of raising luminescent device, thereby to improve its reliability from the dislocation density of substrate 402 and low temperature buffer layer 404 propagation.
In addition, at In
xGa
1-xN/In
yGa
1-yAlso form GaN layer 412 and In that In mixes on the N super lattice structure layers 408
xGa
1-xN/In
yGa
1-yN super lattice structure layers 414 is further to reduce crystal defect.
Then, at In
xGa
1-xN/In
yGa
1-yThe GaN layer 416 of growth Si/In codope on the N super lattice structure layers 414.The GaN layer 416 of Si/In codope is as first contact electrode layer.
Subsequently, in active layer 424, form the single quantum well layer, be used to launch the light of required wave-length coverage.More particularly, the In of low mole In doping
xGa
1-xAt first growth in active layer 424 of N layer 418 (0＜x≤0.2) is to improve the internal quantum of active layer 424.In in low mole In doping
xGa
1-xGrowth comprises In on the N layer 418
yGa
1-yThe In of N trap layer 420 and different I n content
zGa
1-zThe quantum well structure of N barrier layer 422 promptly gets active layer.
In growth step, by at NH
3Supply with N in the atmosphere
2With H
2+ N
2Gas and TMGa, TMIn and TMA1 source, the active layer 424 of growth single quantum, it comprises the In that low mole In mixes
xGa
1-xN layer 418, In
yGa
1-yN trap layer 420 (0＜y≤0.35) and In
zGa
1-zN barrier layer 422 (0＜z≤0.2).Low mole In
xGa
1-xN layer 418 has approximately
Thickness, evenly grow with helicon mode in its surface.
Under about 700-800 ℃ growth temperature, luminous InGaN trap layer 420 grows to thickness and is
InGaN barrier layer 422 grows to thickness
In addition, in order to realize the high brightness luminescent device performance, be necessary to keep the In that mixes from low mole In
xGa
1-xN layer 418 surface are to In
zGa
1-zThe even helicon mode of N barrier layer 422.If satisfy above-mentioned growth conditions, can have single quantum by formation and make practical high brightness luminescent device with active layer with multi-quantum pit structure.
After the growth light-emitting active layer, GaN layer 426 that growth In mixes and Mg doped p type GaN GaN base single crystalline layer 428.Under about 900-1020 ℃ growth temperature, p type GaN layer 428 grows to thickness and is about
Then, behind the growing p-type GaN layer 428, In grows on p type GaN layer 428
xGa
1-xN/In
yGa
1-ySecond contact electrode layer 430 of N superlattice structure (0＜x≤0.2, and 0＜y≤0.2).Advantageously, In
xGa
1-xN/In
yGa
1-yThe N superlattice structure can be finished the current spread of second contact electrode layer 430, and the electrode of second contact electrode layer can obtain from the electrode metal identical with first contact electrode layer 416.
According to the 3-5 compound semiconductor luminescent device based on nitride of this embodiment, first contact electrode layer 416 is formed by n type contact electrode layer, and second contact electrode layer 430 is formed by n type contact electrode layer.Because in the 3-5 compound semiconductor luminescent device of routine based on nitride of first and second contact electrode layers with n type and p type contact electrode layer form, high contact impedance is because of the low Mg doping efficiency of the p type GaN layer that is used as second contact electrode layer, therefore this embodiment can overcome high contact impedance, removes the current spread layer that is produced.
As for the relation of p type GaN layer 428, can be expressed as first contact electrode layer 416, p type GaN layer 428 has n-p-n with second contact electrode layer 430 and is connected.The super lattice structure layers of second contact electrode layer 430 exists
Thickness under replace each other, and second contact electrode layer 430 have less than
Maximum ga(u)ge.In addition, in 700-850 ℃ growth temperature range, by supplying with N
2, N
2+ H
2With NH
3Growth step is carried out in gas and TMGa and TMIn source, has the high brightness luminescent device of heterostructure with growth, and it is excellent in internal quantum and operating voltage properties.
Industrial applicability
According to above-mentioned 3-5 compound semiconductor luminescent device and manufacture method thereof based on nitride of the present invention, Can effectively limit by the thermal expansion between the GaN GaN base single crystalline layer of substrate such as sapphire and growth thereon Crystal defect due to coefficient mismatch and the lattice constant mismatch, thereby the GaN base semiconductor of growing high-quality. Specifically Be InxGa
1-xN/In
yGa
1-yThe N superlattice structure places under the GaN layer of Si-In codope and connects as first electrode Touch layer, thereby further limit crystal defect.
In addition, added the In that low mole In mixesxGa
1-xN, with the internal quantum of raising active layer, thereby evenly The growth pattern of ground control SQW. Because InxGa
1-xN/In
yGa
1-yThe N superlattice structure is as second electrode contact Layer can reduce operating voltage. As a result, the present invention can advantageously reduce the 3-5 compounds of group based on nitride The crystal defect of light emitting semiconductor device, and the crystallinity of raising GaN GaN base single crystalline layer, thus improve based on nitrogen The Performance And Reliability of the 3-5 compound semiconductor luminescent device of compound.
Claims (32)
1. 3-5 compound semiconductor luminescent device based on nitride comprises:
Substrate;
Resilient coating on described substrate;
The GaN layer that a In on described resilient coating mixes;
In on the GaN layer that a described In mixes
xGa
1-xN/In
yGa
1-yThe N super lattice structure layers;
At described In
xGa
1-xN/In
yGa
1-yFirst contact electrode layer on the N super lattice structure layers;
Active layer on described first contact electrode layer;
The GaN layer that the 2nd In on described active layer mixes;
GaN layer on the GaN layer that described the 2nd In mixes; With
Second contact electrode layer on described GaN layer.
2. according to the device of claim 1, wherein said resilient coating comprises and is selected from InGaN/GaN superlattice structure, In
xGa
1-xN/GaN structure and Al
xIn
yGa
1-x, yN/In
xGa
1-xOne of them of N/GaN structure.
3. according to the device of claim 1, wherein said In
xGa
1-xN/In
yGa
1-yThe N super lattice structure layers is formed on the GaN layer of described In doping.
4. according to the device of claim 1, wherein said first contact electrode layer comprises the GaN layer of Si/In codope.
5. according to the device of claim 1, wherein said active layer comprises list or multi-quantum pit structure.
6. according to the device of claim 5, wherein said active layer comprises the In that low mole In mixes
xGa
1-xN layer and In
yGa
1-yN trap layer and In
zGa
1-zThe N barrier layer.
7. according to the device of claim 6, the In that wherein said low mole In mixes
xGa
1-xThe N layer has less than described In
zGa
1-zThe In content of N barrier layer.
8. according to the device of claim 6, the In that wherein said low mole In mixes
xGa
1-xN layer and In
yGa
1-yN trap layer and In
zGa
1-zThe In content that the N barrier layer has is expressed as respectively: 0＜x＜0.05,0＜y＜0.3 and 0＜z＜0.1.
9. according to the device of claim 6, the In that wherein said low mole In mixes
xGa
1-xThe N layer has the helical surface configuration.
10. according to the device of claim 6, the In that wherein said low mole In mixes
xGa
1-xThe N layer has the helical surface configuration, and wherein said helical surface configuration extends to described In
zGa
1-zThe surface of N barrier layer.
11. according to the device of claim 1, wherein said second contact electrode layer is a n type contact electrode layer.
12. according to the device of claim 1, wherein said second contact electrode layer comprises In
xGa
1-xN/In
yGa
1-yThe N superlattice structure.
13. the 3-5 compound semiconductor luminescent device based on nitride comprises:
Substrate;
Resilient coating on described substrate;
The GaN layer that a In on described resilient coating mixes;
First contact electrode layer on the GaN layer that a described In mixes;
Active layer on described first contact electrode layer;
The GaN layer that the 2nd In on described active layer mixes;
GaN layer on the GaN layer that described the 2nd In mixes; With
Second contact electrode layer on described GaN layer.
14. according to the device of claim 13, wherein said resilient coating comprises and is selected from InGaN/GaN superlattice structure, In
xGa
1-xN/GaN structure and Al
xIn
yGa
1-x, yN/In
xGa
1-xOne of them of N/GaN structure.
15. according to the device of claim 13, wherein said first contact electrode layer comprises the GaN layer of Si/In codope.
16. according to the device of claim 13, wherein said active layer comprises list or multi-quantum pit structure.
17. according to the device of claim 16, wherein said active layer comprises the In that low mole In mixes
xGa
1-xN layer and In
yGa
1-yN trap layer and In
zGa
1-zThe N barrier layer.
18. according to the device of claim 17, the In that wherein said low mole In mixes
xGa
1-xThe N layer has less than described In
zGa
1-zThe In content of N barrier layer.
19. according to the device of claim 17, the In that wherein said low mole In mixes
xGa
1-xN layer and In
yGa
1-yN trap layer and In
zGa
1-zThe In content that the N barrier layer has is expressed as respectively: 0＜x＜0.05,0＜y＜0.3 and 0＜z＜0.1.
20. according to the device of claim 17, the In that wherein said low mole In mixes
xGa
1-xThe N layer has the helical surface configuration.
21. according to the device of claim 17, the In that wherein said low mole In mixes
xGa
1-xThe N layer has the helical surface configuration, and wherein said helical surface configuration extends to described In
zGa
1-zThe surface of N barrier layer.
22. according to the device of claim 13, wherein said second contact electrode layer is a n type contact electrode layer.
23. according to the device of claim 13, wherein said second contact electrode layer comprises In
xGa
1-xN/In
yGa
1-yThe N superlattice structure.
24. the 3-5 compound semiconductor luminescent device based on nitride comprises:
Substrate;
Resilient coating on described substrate;
The GaN layer that a In on described resilient coating mixes;
In on the GaN layer that a described In mixes
xGa
1-xN/In
yGa
1-yThe N super lattice structure layers;
At described In
xGa
1-xN/In
yGa
1-yFirst contact electrode layer on the N super lattice structure layers;
Active layer on described first contact electrode layer;
GaN layer on described active layer; With
Second contact electrode layer on described GaN layer.
25. according to the device of claim 24, wherein said resilient coating comprises and is selected from InGaN/GaN superlattice structure, In
xGa
1-xN/GaN structure and Al
xIn
yGa
1-x, yN/In
xGa
1-xOne of them of N/GaN structure, wherein said In
xGa
1-xN/In
yGa
1-yThe N super lattice structure layers is formed on the described resilient coating.
26. according to the device of claim 24, wherein said first contact electrode layer comprises the GaN layer of Si/In codope.
27. according to the device of claim 24, wherein said active layer comprises list or multi-quantum pit structure.
28. according to the device of claim 27, wherein said active layer comprises the In that low mole In mixes
xGa
1-xN layer and In
yGa
1-yN trap layer and In
zGa
1-zThe N barrier layer.
29. according to the device of claim 28, the In that wherein said low mole In mixes
xGa
1-xThe N layer has less than described In
zGa
1-zThe In content of N barrier layer.
30. according to the device of claim 28, the In that wherein said low mole In mixes
xGa
1-xN layer and In
yGa
1-yN trap layer and In
zGa
1-zThe In content that the N barrier layer has is expressed as respectively: 0＜x＜0.05,0＜y＜0.3 and 0＜z＜0.1.
31. according to the device of claim 24, wherein said second contact electrode layer is a n type contact electrode layer.
32. according to the device of claim 24, wherein said second contact electrode layer comprises In
xGa
1-xN/In
yGa
1-yThe N superlattice structure.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1020030041409 | 2003-06-25 | ||
| KR10-2003-0041409A KR100525545B1 (en) | 2003-06-25 | 2003-06-25 | Nitride semiconductor LED and fabrication method for thereof |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN200710196586.3A Division CN101179106B (en) | 2003-06-25 | 2004-06-21 | A light emitting device using nitride semiconductor and fabrication method of the same |
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| Publication Number | Publication Date |
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| CN1698212A CN1698212A (en) | 2005-11-16 |
| CN100468793C true CN100468793C (en) | 2009-03-11 |
Family
ID=36165438
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|---|---|---|---|
| CNB2004800003288A Expired - Fee Related CN100468793C (en) | 2003-06-25 | 2004-06-21 | Light emitting device using nitride semiconductor and fabrication method of the same |
| CN200710196586.3A Expired - Fee Related CN101179106B (en) | 2003-06-25 | 2004-06-21 | A light emitting device using nitride semiconductor and fabrication method of the same |
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Country Status (7)
| Country | Link |
|---|---|
| US (2) | US7193236B2 (en) |
| EP (1) | EP1636858B1 (en) |
| JP (2) | JP2006510234A (en) |
| KR (1) | KR100525545B1 (en) |
| CN (2) | CN100468793C (en) |
| DE (1) | DE202004021874U1 (en) |
| WO (1) | WO2004114421A1 (en) |
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|---|---|---|---|---|
| CN107464863A (en) * | 2012-10-09 | 2017-12-12 | 佳能株式会社 | Nitride semiconductor photogenerator and preparation method thereof |
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2003
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-
2004
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- 2004-06-21 CN CNB2004800003288A patent/CN100468793C/en not_active Expired - Fee Related
- 2004-06-21 JP JP2005518142A patent/JP2006510234A/en active Pending
- 2004-06-21 US US10/517,819 patent/US7193236B2/en not_active Expired - Lifetime
- 2004-06-21 EP EP04737100.0A patent/EP1636858B1/en not_active Expired - Lifetime
- 2004-06-21 WO PCT/KR2004/001480 patent/WO2004114421A1/en active Application Filing
- 2004-06-21 CN CN200710196586.3A patent/CN101179106B/en not_active Expired - Fee Related
-
2005
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107464863A (en) * | 2012-10-09 | 2017-12-12 | 佳能株式会社 | Nitride semiconductor photogenerator and preparation method thereof |
| CN107464863B (en) * | 2012-10-09 | 2020-02-11 | 佳能株式会社 | Nitride semiconductor light emitting device and method for manufacturing the same |
Also Published As
| Publication number | Publication date |
|---|---|
| CN101179106B (en) | 2013-01-23 |
| US20050236631A1 (en) | 2005-10-27 |
| KR20050000846A (en) | 2005-01-06 |
| EP1636858A1 (en) | 2006-03-22 |
| EP1636858B1 (en) | 2016-11-16 |
| JP2006510234A (en) | 2006-03-23 |
| EP1636858A4 (en) | 2007-01-24 |
| CN101179106A (en) | 2008-05-14 |
| CN1698212A (en) | 2005-11-16 |
| US7691657B2 (en) | 2010-04-06 |
| KR100525545B1 (en) | 2005-10-31 |
| US20060081831A1 (en) | 2006-04-20 |
| DE202004021874U1 (en) | 2012-01-18 |
| US7193236B2 (en) | 2007-03-20 |
| WO2004114421A1 (en) | 2004-12-29 |
| JP2008182284A (en) | 2008-08-07 |
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