CN104300047B - A kind of LED structure of Si bases GaN and preparation method thereof - Google Patents
A kind of LED structure of Si bases GaN and preparation method thereof Download PDFInfo
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- CN104300047B CN104300047B CN201410535513.2A CN201410535513A CN104300047B CN 104300047 B CN104300047 B CN 104300047B CN 201410535513 A CN201410535513 A CN 201410535513A CN 104300047 B CN104300047 B CN 104300047B
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- H—ELECTRICITY
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- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
- H01L33/0075—Processes for devices with an active region comprising only III-V compounds comprising nitride compounds
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- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/04—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
- H01L33/06—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
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- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of group III and group V of the periodic system
- H01L33/32—Materials of the light emitting region containing only elements of group III and group V of the periodic system containing nitrogen
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Abstract
A kind of LED structure of Si bases GaN and preparation method thereof, its structure includes Si substrates, the first high-temperature AlN, content gradually variational AlGaN or AlN/GaN superlattices, the second high-temperature AlN, GaN non-doped layers, p-type contact layer, high temperature p-type GaN layer, P-type electron barrier layer, multiple quantum well layer, N-type GaN layer successively；First high-temperature AlN, content gradually variational AlGaN or AlN/GaN superlattices, the sandwich structure cushion of the composition of the second high-temperature AlN 4.Sandwich buffer layer structure alleviates the lattice mismatch and thermal mismatching between structural material and Si substrates in the form of sandwich of layers forms crackle in the present invention, simultaneously after substrate desquamation, the diffusing reflection area of light is formed so as to effectively improve the luminous efficiency of gallium nitride based light emitting diode on p-type GaN surfaces.
Description
Technical field
The present invention relates to LED (Light Emitting Diode, light emitting diode) manufactures field, in particular relate to
And a kind of Si (silicon) underlayer nitriding gallium GaN base LED structure and preparation method thereof.
Background technology
This emerging concept of energy-conserving and environment-protective is also in LED (Light Emitting Diode, hair since with entrance 21 century
Optical diode) industry starts to warm up.And the White light LED technology of device has also been obtained rapidly based on GaN (gallium nitride) bases LED
Development.Reached more than 130 lumens/watts using GaN blue-light LED chips as the white light LEDs list light source efficiency of excitaton source, much
The light efficiency of common energy-saving lamp is exceeded, LED technology has started to enter general illumination market comprehensively.With GaN base LED ranges of application
Further expansion, requirement to LED component luminous efficiency also more and more higher, various new epitaxy methods, new chip manufacturing
Technique, new device architecture are constantly weeded out the old and bring forth the new, or lift the utilization ratio of existing structure, and constantly lifting is reached with this
GaN LED light extraction efficiencies and the purpose for going out light characteristic.
At present, in the prior art, a kind of method of main raising light extraction efficiency is to prepare one layer of hair in LED most surfaces
The surface of change is reducing the total reflection of GaN material and Air Interface.However it is necessary that extra recipe step.For vertical junction
The LED of structure, processing step is just more cumbersome.
The content of the invention
In view of this, the invention provides a kind of Si (silicon) substrate GaN-based LED structure and preparation method thereof, served as a contrast using Si
The crackle of big lattice mismatch and thermal mismatching formed in cushion between bottom and GaN, as the diffusing reflection area of LED light extractions,
To reach the purpose of the luminous efficiency for improving gallium nitride based light emitting diode.
To achieve the above object, the present invention provides following technical scheme, a kind of silicon substrate gallium nitride based light emitting diode LED
Structure, its epitaxial structure includes Si substrates 1, the first high-temperature AlN 2, content gradually variational AlGaN or AlN/GaN superlattices 3, the successively
Two high-temperature AlNs 4, GaN non-doped layers 5, p-type contact layer 6, high temperature p-type GaN layer 7, P-type electron barrier layer 8, multiple quantum well layer 9, N
Type GaN layer 10；First high-temperature AlN 2, content gradually variational AlGaN or AlN/GaN superlattices 3, the three of the composition of the second high-temperature AlN 4
Mingzhi's textured buffer layers.
A kind of silicon substrate gallium nitride based light emitting diode LED structure preparation method, its epitaxial structure genesis sequence includes Si
Substrate 1, the first high-temperature AlN 2, content gradually variational AlGaN or AlN/GaN superlattices 3, the second high-temperature AlN 4, GaN non-doped layers 5, P
Type contact layer 6, high temperature p-type GaN layer 7, P-type electron barrier layer 8, multiple quantum well layer 9, N-type GaN layer 10；First high temperature
AlN2, content gradually variational AlGaN or AlN/GaN superlattices 3, the sandwich structure cushion of the composition of the second high-temperature AlN 4.
The growth thickness of first high-temperature AlN 2 is 60-100nm, and growth temperature is 1050-1150 DEG C, growth pressure 50-
200torr。
Two growth conditions up and down in sandwich structure are consistent.The Al groups of the graded component AlGaN of sandwich layer
Dividing has 1 gradual change to 0, or AlN/GaN superlattices parameter is 2nm/2nm, 20-30 cycle.Sandwich of layers gross thickness 1um with
It is interior.
The described thickness of GaN non-doped layers 5 is 1-1.2 μm, and between 1000-1200 DEG C, pressure is in 100- for growth temperature
Between 600Torr, V/III than being 100-3000.
The described thickness of p-type contact layer 6 is 5-20nm, and between 850-1050 DEG C, growth time is 1- to growth temperature
10min, between 100-500Torr, V/III than being 1000-20000 for pressure.
Between 850-950 DEG C, growth time is 5-30min to the described growth temperature of high temperature p-type GaN layer 7, and pressure exists
Between 100-500Torr, V/III than being 300-5000.
The described growth thickness of P-type electron barrier layer 8 is p-type AlGaInN layer of 20-70nm, and growth temperature is in 700-
Between 1100 DEG C, between 100-600Torr, V/III than being 100-3000 for pressure；
Described multiple quantum well layer 9 includes the successively overlapping quantum well structures of 3-15, the quantum well structure by
InxGa1-xN(0<x<1) potential well layer and GaN barrier layers grow form successively, and the growth temperature of the InxGa1-xN potential well layers exists
Between 720-820 DEG C, between 100-500Torr, V/III than being 300-5000, and thickness is between 2-5nm for pressure.
The described thickness of N-type GaN layer 10 is 1.2-1.5 μm, and between 1000-1200 DEG C, pressure is in 100- for growth temperature
Between 600Torr, V/III than being 100-3000；Sandwich buffer layer structure needs stress relaxation to form crackle last.
The gallium nitride based light emitting diode LED of the Si substrates 1 and growing method are with high-purity hydrogen (H2) or nitrogen (N2) conduct
Carrier gas, with trimethyl gallium (TMGa), triethyl-gallium (TEGa) and ammonia (NH3) respectively as Ga and N sources, with silane (SiH4) and
Two luxuriant magnesium (CP2Mg) respectively as N, P-type dopant.
Compared with disclosed technology, there is advantages below in the present invention：Sandwich buffer layer structure is with sandwich of layers in the present invention
The form for forming crackle alleviates the lattice mismatch and thermal mismatching between structural material and Si substrates, at the same substrate desquamation it
Afterwards, the diffusing reflection area of light is formed on p-type GaN surfaces so as to effectively improve the luminous efficiency of gallium nitride based light emitting diode.PN-
GaN structures are inverted growth, are conducive to the treatment of p-type GaN electrodes after transfer substrate upside-down mounting.
Brief description of the drawings
Fig. 1 is LED epitaxial structure schematic diagram of the invention.
Fig. 2 is inverted structure schematic diagram.
In figure：1st, Si substrates, 2, high-temperature AlN, 3, content gradually variational AlGaN or AlN/GaN superlattices, the 4, second high-temperature AlN,
5th, GaN non-doped layers, 6, p-type contact layer, 7, high temperature p-type GaN layer, 8, P-type electron barrier layer, 9, multiple quantum well layer, 10, N-type
GaN layer, 11, P electrode.
Specific embodiment
As shown in Figure 1-2, a kind of silicon substrate gallium nitride based light emitting diode LED structure, its epitaxial structure includes Si successively
Substrate 1, the first high-temperature AlN 2, content gradually variational AlGaN or AlN/GaN superlattices 3, the second high-temperature AlN 4, GaN non-doped layers 5, P
Type contact layer 6, high temperature p-type GaN layer 7, P-type electron barrier layer 8, multiple quantum well layer 9, N-type GaN layer 10；First high temperature
AlN2, content gradually variational AlGaN or AlN/GaN superlattices 3, the sandwich structure cushion of the composition of the second high-temperature AlN 4；
A kind of silicon substrate gallium nitride based light emitting diode LED structure preparation method, its epitaxial structure genesis sequence includes Si
Substrate 1, the first high-temperature AlN 2, content gradually variational AlGaN or AlN/GaN superlattices 3, the second high-temperature AlN 4, GaN non-doped layers 5, P
Type contact layer 6, high temperature p-type GaN layer 7, P-type electron barrier layer 8, multiple quantum well layer 9, N-type GaN layer 10；First high temperature
AlN2, content gradually variational AlGaN or AlN/GaN superlattices 3, the sandwich structure cushion of the composition of the second high-temperature AlN 4.
The growth thickness of first high-temperature AlN 2 is 60-100nm, and growth temperature is 1050-1150 DEG C, growth pressure 50-
200torr。
Two growth conditions up and down in sandwich structure are consistent.The Al groups of the graded component AlGaN of sandwich layer
Dividing has 1 gradual change to 0, or AlN/GaN superlattices parameter is 2nm/2nm, 20-30 cycle.Sandwich of layers gross thickness 1um with
It is interior.
The described thickness of GaN non-doped layers 5 is 1-1.2 μm, and between 1000-1200 DEG C, pressure is in 100- for growth temperature
Between 600Torr, V/III than being 100-3000.
The described thickness of p-type contact layer 6 is 5-20nm, and between 850-1050 DEG C, growth time is 1- to growth temperature
10min, between 100-500Torr, V/III than being 1000-20000 for pressure.
Between 850-950 DEG C, growth time is 5-30min to the described growth temperature of high temperature p-type GaN layer 7, and pressure exists
Between 100-500Torr, V/III than being 300-5000.
The described growth thickness of P-type electron barrier layer 8 is p-type AlGaInN layer of 20-70nm, and growth temperature is in 700-
Between 1100 DEG C, between 100-600Torr, V/III than being 100-3000 for pressure；
Described multiple quantum well layer 9 includes the successively overlapping quantum well structures of 3-15, the quantum well structure by
InxGa1-xN(0<x<1) potential well layer and GaN barrier layers grow form successively, and the growth temperature of the InxGa1-xN potential well layers exists
Between 720-820 DEG C, between 100-500Torr, V/III than being 300-5000, and thickness is between 2-5nm for pressure.
The described thickness of N-type GaN layer 10 is 1.2-1.5 μm, and between 1000-1200 DEG C, pressure is in 100- for growth temperature
Between 600Torr, V/III than being 100-3000；Sandwich buffer layer structure needs stress relaxation to form crackle last.
The gallium nitride based light emitting diode LED of the Si substrates 1 and growing method are with high-purity hydrogen (H2) or nitrogen (N2) conduct
Carrier gas, with trimethyl gallium (TMGa), triethyl-gallium (TEGa) and ammonia (NH3) respectively as Ga and N sources, with silane (SiH4) and
Two luxuriant magnesium (CP2Mg) respectively as N, P-type dopant.
Inverted growth structure is conducive to the treatment of P electrode 11 in inverted structure.
General principle of the invention, principal character and advantages of the present invention has been shown and described above.The technology of the industry
Personnel it should be appreciated that the present invention is not limited to the above embodiments, simply explanation described in above-described embodiment and specification this
The principle of invention, without departing from the spirit and scope of the present invention, various changes and modifications of the present invention are possible, these changes
Change and improvement all fall within the protetion scope of the claimed invention.Claimed scope of the invention by appending claims and
Its equivalent thereof.
Claims (7)
1. a kind of silicon substrate gallium nitride based light emitting diode structure, it is characterised in that:The structure successively include Si substrates (1), by
First high-temperature AlN (2), content gradually variational AlGaN or AlN/GaN superlattices (3), the sandwich structure of the second high-temperature AlN (4) composition
Cushion, GaN non-doped layers (5), p-type contact layer (6), high temperature p-type GaN layer (7), P-type electron barrier layer (8), MQW
Layer (9), N-type GaN layer (10).
2. structure according to claim 1, it is characterised in that：High-temperature AlN growth thickness is 60-100nm, and growth temperature is
1050-1150 DEG C, growth pressure 50-200torr；Two growth conditions up and down in sandwich structure are consistent；Sandwich
The Al components of the graded component AlGaN of layer are by 1 gradual change to 0, or AlN/GaN superlattices parameter is 2nm/2nm, 20-30 week
Phase；Sandwich of layers gross thickness is within 1um；Described GaN non-doped layers (5) thickness is 1-1.2 μm, and growth temperature is in 1000-
Between 1200 DEG C, between 100-600Torr, V/III than being 100-3000 for pressure；Described p-type contact layer (6) thickness is 5-
20nm, between 850-1050 DEG C, growth time is 1-10min to growth temperature, and between 100-500Torr, V/III compares pressure
It is 1000-20000；Between 850-950 DEG C, growth time is 5-30min to described high temperature p-type GaN layer (7) growth temperature,
Between 100-500Torr, V/III than being 300-5000 for pressure；Described P-type electron barrier layer (8) is 20- for growth thickness
P-type AlGaInN layers of 70nm, between 700-1100 DEG C, between 100-600Torr, V/III ratio is pressure growth temperature
100‐3000；Described multiple quantum well layer (9) includes the successively overlapping quantum well structures of 3-15, the quantum well structure by
InxGa(1‐x)N(0<x<1) potential well layer and GaN barrier layers grow form successively, the InxGa(1‐x)The growth temperature of N potential well layers exists
Between 720-820 DEG C, between 100-500Torr, V/III than being 300-5000, and thickness is between 2-5nm for pressure；Described N
Type GaN layer (10) thickness be 1.2-1.5 μm, growth temperature between 1000-1200 DEG C, pressure between 100-600Torr,
V/III than being 100-3000；Described sandwich structure cushion needs stress relaxation to form crackle last.
3. structure according to claim 1, it is characterised in that：Silicon substrate (1) the gallium nitride based light emitting diode structure
Growth, be with high-purity hydrogen (H2) or nitrogen (N2) as carrier gas, with trimethyl gallium (TMGa), triethyl-gallium (TEGa) and ammonia
Gas (NH3) respectively as Ga and N sources, with silane (SiH4) and two luxuriant magnesium (CP2Mg) respectively as N, P-type dopant.
4. structure according to claim 1, it is characterised in that the Si substrates include insulation or highly doped conductive Si.
5. structure according to claim 1, it is characterised in that need to carry out substrate desquamation, and member-retaining portion when preparing LED
Sandwich structure cushion is used as diffusing reflection output optical zone.
6. the structure according to any one of claim 1-5 claim, it is characterised in that the final LED for preparing is vertical
Straight structure.
7. structure according to claim 6, it is characterised in that p-type GaN electrodes are the upper space of vertical stratification.
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| CN106098882B (en) * | 2016-07-25 | 2020-08-18 | 华灿光电（浙江）有限公司 | Light emitting diode epitaxial wafer and preparation method thereof |
| CN109904286B (en) * | 2019-01-18 | 2021-08-06 | 华灿光电（浙江）有限公司 | Epitaxial wafer of light emitting diode and preparation method thereof |
| CN112531015B (en) * | 2020-12-02 | 2023-09-22 | 北京大学东莞光电研究院 | Epitaxial structure of low-loss gallium nitride radio-frequency material and preparation method |
| CN112786746B (en) * | 2020-12-31 | 2024-02-13 | 华灿光电（浙江）有限公司 | Epitaxial wafer of light-emitting diode and preparation method thereof |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102969341A (en) * | 2012-11-09 | 2013-03-13 | 中国电子科技集团公司第五十五研究所 | Nitride high electronic mobility transistor extension structure of component gradually-changed ALyGal-yN buffer layer |
| CN103035790A (en) * | 2012-12-13 | 2013-04-10 | 华灿光电股份有限公司 | Light emitting diode epitaxial wafer and preparation method thereof |
| CN103346217A (en) * | 2013-07-10 | 2013-10-09 | 合肥彩虹蓝光科技有限公司 | Method for designing quantum barrier used for enhancing light emitting diode (LED) brightness |
| CN103887381A (en) * | 2014-03-28 | 2014-06-25 | 西安神光皓瑞光电科技有限公司 | Growth method for improving crystal quality of ultraviolet LED epitaxial materials |
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| KR100525545B1 (en) * | 2003-06-25 | 2005-10-31 | 엘지이노텍 주식회사 | Nitride semiconductor LED and fabrication method for thereof |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102969341A (en) * | 2012-11-09 | 2013-03-13 | 中国电子科技集团公司第五十五研究所 | Nitride high electronic mobility transistor extension structure of component gradually-changed ALyGal-yN buffer layer |
| CN103035790A (en) * | 2012-12-13 | 2013-04-10 | 华灿光电股份有限公司 | Light emitting diode epitaxial wafer and preparation method thereof |
| CN103346217A (en) * | 2013-07-10 | 2013-10-09 | 合肥彩虹蓝光科技有限公司 | Method for designing quantum barrier used for enhancing light emitting diode (LED) brightness |
| CN103887381A (en) * | 2014-03-28 | 2014-06-25 | 西安神光皓瑞光电科技有限公司 | Growth method for improving crystal quality of ultraviolet LED epitaxial materials |
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