JP2006510234A5 - - Google Patents

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Publication number
JP2006510234A5
JP2006510234A5 JP2005518142A JP2005518142A JP2006510234A5 JP 2006510234 A5 JP2006510234 A5 JP 2006510234A5 JP 2005518142 A JP2005518142 A JP 2005518142A JP 2005518142 A JP2005518142 A JP 2005518142A JP 2006510234 A5 JP2006510234 A5 JP 2006510234A5
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JP
Japan
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layer
compound semiconductor
nitride
electrode contact
gan
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JP2005518142A
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English (en)
Japanese (ja)
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JP2006510234A (ja
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Priority claimed from KR10-2003-0041409A external-priority patent/KR100525545B1/ko
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Publication of JP2006510234A publication Critical patent/JP2006510234A/ja
Publication of JP2006510234A5 publication Critical patent/JP2006510234A5/ja
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JP2005518142A 2003-06-25 2004-06-21 窒化物半導体の発光素子及びその製造方法 Pending JP2006510234A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR10-2003-0041409A KR100525545B1 (ko) 2003-06-25 2003-06-25 질화물 반도체 발광소자 및 그 제조방법
PCT/KR2004/001480 WO2004114421A1 (en) 2003-06-25 2004-06-21 A light emitting device using nitride semiconductor and fabrication method of the same

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2008111431A Division JP2008182284A (ja) 2003-06-25 2008-04-22 窒化物半導体の発光素子及びその製造方法

Publications (2)

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JP2006510234A JP2006510234A (ja) 2006-03-23
JP2006510234A5 true JP2006510234A5 (enExample) 2009-01-08

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JP2005518142A Pending JP2006510234A (ja) 2003-06-25 2004-06-21 窒化物半導体の発光素子及びその製造方法
JP2008111431A Pending JP2008182284A (ja) 2003-06-25 2008-04-22 窒化物半導体の発光素子及びその製造方法

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JP2008111431A Pending JP2008182284A (ja) 2003-06-25 2008-04-22 窒化物半導体の発光素子及びその製造方法

Country Status (7)

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US (2) US7193236B2 (enExample)
EP (1) EP1636858B1 (enExample)
JP (2) JP2006510234A (enExample)
KR (1) KR100525545B1 (enExample)
CN (2) CN100468793C (enExample)
DE (1) DE202004021874U1 (enExample)
WO (1) WO2004114421A1 (enExample)

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