CN100466312C - 半导体发光器件制造方法 - Google Patents
半导体发光器件制造方法 Download PDFInfo
- Publication number
- CN100466312C CN100466312C CNB2007100047826A CN200710004782A CN100466312C CN 100466312 C CN100466312 C CN 100466312C CN B2007100047826 A CNB2007100047826 A CN B2007100047826A CN 200710004782 A CN200710004782 A CN 200710004782A CN 100466312 C CN100466312 C CN 100466312C
- Authority
- CN
- China
- Prior art keywords
- lead frame
- metal body
- led chip
- light emitting
- emitting device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Images
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/85—Packages
- H10H20/858—Means for heat extraction or cooling
- H10H20/8582—Means for heat extraction or cooling characterised by their shape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45144—Gold (Au) as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/85—Packages
- H10H20/858—Means for heat extraction or cooling
- H10H20/8585—Means for heat extraction or cooling being an interconnection
Landscapes
- Led Device Packages (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2003000216A JP3910144B2 (ja) | 2003-01-06 | 2003-01-06 | 半導体発光装置およびその製造方法 |
| JP2003000216 | 2003-01-06 |
Related Parent Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNB2003101205693A Division CN1306626C (zh) | 2003-01-06 | 2003-12-12 | 半导体发光器件 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1992365A CN1992365A (zh) | 2007-07-04 |
| CN100466312C true CN100466312C (zh) | 2009-03-04 |
Family
ID=32708764
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNB2007100047826A Expired - Fee Related CN100466312C (zh) | 2003-01-06 | 2003-12-12 | 半导体发光器件制造方法 |
| CNB2003101205693A Expired - Fee Related CN1306626C (zh) | 2003-01-06 | 2003-12-12 | 半导体发光器件 |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNB2003101205693A Expired - Fee Related CN1306626C (zh) | 2003-01-06 | 2003-12-12 | 半导体发光器件 |
Country Status (3)
| Country | Link |
|---|---|
| US (1) | US7012277B2 (enExample) |
| JP (1) | JP3910144B2 (enExample) |
| CN (2) | CN100466312C (enExample) |
Families Citing this family (63)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4174823B2 (ja) * | 2003-03-27 | 2008-11-05 | サンケン電気株式会社 | 半導体発光装置 |
| JP2006049442A (ja) | 2004-08-02 | 2006-02-16 | Sharp Corp | 半導体発光装置およびその製造方法 |
| CN100340008C (zh) * | 2004-09-30 | 2007-09-26 | 中国科学院半导体研究所 | 背孔结构氮化镓基发光二极管的制作方法 |
| WO2006065007A1 (en) * | 2004-12-16 | 2006-06-22 | Seoul Semiconductor Co., Ltd. | Leadframe having a heat sink supporting ring, fabricating method of a light emitting diodepackage using the same and light emitting diodepackage fabbricated by the method |
| US20060131734A1 (en) * | 2004-12-17 | 2006-06-22 | Texas Instruments Incorporated | Multi lead frame power package |
| JP4606302B2 (ja) * | 2005-01-27 | 2011-01-05 | 京セラ株式会社 | 発光装置 |
| JP4606382B2 (ja) * | 2005-01-27 | 2011-01-05 | 京セラ株式会社 | 発光装置 |
| KR100638721B1 (ko) * | 2005-01-28 | 2006-10-30 | 삼성전기주식회사 | 수지 흐름 개선용 리드 프레임 구조를 갖는 측면형발광다이오드 패키지 |
| KR100631901B1 (ko) * | 2005-01-31 | 2006-10-11 | 삼성전기주식회사 | Led 패키지 프레임 및 이를 채용하는 led 패키지 |
| JP2006237464A (ja) * | 2005-02-28 | 2006-09-07 | Matsushita Electric Ind Co Ltd | 半導体発光装置 |
| JP4948777B2 (ja) * | 2005-03-16 | 2012-06-06 | ローム株式会社 | 光通信モジュール |
| KR100945621B1 (ko) * | 2005-03-07 | 2010-03-04 | 로무 가부시키가이샤 | 광 통신 모듈 및 그 제조 방법 |
| JP4794874B2 (ja) * | 2005-03-07 | 2011-10-19 | ローム株式会社 | 光通信モジュール |
| US8076680B2 (en) * | 2005-03-11 | 2011-12-13 | Seoul Semiconductor Co., Ltd. | LED package having an array of light emitting cells coupled in series |
| KR100593935B1 (ko) | 2005-03-24 | 2006-06-30 | 삼성전기주식회사 | 발광 다이오드 패키지 및 그 제조 방법 |
| KR100690313B1 (ko) * | 2005-04-28 | 2007-03-09 | (주) 아모센스 | 전자부품 패키지 |
| KR100690314B1 (ko) | 2005-04-28 | 2007-03-09 | (주) 아모센스 | 전자부품 패키지 |
| KR100662844B1 (ko) | 2005-06-10 | 2007-01-02 | 삼성전자주식회사 | Led 패키지 및 그 제조방법과 이를 이용한 led어레이 모듈 |
| CN100565948C (zh) | 2005-06-30 | 2009-12-02 | 松下电工株式会社 | 发光装置 |
| JP5054331B2 (ja) * | 2005-06-30 | 2012-10-24 | パナソニック株式会社 | Ledを用いた照明器具 |
| KR100632003B1 (ko) * | 2005-08-08 | 2006-10-09 | 삼성전기주식회사 | 열전달부에 오목부가 형성된 led 패키지 |
| US20070063213A1 (en) * | 2005-09-21 | 2007-03-22 | Lighthouse Technology Co., Ltd. | LED package |
| JP5038623B2 (ja) * | 2005-12-27 | 2012-10-03 | 株式会社東芝 | 光半導体装置およびその製造方法 |
| US8044412B2 (en) | 2006-01-20 | 2011-10-25 | Taiwan Semiconductor Manufacturing Company, Ltd | Package for a light emitting element |
| JP2007208061A (ja) * | 2006-02-02 | 2007-08-16 | Sharp Corp | 半導体発光素子,その製造方法,半導体発光素子アセンブリ |
| US7365407B2 (en) * | 2006-05-01 | 2008-04-29 | Avago Technologies General Ip Pte Ltd | Light emitting diode package with direct leadframe heat dissipation |
| US9502624B2 (en) | 2006-05-18 | 2016-11-22 | Nichia Corporation | Resin molding, surface mounted light emitting apparatus and methods for manufacturing the same |
| CN100552992C (zh) * | 2006-06-14 | 2009-10-21 | 宏齐科技股份有限公司 | 高功率发光元件封装的工艺 |
| US7804105B2 (en) | 2006-06-27 | 2010-09-28 | Seoul Semiconductor Co., Ltd. | Side view type LED package |
| KR100904152B1 (ko) * | 2006-06-30 | 2009-06-25 | 서울반도체 주식회사 | 히트싱크 지지부를 갖는 리드프레임, 그것을 사용한 발광다이오드 패키지 제조방법 및 그것에 의해 제조된 발광다이오드 패키지 |
| TWM309757U (en) * | 2006-09-19 | 2007-04-11 | Everlight Electronics Co Ltd | Side view LED package structure |
| KR100730771B1 (ko) * | 2006-10-11 | 2007-06-21 | 주식회사 쎄라텍 | 발광소자용 패키지 |
| KR100788931B1 (ko) | 2006-10-27 | 2007-12-27 | (주) 아모센스 | 전자부품 패키지 |
| JP5380774B2 (ja) | 2006-12-28 | 2014-01-08 | 日亜化学工業株式会社 | 表面実装型側面発光装置及びその製造方法 |
| TWI325186B (en) * | 2007-01-19 | 2010-05-21 | Harvatek Corp | Led chip package structure using ceramic material as a substrate |
| JP4960194B2 (ja) * | 2007-10-22 | 2012-06-27 | 電気化学工業株式会社 | 発光素子パッケージ用基板の製造方法および発光素子パッケージ |
| JP5294741B2 (ja) * | 2008-07-14 | 2013-09-18 | 日亜化学工業株式会社 | 樹脂成形体及び表面実装型発光装置並びにそれらの製造方法 |
| DE102008045925A1 (de) * | 2008-09-04 | 2010-03-11 | Osram Opto Semiconductors Gmbh | Optoelektronisches Bauteil und Verfahren zur Herstellung eines optoelektronischen Bauteils |
| EP2348551A2 (en) * | 2008-10-01 | 2011-07-27 | Samsung LED Co., Ltd. | Light-emitting diode package using a liquid crystal polymer |
| KR101007131B1 (ko) | 2008-11-25 | 2011-01-10 | 엘지이노텍 주식회사 | 발광 소자 패키지 |
| KR101047801B1 (ko) * | 2008-12-29 | 2011-07-07 | 엘지이노텍 주식회사 | 발광 디바이스 패키지 및 그 제조방법 |
| JP2010171073A (ja) * | 2009-01-20 | 2010-08-05 | Showa Denko Kk | 発光装置、電気装置および表示装置 |
| WO2010095482A2 (ja) * | 2009-02-20 | 2010-08-26 | 三洋電機株式会社 | 電子部品用基板、発光装置および電子部品用基板の製造方法 |
| US9385285B2 (en) | 2009-09-17 | 2016-07-05 | Koninklijke Philips N.V. | LED module with high index lens |
| EP2346100B1 (en) * | 2010-01-15 | 2019-05-22 | LG Innotek Co., Ltd. | Light emitting apparatus and lighting system |
| US9024350B2 (en) * | 2010-02-08 | 2015-05-05 | Ban P Loh | LED light module |
| US8525213B2 (en) | 2010-03-30 | 2013-09-03 | Lg Innotek Co., Ltd. | Light emitting device having multiple cavities and light unit having the same |
| US8269244B2 (en) * | 2010-06-28 | 2012-09-18 | Cree, Inc. | LED package with efficient, isolated thermal path |
| JP2014029890A (ja) * | 2010-11-19 | 2014-02-13 | Asahi Glass Co Ltd | 発光素子用基板および発光装置 |
| WO2012067203A1 (ja) * | 2010-11-19 | 2012-05-24 | 旭硝子株式会社 | 発光素子用基板および発光装置 |
| WO2012112873A2 (en) * | 2011-02-18 | 2012-08-23 | 3M Innovative Properties Company | Flexible light emitting semiconductor device |
| DE102011101052A1 (de) * | 2011-05-09 | 2012-11-15 | Heraeus Materials Technology Gmbh & Co. Kg | Substrat mit elektrisch neutralem Bereich |
| KR101824011B1 (ko) * | 2011-07-29 | 2018-01-31 | 엘지이노텍 주식회사 | 발광소자 패키지 |
| JP5813467B2 (ja) * | 2011-11-07 | 2015-11-17 | 新光電気工業株式会社 | 基板、発光装置及び基板の製造方法 |
| US10043960B2 (en) | 2011-11-15 | 2018-08-07 | Cree, Inc. | Light emitting diode (LED) packages and related methods |
| US8698291B2 (en) * | 2011-12-15 | 2014-04-15 | Freescale Semiconductor, Inc. | Packaged leadless semiconductor device |
| JP5978631B2 (ja) * | 2012-01-26 | 2016-08-24 | 日亜化学工業株式会社 | 発光装置 |
| US8917010B2 (en) * | 2012-02-02 | 2014-12-23 | Citizen Electronics Co., Ltd. | Lighting device including phosphor layer and light-transmitting layer that is arranged in contact with the phosphor layer to release static charge to substrate |
| JP6147976B2 (ja) * | 2012-09-26 | 2017-06-14 | ローム株式会社 | 発光装置、および、発光ユニットの製造方法 |
| DE102012110261A1 (de) * | 2012-10-26 | 2014-04-30 | Osram Gmbh | Gehäuse für ein optoelektronisches Bauelement und Verfahren zur Herstellung eines Gehäuses |
| US10403792B2 (en) * | 2016-03-07 | 2019-09-03 | Rayvio Corporation | Package for ultraviolet emitting devices |
| US20170356640A1 (en) * | 2016-06-10 | 2017-12-14 | Innotec, Corp. | Illumination assembly including thermal energy management |
| CN111653935A (zh) * | 2020-05-28 | 2020-09-11 | 武汉仟目激光有限公司 | 激光器及其引线封装结构 |
Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0680748B2 (ja) * | 1986-03-31 | 1994-10-12 | 株式会社東芝 | 樹脂封止型半導体装置 |
| US5367196A (en) * | 1992-09-17 | 1994-11-22 | Olin Corporation | Molded plastic semiconductor package including an aluminum alloy heat spreader |
| JPH10125826A (ja) * | 1996-10-24 | 1998-05-15 | Hitachi Ltd | 半導体装置及びその製法 |
| JPH11177129A (ja) * | 1997-12-16 | 1999-07-02 | Rohm Co Ltd | チップ型led、ledランプおよびledディスプレイ |
| JP2000049384A (ja) * | 1998-07-29 | 2000-02-18 | Matsushita Electron Corp | チップ型発光装置 |
| US6066861A (en) * | 1996-09-20 | 2000-05-23 | Siemens Aktiengesellschaft | Wavelength-converting casting composition and its use |
| JP2000216443A (ja) * | 1999-01-25 | 2000-08-04 | Citizen Electronics Co Ltd | 表面実装型発光ダイオ―ド及びその製造方法 |
| US6239487B1 (en) * | 1998-02-11 | 2001-05-29 | Hyundai Electronics Industries Co., Ltd. | Lead frame with heat spreader and semiconductor package therewith |
Family Cites Families (20)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE19621124A1 (de) * | 1996-05-24 | 1997-11-27 | Siemens Ag | Optoelektronischer Wandler und dessen Herstellungsverfahren |
| JPH1146018A (ja) | 1997-07-28 | 1999-02-16 | Citizen Electron Co Ltd | 表面実装型発光ダイオード |
| DE19746893B4 (de) * | 1997-10-23 | 2005-09-01 | Siemens Ag | Optoelektronisches Bauelement mit Wärmesenke im Sockelteil und Verfahren zur Herstellung |
| JP3518843B2 (ja) | 1998-10-13 | 2004-04-12 | 株式会社トクヤマ | メタライズ基板 |
| JP2000058924A (ja) | 1998-08-06 | 2000-02-25 | Shichizun Denshi:Kk | 表面実装型発光ダイオード及びその製造方法 |
| JP4215306B2 (ja) | 1998-08-27 | 2009-01-28 | シチズン電子株式会社 | 半導体のパッケージおよびその製造方法 |
| US6335548B1 (en) * | 1999-03-15 | 2002-01-01 | Gentex Corporation | Semiconductor radiation emitter package |
| DE10033502A1 (de) * | 2000-07-10 | 2002-01-31 | Osram Opto Semiconductors Gmbh | Optoelektronisches Modul, Verfahren zu dessen Herstellung und dessen Verwendung |
| US6561680B1 (en) * | 2000-11-14 | 2003-05-13 | Kelvin Shih | Light emitting diode with thermally conductive structure |
| JP4904623B2 (ja) | 2001-01-29 | 2012-03-28 | 日亜化学工業株式会社 | 光半導体素子 |
| WO2002089221A1 (en) * | 2001-04-23 | 2002-11-07 | Matsushita Electric Works, Ltd. | Light emitting device comprising led chip |
| US20020163001A1 (en) * | 2001-05-04 | 2002-11-07 | Shaddock David Mulford | Surface mount light emitting device package and fabrication method |
| JP2003078219A (ja) | 2001-09-04 | 2003-03-14 | Katsurayama Technol:Kk | 凹みプリント配線板およびその製造方法 |
| US20030058650A1 (en) * | 2001-09-25 | 2003-03-27 | Kelvin Shih | Light emitting diode with integrated heat dissipater |
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| JP4280050B2 (ja) | 2002-10-07 | 2009-06-17 | シチズン電子株式会社 | 白色発光装置 |
| TW578280B (en) * | 2002-11-21 | 2004-03-01 | United Epitaxy Co Ltd | Light emitting diode and package scheme and method thereof |
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-
2003
- 2003-01-06 JP JP2003000216A patent/JP3910144B2/ja not_active Expired - Fee Related
- 2003-12-12 CN CNB2007100047826A patent/CN100466312C/zh not_active Expired - Fee Related
- 2003-12-12 CN CNB2003101205693A patent/CN1306626C/zh not_active Expired - Fee Related
- 2003-12-23 US US10/745,764 patent/US7012277B2/en not_active Expired - Lifetime
Patent Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0680748B2 (ja) * | 1986-03-31 | 1994-10-12 | 株式会社東芝 | 樹脂封止型半導体装置 |
| US5367196A (en) * | 1992-09-17 | 1994-11-22 | Olin Corporation | Molded plastic semiconductor package including an aluminum alloy heat spreader |
| US6066861A (en) * | 1996-09-20 | 2000-05-23 | Siemens Aktiengesellschaft | Wavelength-converting casting composition and its use |
| JPH10125826A (ja) * | 1996-10-24 | 1998-05-15 | Hitachi Ltd | 半導体装置及びその製法 |
| JPH11177129A (ja) * | 1997-12-16 | 1999-07-02 | Rohm Co Ltd | チップ型led、ledランプおよびledディスプレイ |
| US6239487B1 (en) * | 1998-02-11 | 2001-05-29 | Hyundai Electronics Industries Co., Ltd. | Lead frame with heat spreader and semiconductor package therewith |
| JP2000049384A (ja) * | 1998-07-29 | 2000-02-18 | Matsushita Electron Corp | チップ型発光装置 |
| JP2000216443A (ja) * | 1999-01-25 | 2000-08-04 | Citizen Electronics Co Ltd | 表面実装型発光ダイオ―ド及びその製造方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| US20040135156A1 (en) | 2004-07-15 |
| JP2004214436A (ja) | 2004-07-29 |
| CN1518135A (zh) | 2004-08-04 |
| JP3910144B2 (ja) | 2007-04-25 |
| US7012277B2 (en) | 2006-03-14 |
| CN1306626C (zh) | 2007-03-21 |
| CN1992365A (zh) | 2007-07-04 |
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