CN100459219C - 铯释放器及其使用方法 - Google Patents

铯释放器及其使用方法 Download PDF

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Publication number
CN100459219C
CN100459219C CNB028023765A CN02802376A CN100459219C CN 100459219 C CN100459219 C CN 100459219C CN B028023765 A CNB028023765 A CN B028023765A CN 02802376 A CN02802376 A CN 02802376A CN 100459219 C CN100459219 C CN 100459219C
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China
Prior art keywords
cesium
reducing agent
container
release
caesium
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Expired - Lifetime
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CNB028023765A
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English (en)
Chinese (zh)
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CN1531839A (zh
Inventor
C·波菲多
L·托亚
L·凯特尼奥
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J9/00—Apparatus or processes specially adapted for the manufacture, installation, removal, maintenance of electric discharge tubes, discharge lamps, or parts thereof; Recovery of material from discharge tubes or lamps
    • H01J9/02—Manufacture of electrodes or electrode systems
    • H01J9/12—Manufacture of electrodes or electrode systems of photo-emissive cathodes; of secondary-emission electrodes
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24—Vacuum evaporation
    • C23C14/243—Crucibles for source material
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
    • C30B23/02—Epitaxial-layer growth
    • C30B23/06—Heating of the deposition chamber, the substrate or the materials to be evaporated
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B33/00—Electroluminescent light sources
    • H05B33/10—Apparatus or processes specially adapted to the manufacture of electroluminescent light sources
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B33/00—Electroluminescent light sources
    • H05B33/12—Light sources with substantially two-dimensional radiating surfaces
    • H05B33/22—Light sources with substantially two-dimensional radiating surfaces characterised by the chemical or physical composition or the arrangement of auxiliary dielectric or reflective layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/30—Doping active layers, e.g. electron transporting layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/11—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Metallurgy (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Mechanical Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Electroluminescent Light Sources (AREA)
  • Physical Vapour Deposition (AREA)
  • Inorganic Compounds Of Heavy Metals (AREA)
  • Nitrogen And Oxygen Or Sulfur-Condensed Heterocyclic Ring Systems (AREA)
  • Feeding, Discharge, Calcimining, Fusing, And Gas-Generation Devices (AREA)
  • Luminescent Compositions (AREA)
  • Drying Of Gases (AREA)
  • Compounds Of Unknown Constitution (AREA)
  • Laminated Bodies (AREA)
  • Silicates, Zeolites, And Molecular Sieves (AREA)
  • Catalysts (AREA)
CNB028023765A 2001-05-15 2002-05-07 铯释放器及其使用方法 Expired - Lifetime CN100459219C (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
ITMI2001A000995 2001-05-15
IT2001MI000995A ITMI20010995A1 (it) 2001-05-15 2001-05-15 Dispensatori di cesio e processo per il loro uso

Publications (2)

Publication Number Publication Date
CN1531839A CN1531839A (zh) 2004-09-22
CN100459219C true CN100459219C (zh) 2009-02-04

Family

ID=11447659

Family Applications (1)

Application Number Title Priority Date Filing Date
CNB028023765A Expired - Lifetime CN100459219C (zh) 2001-05-15 2002-05-07 铯释放器及其使用方法

Country Status (13)

Country Link
US (2) US6753648B2 (enExample)
EP (1) EP1419542B1 (enExample)
JP (1) JP4087715B2 (enExample)
KR (1) KR100742424B1 (enExample)
CN (1) CN100459219C (enExample)
AT (1) ATE322744T1 (enExample)
AU (1) AU2002309256A1 (enExample)
CA (1) CA2430941C (enExample)
DE (1) DE60210478T2 (enExample)
IT (1) ITMI20010995A1 (enExample)
MY (1) MY132034A (enExample)
TW (1) TWI284001B (enExample)
WO (1) WO2002093664A2 (enExample)

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* Cited by examiner, † Cited by third party
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ITMI20010995A1 (it) * 2001-05-15 2002-11-15 Getters Spa Dispensatori di cesio e processo per il loro uso
WO2002093249A1 (fr) 2001-05-17 2002-11-21 Daikin Industries, Ltd. Materiau optique non lineaire contenant un polymere fluore
ITMI20021904A1 (it) * 2002-09-06 2004-03-07 Getters Spa Elemento accessorio per dispensatori di metalli alcalini
WO2004066338A1 (ja) * 2003-01-17 2004-08-05 Hamamatsu Photonics K.K. アルカリ金属発生剤、アルカリ金属発生器、光電面、二次電子放出面、電子管、光電面の製造方法、二次電子放出面の製造方法及び電子管の製造方法
JPWO2004066337A1 (ja) 2003-01-17 2006-05-18 浜松ホトニクス株式会社 アルカリ金属発生剤、アルカリ金属発生器、光電面、二次電子放出面、電子管、光電面の製造方法、二次電子放出面の製造方法及び電子管の製造方法
WO2004066339A1 (ja) 2003-01-17 2004-08-05 Hamamatsu Photonics K.K. アルカリ金属発生剤、アルカリ金属発生器、光電面、二次電子放出面、電子管、光電面の製造方法、二次電子放出面の製造方法及び電子管の製造方法
JP4312555B2 (ja) * 2003-09-18 2009-08-12 富士フイルム株式会社 真空蒸着用ルツボおよび蛍光体シート製造装置
US7540978B2 (en) 2004-08-05 2009-06-02 Novaled Ag Use of an organic matrix material for producing an organic semiconductor material, organic semiconductor material and electronic component
ITMI20041736A1 (it) * 2004-09-10 2004-12-10 Getters Spa Miscele per l'evaporazione del litio e dispensatori di litio
DE602004006275T2 (de) 2004-10-07 2007-12-20 Novaled Ag Verfahren zur Dotierung von einem Halbleitermaterial mit Cäsium
ITMI20042279A1 (it) * 2004-11-24 2005-02-24 Getters Spa Sistema dispensatore di metalli alcalini in grado di dispensare quantita' elevate di metalli
US7625601B2 (en) * 2005-02-04 2009-12-01 Eastman Kodak Company Controllably feeding organic material in making OLEDs
US20060269656A1 (en) * 2005-05-26 2006-11-30 Eastman Kodak Company Reducing contamination in OLED processing systems
DE502005009415D1 (de) 2005-05-27 2010-05-27 Novaled Ag Transparente organische Leuchtdiode
EP1780816B1 (en) 2005-11-01 2020-07-01 Novaled GmbH A method for producing an electronic device with a layer structure and an electronic device
EP1798306B1 (de) 2005-12-07 2008-06-11 Novaled AG Verfahren zum Abscheiden eines Aufdampfmaterials
DE502005004675D1 (de) 2005-12-21 2008-08-21 Novaled Ag Organisches Bauelement
ITMI20060444A1 (it) 2006-03-13 2007-09-14 Getters Spa Uso di composizioni magnesio-rame per l'evaporazione di magnesio e dispensatori di magnesio
JP5683104B2 (ja) 2006-03-21 2015-03-11 ノヴァレッド・アクチエンゲゼルシャフト ドープされた有機半導体材料の製造方法及びそのために用いられる配合物
AT502678B1 (de) 2006-03-24 2007-05-15 Alvatec Alkali Vacuum Technolo Alkalimetall- oder erdalkalimetall- verdampferquelle
PT2201840E (pt) * 2006-09-22 2012-02-14 Pharmacyclics Inc Inibidores da tirosina quinase de bruton
ITMI20061872A1 (it) * 2006-09-29 2008-03-30 Getters Spa SCHERMO ELETTROLUMINECìSCENTE ORGANICO E PROCESSO PER LA SUA PRODUZIONE
ITMI20070301A1 (it) * 2007-02-16 2008-08-17 Getters Spa Supporti comprendenti materiali getter e sorgenti di metalli alcalini o alcalino-terrosi per sistemi di termoregolazione basati su effetto tunnel
ITMI20112051A1 (it) * 2011-11-11 2013-05-12 Getters Spa Composizione organico-inorganica per il rilascio in fase vapore di metalli alcalini ed alcalino-terrosi
US9491802B2 (en) * 2012-02-17 2016-11-08 Honeywell International Inc. On-chip alkali dispenser
ITMI20131171A1 (it) 2013-07-11 2015-01-11 Getters Spa Erogatore migliorato di vapori metallici
JPWO2015097894A1 (ja) * 2013-12-27 2017-03-23 パイオニア株式会社 発光素子及び発光素子の製造方法
CN105483397B (zh) * 2015-11-26 2017-12-26 北京有色金属研究总院 一种低温可控放铯的铯释放剂和其所用释放器的制备方法
USD814314S1 (en) * 2016-10-07 2018-04-03 S.C. Johnson & Son, Inc. Cartridge
USD821224S1 (en) * 2016-10-07 2018-06-26 S. C. Johnson & Son, Inc. Cartridge
CN110444463B (zh) * 2019-08-12 2020-11-10 电子科技大学 一种微电流铯离子源

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3578834A (en) * 1966-12-13 1971-05-18 Getters Spa Generation of alkali metals
US4275330A (en) * 1979-03-08 1981-06-23 General Electric Company Electric discharge lamp having a cathode with cesium metal oxide
CN1026039C (zh) * 1988-09-02 1994-09-28 菲利浦光灯制造公司 碱金属蒸气发放器
JPH11329347A (ja) * 1998-05-08 1999-11-30 Erebamu:Kk 放電ランプ及びその製造方法

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US2117735A (en) 1936-10-01 1938-05-17 Rca Corp Getter
US2424512A (en) * 1944-08-08 1947-07-22 Nat Res Corp Production of alkali metals and their oxides
US3096211A (en) * 1959-03-31 1963-07-02 Emi Ltd Alkali metal generators
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DE1945508B2 (de) 1968-09-13 1971-06-09 Vorrichtung zum freisetzen von metalldaempfen
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US4146497A (en) 1972-12-14 1979-03-27 S.A.E.S. Getters S.P.A. Supported getter
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US4233936A (en) 1979-05-08 1980-11-18 Rca Corporation Alkali metal dispenser
AU2993384A (en) * 1983-06-29 1986-01-02 Stauffer Chemical Company Preparation of polyphosphides using potassium graphite intercalate
IT1173866B (it) 1984-03-16 1987-06-24 Getters Spa Metodo perfezionato per fabbricare dispositivi getter non evarobili porosi e dispositivi getter cosi' prodotti
US5606219A (en) * 1992-12-25 1997-02-25 Fuji Photo Film Co., Ltd. Cathode for electronic flash tube
JPH06231727A (ja) * 1993-02-03 1994-08-19 Fuji Photo Film Co Ltd 閃光放電管用陰極材及びその製造方法
ATE314394T1 (de) 1993-08-13 2006-01-15 Uab Research Foundation Verfahren und zusammensetzungen zur stimulation und inhibition der aktivität von tgf-beta
JPH0978058A (ja) 1995-09-08 1997-03-25 Pioneer Electron Corp 有機エレクトロルミネッセンス素子
EP0845924B1 (en) 1996-11-29 2003-07-16 Idemitsu Kosan Company Limited Organic electroluminescent device
JPH10270171A (ja) 1997-01-27 1998-10-09 Junji Kido 有機エレクトロルミネッセント素子
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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3578834A (en) * 1966-12-13 1971-05-18 Getters Spa Generation of alkali metals
US4275330A (en) * 1979-03-08 1981-06-23 General Electric Company Electric discharge lamp having a cathode with cesium metal oxide
CN1026039C (zh) * 1988-09-02 1994-09-28 菲利浦光灯制造公司 碱金属蒸气发放器
JPH11329347A (ja) * 1998-05-08 1999-11-30 Erebamu:Kk 放電ランプ及びその製造方法

Also Published As

Publication number Publication date
EP1419542A2 (en) 2004-05-19
ITMI20010995A0 (it) 2001-05-15
EP1419542B1 (en) 2006-04-05
MY132034A (en) 2007-09-28
CA2430941A1 (en) 2002-11-21
CA2430941C (en) 2009-12-29
JP4087715B2 (ja) 2008-05-21
KR20030038666A (ko) 2003-05-16
US6753648B2 (en) 2004-06-22
TWI284001B (en) 2007-07-11
CN1531839A (zh) 2004-09-22
KR100742424B1 (ko) 2007-07-24
HK1068495A1 (zh) 2005-04-29
WO2002093664A8 (en) 2003-03-06
WO2002093664A2 (en) 2002-11-21
US20040206205A1 (en) 2004-10-21
DE60210478D1 (de) 2006-05-18
ATE322744T1 (de) 2006-04-15
AU2002309256A1 (en) 2002-11-25
DE60210478T2 (de) 2006-10-05
JP2004532932A (ja) 2004-10-28
US20040001916A1 (en) 2004-01-01
ITMI20010995A1 (it) 2002-11-15
WO2002093664A3 (en) 2003-02-06

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