KR20030038666A - 세슘 디스펜서 및 세슘 디스펜서의 사용 방법 - Google Patents
세슘 디스펜서 및 세슘 디스펜서의 사용 방법 Download PDFInfo
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- KR20030038666A KR20030038666A KR10-2003-7000536A KR20037000536A KR20030038666A KR 20030038666 A KR20030038666 A KR 20030038666A KR 20037000536 A KR20037000536 A KR 20037000536A KR 20030038666 A KR20030038666 A KR 20030038666A
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- South Korea
- Prior art keywords
- cesium
- dispenser
- electrodes
- mixture
- container
- Prior art date
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- 229910052792 caesium Inorganic materials 0.000 title claims abstract description 94
- TVFDJXOCXUVLDH-UHFFFAOYSA-N caesium atom Chemical compound [Cs] TVFDJXOCXUVLDH-UHFFFAOYSA-N 0.000 title claims abstract description 87
- 238000000034 method Methods 0.000 title claims abstract description 37
- 230000008569 process Effects 0.000 title claims description 6
- 239000000203 mixture Substances 0.000 claims abstract description 35
- 239000003638 chemical reducing agent Substances 0.000 claims abstract description 20
- PBYZMCDFOULPGH-UHFFFAOYSA-N tungstate Chemical compound [O-][W]([O-])(=O)=O PBYZMCDFOULPGH-UHFFFAOYSA-N 0.000 claims abstract description 6
- MEFBJEMVZONFCJ-UHFFFAOYSA-N molybdate Chemical compound [O-][Mo]([O-])(=O)=O MEFBJEMVZONFCJ-UHFFFAOYSA-N 0.000 claims abstract description 5
- 238000004519 manufacturing process Methods 0.000 claims description 26
- 238000001704 evaporation Methods 0.000 claims description 20
- 230000008020 evaporation Effects 0.000 claims description 16
- 239000011888 foil Substances 0.000 claims description 16
- 239000000463 material Substances 0.000 claims description 16
- 238000010438 heat treatment Methods 0.000 claims description 15
- 229910052751 metal Inorganic materials 0.000 claims description 15
- 239000002184 metal Substances 0.000 claims description 15
- -1 cesium compound Chemical class 0.000 claims description 13
- 229910045601 alloy Inorganic materials 0.000 claims description 12
- 239000000956 alloy Substances 0.000 claims description 12
- 239000000843 powder Substances 0.000 claims description 12
- 239000002245 particle Substances 0.000 claims description 11
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 6
- 229910002804 graphite Inorganic materials 0.000 claims description 6
- 239000010439 graphite Substances 0.000 claims description 6
- 150000002739 metals Chemical class 0.000 claims description 6
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 5
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 claims description 5
- 238000007789 sealing Methods 0.000 claims description 5
- 239000010936 titanium Substances 0.000 claims description 5
- 229910052719 titanium Inorganic materials 0.000 claims description 5
- 229910052726 zirconium Inorganic materials 0.000 claims description 5
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 claims description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 4
- 229910052782 aluminium Inorganic materials 0.000 claims description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical group [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 4
- 229910052710 silicon Inorganic materials 0.000 claims description 4
- 239000010703 silicon Substances 0.000 claims description 4
- 239000007787 solid Substances 0.000 claims description 4
- 229910052582 BN Inorganic materials 0.000 claims description 3
- BPQQTUXANYXVAA-UHFFFAOYSA-N Orthosilicate Chemical compound [O-][Si]([O-])([O-])[O-] BPQQTUXANYXVAA-UHFFFAOYSA-N 0.000 claims description 3
- 238000004320 controlled atmosphere Methods 0.000 claims description 3
- 239000013067 intermediate product Substances 0.000 claims description 3
- 229910000623 nickel–chromium alloy Inorganic materials 0.000 claims description 3
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 3
- 239000010937 tungsten Substances 0.000 claims description 3
- 229910000851 Alloy steel Inorganic materials 0.000 claims description 2
- 229910001182 Mo alloy Inorganic materials 0.000 claims description 2
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims description 2
- 229910001362 Ta alloys Inorganic materials 0.000 claims description 2
- 229910001080 W alloy Inorganic materials 0.000 claims description 2
- 239000000919 ceramic Substances 0.000 claims description 2
- 238000010924 continuous production Methods 0.000 claims description 2
- 229910001092 metal group alloy Inorganic materials 0.000 claims description 2
- 239000011733 molybdenum Substances 0.000 claims description 2
- 239000012466 permeate Substances 0.000 claims description 2
- 239000010959 steel Substances 0.000 claims description 2
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims description 2
- 238000003466 welding Methods 0.000 claims description 2
- 238000005304 joining Methods 0.000 claims 1
- 150000004760 silicates Chemical class 0.000 abstract 1
- 150000001875 compounds Chemical class 0.000 description 10
- ZCDOYSPFYFSLEW-UHFFFAOYSA-N chromate(2-) Chemical compound [O-][Cr]([O-])(=O)=O ZCDOYSPFYFSLEW-UHFFFAOYSA-N 0.000 description 7
- 239000007789 gas Substances 0.000 description 5
- 230000009471 action Effects 0.000 description 4
- 238000006243 chemical reaction Methods 0.000 description 4
- 239000011368 organic material Substances 0.000 description 4
- BROHICCPQMHYFY-UHFFFAOYSA-N caesium chromate Chemical compound [Cs+].[Cs+].[O-][Cr]([O-])(=O)=O BROHICCPQMHYFY-UHFFFAOYSA-N 0.000 description 3
- 238000000151 deposition Methods 0.000 description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 3
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 239000011651 chromium Substances 0.000 description 2
- 230000000052 comparative effect Effects 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- AGNOBAWAZFBMMI-UHFFFAOYSA-N dicesium dioxido(dioxo)molybdenum Chemical compound [Cs+].[Cs+].[O-][Mo]([O-])(=O)=O AGNOBAWAZFBMMI-UHFFFAOYSA-N 0.000 description 2
- SOCTUWSJJQCPFX-UHFFFAOYSA-N dichromate(2-) Chemical compound [O-][Cr](=O)(=O)O[Cr]([O-])(=O)=O SOCTUWSJJQCPFX-UHFFFAOYSA-N 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 239000008188 pellet Substances 0.000 description 2
- 239000004033 plastic Substances 0.000 description 2
- 229910000967 As alloy Inorganic materials 0.000 description 1
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 description 1
- 229910000990 Ni alloy Inorganic materials 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 229910052788 barium Inorganic materials 0.000 description 1
- DSAJWYNOEDNPEQ-UHFFFAOYSA-N barium atom Chemical compound [Ba] DSAJWYNOEDNPEQ-UHFFFAOYSA-N 0.000 description 1
- 230000000711 cancerogenic effect Effects 0.000 description 1
- 229910002090 carbon oxide Inorganic materials 0.000 description 1
- 231100000357 carcinogen Toxicity 0.000 description 1
- 239000003183 carcinogenic agent Substances 0.000 description 1
- XSMXWYNDWJGOLU-UHFFFAOYSA-N cesium;oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[Cs+].[Ta+5] XSMXWYNDWJGOLU-UHFFFAOYSA-N 0.000 description 1
- 150000001844 chromium Chemical class 0.000 description 1
- 239000000788 chromium alloy Substances 0.000 description 1
- JOPOVCBBYLSVDA-UHFFFAOYSA-N chromium(6+) Chemical compound [Cr+6] JOPOVCBBYLSVDA-UHFFFAOYSA-N 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- AQWIYQPYXQGBQU-UHFFFAOYSA-N dicesium;oxido-(oxido(dioxo)chromio)oxy-dioxochromium Chemical compound [Cs+].[Cs+].[O-][Cr](=O)(=O)O[Cr]([O-])(=O)=O AQWIYQPYXQGBQU-UHFFFAOYSA-N 0.000 description 1
- 230000009977 dual effect Effects 0.000 description 1
- 238000005265 energy consumption Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 230000001939 inductive effect Effects 0.000 description 1
- 239000004615 ingredient Substances 0.000 description 1
- 238000009830 intercalation Methods 0.000 description 1
- 230000007794 irritation Effects 0.000 description 1
- 239000011344 liquid material Substances 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 238000011112 process operation Methods 0.000 description 1
- 238000000746 purification Methods 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 230000009257 reactivity Effects 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 238000005482 strain hardening Methods 0.000 description 1
- 210000002105 tongue Anatomy 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J9/00—Apparatus or processes specially adapted for the manufacture, installation, removal, maintenance of electric discharge tubes, discharge lamps, or parts thereof; Recovery of material from discharge tubes or lamps
- H01J9/02—Manufacture of electrodes or electrode systems
- H01J9/12—Manufacture of electrodes or electrode systems of photo-emissive cathodes; of secondary-emission electrodes
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/24—Vacuum evaporation
- C23C14/243—Crucibles for source material
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
- C30B23/02—Epitaxial-layer growth
- C30B23/06—Heating of the deposition chamber, the substrate or the materials to be evaporated
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B33/00—Electroluminescent light sources
- H05B33/10—Apparatus or processes specially adapted to the manufacture of electroluminescent light sources
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B33/00—Electroluminescent light sources
- H05B33/12—Light sources with substantially two-dimensional radiating surfaces
- H05B33/22—Light sources with substantially two-dimensional radiating surfaces characterised by the chemical or physical composition or the arrangement of auxiliary dielectric or reflective layers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/30—Doping active layers, e.g. electron transporting layers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
- H10K50/11—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Mechanical Engineering (AREA)
- Crystallography & Structural Chemistry (AREA)
- Electroluminescent Light Sources (AREA)
- Physical Vapour Deposition (AREA)
- Inorganic Compounds Of Heavy Metals (AREA)
- Luminescent Compositions (AREA)
- Nitrogen And Oxygen Or Sulfur-Condensed Heterocyclic Ring Systems (AREA)
- Feeding, Discharge, Calcimining, Fusing, And Gas-Generation Devices (AREA)
- Compounds Of Unknown Constitution (AREA)
- Laminated Bodies (AREA)
- Catalysts (AREA)
- Silicates, Zeolites, And Molecular Sieves (AREA)
- Drying Of Gases (AREA)
Abstract
Description
Claims (18)
- 고상 입자를 보유할 수 있고, 표면 중 적어도 일부분(14; 32; 42)이 세슘 증기를 투과시킬 수 있으며, 하나 이상의 세슘 화합물과 하나 이상의 환원제의 혼합물(16; 44)을 함유할 수 있는 콘테이너로 형성된 세슘 디스펜서(10; 30; 40)에 있어서,상기 세슘 화합물은 몰리브데이트, 텅스테이트, 니오베이트, 탄탈레이트, 실리케이트 및 지르코네이트 중에서 선택되는 것을 특징으로 하는 세슘 디스펜서.
- 제 1 항에 있어서,상기 혼합물이 단일 세슘 화합물과 단일 환원제를 함유하는 것을 특징으로 하는 세슘 디스펜서.
- 제 1 항에 있어서,상기 환원제가 알루미늄, 실리콘, 지르코늄, 티탄, 또는 지르코늄 또는 티탄을 함유하는 합금 중에서 선택되는 것을 특징으로 하는 세슘 디스펜서.
- 제 3 항에 있어서,상기 환원제가 Zr 84중량%-Al 16중량%의 조성%를 갖는 합금인 것을 특징으로 하는 세슘 디스펜서.
- 제 3 항에 있어서,상기 환원제는 Zr 76.5중량%-Fe 23.5중량%의 조성%를 갖는 합금인 것을 특징으로 하는 세슘 디스펜서.
- 제 1 항에 있어서,상기 혼합물을 구성하는 재료가 분말 형태인 것을 특징으로 하는 세슘 디스펜서.
- 제 6 항에 있어서,상기 분말은 1mm 이하의 입자 크기를 갖는 것을 특징으로 하는 세슘 디스펜서.
- 제 7 항에 있어서,상기 분말은 500㎛ 이하의 입자 크기를 갖는 것을 특징으로 하는 세슘 디스펜서.
- 제 8 항에 있어서,상기 분말은 10㎛ 내지 125㎛ 범위의 입자 크기를 갖는 것을 특징으로 하는 세슘 디스펜서.
- 제 1 항에 있어서,상기 혼합물을 구성하는 재료의 중량비가 10 : 1 내지 1 : 10 범위인 것을 특징으로 하는 세슘 디스펜서.
- 제 1 항에 있어서,상기 콘테이너는 금속, 금속 합금, 그래파이트, 보론 나이트라이드 및 세라믹 중에서 선택된 재료로 제조되는 것을 특징으로 하는 세슘 디스펜서.
- 제 11 항에 있어서,상기 재료는 몰리브덴, 탄탈, 텅스텐, 강 및 니켈-크롬 합금 중에서 선택되는 것을 특징으로 하는 세슘 디스펜서.
- 제 1 항에 있어서,중앙 영역(14)에 다수의 작은 크기의 홀(15)을 구비한 제 1 호일(11)과 대응 중앙 영역에서 함몰부(13)를 구비한 제 2 호일(12)을 접합함으로써 형성되는 콘테이너; 및 상기 함몰부 내에 있는 하나 이상의 세슘 화합물과 하나 이상의 환원제의 혼합물(16)로 구성되며;고체 입자가 배출되는 것을 방지하도록 상기 두 호일은 접합되며; 그리고상기 디스펜서는 기계적 수단에 의한 취급 및 디스펜서 자체의 전기 단자로의 연결을 위한 두 측면 돌출부(17, 17')를 구비하는 세슘 디스펜서(10).
- 제 1 항에 있어서,함몰부에 하나 이상의 세슘 화합물과 하나 이상의 환원제의 혼합물이 함유된 호일(31)과,점 용접(34)에 의해 상기 호일 상에 고정된 유지 소자(33)에 의해 상기 함몰부 상의 위치에 유지되고, 게터 재료를 포함하거나 게터 재료로 형성된 다공성 몸체(32)로 형성된 콘테이너로 구성된 세슘 디스펜서(30).
- 제 1 항에 있어서,사다리꼴 단면의 연장 구조를 갖는 콘테이너(41)와 세슘의 증발을 허용하지만 상기 콘테이너 내에 존재하는 분말 혼합물(44)이 배출되는 것을 방지하는 와이어(43)에 의해 막힌 종방향 슬릿(42)으로 구성되며, 상기 콘테이너는 그 단부에서 상기 단부를 밀폐시키고 상기 디스펜서를 가열하기 위한 전기 단자를 형성하는 두 단자(45, 45') 주위에서 테이퍼진 세슘 디스펜서(40).
- 제 1 투명 지지부, 제 1 세트의 전극, 유기 다층, 제 2 세트의 전극 및 제 2 지지부로 형성된 OLED형 스크린의 제조에서 제 1 항 내지 제 15 항 중 어느 한 항에 따른 세슘 디스펜서를 사용하는 방법으로서,- 제어된 분위기를 갖고 상기 세슘 디스펜서를 가열하기 위한 수단을 구비한챔버 내에 세슘 디스펜서를 유입시키는 단계,- 상기 유기 다층을 형성한 후 얻어진 OLED 스크린의 중간 제품을 상기 챔버 내에 정렬하는 단계,- 상기 디스펜서를 가열함으로써 상기 디스펜서로부터 세슘을 증발시키는 단계, 및- 제 2 지지부와 밀봉될 때까지 OLED 스크린의 연속적인 생산 단계를 수행하는 단계를 포함하는 세슘 디스펜서를 사용하는 방법.
- 제 16 항에 있어서,- 상기 제 1 투명 지지부 상에 상기 제 1 세트의 전극을 제조하는 공정,- 상기 제 1 세트의 전극 상에 상기 유기 다층을 제조하는 공정,- 상기 유기 다층에서 세슘을 증발시키는 공정,- 상기 유기 다층 상에 상기 제 2 세트의 전극을 제조하는 공정,- 기타 공정 및 상기 제 1 및 제 2 지지부의 주변부를 따라 실링하는 공정을 포함하는 세슘 디스펜서의 사용 방법.
- 제 16 항에 있어서,- 상기 제 1 투명 지지부 상에 상기 제 1 세트의 전극을 제조하는 공정,- 상기 제 1 세트의 전극 상에 상기 유기 다층을 제조하는 공정,- 상기 유기 다층 상에 상기 제 2 세트의 전극을 제조하는 공정,- 상기 제 2 세트의 전극에서 세슘을 증발시키는 공정,- 기타 공정 및 상기 제 1 및 제 2 지지부의 주변부를 따라 실링하는 공정을 포함하는 세슘 디스펜서의 사용 방법.
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
IT2001MI000995A ITMI20010995A1 (it) | 2001-05-15 | 2001-05-15 | Dispensatori di cesio e processo per il loro uso |
ITMI2001A000995 | 2001-05-15 | ||
PCT/IT2002/000301 WO2002093664A2 (en) | 2001-05-15 | 2002-05-07 | Cesium dispensers and process for the use thereof |
Publications (2)
Publication Number | Publication Date |
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KR20030038666A true KR20030038666A (ko) | 2003-05-16 |
KR100742424B1 KR100742424B1 (ko) | 2007-07-24 |
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KR1020037000536A KR100742424B1 (ko) | 2001-05-15 | 2002-05-07 | 세슘 디스펜서 및 세슘 디스펜서의 사용 방법 |
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US (2) | US6753648B2 (ko) |
EP (1) | EP1419542B1 (ko) |
JP (1) | JP4087715B2 (ko) |
KR (1) | KR100742424B1 (ko) |
CN (1) | CN100459219C (ko) |
AT (1) | ATE322744T1 (ko) |
AU (1) | AU2002309256A1 (ko) |
CA (1) | CA2430941C (ko) |
DE (1) | DE60210478T2 (ko) |
HK (1) | HK1068495A1 (ko) |
IT (1) | ITMI20010995A1 (ko) |
MY (1) | MY132034A (ko) |
TW (1) | TWI284001B (ko) |
WO (1) | WO2002093664A2 (ko) |
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WO2002093249A1 (fr) | 2001-05-17 | 2002-11-21 | Daikin Industries, Ltd. | Materiau optique non lineaire contenant un polymere fluore |
ITMI20021904A1 (it) * | 2002-09-06 | 2004-03-07 | Getters Spa | Elemento accessorio per dispensatori di metalli alcalini |
WO2004066337A1 (ja) | 2003-01-17 | 2004-08-05 | Hamamatsu Photonics K.K. | アルカリ金属発生剤、アルカリ金属発生器、光電面、二次電子放出面、電子管、光電面の製造方法、二次電子放出面の製造方法及び電子管の製造方法 |
US20060152154A1 (en) * | 2003-01-17 | 2006-07-13 | Hiroyuki Sugiyama | Alkali metal generating agent, alkali metal generator, photoelectric surface, secondary electron emission surface, electron tube, method for manufacturing photoelectric surface, method for manufacturing secondary electron emission surface, and method for manufacturing electron tube |
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EP1648042B1 (en) * | 2004-10-07 | 2007-05-02 | Novaled AG | A method for doping a semiconductor material with cesium |
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DE502005004425D1 (de) | 2005-12-07 | 2008-07-24 | Novaled Ag | Verfahren zum Abscheiden eines Aufdampfmaterials |
EP1806795B1 (de) | 2005-12-21 | 2008-07-09 | Novaled AG | Organisches Bauelement |
ITMI20060444A1 (it) | 2006-03-13 | 2007-09-14 | Getters Spa | Uso di composizioni magnesio-rame per l'evaporazione di magnesio e dispensatori di magnesio |
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ITMI20131171A1 (it) * | 2013-07-11 | 2015-01-11 | Getters Spa | Erogatore migliorato di vapori metallici |
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-
2001
- 2001-05-15 IT IT2001MI000995A patent/ITMI20010995A1/it unknown
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2002
- 2002-04-23 TW TW091108362A patent/TWI284001B/zh not_active IP Right Cessation
- 2002-05-07 WO PCT/IT2002/000301 patent/WO2002093664A2/en active IP Right Grant
- 2002-05-07 AT AT02735976T patent/ATE322744T1/de not_active IP Right Cessation
- 2002-05-07 EP EP02735976A patent/EP1419542B1/en not_active Expired - Lifetime
- 2002-05-07 DE DE60210478T patent/DE60210478T2/de not_active Expired - Lifetime
- 2002-05-07 KR KR1020037000536A patent/KR100742424B1/ko active IP Right Grant
- 2002-05-07 CA CA002430941A patent/CA2430941C/en not_active Expired - Fee Related
- 2002-05-07 JP JP2002590432A patent/JP4087715B2/ja not_active Expired - Lifetime
- 2002-05-07 CN CNB028023765A patent/CN100459219C/zh not_active Expired - Lifetime
- 2002-05-07 AU AU2002309256A patent/AU2002309256A1/en not_active Abandoned
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- 2004-05-10 US US10/842,352 patent/US20040206205A1/en not_active Abandoned
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Also Published As
Publication number | Publication date |
---|---|
EP1419542A2 (en) | 2004-05-19 |
CN100459219C (zh) | 2009-02-04 |
CA2430941A1 (en) | 2002-11-21 |
JP4087715B2 (ja) | 2008-05-21 |
DE60210478D1 (de) | 2006-05-18 |
KR100742424B1 (ko) | 2007-07-24 |
AU2002309256A1 (en) | 2002-11-25 |
MY132034A (en) | 2007-09-28 |
CN1531839A (zh) | 2004-09-22 |
WO2002093664A8 (en) | 2003-03-06 |
US6753648B2 (en) | 2004-06-22 |
ITMI20010995A1 (it) | 2002-11-15 |
JP2004532932A (ja) | 2004-10-28 |
CA2430941C (en) | 2009-12-29 |
WO2002093664A2 (en) | 2002-11-21 |
DE60210478T2 (de) | 2006-10-05 |
ITMI20010995A0 (it) | 2001-05-15 |
TWI284001B (en) | 2007-07-11 |
ATE322744T1 (de) | 2006-04-15 |
WO2002093664A3 (en) | 2003-02-06 |
US20040001916A1 (en) | 2004-01-01 |
EP1419542B1 (en) | 2006-04-05 |
US20040206205A1 (en) | 2004-10-21 |
HK1068495A1 (en) | 2005-04-29 |
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