CN100438071C - 具有自对准结构的垂直栅半导体器件 - Google Patents

具有自对准结构的垂直栅半导体器件 Download PDF

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Publication number
CN100438071C
CN100438071C CNB038193604A CN03819360A CN100438071C CN 100438071 C CN100438071 C CN 100438071C CN B038193604 A CNB038193604 A CN B038193604A CN 03819360 A CN03819360 A CN 03819360A CN 100438071 C CN100438071 C CN 100438071C
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CN
China
Prior art keywords
substrate
semiconductor device
conducting material
layer
electric conducting
Prior art date
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Expired - Fee Related
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CNB038193604A
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English (en)
Chinese (zh)
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CN1675777A (zh
Inventor
戈登·M·格里芙娜
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Semiconductor Components Industries LLC
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Semiconductor Components Industries LLC
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Publication of CN1675777A publication Critical patent/CN1675777A/zh
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P10/00—Bonding of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D10/00—Bipolar junction transistors [BJT]
    • H10D10/01—Manufacture or treatment
    • H10D10/051—Manufacture or treatment of vertical BJTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D10/00—Bipolar junction transistors [BJT]
    • H10D10/40—Vertical BJTs
    • H10D10/421—Vertical BJTs having both emitter-base and base-collector junctions ending at the same surface of the body
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/028—Manufacture or treatment of FETs having insulated gates [IGFET] of double-diffused metal oxide semiconductor [DMOS] FETs
    • H10D30/0291—Manufacture or treatment of FETs having insulated gates [IGFET] of double-diffused metal oxide semiconductor [DMOS] FETs of vertical DMOS [VDMOS] FETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
    • H10D30/66—Vertical DMOS [VDMOS] FETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/27—Electrodes not carrying the current to be rectified, amplified, oscillated or switched, e.g. gates
    • H10D64/281—Base electrodes for bipolar transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/27—Electrodes not carrying the current to be rectified, amplified, oscillated or switched, e.g. gates
    • H10D64/311—Gate electrodes for field-effect devices
    • H10D64/411—Gate electrodes for field-effect devices for FETs
    • H10D64/511—Gate electrodes for field-effect devices for FETs for IGFETs
    • H10D64/517—Gate electrodes for field-effect devices for FETs for IGFETs characterised by the conducting layers
    • H10D64/518—Gate electrodes for field-effect devices for FETs for IGFETs characterised by the conducting layers characterised by their lengths or sectional shapes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
    • H10D30/66—Vertical DMOS [VDMOS] FETs
    • H10D30/665—Vertical DMOS [VDMOS] FETs having edge termination structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H10D64/013—Manufacture or treatment of electrodes having a conductor capacitively coupled to a semiconductor by an insulator
    • H10D64/01302—Manufacture or treatment of electrodes having a conductor capacitively coupled to a semiconductor by an insulator the insulator being formed after the semiconductor body, the semiconductor being silicon
    • H10D64/01304—Manufacture or treatment of electrodes having a conductor capacitively coupled to a semiconductor by an insulator the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor
    • H10D64/01324—Manufacture or treatment of electrodes having a conductor capacitively coupled to a semiconductor by an insulator the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor characterised by the sectional shape, e.g. T or inverted-T
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H10D64/013—Manufacture or treatment of electrodes having a conductor capacitively coupled to a semiconductor by an insulator
    • H10D64/01302—Manufacture or treatment of electrodes having a conductor capacitively coupled to a semiconductor by an insulator the insulator being formed after the semiconductor body, the semiconductor being silicon
    • H10D64/01304—Manufacture or treatment of electrodes having a conductor capacitively coupled to a semiconductor by an insulator the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor
    • H10D64/01326—Aspects related to lithography, isolation or planarisation of the conductor
    • H10D64/0133—Aspects related to lithography, isolation or planarisation of the conductor at least part of the entire electrode being a sidewall spacer, being formed by transformation under a mask or being formed by plating at a sidewall

Landscapes

  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Junction Field-Effect Transistors (AREA)
CNB038193604A 2002-08-16 2003-07-28 具有自对准结构的垂直栅半导体器件 Expired - Fee Related CN100438071C (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/219,190 US7045845B2 (en) 2002-08-16 2002-08-16 Self-aligned vertical gate semiconductor device
US10/219,190 2002-08-16

Publications (2)

Publication Number Publication Date
CN1675777A CN1675777A (zh) 2005-09-28
CN100438071C true CN100438071C (zh) 2008-11-26

Family

ID=31714695

Family Applications (1)

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CNB038193604A Expired - Fee Related CN100438071C (zh) 2002-08-16 2003-07-28 具有自对准结构的垂直栅半导体器件

Country Status (7)

Country Link
US (1) US7045845B2 (enExample)
EP (1) EP1535344B1 (enExample)
JP (1) JP5036130B2 (enExample)
KR (1) KR101026953B1 (enExample)
CN (1) CN100438071C (enExample)
AU (1) AU2003254226A1 (enExample)
WO (1) WO2004017419A1 (enExample)

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2005116304A2 (en) * 2004-04-23 2005-12-08 Asm America, Inc. In situ doped epitaxial films
JP4929579B2 (ja) * 2004-10-26 2012-05-09 日産自動車株式会社 半導体装置の製造方法
ITMI20042243A1 (it) * 2004-11-19 2005-02-19 St Microelectronics Srl Processo per la realizzazione di un dispositivo mos di potenza ad alta densita' di integrazione
US7569883B2 (en) * 2004-11-19 2009-08-04 Stmicroelectronics, S.R.L. Switching-controlled power MOS electronic device
US7397084B2 (en) * 2005-04-01 2008-07-08 Semiconductor Components Industries, L.L.C. Semiconductor device having enhanced performance and method
US7446354B2 (en) * 2005-04-25 2008-11-04 Semiconductor Components Industries, L.L.C. Power semiconductor device having improved performance and method
US7276747B2 (en) * 2005-04-25 2007-10-02 Semiconductor Components Industries, L.L.C. Semiconductor device having screening electrode and method
US7300850B2 (en) * 2005-09-30 2007-11-27 Semiconductor Components Industries, L.L.C. Method of forming a self-aligned transistor
KR20080089403A (ko) * 2005-12-22 2008-10-06 에이에스엠 아메리카, 인코포레이티드 도핑된 반도체 물질들의 에피택시 증착
US20110084332A1 (en) * 2009-10-08 2011-04-14 Vishay General Semiconductor, Llc. Trench termination structure
JP2012253291A (ja) * 2011-06-07 2012-12-20 Sumitomo Electric Ind Ltd 炭化珪素半導体装置の製造方法
US20130154017A1 (en) * 2011-12-14 2013-06-20 Microchip Technology Incorporated Self-Aligned Gate Structure for Field Effect Transistor
US10217644B2 (en) * 2012-07-24 2019-02-26 Infineon Technologies Ag Production of adhesion structures in dielectric layers using photoprocess technology and devices incorporating adhesion structures
US9818831B2 (en) * 2013-03-11 2017-11-14 Semiconductor Components Industreis, Llc DMOS transistor including a gate dielectric having a non-uniform thickness
CN109616447A (zh) * 2018-12-13 2019-04-12 武汉新芯集成电路制造有限公司 一种半导体器件及其制造方法
US11569378B2 (en) 2020-12-22 2023-01-31 Texas Instruments Incorporated Semiconductor on insulator on wide band-gap semiconductor
US11557673B2 (en) 2020-12-29 2023-01-17 Texas Instruments Incorporated Hybrid semiconductor device

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06163906A (ja) * 1992-11-27 1994-06-10 Sanyo Electric Co Ltd 絶縁ゲート半導体装置及びその製造方法
CN1226753A (zh) * 1998-02-19 1999-08-25 国际商业机器公司 具有垂直栅侧壁的场效应晶体管和制造这种晶体管的方法
US6110783A (en) * 1997-06-27 2000-08-29 Sun Microsystems, Inc. Method for forming a notched gate oxide asymmetric MOS device
US6268626B1 (en) * 1999-01-20 2001-07-31 Fairchild Korea Semiconductor Ltd. DMOS field effect transistor with improved electrical characteristics and method for manufacturing the same

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04256367A (ja) * 1991-02-08 1992-09-11 Hitachi Ltd 半導体素子
JP3173094B2 (ja) * 1992-01-23 2001-06-04 ソニー株式会社 Ｍｏｓトランジスタの製造方法
JPH065864A (ja) * 1992-06-23 1994-01-14 Shindengen Electric Mfg Co Ltd 絶縁ゲ−ト型電界効果トランジスタおよび製造方法
JP3166148B2 (ja) * 1995-07-11 2001-05-14 横河電機株式会社 半導体装置
DE19731496A1 (de) * 1997-07-22 1999-01-28 Siemens Ag Herstellungsverfahren für ein durch Feldeffekt gesteuertes Halbleiterbauelement
US6051456A (en) 1998-12-21 2000-04-18 Motorola, Inc. Semiconductor component and method of manufacture
US6197640B1 (en) * 1998-12-21 2001-03-06 Semiconductor Components Industries, Llc Semiconductor component and method of manufacture
FR2788629B1 (fr) * 1999-01-15 2003-06-20 Commissariat Energie Atomique Transistor mis et procede de fabrication d'un tel transistor sur un substrat semiconducteur

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06163906A (ja) * 1992-11-27 1994-06-10 Sanyo Electric Co Ltd 絶縁ゲート半導体装置及びその製造方法
US6110783A (en) * 1997-06-27 2000-08-29 Sun Microsystems, Inc. Method for forming a notched gate oxide asymmetric MOS device
CN1226753A (zh) * 1998-02-19 1999-08-25 国际商业机器公司 具有垂直栅侧壁的场效应晶体管和制造这种晶体管的方法
US6268626B1 (en) * 1999-01-20 2001-07-31 Fairchild Korea Semiconductor Ltd. DMOS field effect transistor with improved electrical characteristics and method for manufacturing the same

Also Published As

Publication number Publication date
KR20050038013A (ko) 2005-04-25
US20040031981A1 (en) 2004-02-19
EP1535344B1 (en) 2012-11-21
AU2003254226A1 (en) 2004-03-03
JP5036130B2 (ja) 2012-09-26
HK1081325A1 (zh) 2006-05-12
EP1535344A1 (en) 2005-06-01
JP2005536056A (ja) 2005-11-24
WO2004017419A1 (en) 2004-02-26
US7045845B2 (en) 2006-05-16
KR101026953B1 (ko) 2011-04-11
CN1675777A (zh) 2005-09-28

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