CN100431097C - 上部电极、等离子体处理装置和等离子体处理方法 - Google Patents

上部电极、等离子体处理装置和等离子体处理方法 Download PDF

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Publication number
CN100431097C
CN100431097C CNB2006100930881A CN200610093088A CN100431097C CN 100431097 C CN100431097 C CN 100431097C CN B2006100930881 A CNB2006100930881 A CN B2006100930881A CN 200610093088 A CN200610093088 A CN 200610093088A CN 100431097 C CN100431097 C CN 100431097C
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temperature
heat transfer
transfer medium
upper electrode
gas
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Chinese (zh)
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CN1885488A (zh
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田中善嗣
南雅人
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Tokyo Electron Ltd
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Tokyo Electron Ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67063—Apparatus for fluid treatment for etching
    • H01L21/67069—Apparatus for fluid treatment for etching for drying etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32532—Electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67109—Apparatus for thermal treatment mainly by convection
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H01L21/67248—Temperature monitoring

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Power Engineering (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
  • Plasma Technology (AREA)
  • Chemical Vapour Deposition (AREA)
CNB2006100930881A 2005-06-20 2006-06-20 上部电极、等离子体处理装置和等离子体处理方法 Active CN100431097C (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2005-179699 2005-06-20
JP2005179699A JP4593381B2 (ja) 2005-06-20 2005-06-20 上部電極、プラズマ処理装置およびプラズマ処理方法
JP2005179699 2005-06-20

Publications (2)

Publication Number Publication Date
CN1885488A CN1885488A (zh) 2006-12-27
CN100431097C true CN100431097C (zh) 2008-11-05

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CNB2006100930881A Active CN100431097C (zh) 2005-06-20 2006-06-20 上部电极、等离子体处理装置和等离子体处理方法

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JP (1) JP4593381B2 (ja)
KR (1) KR100802667B1 (ja)
CN (1) CN100431097C (ja)
TW (1) TWI433232B (ja)

Families Citing this family (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4826483B2 (ja) * 2007-01-19 2011-11-30 東京エレクトロン株式会社 プラズマ処理装置
US8375890B2 (en) 2007-03-19 2013-02-19 Micron Technology, Inc. Apparatus and methods for capacitively coupled plasma vapor processing of semiconductor wafers
KR100959727B1 (ko) * 2007-11-13 2010-05-26 주식회사 동부하이텍 웨이퍼 냉각 장치
KR101381208B1 (ko) * 2007-11-20 2014-04-04 주성엔지니어링(주) 박막처리장치
KR101083590B1 (ko) * 2008-09-11 2011-11-16 엘아이지에이디피 주식회사 플라즈마 처리장치
DE112010000818T8 (de) * 2009-01-09 2012-08-09 Ulvac, Inc. Plasmaverarbeitungsvorrichtung
JP5221421B2 (ja) 2009-03-10 2013-06-26 東京エレクトロン株式会社 シャワーヘッド及びプラズマ処理装置
US8591755B2 (en) 2010-09-15 2013-11-26 Lam Research Corporation Methods for controlling plasma constituent flux and deposition during semiconductor fabrication and apparatus for implementing the same
US8791392B2 (en) * 2010-10-22 2014-07-29 Lam Research Corporation Methods of fault detection for multiplexed heater array
JP2013131485A (ja) * 2011-11-22 2013-07-04 Kobe Steel Ltd プラズマ発生源の冷却機構及び冷却方法
TWI512306B (zh) * 2013-04-25 2015-12-11 Murata Manufacturing Co Test equipment for electronic parts
CN103305812A (zh) * 2013-06-08 2013-09-18 上海和辉光电有限公司 一种上电极装置
JP6255267B2 (ja) * 2014-02-06 2017-12-27 株式会社日立国際電気 基板処理装置、加熱装置、天井断熱体及び半導体装置の製造方法
CN105632968A (zh) * 2014-10-30 2016-06-01 北京北方微电子基地设备工艺研究中心有限责任公司 工艺腔室和半导体加工设备
JP2016174056A (ja) * 2015-03-16 2016-09-29 株式会社東芝 半導体製造装置および半導体装置の製造方法
CN105097408B (zh) * 2015-07-21 2017-09-26 深圳市华星光电技术有限公司 一种干法刻蚀机台及其使用方法
US10373794B2 (en) 2015-10-29 2019-08-06 Lam Research Corporation Systems and methods for filtering radio frequencies from a signal of a thermocouple and controlling a temperature of an electrode in a plasma chamber
JP7055061B2 (ja) * 2018-05-01 2022-04-15 東京エレクトロン株式会社 温調機構及び液処理装置
CN109273339B (zh) * 2018-09-18 2021-03-19 惠科股份有限公司 一种反应室、干法刻蚀设备及刻蚀方法
JP2020067212A (ja) * 2018-10-23 2020-04-30 パナソニックＩｐマネジメント株式会社 加熱装置および加熱装置を備えた冷蔵庫
JP7278172B2 (ja) * 2018-10-23 2023-05-19 東京エレクトロン株式会社 基板処理装置
KR20200097021A (ko) 2019-02-07 2020-08-18 (주)포인트엔지니어링 온도 조절 장치
JP2023530706A (ja) * 2020-06-18 2023-07-19 クリック アンド ソッファ インダストリーズ、インク． ダイアタッチシステム、フリップチップボンディングシステム、クリップアタッチシステムなどの装置のためのオーブンおよびその関連方法

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4534816A (en) * 1984-06-22 1985-08-13 International Business Machines Corporation Single wafer plasma etch reactor
JP2000306889A (ja) * 1999-04-21 2000-11-02 Hitachi Ltd ドライエッチング装置
JP2001127046A (ja) * 1999-10-29 2001-05-11 Tokyo Electron Yamanashi Ltd プラズマ処理装置
CN1551302A (zh) * 2003-05-13 2004-12-01 ���������ƴ���ʽ���� 上部电极和等离子体处理装置

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3113796B2 (ja) * 1995-07-10 2000-12-04 東京エレクトロン株式会社 プラズマ処理装置
JP3726477B2 (ja) * 1998-03-16 2005-12-14 株式会社日立製作所 プラズマ処理装置及びプラズマ処理方法
JP2001267310A (ja) * 2000-03-17 2001-09-28 Tokyo Electron Ltd プラズマ成膜方法及びその装置
JP2002129331A (ja) * 2000-10-24 2002-05-09 Sony Corp 成膜装置および処理装置

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4534816A (en) * 1984-06-22 1985-08-13 International Business Machines Corporation Single wafer plasma etch reactor
JP2000306889A (ja) * 1999-04-21 2000-11-02 Hitachi Ltd ドライエッチング装置
JP2001127046A (ja) * 1999-10-29 2001-05-11 Tokyo Electron Yamanashi Ltd プラズマ処理装置
CN1551302A (zh) * 2003-05-13 2004-12-01 ���������ƴ���ʽ���� 上部电极和等离子体处理装置

Also Published As

Publication number Publication date
CN1885488A (zh) 2006-12-27
KR100802667B1 (ko) 2008-02-12
JP2006352040A (ja) 2006-12-28
TWI433232B (zh) 2014-04-01
TW200741854A (en) 2007-11-01
KR20060133485A (ko) 2006-12-26
JP4593381B2 (ja) 2010-12-08

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