CN100388515C - 半导体发光器件及其制造方法 - Google Patents

半导体发光器件及其制造方法 Download PDF

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Publication number
CN100388515C
CN100388515C CNB2005100303217A CN200510030321A CN100388515C CN 100388515 C CN100388515 C CN 100388515C CN B2005100303217 A CNB2005100303217 A CN B2005100303217A CN 200510030321 A CN200510030321 A CN 200510030321A CN 100388515 C CN100388515 C CN 100388515C
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China
Prior art keywords
layer
metal layer
laminated
semiconductor
ohmic
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CNB2005100303217A
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English (en)
Chinese (zh)
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CN1770486A (zh
Inventor
江风益
王立
方文卿
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Jingneng Optoelectronics Co ltd
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Lattice Power Jiangxi Corp
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Application filed by Lattice Power Jiangxi Corp filed Critical Lattice Power Jiangxi Corp
Priority to CNB2005100303217A priority Critical patent/CN100388515C/zh
Publication of CN1770486A publication Critical patent/CN1770486A/zh
Priority to PCT/CN2006/002584 priority patent/WO2007036164A1/fr
Priority to EP06791170.1A priority patent/EP1929545A4/fr
Priority to JP2008532572A priority patent/JP2009510730A/ja
Priority to KR1020087005001A priority patent/KR20080049724A/ko
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Publication of CN100388515C publication Critical patent/CN100388515C/zh
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/14—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure
    • H01L33/145—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure with a current-blocking structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0008—Processes
    • H01L2933/0016—Processes relating to electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0093—Wafer bonding; Removal of the growth substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H01L33/38—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Led Devices (AREA)
CNB2005100303217A 2005-09-30 2005-09-30 半导体发光器件及其制造方法 Active CN100388515C (zh)

Priority Applications (5)

Application Number Priority Date Filing Date Title
CNB2005100303217A CN100388515C (zh) 2005-09-30 2005-09-30 半导体发光器件及其制造方法
PCT/CN2006/002584 WO2007036164A1 (fr) 2005-09-30 2006-09-29 Dispositif electroluminescent a semi-conducteur et son procede de fabrication
EP06791170.1A EP1929545A4 (fr) 2005-09-30 2006-09-29 Dispositif electroluminescent a semi-conducteur et son procede de fabrication
JP2008532572A JP2009510730A (ja) 2005-09-30 2006-09-29 半導体発光デバイスおよびその製造方法
KR1020087005001A KR20080049724A (ko) 2005-09-30 2006-09-29 반도체 발광 장치 및 이의 제조 방법

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CNB2005100303217A CN100388515C (zh) 2005-09-30 2005-09-30 半导体发光器件及其制造方法

Publications (2)

Publication Number Publication Date
CN1770486A CN1770486A (zh) 2006-05-10
CN100388515C true CN100388515C (zh) 2008-05-14

Family

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Family Applications (1)

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CNB2005100303217A Active CN100388515C (zh) 2005-09-30 2005-09-30 半导体发光器件及其制造方法

Country Status (5)

Country Link
EP (1) EP1929545A4 (fr)
JP (1) JP2009510730A (fr)
KR (1) KR20080049724A (fr)
CN (1) CN100388515C (fr)
WO (1) WO2007036164A1 (fr)

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JP2007207869A (ja) * 2006-01-31 2007-08-16 Rohm Co Ltd 窒化物半導体発光素子
DE102007046519A1 (de) * 2007-09-28 2009-04-02 Osram Opto Semiconductors Gmbh Dünnfilm-LED mit einer Spiegelschicht und Verfahren zu deren Herstellung
KR20110006652A (ko) 2008-03-25 2011-01-20 라티스 파워(지앙시) 코포레이션 양면 패시베이션을 갖는 반도체 발광 소자
US8373152B2 (en) * 2008-03-27 2013-02-12 Lg Innotek Co., Ltd. Light-emitting element and a production method therefor
EP2280426B1 (fr) * 2008-04-16 2017-07-05 LG Innotek Co., Ltd. Dispositif électroluminescent
JP4583487B2 (ja) 2009-02-10 2010-11-17 Ｄｏｗａエレクトロニクス株式会社 半導体発光素子およびその製造方法
JP4871967B2 (ja) * 2009-02-10 2012-02-08 Ｄｏｗａエレクトロニクス株式会社 半導体発光素子およびその製造方法
KR100999726B1 (ko) * 2009-05-04 2010-12-08 엘지이노텍 주식회사 발광소자 및 그 제조방법
KR101154750B1 (ko) * 2009-09-10 2012-06-08 엘지이노텍 주식회사 발광소자 및 그 제조방법
KR100986407B1 (ko) * 2009-10-22 2010-10-08 엘지이노텍 주식회사 발광소자 및 그 제조방법
KR101007077B1 (ko) * 2009-11-06 2011-01-10 엘지이노텍 주식회사 발광소자, 발광소자 패키지 및 그 제조방법
JP5733594B2 (ja) * 2010-02-18 2015-06-10 スタンレー電気株式会社 半導体発光装置
KR101014071B1 (ko) * 2010-04-15 2011-02-10 엘지이노텍 주식회사 발광 소자, 발광 소자 제조방법, 발광 소자 패키지 및 조명 시스템
KR101039609B1 (ko) * 2010-05-24 2011-06-09 엘지이노텍 주식회사 발광 소자, 발광 소자의 제조방법 및 발광 소자 패키지
US8502244B2 (en) 2010-08-31 2013-08-06 Micron Technology, Inc. Solid state lighting devices with current routing and associated methods of manufacturing
CN101997070A (zh) * 2010-09-10 2011-03-30 北京工业大学 一种高反射低电压的倒装发光二极管及其制备方法
JP2012253304A (ja) * 2011-06-07 2012-12-20 Toshiba Corp 窒化物半導体発光素子の製造方法
JP2013026451A (ja) * 2011-07-21 2013-02-04 Stanley Electric Co Ltd 半導体発光素子
JP2014532993A (ja) * 2011-11-07 2014-12-08 コーニンクレッカ フィリップス エヌ ヴェ より一様な注入及びより少ない光学的損失を備える改善されたｐ型接点
KR101220419B1 (ko) * 2012-04-27 2013-01-21 한국광기술원 수직 구조 발광 다이오드
JP6185786B2 (ja) * 2012-11-29 2017-08-23 スタンレー電気株式会社 発光素子
JP6190591B2 (ja) * 2013-01-15 2017-08-30 スタンレー電気株式会社 半導体発光素子
CN103456864B (zh) * 2013-08-29 2016-01-27 刘晶 一种发光二极管芯片的制作方法、芯片及发光二极管
CN110993756B (zh) * 2019-12-18 2022-12-06 东莞市中晶半导体科技有限公司 Led芯片及其制作方法
WO2024043316A1 (fr) * 2022-08-25 2024-02-29 国立大学法人京都大学 Laser à cristal photonique bidimensionnel

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05243612A (ja) * 1992-03-03 1993-09-21 Sharp Corp 発光ダイオード及びその製造方法
JPH09237916A (ja) * 1996-02-29 1997-09-09 Sharp Corp 発光ダイオード及びその製造方法
CN1295350A (zh) * 1999-11-05 2001-05-16 洲磊科技股份有限公司 发光半导体装置及其制作方法
US6492661B1 (en) * 1999-11-04 2002-12-10 Fen-Ren Chien Light emitting semiconductor device having reflection layer structure

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JPS57149781A (en) * 1981-03-11 1982-09-16 Fujitsu Ltd Semiconductor luminous device
JPS58140171A (ja) * 1982-02-15 1983-08-19 Nec Corp 発光ダイオ−ド
JPH0697498A (ja) * 1992-09-17 1994-04-08 Toshiba Corp 半導体発光素子
JPH07254731A (ja) * 1994-03-15 1995-10-03 Hitachi Cable Ltd 発光素子
JPH07273368A (ja) * 1994-03-29 1995-10-20 Nec Kansai Ltd 発光ダイオード
JP3511213B2 (ja) * 1994-03-30 2004-03-29 スタンレー電気株式会社 光半導体デバイス
JPH08335717A (ja) * 1995-06-06 1996-12-17 Rohm Co Ltd 半導体発光素子
JP3595097B2 (ja) * 1996-02-26 2004-12-02 株式会社東芝 半導体装置
JP3156756B2 (ja) * 1997-01-10 2001-04-16 サンケン電気株式会社 半導体発光素子
JP3893874B2 (ja) * 1999-12-21 2007-03-14 日亜化学工業株式会社 窒化物半導体発光素子の製造方法
JP4310998B2 (ja) * 2002-11-18 2009-08-12 パナソニック電工株式会社 半導体発光素子
JP4159865B2 (ja) * 2002-12-11 2008-10-01 シャープ株式会社 窒化物系化合物半導体発光素子の製造方法
KR100452751B1 (ko) * 2003-06-03 2004-10-15 삼성전기주식회사 그물망 전극이 적용된 ⅲ-질화물 반도체 발광소자
JP2005116794A (ja) * 2003-10-08 2005-04-28 Mitsubishi Cable Ind Ltd 窒化物半導体発光素子
JP2005123526A (ja) * 2003-10-20 2005-05-12 Oki Data Corp 半導体装置、ｌｅｄヘッド、及び画像形成装置
KR20050051920A (ko) * 2003-11-28 2005-06-02 삼성전자주식회사 플립칩형 질화물계 발광소자 및 그 제조방법
CN1641893A (zh) * 2004-01-02 2005-07-20 炬鑫科技股份有限公司 一种氮化镓系发光二极管结构及其制造方法
JP2005277372A (ja) * 2004-02-25 2005-10-06 Sanken Electric Co Ltd 半導体発光素子及びその製造方法

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05243612A (ja) * 1992-03-03 1993-09-21 Sharp Corp 発光ダイオード及びその製造方法
JPH09237916A (ja) * 1996-02-29 1997-09-09 Sharp Corp 発光ダイオード及びその製造方法
US6492661B1 (en) * 1999-11-04 2002-12-10 Fen-Ren Chien Light emitting semiconductor device having reflection layer structure
CN1295350A (zh) * 1999-11-05 2001-05-16 洲磊科技股份有限公司 发光半导体装置及其制作方法

Also Published As

Publication number Publication date
WO2007036164A8 (fr) 2007-07-19
EP1929545A1 (fr) 2008-06-11
WO2007036164A1 (fr) 2007-04-05
EP1929545A4 (fr) 2014-03-05
CN1770486A (zh) 2006-05-10
KR20080049724A (ko) 2008-06-04
JP2009510730A (ja) 2009-03-12

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C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
ASS Succession or assignment of patent right

Owner name: JINGNENG PHOTOELECTRIC( JIANGXI ) CO., LTD.

Free format text: FORMER OWNER: NANCHANG UNIV.

Effective date: 20060804

C41 Transfer of patent application or patent right or utility model
TA01 Transfer of patent application right

Effective date of registration: 20060804

Address after: 330047 No. 235 East Nanjing Road, Jiangxi, Nanchang

Applicant after: Lattice Power (JiangXi) Corp.

Address before: 330047 material research institute, Nanchang University, 235 East Nanjing Road, Nanchang, Jiangxi

Applicant before: Nanchang University

C14 Grant of patent or utility model
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Denomination of invention: Semiconductor light emitting device and method of fabricating the same

Effective date of registration: 20100511

Granted publication date: 20080514

Pledgee: Agricultural Bank of China Limited by Share Ltd. Nanchang hi tech sub branch

Pledgor: LATTICE POWER (JIANGXI) Corp.

Registration number: 2010990000752

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Date of cancellation: 20131107

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Pledgee: Agricultural Bank of China Limited by Share Ltd. Nanchang hi tech sub branch

Pledgor: LATTICE POWER (JIANGXI) Corp.

Registration number: 2010990000752

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PE01 Entry into force of the registration of the contract for pledge of patent right

Denomination of invention: Semiconductor light emitting device and method of fabricating the same

Effective date of registration: 20150320

Granted publication date: 20080514

Pledgee: Export Import Bank of China

Pledgor: LATTICE POWER (JIANGXI) Corp.

Registration number: 2015990000219

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Address after: 330047 No. 235 East Nanjing Road, Jiangxi, Nanchang

Patentee after: Jingneng optoelectronics Co.,Ltd.

Address before: 330047 No. 235 East Nanjing Road, Jiangxi, Nanchang

Patentee before: LATTICE POWER (JIANGXI) Corp.