CH620049A5 - Method for producing an integrated circuit and integrated circuit produced in accordance with the method - Google Patents
Method for producing an integrated circuit and integrated circuit produced in accordance with the method Download PDFInfo
- Publication number
- CH620049A5 CH620049A5 CH730976A CH730976A CH620049A5 CH 620049 A5 CH620049 A5 CH 620049A5 CH 730976 A CH730976 A CH 730976A CH 730976 A CH730976 A CH 730976A CH 620049 A5 CH620049 A5 CH 620049A5
- Authority
- CH
- Switzerland
- Prior art keywords
- frame
- conductivity type
- zone
- base body
- integrated circuit
- Prior art date
Links
- 238000000034 method Methods 0.000 title claims description 31
- 238000004519 manufacturing process Methods 0.000 title claims description 12
- 239000004020 conductor Substances 0.000 claims description 29
- 230000005669 field effect Effects 0.000 claims description 12
- 230000002093 peripheral effect Effects 0.000 claims description 8
- 239000004065 semiconductor Substances 0.000 claims description 8
- 239000011248 coating agent Substances 0.000 claims description 7
- 238000000576 coating method Methods 0.000 claims description 7
- 238000009792 diffusion process Methods 0.000 claims description 7
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical group [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims description 6
- 239000000463 material Substances 0.000 claims description 6
- 239000011810 insulating material Substances 0.000 claims description 5
- 238000000926 separation method Methods 0.000 claims description 5
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 4
- 229910052698 phosphorus Inorganic materials 0.000 claims description 3
- 239000011574 phosphorus Substances 0.000 claims description 3
- 125000004429 atom Chemical group 0.000 claims 9
- 230000000873 masking effect Effects 0.000 claims 5
- 230000015572 biosynthetic process Effects 0.000 claims 2
- 230000001427 coherent effect Effects 0.000 claims 2
- 150000002500 ions Chemical class 0.000 claims 1
- 125000004437 phosphorous atom Chemical group 0.000 claims 1
- 230000001681 protective effect Effects 0.000 description 18
- 229920002120 photoresistant polymer Polymers 0.000 description 10
- 239000000758 substrate Substances 0.000 description 8
- 238000005516 engineering process Methods 0.000 description 6
- 229910052796 boron Inorganic materials 0.000 description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 230000005540 biological transmission Effects 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- 238000001556 precipitation Methods 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 230000000295 complement effect Effects 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 238000012856 packing Methods 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 235000012239 silicon dioxide Nutrition 0.000 description 2
- 239000002904 solvent Substances 0.000 description 2
- 241000238558 Eucarida Species 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- -1 buffered HF Chemical compound 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 229910021419 crystalline silicon Inorganic materials 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000013067 intermediate product Substances 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- XUIMIQQOPSSXEZ-NJFSPNSNSA-N silicon-30 atom Chemical compound [30Si] XUIMIQQOPSSXEZ-NJFSPNSNSA-N 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
- H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
- H10D84/83—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
- H10D84/85—Complementary IGFETs, e.g. CMOS
- H10D84/858—Complementary IGFETs, e.g. CMOS comprising a P-type well but not an N-type well
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D99/00—Subject matter not provided for in other groups of this subclass
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Electrodes Of Semiconductors (AREA)
- Bipolar Transistors (AREA)
- Element Separation (AREA)
- Semiconductor Memories (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US58587475A | 1975-06-11 | 1975-06-11 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CH620049A5 true CH620049A5 (en) | 1980-10-31 |
Family
ID=24343323
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CH730976A CH620049A5 (en) | 1975-06-11 | 1976-06-09 | Method for producing an integrated circuit and integrated circuit produced in accordance with the method |
Country Status (15)
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4081896A (en) * | 1977-04-11 | 1978-04-04 | Rca Corporation | Method of making a substrate contact for an integrated circuit |
| CA1188821A (en) * | 1982-09-03 | 1985-06-11 | Patrick W. Clarke | Power mosfet integrated circuit |
| US4860080A (en) * | 1987-03-31 | 1989-08-22 | General Electric Company | Isolation for transistor devices having a pilot structure |
| JPH02168666A (ja) * | 1988-09-29 | 1990-06-28 | Mitsubishi Electric Corp | 相補型半導体装置とその製造方法 |
Family Cites Families (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| NL6904543A (enrdf_load_stackoverflow) * | 1969-03-25 | 1970-09-29 | ||
| US3660735A (en) * | 1969-09-10 | 1972-05-02 | Sprague Electric Co | Complementary metal insulator silicon transistor pairs |
| US3608189A (en) * | 1970-01-07 | 1971-09-28 | Gen Electric | Method of making complementary field-effect transistors by single step diffusion |
| US3868721A (en) * | 1970-11-02 | 1975-02-25 | Motorola Inc | Diffusion guarded metal-oxide-silicon field effect transistors |
| FR2129827B1 (enrdf_load_stackoverflow) * | 1971-03-15 | 1976-09-03 | Gen Electric | |
| US3712995A (en) * | 1972-03-27 | 1973-01-23 | Rca Corp | Input transient protection for complementary insulated gate field effect transistor integrated circuit device |
| JPS5535869B2 (enrdf_load_stackoverflow) * | 1972-05-15 | 1980-09-17 | ||
| JPS4921080A (enrdf_load_stackoverflow) * | 1972-06-15 | 1974-02-25 |
-
1976
- 1976-04-19 IN IN664/CAL/1976A patent/IN144541B/en unknown
- 1976-05-14 IT IT23310/76A patent/IT1079501B/it active
- 1976-05-27 CA CA253,457A patent/CA1057413A/en not_active Expired
- 1976-06-03 GB GB22962/76A patent/GB1526503A/en not_active Expired
- 1976-06-04 SE SE7606368A patent/SE416599B/xx unknown
- 1976-06-05 DE DE19762625576 patent/DE2625576A1/de not_active Withdrawn
- 1976-06-07 AU AU14675/76A patent/AU497683B2/en not_active Expired
- 1976-06-07 BR BR7603615A patent/BR7603615A/pt unknown
- 1976-06-07 YU YU01393/76A patent/YU139376A/xx unknown
- 1976-06-09 CH CH730976A patent/CH620049A5/de not_active IP Right Cessation
- 1976-06-09 BE BE7000833A patent/BE842774A/xx unknown
- 1976-06-10 NL NL7606272A patent/NL7606272A/xx not_active Application Discontinuation
- 1976-06-10 HU HU76RA647A patent/HU175524B/hu unknown
- 1976-06-10 FR FR7617582A patent/FR2314583A1/fr active Granted
- 1976-06-10 JP JP51068632A patent/JPS5234677A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| FR2314583B1 (enrdf_load_stackoverflow) | 1982-09-17 |
| HU175524B (hu) | 1980-08-28 |
| JPS574105B2 (enrdf_load_stackoverflow) | 1982-01-25 |
| AU1467576A (en) | 1977-12-15 |
| BR7603615A (pt) | 1977-02-01 |
| CA1057413A (en) | 1979-06-26 |
| NL7606272A (nl) | 1976-12-14 |
| IN144541B (enrdf_load_stackoverflow) | 1978-05-13 |
| SE7606368L (sv) | 1976-12-12 |
| BE842774A (nl) | 1976-10-01 |
| AU497683B2 (en) | 1978-12-21 |
| DE2625576A1 (de) | 1976-12-30 |
| YU139376A (en) | 1983-04-27 |
| IT1079501B (it) | 1985-05-13 |
| SE416599B (sv) | 1981-01-19 |
| JPS5234677A (en) | 1977-03-16 |
| GB1526503A (en) | 1978-09-27 |
| FR2314583A1 (fr) | 1977-01-07 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PL | Patent ceased | ||
| PL | Patent ceased |