SE7606368L - Integrerad kretsanordning - Google Patents
Integrerad kretsanordningInfo
- Publication number
- SE7606368L SE7606368L SE7606368A SE7606368A SE7606368L SE 7606368 L SE7606368 L SE 7606368L SE 7606368 A SE7606368 A SE 7606368A SE 7606368 A SE7606368 A SE 7606368A SE 7606368 L SE7606368 L SE 7606368L
- Authority
- SE
- Sweden
- Prior art keywords
- gate
- transistors
- integrated circuit
- surrounded
- frame
- Prior art date
Links
- 230000000295 complement effect Effects 0.000 abstract 1
- 239000004020 conductor Substances 0.000 abstract 1
- 238000009792 diffusion process Methods 0.000 abstract 1
- 238000002955 isolation Methods 0.000 abstract 1
- 238000004519 manufacturing process Methods 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
- 238000012856 packing Methods 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
- H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
- H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
- H01L27/092—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate complementary MIS field-effect transistors
- H01L27/0927—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate complementary MIS field-effect transistors comprising a P-well only in the substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Electrodes Of Semiconductors (AREA)
- Bipolar Transistors (AREA)
- Element Separation (AREA)
- Semiconductor Memories (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US58587475A | 1975-06-11 | 1975-06-11 |
Publications (2)
Publication Number | Publication Date |
---|---|
SE7606368L true SE7606368L (sv) | 1976-12-12 |
SE416599B SE416599B (sv) | 1981-01-19 |
Family
ID=24343323
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SE7606368A SE416599B (sv) | 1975-06-11 | 1976-06-04 | Integrerad kretsanordning och sett for dess tillverkning |
Country Status (15)
Country | Link |
---|---|
JP (1) | JPS5234677A (sv) |
AU (1) | AU497683B2 (sv) |
BE (1) | BE842774A (sv) |
BR (1) | BR7603615A (sv) |
CA (1) | CA1057413A (sv) |
CH (1) | CH620049A5 (sv) |
DE (1) | DE2625576A1 (sv) |
FR (1) | FR2314583A1 (sv) |
GB (1) | GB1526503A (sv) |
HU (1) | HU175524B (sv) |
IN (1) | IN144541B (sv) |
IT (1) | IT1079501B (sv) |
NL (1) | NL7606272A (sv) |
SE (1) | SE416599B (sv) |
YU (1) | YU139376A (sv) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4081896A (en) * | 1977-04-11 | 1978-04-04 | Rca Corporation | Method of making a substrate contact for an integrated circuit |
CA1188821A (en) * | 1982-09-03 | 1985-06-11 | Patrick W. Clarke | Power mosfet integrated circuit |
US4860080A (en) * | 1987-03-31 | 1989-08-22 | General Electric Company | Isolation for transistor devices having a pilot structure |
JPH02168666A (ja) * | 1988-09-29 | 1990-06-28 | Mitsubishi Electric Corp | 相補型半導体装置とその製造方法 |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
NL6904543A (sv) * | 1969-03-25 | 1970-09-29 | ||
US3660735A (en) * | 1969-09-10 | 1972-05-02 | Sprague Electric Co | Complementary metal insulator silicon transistor pairs |
US3608189A (en) * | 1970-01-07 | 1971-09-28 | Gen Electric | Method of making complementary field-effect transistors by single step diffusion |
US3868721A (en) * | 1970-11-02 | 1975-02-25 | Motorola Inc | Diffusion guarded metal-oxide-silicon field effect transistors |
FR2129827B1 (sv) * | 1971-03-15 | 1976-09-03 | Gen Electric | |
US3712995A (en) * | 1972-03-27 | 1973-01-23 | Rca Corp | Input transient protection for complementary insulated gate field effect transistor integrated circuit device |
JPS5535869B2 (sv) * | 1972-05-15 | 1980-09-17 | ||
JPS4921080A (sv) * | 1972-06-15 | 1974-02-25 |
-
1976
- 1976-04-19 IN IN664/CAL/1976A patent/IN144541B/en unknown
- 1976-05-14 IT IT23310/76A patent/IT1079501B/it active
- 1976-05-27 CA CA253,457A patent/CA1057413A/en not_active Expired
- 1976-06-03 GB GB22962/76A patent/GB1526503A/en not_active Expired
- 1976-06-04 SE SE7606368A patent/SE416599B/sv unknown
- 1976-06-05 DE DE19762625576 patent/DE2625576A1/de not_active Withdrawn
- 1976-06-07 YU YU01393/76A patent/YU139376A/xx unknown
- 1976-06-07 BR BR7603615A patent/BR7603615A/pt unknown
- 1976-06-07 AU AU14675/76A patent/AU497683B2/en not_active Expired
- 1976-06-09 CH CH730976A patent/CH620049A5/de not_active IP Right Cessation
- 1976-06-09 BE BE7000833A patent/BE842774A/xx unknown
- 1976-06-10 HU HU76RA647A patent/HU175524B/hu unknown
- 1976-06-10 JP JP51068632A patent/JPS5234677A/ja active Granted
- 1976-06-10 NL NL7606272A patent/NL7606272A/xx not_active Application Discontinuation
- 1976-06-10 FR FR7617582A patent/FR2314583A1/fr active Granted
Also Published As
Publication number | Publication date |
---|---|
FR2314583B1 (sv) | 1982-09-17 |
AU1467576A (en) | 1977-12-15 |
GB1526503A (en) | 1978-09-27 |
BE842774A (nl) | 1976-10-01 |
SE416599B (sv) | 1981-01-19 |
BR7603615A (pt) | 1977-02-01 |
FR2314583A1 (fr) | 1977-01-07 |
HU175524B (hu) | 1980-08-28 |
CA1057413A (en) | 1979-06-26 |
JPS574105B2 (sv) | 1982-01-25 |
NL7606272A (nl) | 1976-12-14 |
JPS5234677A (en) | 1977-03-16 |
YU139376A (en) | 1983-04-27 |
DE2625576A1 (de) | 1976-12-30 |
AU497683B2 (en) | 1978-12-21 |
CH620049A5 (en) | 1980-10-31 |
IT1079501B (it) | 1985-05-13 |
IN144541B (sv) | 1978-05-13 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
ES419843A1 (es) | Un procedimiento mejorado para fabricar transistores. | |
JPS5286083A (en) | Production of complimentary isolation gate field effect transistor | |
KR870003579A (ko) | 집적회로 소자상의 드레인형성공정 및 그 공정으로 제조된 집적회로 소자 | |
HK35681A (en) | Semiconductor integrated circuit device composed of insulated gate field-effect transistors | |
DE69226909D1 (de) | Logik-Schaltung mit vertikal gestapelten Heteroübergangsfeldeffekttransistoren | |
SE7606368L (sv) | Integrerad kretsanordning | |
JPS5223277A (en) | Method of manufacteuring insulating gate type field effect transistor | |
JPS5683075A (en) | Insulating gate type field-effect transistor circuit device | |
JPS5412573A (en) | Junction type field effect transistor and production of the same | |
GB2012480A (en) | Heterostructure field effect transistors | |
JPS51111042A (en) | Gate circuit | |
JPS5263074A (en) | Insulated gate type field effect transistor and its production | |
JPS5215274A (en) | Semiconductor device | |
DE2860611D1 (en) | Process for the generation of windows having stepped edges within material layers of insulating material or of material for electrodes for the production of an integrated semiconductor circuit and mis field-effect transistor with short channel length produced by this process | |
JPS55121666A (en) | Mos transistor circuit | |
JPS5624623A (en) | Transistor device | |
JPS5240981A (en) | Insulation gate type field effect transistor circuit | |
FR2423868A1 (fr) | Extensions de drains pour dispositifs logiques cos/mos fermes | |
JPS5282078A (en) | Production of mos transistor | |
JPS5249777A (en) | Process for production of field effect transistor | |
JPS51127683A (en) | Manufacturing process of insulation gate-type electric field transisto r | |
JPS5455180A (en) | Semiconductor circuit device | |
JPS6461942A (en) | Complementary metal-oxide semiconductor device | |
JPS5323555A (en) | Complemen tary mos integrated circuit | |
JPS5422780A (en) | Complementary misic |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
NAL | Patent in force |
Ref document number: 7606368-4 Format of ref document f/p: F |